JP2010508636A - 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 - Google Patents
集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 Download PDFInfo
- Publication number
- JP2010508636A JP2010508636A JP2009535187A JP2009535187A JP2010508636A JP 2010508636 A JP2010508636 A JP 2010508636A JP 2009535187 A JP2009535187 A JP 2009535187A JP 2009535187 A JP2009535187 A JP 2009535187A JP 2010508636 A JP2010508636 A JP 2010508636A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- tco
- cobalt
- alloy
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910000531 Co alloy Inorganic materials 0.000 title claims abstract description 36
- 230000008021 deposition Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000243 solution Substances 0.000 claims description 33
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 239000000956 alloy Substances 0.000 claims description 31
- 229910052759 nickel Inorganic materials 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 24
- 206010070834 Sensitisation Diseases 0.000 claims description 20
- 230000008313 sensitization Effects 0.000 claims description 20
- 229910017052 cobalt Inorganic materials 0.000 claims description 18
- 239000010941 cobalt Substances 0.000 claims description 18
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- -1 halide salt Chemical class 0.000 claims description 16
- 239000003792 electrolyte Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 239000003495 polar organic solvent Substances 0.000 claims description 12
- 239000011135 tin Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000012811 non-conductive material Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 239000011888 foil Substances 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000004070 electrodeposition Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000003929 acidic solution Substances 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 239000003637 basic solution Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000005234 chemical deposition Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000012943 hotmelt Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- CMWCOKOTCLFJOP-UHFFFAOYSA-N titanium(3+) Chemical class [Ti+3] CMWCOKOTCLFJOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 229910000691 Re alloy Inorganic materials 0.000 claims description 2
- 229910000929 Ru alloy Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- WGQYCBTWBQPWIC-UHFFFAOYSA-N [Re].[Co].[Ni] Chemical compound [Re].[Co].[Ni] WGQYCBTWBQPWIC-UHFFFAOYSA-N 0.000 claims description 2
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000002848 electrochemical method Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 claims description 2
- DEPMYWCZAIMWCR-UHFFFAOYSA-N nickel ruthenium Chemical compound [Ni].[Ru] DEPMYWCZAIMWCR-UHFFFAOYSA-N 0.000 claims description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 2
- 238000007146 photocatalysis Methods 0.000 claims description 2
- 230000001699 photocatalysis Effects 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 3
- 239000002861 polymer material Substances 0.000 claims 3
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 25
- 238000001652 electrophoretic deposition Methods 0.000 description 17
