JP2010267738A - Electronic component and electronic component manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the soldering and mounting quality of an electronic component and a circuit board. <P>SOLUTION: The electronic component 1 has a package formed by joining a base 3 made of glass and a lid 2 together. In a cavity part 13, a crystal vibrator 6 is supported by a support part 5 and sealed. The crystal vibrator 6 has an electrode formed thereon, and the electrode conducts to a bottom surface part of the base 3 by through electrodes 7, 17 formed in through-holes penetrating the base 3. External electrodes 8, 18 are formed on a bottom surface of the base 3 and are electrically connect with the through electrodes 7, 17, respectively. The external electrodes 8, 18 each has a structure formed stacking three CrAu layers of a Cr layer (first layer) to an Au layer (sixth layer). When the external electrodes 8, 18 are soldered to the circuit board, the second, fourth and sixth Au layers are diffused in the solder, and the third and the fifth Cr layers which form no intermetallic compound with the solder are desorbed in the solder. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electronic component and an electronic component manufacturing method, and relates to an apparatus for improving soldering and mounting quality with a circuit board.

For example, some electronic elements such as a crystal resonator and a semiconductor are provided in a package.
External electrodes are formed in these packages, and the electronic elements are electrically and physically connected to the circuit board together with the packages by soldering the external electrodes.

FIG. 4 is a diagram for explaining a conventional external electrode 8.
The external electrode 8 has a three-layer structure made of, for example, Cr, Ni, and Au.
The Cr layer is formed on the bottom surface of the base 3 because it has good adhesion to the glass constituting the base 3 of the package.
An Ni layer for forming an intermetallic compound with Sn, which is the main component of solder, is formed on the upper surface of the Cr layer, and an Au layer for preventing Ni oxidation is further formed on the upper surface. Yes.

When the external electrode 8 configured in this way is soldered to the circuit board, the Au layer diffuses into the solder, and the Ni on which the Au layer has been formed constitutes the Sn and intermetallic compound layer, The Ni layer and the Cr layer that did not form the intermetallic compound with Sn are bonded to the circuit board via the intermetallic compound layer and the solder.
Techniques using Cr when the base material is glass are proposed in Patent Documents 1 and 2 below.

Patent Document 1 proposes a technique for forming an external electrode on glass with two thin layers of Cr and Au, or Cr and Ni alloy-Au.
Patent Document 2 proposes a technique for forming an external electrode with two thin layers of Cr and Ni alloy-Au.
In addition, when the base material is not glass, there are known those in which Ni is used as a base and Au for preventing oxidation is covered on the surface layer, and Cu is used as a base and Sn is formed thereon.

By the way, when heated by solder bonding, Sn and Cu or Ni in the solder (or in the electrode film) form an intermetallic compound layer, but since the intermetallic compound layer is more fragile than the base material, external force is reduced. When added, there was a problem that cracks were likely to occur.
In addition, when the temperature is increased, when the intermetallic compound layer grows and the Ni or Cu layer completely reacts, the strength is reduced, so that a certain thickness is required.
If the thickness of Ni or Cu is large (particularly in the case of glass), the stress of the film itself increases during formation (plating), and the substrate bending resistance may be insufficient. For example, the strength of the two-layer structure of Cr and Au described in Patent Document 1 is low.

Special Table 2007-528591 JP 2006-197278 A

  An object of this invention is to improve the soldering mounting quality of an electronic component and a circuit board.

