TWI420572B - 摻雜奈米粒子半導體電荷傳送層 - Google Patents

摻雜奈米粒子半導體電荷傳送層 Download PDF

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Publication number
TWI420572B
TWI420572B TW097103096A TW97103096A TWI420572B TW I420572 B TWI420572 B TW I420572B TW 097103096 A TW097103096 A TW 097103096A TW 97103096 A TW97103096 A TW 97103096A TW I420572 B TWI420572 B TW I420572B
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TW
Taiwan
Prior art keywords
doped semiconductor
transport layer
semiconductor
nanoparticles
situ doped
Prior art date
Application number
TW097103096A
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English (en)
Chinese (zh)
Other versions
TW200849335A (en
Inventor
卡漢 凱司Ｂ
Original Assignee
柯達公司
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Filing date
Publication date
Application filed by 柯達公司 filed Critical 柯達公司
Publication of TW200849335A publication Critical patent/TW200849335A/zh
Application granted granted Critical
Publication of TWI420572B publication Critical patent/TWI420572B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition

Landscapes

  • Luminescent Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW097103096A 2007-01-29 2008-01-28 摻雜奈米粒子半導體電荷傳送層 TWI420572B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/668,041 US7494903B2 (en) 2007-01-29 2007-01-29 Doped nanoparticle semiconductor charge transport layer

Publications (2)

Publication Number Publication Date
TW200849335A TW200849335A (en) 2008-12-16
TWI420572B true TWI420572B (zh) 2013-12-21

Family

ID=39668467

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097103096A TWI420572B (zh) 2007-01-29 2008-01-28 摻雜奈米粒子半導體電荷傳送層

Country Status (5)

Country Link
US (1) US7494903B2 (enExample)
EP (1) EP2126965A2 (enExample)
JP (1) JP2010517291A (enExample)
TW (1) TWI420572B (enExample)
WO (1) WO2008130396A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804238B2 (en) * 2004-08-31 2010-09-28 Nissan Motor Co., Ltd. Functional thin-film element, producing method thereof, and article using functional thin-film element
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
CN101622319B (zh) 2007-01-03 2013-05-08 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8575911B2 (en) * 2010-06-28 2013-11-05 Virginia Tech Intellectual Properties, Inc. Digital hybrid V2 control for buck converters
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
TW201405828A (zh) 2012-07-31 2014-02-01 E Ink Holdings Inc 顯示面板、薄膜電晶體及其製造方法
JP7254696B2 (ja) * 2017-03-21 2023-04-10 富士フイルム株式会社 半導体粒子、分散物、フィルム、光学フィルタ、建築用部材、及び、放射冷却装置

Citations (3)

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Publication number Priority date Publication date Assignee Title
TW200604266A (en) * 2004-03-17 2006-02-01 Du Pont Organic formulations of polythiophenes and polypyrrole polymers made with polymeric acid colloids for electronics applications
US20060040103A1 (en) * 2004-06-08 2006-02-23 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components

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US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
EP1540741B1 (en) 2002-09-05 2014-10-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
DE102004048230A1 (de) * 2004-10-04 2006-04-06 Institut für Neue Materialien Gemeinnützige GmbH Verfahren zur Herstellung von Nanopartikeln mit maßgeschneiderter Oberflächenchemie und entsprechenden Kolloiden
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060237719A1 (en) * 2002-10-30 2006-10-26 Hewlett-Packard Development Company, L.P. Electronic components
TW200604266A (en) * 2004-03-17 2006-02-01 Du Pont Organic formulations of polythiophenes and polypyrrole polymers made with polymeric acid colloids for electronics applications
US20060040103A1 (en) * 2004-06-08 2006-02-23 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

Also Published As

Publication number Publication date
US7494903B2 (en) 2009-02-24
EP2126965A2 (en) 2009-12-02
US20080182391A1 (en) 2008-07-31
JP2010517291A (ja) 2010-05-20
TW200849335A (en) 2008-12-16
WO2008130396A2 (en) 2008-10-30
WO2008130396A3 (en) 2009-04-09

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