- 229920000728 polyester Polymers 0.000 description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 229910010413 TiO 2 Inorganic materials 0.000 description 12
- 239000000725 suspension Substances 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 229910052740 iodine Inorganic materials 0.000 description 5
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 5
- 239000011630 iodine Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 239000003973 paint Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000527 sonication Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- LTNAYKNIZNSHQA-UHFFFAOYSA-L 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylic acid;ruthenium(2+);dithiocyanate Chemical compound N#CS[Ru]SC#N.OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1.OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1 LTNAYKNIZNSHQA-UHFFFAOYSA-L 0.000 description 2
- SFPQDYSOPQHZAQ-UHFFFAOYSA-N 2-methoxypropanenitrile Chemical compound COC(C)C#N SFPQDYSOPQHZAQ-UHFFFAOYSA-N 0.000 description 2
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 241000080590 Niso Species 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- GNIUTEUGOKZBEH-UHFFFAOYSA-O [I+].CC=1NC(=[N+](C1)CCC)C Chemical compound [I+].CC=1NC(=[N+](C1)CCC)C GNIUTEUGOKZBEH-UHFFFAOYSA-O 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000011858 nanopowder Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- PEWJJOZYMNJBHZ-UHFFFAOYSA-N 2-pyridin-2-yl-3h-pyridine-4,4-dicarboxylic acid Chemical compound C1=CC(C(=O)O)(C(O)=O)CC(C=2N=CC=CC=2)=N1 PEWJJOZYMNJBHZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229920003313 Bynel® Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229920003182 Surlyn® Polymers 0.000 description 1
- PPWHTZKZQNXVAE-UHFFFAOYSA-N Tetracaine hydrochloride Chemical compound Cl.CCCCNC1=CC=C(C(=O)OCCN(C)C)C=C1 PPWHTZKZQNXVAE-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000001810 isothiocyanato group Chemical group *N=C=S 0.000 description 1
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- 229940111695 potassium tartrate Drugs 0.000 description 1
- 235000011005 potassium tartrates Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Hybrid Cells (AREA)
- Physical Vapour Deposition (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Abstract
Description
FTOガラス上でのニッケル−コバルトワイヤの電気化学的形成及びこれから調製されるDSSC
70mm×40mmのサイズのFTOガラス(8オーム/平方、Hartford Glass Co.Inc.、USA)を、トリクロロエチレン、刺激性の少ない石鹸及びエタノールで十分に清浄にし、水及び蒸留水で洗浄し、濾過した空気流中で乾燥した。次いで、FTOガラスを、化学抵抗性塗料(Enplate Stop−Off No1、Enthone−OMI,Inc.、イスラエルではAmza Surface Finishing Technologiesで代表される)から調製されたマスクで覆い、4つのワイヤに未被覆の面積を残し、各面積は、55mm×0.8mmの寸法を有し、7.7mmの間隙、並びに基体の縁から5mmの距離に長さ30mm及び幅3mmの、基体の1つの短い端に集電体ストライプのための面積を持つ。
ITO/PET導電性プラスチック上でのニッケル−コバルトワイヤの電気化学的形成及びこれから調製されるDSSC
62.5mm×40mmのサイズを持つポリエステル(PET)で被覆された導電性プラスチックインジウム−錫酸化物(ITO)、ITO/PET(55オーム/平方、Bekaert Specialty Films、USA)を、エタノールで十分に清浄にし、水及び蒸留水で洗浄し、濾過した空気流中で乾燥した。次いで、ITO/PETを、化学抵抗性塗料(Enplate Stop−Off No1、Enthone−OMI,Inc.、イスラエルではAmza Surface Finishing Technologiesで代表される)から調製されたマスクで覆い、4つのワイヤを未被覆の面積で残し、各面積は、40mm×1.5mmの寸法を有し、7mmの間隙、並びに基体の縁から5mmの距離に長さ30mm及び幅3mmの、基体の1つの短い端に集電体ストライプのための面積を持つ。
Claims (42)
- 光化学用途での使用のためのニッケル−コバルト合金を含む集電体。
- 前記ニッケル−コバルト合金組成が、ニッケル0.1〜99.9%、コバルト99.9〜0.1%、好ましくは、ニッケル1〜99%、コバルト99〜1%、より好ましくは、ニッケル2〜98%、コバルト98〜2%の範囲にある、請求項1に記載の集電体。