In order to achieve the above object, according to the present invention, in the invention according to claim 1, an electronic element, a storage container for storing the electronic element in a hollow portion formed therein, and the electronic element electrically A container electrode formed from the inside to the outside of the storage container, and an external electrode electrically connected to the container electrode and formed on the bottom surface of the storage container, The external electrode is formed on the bottom surface of the storage container, and is formed on the first metal layer bonded to the solder, the second metal layer formed on the surface of the first metal layer and dissolved in the solder, and the first There is provided an electronic component characterized in that it is formed using a third metal layer formed on the surface of the second metal layer and not dissolved in solder.
According to a second aspect of the present invention, in the external electrode, a fourth metal layer formed on the surface of the third metal layer and dissolved in the solder, and formed on the surface of the fourth metal layer. The electronic component according to claim 1, wherein a fifth metal layer that does not dissolve in the first metal layer is formed.
According to a third aspect of the present invention, there is provided the electronic component according to the first or second aspect, wherein an antioxidant film is formed as the outermost surface layer.
According to a fourth aspect of the present invention, there is provided the electronic component according to the first, second, or third aspect, wherein the storage container is formed using glass.
According to a fifth aspect of the present invention, there is provided the electronic component according to any one of the first to fourth aspects, wherein the electronic component is a crystal resonator.
According to the sixth aspect of the present invention, an electronic element installation step of installing an electronic element and a container electrode for wiring electrically connected to the electronic element on the base, and the electronic element and the container electrode are installed. Forming a first metal layer to be bonded to solder on the bottom surface of the storage container; and a sealing step of sealing the electronic element in a storage container including the base and the lid by bonding a lid to the base. An external electrode is formed by forming a second metal layer that dissolves in solder on the surface of the first metal layer and forming a third metal layer that does not dissolve in solder on the surface of the second metal layer. An electronic component manufacturing method configured using an electrode forming step.

  By providing a metal layer that does not dissolve in the solder on the metal layer that dissolves in the solder of the external electrode, it is possible to improve the soldering and mounting quality with the circuit board.

It is the figure which showed sectional drawing etc. of an electronic component. It is the figure which showed sectional drawing etc. of the electronic component at the time of joining to a circuit board. It is a figure for demonstrating an experimental result. It is a figure for demonstrating a prior art example.

(1) Outline of Embodiment In the electronic component 1 (FIG. 1), a package having a hollow portion 13 is formed by joining a base 3 made of glass and a lid 2 having a recess. The lid 2 is made of glass or metal.
In the hollow portion 13, the crystal resonator 6 is cantilevered and supported by the support portion 5. An electrode is formed on the crystal resonator 6, and the electrode is electrically connected to the bottom surface (bottom) of the base 3 by through electrodes 7 and 17 formed in through holes penetrating the base 3.

External electrodes 8 and 18 are formed on the bottom surface of the base 3, and the external electrodes 8 and 18 are connected to the through electrodes 7 and 17, respectively.
The external electrodes 8 and 18 have a structure in which three CrAu layers are stacked from the Cr layer (first layer) to the Au layer (sixth layer).

When the external electrodes 8 and 18 are soldered to the circuit board, the second, fourth, and sixth Au layers diffuse into the solder, and the third and fifth Cr layers that do not form an intermetallic compound with the solder are present in the solder. Leave and spread.
The external electrodes 8 and 18 after soldering can realize high shear strength and bending resistance.
This is presumed to be an effect due to the Cr layer becoming finely mixed or contained in the solder.

(2) Details of Embodiment FIG. 1A shows an electronic component 1 according to this embodiment. When the electronic component 1 is bonded to a circuit board, the electronic component 1 is placed in a direction parallel to the surface of the circuit board. It is sectional drawing at the time of seeing.
However, in order to make the drawing easy to understand, the diameters of the through electrodes 7 and 17 are drawn larger in FIG. 1B than in FIG.
Hereinafter, the side facing the circuit board of the electronic component 1 at the time of mounting is referred to as a bottom surface side, and the side facing this is referred to as a top surface side.

The electronic component 1 includes a base 3, a lid 2, a support portion 5, a crystal resonator 6, internal electrodes 4 and 16, through electrodes 7 and 17, external electrodes 8 and 18, and the like.
The crystal resonator 6 is an electronic element constituted by, for example, a tuning fork type crystal resonator, and a tuning fork type base is held by the support portion 5.
Although not shown, an electrode is provided on the tuning fork arm of the crystal resonator 6, and the crystal resonator 6 can be oscillated at a predetermined frequency by supplying a predetermined pulse to the electrode.

