JP2010512004A5 - - Google Patents

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Publication number
JP2010512004A5
JP2010512004A5 JP2009539352A JP2009539352A JP2010512004A5 JP 2010512004 A5 JP2010512004 A5 JP 2010512004A5 JP 2009539352 A JP2009539352 A JP 2009539352A JP 2009539352 A JP2009539352 A JP 2009539352A JP 2010512004 A5 JP2010512004 A5 JP 2010512004A5
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JP
Japan
Prior art keywords
type material
conductive type
doped region
transfer gate
work function
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JP2009539352A
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English (en)
Japanese (ja)
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JP5096483B2 (ja
JP2010512004A (ja
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Priority claimed from US11/565,801 external-priority patent/US7675097B2/en
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Publication of JP2010512004A5 publication Critical patent/JP2010512004A5/ja
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Publication of JP5096483B2 publication Critical patent/JP5096483B2/ja
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JP2009539352A 2006-12-01 2007-11-30 撮像素子トランスファゲートデバイスにおけるシリサイドストラップ Active JP5096483B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/565,801 US7675097B2 (en) 2006-12-01 2006-12-01 Silicide strapping in imager transfer gate device
US11/565,801 2006-12-01
PCT/US2007/024684 WO2008069994A2 (en) 2006-12-01 2007-11-30 Silicide strapping in imager transfer gate device

Publications (3)

Publication Number Publication Date
JP2010512004A JP2010512004A (ja) 2010-04-15
JP2010512004A5 true JP2010512004A5 (OSRAM) 2011-01-20
JP5096483B2 JP5096483B2 (ja) 2012-12-12

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Family Applications (1)

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JP2009539352A Active JP5096483B2 (ja) 2006-12-01 2007-11-30 撮像素子トランスファゲートデバイスにおけるシリサイドストラップ

Country Status (7)

Country Link
US (2) US7675097B2 (OSRAM)
EP (1) EP2089905B1 (OSRAM)
JP (1) JP5096483B2 (OSRAM)
KR (1) KR101437194B1 (OSRAM)
CN (1) CN101281918B (OSRAM)
TW (1) TWI420659B (OSRAM)
WO (1) WO2008069994A2 (OSRAM)

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