- 非導電性材料で更に保護された、請求項1又は2に記載の集電体。
- 前記非導電性材料が、無機及び/又は有機被膜、ポリマー材料、ホットメルトシール箔、低温溶融ガラスフリット又はセラミック釉薬である、請求項3に記載の集電体。
- 光化学用途での使用のためのニッケル−コバルト合金を含む導電性配線。
- 前記ニッケル−コバルト合金組成が、ニッケル0.1〜99.9%、コバルト99.9〜0.1%、好ましくは、ニッケル1〜99%、コバルト99〜1%、より好ましくは、ニッケル2〜98%、コバルト98〜2%の範囲にある、請求項5に記載の導電性配線。
- 非導電性材料で更に保護された、請求項5又は6に記載の導電性配線。
- 前記非導電性材料が、無機及び/又は有機被膜、ポリマー材料、ホットメルトシール箔、低温溶融ガラスフリット又はセラミック釉薬である、請求項7に記載の導電性配線。
- ニッケル−コバルト合金が堆積されている透明導電性酸化物(TCO)。
- 前記ニッケル−コバルト合金組成が、ニッケル0.1〜99.9%、コバルト99.9〜0.1%、好ましくは、ニッケル1〜99%、コバルト99〜1%、より好ましくは、ニッケル2〜98%、コバルト98〜2%の範囲にある、請求項9に記載のTCO。
- 非導電性材料で更に保護された、請求項9又は10に記載のTCO。
- 前記非導電性材料が、無機及び/又は有機被膜、ポリマー材料、ホットメルトシール箔、低温溶融ガラスフリット又はセラミック釉薬である、請求項11に記載のTCO。
- 前記TCOが、フッ素でドープされた酸化錫(FTO)又は錫でドープされた酸化インジウム(ITO)である、請求項9から12のいずれか一項に記載のTCO。
- 請求項9から13までのいずれか一項に記載の透明導電性酸化物(TCO)で作製された光化学用途のための電極。
- 前記光化学用途が、色素増感太陽電池(DSSC)、浄水又は光触媒作用である、請求項14に記載の電極。
- 集電体が堆積されている透明導電性酸化物(TCO)電極を含み、前記集電体がニッケル−コバルト合金を含む、色素増感太陽電池(DSSC)。
- 前記ニッケル−コバルト合金組成が、ニッケル0.1〜99.9%、コバルト99.9〜0.1%、好ましくは、ニッケル1〜99%、コバルト99〜1%、より好ましくは、ニッケル2〜98%、コバルト98〜2%の範囲にある、請求項16に記載のDSSC。
- 非導電性材料で更に保護された、請求項16又は17に記載のDSSC。
- 前記非導電性材料が、無機及び/又は有機被膜、ポリマー材料、ホットメルトシール箔、低温溶融ガラスフリット又はセラミック釉薬である、請求項18に記載のDSSC。
- 集電体が堆積されている透明導電性酸化物(TCO)電極を含む色素増感太陽電池(DSSC)における、前記集電体がニッケル−コバルト合金を含む改良。
- それぞれ請求項16から19のいずれか一項に記載の少なくとも2つの色素増感太陽電池(DSSC)を含み、前記少なくとも2つのDSSCの各2つが導電性配線で接続され、前記導電性配線がニッケル−コバルト合金を含むアレイ。
- 少なくとも2つの色素増感太陽電池(DSSC)を含むアレイであって、アレイの各DSSCが、集電体が堆積されている透明導電性酸化物(TCO)電極を含み、前記少なくとも2つのDSSCの各2つが導電性配線で接続されているアレイにおける、前記集電体及び前記導電性配線がそれぞれニッケル−コバルト合金を含む改良。
- 透明導電性酸化物(TCO)表面上への堆積金属又は合金の良好な接着を伴う、TCO表面上への金属又は合金の電気化学的又は化学的堆積方法であって、
(a)TCO表面の上層の還元、
(b)還元されたTCO表面への金属イオンの接着の改良のための、還元されたTCO表面の増感、及び
(c)前記増感還元されたTCO表面上への前記金属又は合金の電気化学的又は無電解堆積
を含む、上記方法。 - 前記TCOが、フッ素でドープされた酸化錫(FTO)又は錫でドープされた酸化インジウム(ITO)である、請求項23に記載の方法。
- 前記金属又は合金が、Ni、Cu、Co、Fe、Pd、Pt、Sn、ニッケル−コバルト合金、ニッケル−鉄合金、ニッケル−クロム−鉄合金、ニッケル−パラジウム合金、ニッケル−タングステン合金、ニッケル−錫合金、ニッケル−モリブデン合金、ニッケル−コバルト−レニウム合金、ニッケル−ルテニウム合金又はコバルト−タングステン合金から選択される、請求項23又は24に記載の方法。
- 前記合金がニッケル−コバルト合金である、請求項25に記載の方法。
- 前記ニッケル−コバルト合金組成が、ニッケル0.1〜99.9%、コバルト99.9〜0.1%、好ましくは、ニッケル1〜99%、コバルト99〜1%、より好ましくは、ニッケル2〜98%、コバルト98〜2%の範囲にある、請求項26に記載の方法。
- 前記還元工程(a)及び前記増感工程(b)が一工程に組み合わされる、請求項23に記載の方法。
- 工程(a)におけるTCO表面の還元が、還元プラズマ、化学的方法、又は電気化学的方法、好ましくは電気化学的還元で実施される、請求項23に記載の方法。
- 前記電気化学的還元が、電気化学電池で実施され、(i)前記TCOが陰極極性に接続され、(ii)陽極が不活性の不溶性導電性材料で作製され、(iii)電解質が純水或いは水及び/又は極性有機溶媒中の少なくとも1つのハロゲン化物塩の希釈溶液である、請求項29に記載の方法。
- 前記陽極が、黒鉛、白金、TCO又は白金で被覆されたチタンで作製される、請求項30に記載の方法。
- 前記電解質が、極性有機溶媒を補充した水又は水を補充した極性有機溶媒中の少なくとも1つのハロゲン化物塩の希釈溶液である、請求項30に記載の方法。
- 前記極性有機溶媒が、C1〜C6アルカノール、好ましくはエタノールである、請求項30又は32に記載の方法。
- 前記電解質が純水であり、高電圧が使用される、請求項30に記載の方法。
- 工程(b)における前記TCO表面の増感が、水又は極性有機溶媒中の錫(II)又はチタン(III)塩の溶液中で実施される、請求項23に記載の方法。
- 前記増感工程(b)の前の還元工程(a)で得られる還元金属のエッチングを更に含む、請求項23に記載の方法。
- 前記還元金属のエッチングが、酸性若しくは塩基性溶液中、又は錯化剤と一緒の酸化剤の溶液中で実施される、請求項36に記載の方法。
- 工程(b)における前記TCO表面の増感が、前記TCO表面上の前記還元金属のエッチングに付随して実施される、請求項23に記載の方法。
- 前記還元金属のエッチングに付随する前記TCO表面の増感が、水又は極性有機溶媒中の錫(II)又はチタン(III)塩の酸性溶液又は塩基性溶液から選択される溶液中で実施される、請求項38に記載の方法。
- 前記TCOがFTOであり、前記還元金属がSnである、請求項35又は37に記載の方法。
- 前記還元金属のエッチングに付随する前記TCO表面の増感が、水又は極性有機溶媒中の錫(II)塩の酸性溶液又は塩基性溶液中で実施され、それによって前記錫(II)イオンがTCO表面上に吸着し、その後の水での洗浄中に加水分解し、加水分解生成物がTCO表面上に吸着し、このようにして、次工程の電気化学的又は無電解堆積(c)で前記表面への前記金属イオンの接着が改良される、請求項38に記載の方法。
- 透明導電性酸化物(TCO)表面上への堆積金属又は合金の良好な接着を伴う、TCO表面上への金属又は合金の電気化学的又は化学的堆積方法であって、