The support unit 5 holds the crystal resonator 6 in a cantilever manner with respect to the base 3 so that the tuning fork arm of the crystal resonator 6 can vibrate in the cavity 13.
In this embodiment, the crystal resonator 6 is used as an example of an electronic element, but other electronic elements such as a semiconductor may be used.

The base 3 is a plate-like member made of, for example, glass, and a crystal resonator 6 held by the support portion 5 is attached to the upper surface.
As a material of the base 3, for example, soda glass having any advantage that is inexpensive and capable of anodic bonding is used, and the thickness is, for example, 0.05 to 2 [mm], preferably 0.1 to 0.5. It is about [mm].
In addition to soda glass, borosilicate glass, alkali-free glass, crystallized glass (sometimes tempered) may be used.

Internal electrodes 4 and 16 that are electrically connected to the electrodes of the crystal resonator 6 are formed on the upper surface of the base 3.
The base 3 has a through hole penetrating from the upper surface portion to the bottom surface portion, and through electrodes 7 and 17 are formed in the through hole.
The internal electrode 4 and the through electrode 7 and the internal electrode 16 and the through electrode 17 are electrically connected to each other.

The lid (lid) 2 is formed of glass, metal, or the like, and a central portion of the surface facing the base 3 is removed to form a recess for housing the crystal resonator 6. In the case of a metal lid, it is desirable that the linear expansion coefficient is close to that of glass.
The amount of recess in the recess of the lid 2 is, for example, about 0.05 to 1.5 [mm], and can be processed by etching, sandblasting, hot pressing, laser, or the like.

The opening of the lid 2 is bonded to the base 3 using anodic bonding or a bonding material, and a cavity 13 for accommodating the crystal resonator 6 is formed by the upper surface of the base 3 and the concave portion of the lid 2.
In addition to anodic bonding, the base 3 and the lid 2 may be joined by direct bonding, metal bonding, low melting glass, brazing material, welding, high melting point soldering, or the like.
Further, an intermediate material may be used between the base 3 and the lid 2.

The cavity 13 is hermetically sealed by the lid 2 and the base 3 and shielded from the outside air. For example, the cavity 13 is hermetically sealed such that a vacuum is maintained or a predetermined gas is sealed.
In the electronic component 1, the recess 2 is provided in the lid 2 to form the cavity 13. However, the cavity 3 may be formed by providing the recess in the base 3 and joining the flat lid 2. The recess 2 may be formed on both the lid 2 and the base 3.

As described above, in the electronic component 1, the package by the glass case accommodates the electronic element by the base 3 and the lid 2.
When the package is made of glass, the material cost is low, and the crystal resonator 6 can be trimmed, bonded, and gettered by a laser from the outside on the lower surface side of the electronic component 1.
Here, gettering means that Al and surrounding air (oxygen) are reacted and consumed by irradiating and heating an Al pattern or the like placed in the space when vacuum sealing is performed. This is a technique for improving the degree of vacuum.

  The external electrode 8 is a joining portion composed of a thin film for electrically and mechanically joining the electrode land on the circuit board with solder or the like, and penetrates by forming a metal film on the bottom surface of the base 3 The electrode 7 is electrically connected.

In the electronic component 1, the electrodes of the crystal unit 6 are electrically connected to the external electrodes 8 and 18 through the through electrodes 7 and 17. For example, the internal electrodes 4 and 16 connect the joint between the lid 2 and the base 3. The drawn electronic components 1 and 16 are extended from the side surface to the bottom surface of the base 3, and the internal electrodes 4 and 16 are connected to the external electrodes 8 on the bottom surface of the base 3. , 18 can also be configured to be electrically connected.
In this case, it is not necessary to form the through electrodes 7 and 17 in the base 3.

FIG. 1C is a diagram showing the configuration of the external electrode 8 in detail.
The external electrode 8 is made of a first layer made of Cr formed on the surface of the base 3, a second layer made of Au formed on the surface of the first layer, and made of Cr formed on the surface of the second layer. A third layer, a fourth layer made of Au formed on the surface of the third layer, a fifth layer made of Cr formed on the surface of the fourth layer, and an Au formed on the surface of the fifth layer It is comprised from the 6th layer.

