JP2010505238A - イオンビームの輸送を改善する技術 - Google Patents
イオンビームの輸送を改善する技術 Download PDFInfo
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- 238000005516 engineering process Methods 0.000 title abstract description 4
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- 238000005468 ion implantation Methods 0.000 claims abstract description 42
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/028—Particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
- H01J2237/04756—Changing particle velocity decelerating with electrostatic means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
- H01J2237/1825—Evacuating means
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
【解決手段】 一実施形態例において、当該技術は、イオンビームを生成するイオン源と、イオンビームが含むイオン粒子から所望のイオン種を選択する質量分析器と、イオンビームが含むイオンのエネルギーを低減するイオン減速器と、イオンビームが含むイオンを注入する少なくとも1つの加工対象物を支持するエンドステーションと、イオンビームがイオン減速器に到達する前に、イオンビームから中性に荷電されている粒子を除去する中性粒子分離部とを備えるイオン注入システムとして実現されるとしてもよい。
【選択図】図2
Description
」注入装置と呼ばれる。半導体産業では、イオン注入エネルギーが1keV未満であり、入射角の制御が1度未満で行われるイオン注入が主流になりつつある。
Claims (18)
- イオンビームを生成するイオン源と、
前記イオンビームが含むイオン粒子から所望のイオン種を選択する質量分析器と、
前記イオンビームが含むイオンのエネルギーを低減するイオン減速器と、
前記イオンビームが含むイオンを注入する少なくとも1つの加工対象物を支持するエンドステーションと、
前記イオンビームが前記イオン減速器に到達する前に、前記イオンビームから電荷が中和された粒子を除去する中性粒子分離部と
を備えるイオン注入システム。 - 前記イオンビームが前記少なくとも1つの加工対象物に入射する前に、前記所望のイオン種のイオンを偏向して、前記イオンビームを帯状イオンビームに変換する角度補正磁石
をさらに備える、請求項1に記載のイオン注入システム。 - 前記中性粒子分離部は、エネルギーフィルタを有する
請求項1に記載のイオン注入システム。 - 前記エネルギーフィルタは、静電偏向子を含む
請求項3に記載のイオン注入システム。 - 前記イオン減速器は、多段光学イオン減速器を有する
請求項1に記載のイオン注入システム。 - 前記中性粒子分離部は、注入中において前記少なくとも1つの加工対象物の表面において発生するガスをトラップするガストラップ機構を有する
請求項1に記載のイオン注入システム。 - 前記ガストラップ機構は、前記中性粒子分離部の一部分を冷却する冷却機構を含む
請求項6に記載のイオン注入システム。 - 前記ガストラップ機構は、前記冷却される一部分における冷却された粒子の凝結によってバックグラウンドガスをトラップする
請求項7に記載のイオン注入システム。 - 前記中性粒子分離部は、前記少なくとも1つの加工対象物から離れるように中性粒子を偏向する1以上の面を有する
請求項1に記載のイオン注入システム。 - 前記イオン減速器の後に配置される多極補正部
をさらに備える、請求項1に記載のイオン注入システム。 - 注入システムにおいてイオンを注入する方法であって、
イオン源でイオンビームを生成する段階と、
前記イオンビームに対して質量分析を実行して特定のイオン種を選択する段階と、
前記イオンビームをフィルタリングして中性粒子を除去する段階と、
前記イオンビームを所望のエネルギーレベルまで減速する段階と、
前記イオンビームを帯状ビームに変換する段階と、
前記帯状ビームを基板に印加する段階と
を備える方法。 - 前記イオンビームをフィルタリングして中性粒子を除去する段階は、前記イオンビームが静電偏向子を通過するように制御する段階を含む
請求項11に記載の方法。 - 前記静電偏向子は、バックグラウンドガスを冷却して凝結させることに基づいて、バックグラウンド圧力を低減する
請求項12に記載の方法。 - 前記静電偏向子は、所望のイオンのみを偏向する
請求項12に記載の方法。 - 前記静電偏向子は、所望されない粒子を、前記基板から離れるように偏向する
請求項12に記載の方法。 - イオン注入システムにおいて帯状イオンビームから所望されない粒子を除去する方法であって、
イオン注入システムにおいてイオンビームを減速する前に、静電偏向子で高エネルギーイオンビームをフィルタリングして、中性ガス粒子を除去する段階
を備える方法。 - 前記静電偏向子の周囲のバックグラウンド圧力を低減する段階
をさらに備える、請求項16に記載の方法。 - 前記バックグラウンド圧力を低減する段階は、前記静電偏向子の少なくとも一部を低温冷却して、凝結によりバックグラウンドガスの分子をトラップする段階を含む
請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/529,508 US7619228B2 (en) | 2006-09-29 | 2006-09-29 | Technique for improved ion beam transport |
US11/529,508 | 2006-09-29 | ||
PCT/US2007/079539 WO2008042664A2 (en) | 2006-09-29 | 2007-09-26 | Technique for improved ion beam transport |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010505238A true JP2010505238A (ja) | 2010-02-18 |
JP5320644B2 JP5320644B2 (ja) | 2013-10-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530573A Active JP5320644B2 (ja) | 2006-09-29 | 2007-09-26 | イオン注入システム、イオンを注入する方法、および、イオンビームから所望されない粒子を除去する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7619228B2 (ja) |
JP (1) | JP5320644B2 (ja) |
KR (1) | KR101346592B1 (ja) |
CN (1) | CN101563750B (ja) |
TW (1) | TWI430320B (ja) |
WO (1) | WO2008042664A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015002048A (ja) * | 2013-06-14 | 2015-01-05 | 株式会社Sen | 高エネルギーイオン注入装置 |
JP2019519552A (ja) * | 2016-06-13 | 2019-07-11 | 寰 牛 | イオン注入による医療用組成物の製造 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7528391B2 (en) * | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
GB2446005B (en) * | 2007-01-23 | 2012-03-21 | Superion Ltd | Apparatus and method relating to removal of selected particles from a charged particle beam |