(a)TCO表面の上層の還元、及び
(b)前記還元されたTCO表面上への前記金属又は合金の電気化学的又は無電解堆積
を含む、上記方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85575306P | 2006-11-01 | 2006-11-01 | |
PCT/IL2007/001298 WO2008053464A2 (en) | 2006-11-01 | 2007-10-25 | Nickel-cobalt alloys as current collectors and conductive interconnects and deposition thereof on transparent conductive oxides |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013162419A Division JP2014031583A (ja) | 2006-11-01 | 2013-08-05 | 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010508636A true JP2010508636A (ja) | 2010-03-18 |
JP2010508636A5 JP2010508636A5 (ja) | 2010-12-16 |
Family
ID=39344687
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009535187A Pending JP2010508636A (ja) | 2006-11-01 | 2007-10-25 | 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 |
JP2013162419A Pending JP2014031583A (ja) | 2006-11-01 | 2013-08-05 | 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013162419A Pending JP2014031583A (ja) | 2006-11-01 | 2013-08-05 | 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9064985B2 (ja) |
EP (1) | EP2092573A2 (ja) |
JP (2) | JP2010508636A (ja) |
WO (1) | WO2008053464A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013503966A (ja) * | 2009-09-02 | 2013-02-04 | バンガー ユニバーシティ | 色素増感太陽電池用の低温プラチナイズ(platinisation) |
WO2013073211A1 (ja) * | 2011-11-18 | 2013-05-23 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101032925B1 (ko) * | 2009-03-13 | 2011-05-06 | 주식회사 티지에너지 | 염료감응 태양전지 제조방법 및 제조장치 |
GB201007669D0 (en) | 2010-05-07 | 2010-06-23 | Epigem Ltd | Composite electrode for molecular electronic devices and method of manufacture thereof |
WO2012118028A1 (ja) * | 2011-03-02 | 2012-09-07 | 株式会社フジクラ | 色素増感太陽電池モジュール |
GB201103810D0 (en) * | 2011-03-04 | 2011-04-20 | G24 Innovations Ltd | Photovoltaic cell |
US20130125968A1 (en) * | 2011-11-18 | 2013-05-23 | Sunpreme, Ltd. | Low-cost solar cell metallization over tco and methods of their fabrication |
US9783901B2 (en) | 2014-03-11 | 2017-10-10 | Macdermid Acumen, Inc. | Electroplating of metals on conductive oxide substrates |
US9428836B2 (en) * | 2014-04-29 | 2016-08-30 | Lam Research Corporation | Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents |
JP6616637B2 (ja) * | 2015-09-18 | 2019-12-04 | 石原ケミカル株式会社 | 透明導電膜上への導電性皮膜形成方法 |
AU2017223229B2 (en) * | 2016-02-25 | 2022-10-13 | Newsouth Innovations Pty Limited | A method and an apparatus for treating a surface of a TCO material in a semiconductor device |
US10184189B2 (en) | 2016-07-18 | 2019-01-22 | ECSI Fibrotools, Inc. | Apparatus and method of contact electroplating of isolated structures |
DE102017121228A1 (de) | 2017-09-13 | 2019-03-14 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Oberflächenbehandlung einer Probe die mindestens eine Oberfläche eines Metalloxids aufweist und Metalloxid mit behandelter Oberfläche |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003061018A1 (en) * | 2002-01-10 | 2003-07-24 | Tdk Corporation | Photovoltaic device |
WO2003081609A1 (en) * | 2002-03-26 | 2003-10-02 | Fujikura Ltd. | Conductive glass and photoelectric conversion device using same |
JP2005332782A (ja) * | 2004-05-21 | 2005-12-02 | Ngk Spark Plug Co Ltd | 色素増感型光電変換素子及び色素増感型太陽電池 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2407579A (en) * | 1942-07-04 | 1946-09-10 | Du Pont | Electrodeposition of tin |