That is, three CrAu layers having an Au layer formed on the surface of the Cr layer are formed, and the first CrAu layer, the second CrAu layer, and the third CrAu layer are formed from the side close to the base 3.
The first Cr layer constituting the uppermost layer has a function as an adhesion layer with the glass of the base 3, and the sixth Au layer constituting the outermost surface layer is used for preventing oxidation. It has a function as a protective film.
In the electronic component 1, as an example, the CrAu layer is repeated three times and three layers are stacked, but this may be repeated two or more times, and there may be two or more layers.

Since Cr has good adhesion to glass, a Cr layer is formed as the first layer on the surface of the base 3.
Cr has a property of not forming an intermetallic compound with solder (Sn is a main component), and Au generates an intermetallic compound (alloy) such as AuSn2 or AuSn4 when soldering, and in the solder It is easy to diffuse.

Thus, Cr does not form an intermetallic compound with solder and does not dissolve in solder, and Au dissolves in solder to form an intermetallic compound with solder.
As described above, the external electrode 8 does not form an intermetallic compound with solder and forms a metal element layer that does not dissolve in solder, and forms an intermetallic compound with solder and forms a metal element layer that easily dissolves in solder. Are alternately stacked.
The second, fourth, and sixth layers only need to be easily dissolved in the solder, and it is not always necessary to form an intermetallic compound with the solder.

Thus, in the external electrode 8, Cr is used as a metal element that does not form a compound with solder, but in addition to this, Ti can be used, and W, Ta, etc. can also be used. .
In addition, Au is used as a metal element that easily diffuses into the solder, but in addition to this, Ag, Pd, or the like can also be used.
For example, the first layer is Cr, the second layer is Au, the third layer is Ti, the fourth layer is Ag, the fifth layer is W, and the sixth layer is Au. It is also possible to form 8.

Each of these layers constituting the external electrode 8 can be formed, for example, by forming a film (thin film) of these metal elements on the bottom surface of the base 3 by sputtering using sputtering.
That is, a first layer of Cr thin film is formed on the bottom surface of the base 3 by sputtering, and then a second layer of Au thin film is formed by sputtering on the Cr thin film surface, and this is repeated twice thereafter. Thus, the external electrode 8 is formed.
In addition, when the thickness of each layer is a certain level or more, it is also possible to form these layers by plating.
The external electrode 8 has been described above, but the configuration of the external electrode 18 is the same.

The electronic component 1 having the above configuration can be manufactured as follows.
A through hole is formed in the base 3, and the through electrodes 7 and 17 are formed in the through hole.
Then, the crystal resonator 6 is installed on the base 3 and connected to the through electrodes 7 and 17, and then the lid 2 is bonded to the base 3 by anodic bonding or the like to form a package.
Next, the external electrode 8 and the external electrode 18 are formed on the bottom surface of the base 3 by plating or the like by sputtering, and the electronic component 1 is completed.

It is also possible to change the process order, such as forming the external electrodes 8 and 18 on the base 3 and then bonding the lid 2 to the base 3.
Further, a wafer on which a large number of electronic components 1 are formed is formed by installing through electrodes 7 and 17 and a crystal resonator 6 on a base wafer on which a large number of bases 3 can be obtained, and bonding a lid wafer on which a large number of lids 2 can be obtained. After forming the external electrodes 8, 18, the external electrodes 8, 18 can be cut to take a large number of electronic components 1.

FIG. 2A is a cross-sectional view of the electronic component 1 joined to the circuit board 31 with solder.
As shown in the figure, the external electrode 8 is electrically and physically bonded to the substrate wiring 32 on the circuit board 31 via the solder 33, and the external electrode 18 is connected to the circuit board 31 via the solder 34. Thus, the electronic component 1 is electrically and physically joined to the circuit board 31.

FIG. 2B is a diagram showing details of the joint surface of the external electrode 8 with the solder.
Since the first Cr layer does not form an intermetallic compound with the solder, it is bonded to the solder 33 in a state of being bonded to the base 3.
The second, fourth, and sixth Au layers have diffused into the solder 33.
Since the third and fifth Cr layers do not form an intermetallic compound with the solder, when the second and fourth Au layers diffuse, the third and fifth Cr layers are separated from the external electrode 8 and exist in any place of the solder 33. .