US7858955B2 (en) * | 2008-06-25 | 2010-12-28 | Axcelis Technologies, Inc. | System and method of controlling broad beam uniformity |
CN101838797B (zh) * | 2009-12-18 | 2012-07-04 | 上海凯世通半导体有限公司 | 离子注入方法 |
RU2579749C2 (ru) * | 2010-08-23 | 2016-04-10 | Эксодженезис Корпорейшн | Способ и устройство обработки нейтральным пучком, основанные на технологии пучка газовых кластерных ионов |
US20120060353A1 (en) * | 2010-09-14 | 2012-03-15 | Varian Semiconductor Equipment Associates, Inc. | Mechanism and method for ensuring alignment of a workpiece to a mask |
CN102655072A (zh) * | 2011-03-01 | 2012-09-05 | 上海凯世通半导体有限公司 | 离子注入设备 |
CN102800550B (zh) * | 2011-05-27 | 2015-08-26 | 日新离子机器株式会社 | 离子注入装置 |
JP5800286B2 (ja) * | 2012-03-09 | 2015-10-28 | 日新イオン機器株式会社 | イオン注入装置 |
JP6500009B2 (ja) * | 2013-03-15 | 2019-04-10 | グレン レイン ファミリー リミテッド ライアビリティ リミテッド パートナーシップ | 調節可能な質量分析アパーチャ |
JP6076834B2 (ja) * | 2013-05-28 | 2017-02-08 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置 |
US8835879B1 (en) * | 2013-06-03 | 2014-09-16 | Varian Semiconductor Equipment Associates, Inc. | Reduction of deposition by separation of ion beam and neutral flow |
CN103327725B (zh) * | 2013-07-12 | 2016-05-04 | 武汉当代核技术有限公司 | 一种pet/spect/bnct三用小型医用回旋加速器 |
JP6207418B2 (ja) * | 2014-02-10 | 2017-10-04 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法 |
US9988711B2 (en) * | 2015-05-14 | 2018-06-05 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for multilayer deposition |
CN105005070B (zh) * | 2015-06-05 | 2018-02-13 | 北京大学 | 一种加速器分析磁铁后疑似离子束的甄别方法及其装置 |
US9721750B2 (en) * | 2015-07-28 | 2017-08-01 | Varian Semiconductor Equipment Associates, Inc. | Controlling contamination particle trajectory from a beam-line electrostatic element |
US10147584B2 (en) | 2017-03-20 | 2018-12-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for decelerated ion beam with no energy contamination |
CN110556281B (zh) * | 2018-06-01 | 2024-01-23 | 日新离子机器株式会社 | 离子束照射装置 |
CN109686644A (zh) * | 2018-12-07 | 2019-04-26 | 德淮半导体有限公司 | 离子植入机及其工作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02260357A (ja) * | 1989-03-31 | 1990-10-23 | Ulvac Corp | 平行走査用イオン注入装置 |
JPH0320951A (ja) * | 1989-06-17 | 1991-01-29 | Ulvac Corp | イオン注入装置 |
JPH04253149A (ja) * | 1990-08-29 | 1992-09-08 | Nissin Electric Co Ltd | 二次元磁気走査を用いたイオン照射装置および関連装置 |
JP2003288857A (ja) * | 2002-03-27 | 2003-10-10 | Sumitomo Eaton Noba Kk | イオンビームの電荷中和装置とその方法 |
WO2004112078A2 (en) * | 2003-06-10 | 2004-12-23 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter having enhanced low energy ion beam transport |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276477A (en) * | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
US4283631A (en) * | 1980-02-22 | 1981-08-11 | Varian Associates, Inc. | Bean scanning and method of use for ion implantation |
US4587432A (en) * | 1984-08-03 | 1986-05-06 | Applied Materials, Inc. | Apparatus for ion implantation |
US4922106A (en) * | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
US5177366A (en) * | 1992-03-06 | 1993-01-05 | Eaton Corporation | Ion beam implanter for providing cross plane focusing |
US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
EP0846190A1 (en) * | 1995-06-13 | 1998-06-10 | Massively Parallel Instruments, Inc. | Improved parallel ion optics and apparatus for high current low energy ion beams |
US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
JPH11260309A (ja) * | 1998-03-13 | 1999-09-24 | Hitachi Ltd | イオン注入装置 |
DE69916241T2 (de) | 1998-09-24 | 2005-04-14 | Koninklijke Philips Electronics N.V. | Ionenimplantierungsvorrichtung gestaltet zur ausfilterung von neutralen ionen aus dem ionenstrahl und methode |