US3607352A (en) * | 1968-11-29 | 1971-09-21 | Enthone | Electroless metal plating |
US4387116A (en) * | 1981-12-28 | 1983-06-07 | Exxon Research And Engineering Co. | Conditioner for adherence of nickel to a tin oxide surface |
JPS60141874A (ja) * | 1983-12-28 | 1985-07-26 | Seiko Epson Corp | 無電解メツキ方法 |
JPS60245782A (ja) | 1984-05-21 | 1985-12-05 | Mitsubishi Electric Corp | 透明導電膜パタ−ン上へのめつき方法 |
DE3536821A1 (de) | 1985-10-16 | 1987-04-16 | Standard Elektrik Lorenz Ag | Verfahren zur herstellung einer stromlos abgeschiedenen, loetbaren metallschicht |
JPH0697070A (ja) * | 1992-09-11 | 1994-04-08 | Sanyo Electric Co Ltd | 多結晶シリコン膜の製造方法 |
JPH0765650A (ja) | 1993-08-31 | 1995-03-10 | Kyocera Corp | 透明導電膜上の金属電極層およびその製造方法 |
JP3821868B2 (ja) | 1994-08-23 | 2006-09-13 | ローム・アンド・ハース電子材料株式会社 | 絶縁基材上にめっきする方法及びその方法にて得られるめっき付与物 |
US5474621A (en) * | 1994-09-19 | 1995-12-12 | Energy Conversion Devices, Inc. | Current collection system for photovoltaic cells |
US6306544B1 (en) * | 1999-02-25 | 2001-10-23 | Wilson Greatbatch Ltd. | Cobalt-based alloys as positive electrode current collectors in nonaqueous electrochemical cells |
AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
US6670213B2 (en) * | 2001-10-10 | 2003-12-30 | Cambridge Display Technology Limited | Method of preparing photoresponsive devices, and devices made thereby |
IL153895A (en) * | 2003-01-12 | 2013-01-31 | Orion Solar Systems Ltd | Solar cell device |
DE10324880B4 (de) | 2003-05-30 | 2007-04-05 | Schott Ag | Verfahren zur Herstellung von OLEDs |
US7052587B2 (en) | 2003-06-27 | 2006-05-30 | General Motors Corporation | Photoelectrochemical device and electrode |
JP4438541B2 (ja) * | 2004-04-19 | 2010-03-24 | 三井金属鉱業株式会社 | 非水電解液二次電池の負極集電体用の複合箔及びその製造方法、並びに該複合箔を用いた負極集電体、非水電解液二次電池用電極及び非水電解液二次電池 |
AU2006274547A1 (en) | 2005-08-04 | 2007-02-08 | Orion Solar Photovoltaics Ltd | Method for preparation of stable solutions of inorganic-organic polymers |
AU2006274548A1 (en) | 2005-08-04 | 2007-02-08 | 3Gsolar Ltd | Method for production of nanoporous electrodes for photoelectrochemical applications |
KR20070056581A (ko) * | 2005-11-30 | 2007-06-04 | 삼성전자주식회사 | 태양전지용 전극, 그의 제조방법 및 그를 포함하는태양전지 |
-
2007
- 2007-10-25 JP JP2009535187A patent/JP2010508636A/ja active Pending
- 2007-10-25 WO PCT/IL2007/001298 patent/WO2008053464A2/en active Application Filing
- 2007-10-25 US US12/513,222 patent/US9064985B2/en active Active
- 2007-10-25 EP EP07827272A patent/EP2092573A2/en not_active Withdrawn
-
2013
- 2013-08-05 JP JP2013162419A patent/JP2014031583A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003061018A1 (en) * | 2002-01-10 | 2003-07-24 | Tdk Corporation | Photovoltaic device |
WO2003081609A1 (en) * | 2002-03-26 | 2003-10-02 | Fujikura Ltd. | Conductive glass and photoelectric conversion device using same |
JP2005332782A (ja) * | 2004-05-21 | 2005-12-02 | Ngk Spark Plug Co Ltd | 色素増感型光電変換素子及び色素増感型太陽電池 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013503966A (ja) * | 2009-09-02 | 2013-02-04 | バンガー ユニバーシティ | 色素増感太陽電池用の低温プラチナイズ(platinisation) |
WO2013073211A1 (ja) * | 2011-11-18 | 2013-05-23 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
