JP2010510656A5 - - Google Patents
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- Publication number
- JP2010510656A5 JP2010510656A5 JP2009537188A JP2009537188A JP2010510656A5 JP 2010510656 A5 JP2010510656 A5 JP 2010510656A5 JP 2009537188 A JP2009537188 A JP 2009537188A JP 2009537188 A JP2009537188 A JP 2009537188A JP 2010510656 A5 JP2010510656 A5 JP 2010510656A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- conductors
- forming
- silicide
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 18
- 239000000463 material Substances 0.000 claims 12
- GEIAQOFPUVMAGM-UHFFFAOYSA-N oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 12
- -1 Ta 2 O 5 Inorganic materials 0.000 claims 10
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims 8
- 229910021332 silicide Inorganic materials 0.000 claims 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 6
- 229910017121 AlSiO Inorganic materials 0.000 claims 6
- 229910003855 HfAlO Inorganic materials 0.000 claims 6
- 229910004140 HfO Inorganic materials 0.000 claims 6
- 229910004129 HfSiO Inorganic materials 0.000 claims 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 6
- 229910019899 RuO Inorganic materials 0.000 claims 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims 6
- 229910006501 ZrSiO Inorganic materials 0.000 claims 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 4
- 230000000903 blocking Effects 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/560,289 US8018024B2 (en) | 2003-12-03 | 2006-11-15 | P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
| US11/560,283 US7682920B2 (en) | 2003-12-03 | 2006-11-15 | Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
| PCT/US2007/023855 WO2008060543A2 (en) | 2006-11-15 | 2007-11-13 | P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010510656A JP2010510656A (ja) | 2010-04-02 |
| JP2010510656A5 true JP2010510656A5 (zh) | 2010-10-21 |
Family
ID=42211734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009537188A Pending JP2010510656A (ja) | 2006-11-15 | 2007-11-13 | 誘電性アンチヒューズと直列にシリサイドに隣接して結晶化されたｐ−ｉ−ｎダイオードおよびその形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2010510656A (zh) |
| TW (1) | TWI424535B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5191803B2 (ja) * | 2008-05-29 | 2013-05-08 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
| JP4719910B2 (ja) * | 2008-11-26 | 2011-07-06 | 国立大学法人東北大学 | 半導体装置の製造方法 |
| US9012307B2 (en) * | 2010-07-13 | 2015-04-21 | Crossbar, Inc. | Two terminal resistive switching device structure and method of fabricating |
| US8374018B2 (en) * | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302700A (ja) * | 1993-04-19 | 1994-10-28 | Kawasaki Steel Corp | 半導体装置およびその製造方法 |
| JPH08139197A (ja) * | 1994-11-11 | 1996-05-31 | Tadahiro Omi | シリサイド反応を利用した半導体装置 |
| US6534841B1 (en) * | 2001-12-14 | 2003-03-18 | Hewlett-Packard Company | Continuous antifuse material in memory structure |
| JP2003203864A (ja) * | 2002-01-09 | 2003-07-18 | Sangaku Renkei Kiko Kyushu:Kk | 半導体薄膜の製造方法 |
| US20050158950A1 (en) * | 2002-12-19 | 2005-07-21 | Matrix Semiconductor, Inc. | Non-volatile memory cell comprising a dielectric layer and a phase change material in series |
| JP4360826B2 (ja) * | 2003-04-24 | 2009-11-11 | シャープ株式会社 | 半導体膜およびその製造方法 |
| JP2005347468A (ja) * | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 不揮発性メモリ |
-
2007
- 2007-11-13 JP JP2009537188A patent/JP2010510656A/ja active Pending
- 2007-11-15 TW TW96143253A patent/TWI424535B/zh not_active IP Right Cessation
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