US6441382B1 (en) * | 1999-05-21 | 2002-08-27 | Axcelis Technologies, Inc. | Deceleration electrode configuration for ultra-low energy ion implanter |
US6998625B1 (en) * | 1999-06-23 | 2006-02-14 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter having two-stage deceleration beamline |
JP3727047B2 (ja) * | 1999-07-30 | 2005-12-14 | 住友イートンノバ株式会社 | イオン注入装置 |
US6635880B1 (en) * | 1999-10-05 | 2003-10-21 | Varian Semiconductor Equipment Associates, Inc. | High transmission, low energy beamline architecture for ion implanter |
US6946667B2 (en) * | 2000-03-01 | 2005-09-20 | Advanced Ion Beam Technology, Inc. | Apparatus to decelerate and control ion beams to improve the total quality of ion implantation |
US6489622B1 (en) * | 2000-03-01 | 2002-12-03 | Advanced Ion Beam Technology, Inc. | Apparatus for decelerating ion beams with minimal energy contamination |
US6285133B1 (en) * | 2000-06-14 | 2001-09-04 | Advanced Micro Devices, Inc. | Ion implanter with multi-level vacuum |
WO2002052609A2 (en) | 2000-12-27 | 2002-07-04 | Proteros, Llc | Compact beamline and ion implanter system using same |
JP3738734B2 (ja) * | 2002-02-06 | 2006-01-25 | 日新電機株式会社 | 静電加速管およびそれを備えるイオン注入装置 |
US6933507B2 (en) * | 2002-07-17 | 2005-08-23 | Kenneth H. Purser | Controlling the characteristics of implanter ion-beams |
US6777696B1 (en) * | 2003-02-21 | 2004-08-17 | Axcelis Technologies, Inc. | Deflecting acceleration/deceleration gap |
US7112809B2 (en) * | 2003-06-26 | 2006-09-26 | Axcelis Technologies, Inc. | Electrostatic lens for ion beams |
JP4133883B2 (ja) | 2003-12-04 | 2008-08-13 | 日新イオン機器株式会社 | イオンビーム装置 |
US7462843B2 (en) * | 2004-05-18 | 2008-12-09 | Advanced Ion Bean Technology Inc. | Apparatus and methods for ion beam implantation |
US7102146B2 (en) * | 2004-06-03 | 2006-09-05 | Axcelis Technologies, Inc. | Dose cup located near bend in final energy filter of serial implanter for closed loop dose control |
US7022984B1 (en) * | 2005-01-31 | 2006-04-04 | Axcelis Technologies, Inc. | Biased electrostatic deflector |
-
2006
- 2006-09-29 US US11/529,508 patent/US7619228B2/en active Active
-
2007
- 2007-08-29 TW TW096131998A patent/TWI430320B/zh active
- 2007-09-26 CN CN200780043233.8A patent/CN101563750B/zh active Active
- 2007-09-26 JP JP2009530573A patent/JP5320644B2/ja active Active
- 2007-09-26 WO PCT/US2007/079539 patent/WO2008042664A2/en active Application Filing
- 2007-09-26 KR KR1020097008298A patent/KR101346592B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02260357A (ja) * | 1989-03-31 | 1990-10-23 | Ulvac Corp | 平行走査用イオン注入装置 |
JPH0320951A (ja) * | 1989-06-17 | 1991-01-29 | Ulvac Corp | イオン注入装置 |
JPH04253149A (ja) * | 1990-08-29 | 1992-09-08 | Nissin Electric Co Ltd | 二次元磁気走査を用いたイオン照射装置および関連装置 |
JP2003288857A (ja) * | 2002-03-27 | 2003-10-10 | Sumitomo Eaton Noba Kk | イオンビームの電荷中和装置とその方法 |
WO2004112078A2 (en) * | 2003-06-10 | 2004-12-23 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter having enhanced low energy ion beam transport |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015002048A (ja) * | 2013-06-14 | 2015-01-05 | 株式会社Sen | 高エネルギーイオン注入装置 |
JP2019519552A (ja) * | 2016-06-13 | 2019-07-11 | 寰 牛 | イオン注入による医療用組成物の製造 |
Also Published As
Publication number | Publication date |
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US7619228B2 (en) | 2009-11-17 |
CN101563750A (zh) | 2009-10-21 |
KR101346592B1 (ko) | 2014-01-02 |
KR20090074780A (ko) | 2009-07-07 |
TWI430320B (zh) | 2014-03-11 |
US20080078949A1 (en) | 2008-04-03 |
TW200820303A (en) | 2008-05-01 |
JP5320644B2 (ja) | 2013-10-23 |
WO2008042664A3 (en) | 2008-07-03 |
WO2008042664A2 (en) | 2008-04-10 |
CN101563750B (zh) | 2014-08-06 |
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