JPWO2013073211A1 (ja) * | 2011-11-18 | 2015-04-02 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9064985B2 (en) | 2015-06-23 |
WO2008053464A2 (en) | 2008-05-08 |
JP2014031583A (ja) | 2014-02-20 |
US20100065101A1 (en) | 2010-03-18 |
WO2008053464A3 (en) | 2009-08-27 |
EP2092573A2 (en) | 2009-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9064985B2 (en) | Nickel-cobalt alloys as current collectors and conductive interconnects and deposition thereof on transparent conductive oxides | |
Balasingam et al. | Metal substrate based electrodes for flexible dye-sensitized solar cells: fabrication methods, progress and challenges | |
Lin et al. | Cathodic electrodeposition of highly porous cobalt sulfide counter electrodes for dye-sensitized solar cells | |
Lin et al. | Honeycomb-like CoS counter electrodes for transparent dye-sensitized solar cells | |
JP4071719B2 (ja) | 導電性ガラスおよびこれを用いた光電変換素子 | |
JP4446011B2 (ja) | 色素増感型太陽電池用光電極の製造方法および色素増感型太陽電池用光電極、並びに色素増感型太陽電池 | |
JP5150818B2 (ja) | 色素増感太陽電池およびその製造方法 | |
Sedghi et al. | Influence of TiO2 electrode properties on performance of dye-sensitized solar cells | |
Wu et al. | Electrochemical formation of transparent nanostructured TiO 2 film as an effective bifunctional layer for dye-sensitized solar cells | |
JP2014031583A5 (ja) | ||
JP2010508636A5 (ja) | ||
JP4203554B2 (ja) | 光電変換素子及びその製造方法 | |
JP2008251518A (ja) | 色素増感型太陽電池用光電極の製造方法および色素増感型太陽電池用光電極、並びに色素増感型太陽電池 | |
Congiu et al. | Single precursor route to efficient cobalt sulphide counter electrodes for dye sensitized solar cells | |
Qian et al. | Anatase TiO2 sols derived from peroxotitanium acid and to form transparent TiO2 compact film for dye-sensitized solar cells | |
Huang et al. | Solution-based synthesis of ultrasmall Nb2O5 nanoparticles for functional thin films in dye-sensitized and perovskite solar cells | |
JP4578786B2 (ja) | 色素増感太陽電池の製造方法 | |
Fan et al. | Low-cost, quasi-solid-state and TCO-free highly bendable dye-sensitized cells on paper substrate | |
US20120181573A1 (en) | Transparent conductive oxides having a nanostructured surface and uses thereof | |
KR101726127B1 (ko) | 블록 공중합체를 이용한 염료감응 태양전지용 상대전극 및 이를 포함하는 염료감응 태양전지 | |
US20100300537A1 (en) | Dye-sensitized solar cell and organic solvent-free electrolyte for dye-sensitized solar cell | |
Dao et al. | Transition metal oxides as Pt‐free counter electrodes for liquid‐junction photovoltaic devices | |
Behrouznejad et al. | Monolithic dye sensitized solar cell with metal foil counter electrode | |
Wu et al. | Anodic deposition of ultrathin TiO2 film with blocking layer and anchoring layer for dye-sensitized solar cells | |
JP4954855B2 (ja) | 色素増感太陽電池の製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101022 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101022 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130208 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130508 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130515 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130610 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130617 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130708 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130716 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131018 |