FIG. 3A is a table showing the experimental results showing the relationship between the lamination of the CrAu layer and the shear strength of the external electrode 8.
The shear test method was based on JIS Z 3198-7, and the shear rate was 5 [mm / m].
The electrode specifications were such that the thickness of the Cr layer was 600 [Å] and the thickness of the Au layer was 1500 [Å].
As shown in the table, when the shear strength when only one CrAu layer is formed is 1.0, it is 1.9 for two layers and 2.1 for three layers. These values were obtained by averaging 10 times for each layer.
FIG. 3B is a graph of this.

Thus, by making the CrAu layer into 2 to 3 layers, it is possible to realize a shear strength about twice that of one layer.
When the number of layers was further increased, it was found that the shear strength seems to be highest in 2 to 4 layers, preferably 3 layers.

FIG. 3 (c) shows a table showing experimental results showing the bending resistance of the substrate.
The bending test method conforms to JEITA ET-7409 / 104, uses a glass epoxy circuit board with a thickness of 1.6 [mm], and determines the presence or absence of an external crack with an indentation amount of 1, 2, and 3 [mm]. Was done.
The electrode specifications were three layers of CrAu layers with a Cr layer thickness of 0.06 [μm] (600 [Å]) and an Au layer thickness of 0.15 [μm] (1500 [Å]). External electrode 8, first comparison electrode with Cr layer thickness of 0.06 [μm], Cu layer thickness of 10.5 [μm], Sn layer thickness of 10 [μm], and Cr The second thickness is 0.06 [μm], the thickness of the Cu layer is 0.5 [μm], the thickness of the Ni layer is 2 [μm], and the thickness of the Sn layer is 10 [μm]. This is a comparative electrode.

When these electrodes are formed on the electronic component 1 and bonded to the circuit board 31 and the circuit board is pushed in by a pushing mechanism, when the pushing amount is 1 [mm], the external electrode 8 is cracked 20 times. The number of occurrences was 0, and in the case of the first reference electrode, it was 1 out of 5 times, and in the case of the second comparison electrode, it was 0 times out of 5.
When the pushing amount is 2 [mm], it is 0 times in 20 times, 4 times in 5 times, 2 times in 5 times, respectively, and when the pushing amount is 3 [mm], each time is 0 times in 20 times. It was 4 out of 5 times and 4 out of 5 times.

The electronic component 1 on which the external electrode 8 is formed does not generate cracks for any depth of cut, and has high bending resistance with respect to the first comparison electrode 2.
Thus, the external electrode 8 in which the CrAu layer is laminated three times can realize excellent shear strength and bending resistance.
Thus, it is estimated that the external electrode 8 laminated with the CrAu layer exhibits excellent shear strength and bendability for the following reason.

That is, in the external electrode 8 shown in FIG. 1C, the second, fourth, and sixth Au layers diffuse into the solder, and the third and fifth Cr layers are released from the external electrode 8. .
Since the released Cr layer does not form a compound with the solder, it remains in the solder without dissolving in the solder, and this functions as a reinforcing material for reinforcing the solder.
When the inventor of the present application searched for the state of the detached Cr layer in the solder using an analytical instrument or the like, strip-like Cr was found in the vicinity of the external electrode 8 through the solder region. I have been there.

In this way, the free Cr layer may be separated into strips, or may be present as smaller Cr pieces, or may be present as smaller Cr grains or other reactions. It is also possible that the grains are growing.
In any case, it is considered that the Cr layer separated into the solder has some function to influence the mechanical characteristics of the solder joint surface of the external electrode 8 and exhibits high shear strength and bending resistance.
It is also conceivable that the effect of Au diffused in the solder also contributes.

According to this embodiment described above,
An electronic element (for example, a crystal unit 6 or a semiconductor is also possible), a storage container (a package made up of the lid 2 and the base 3) for storing the electronic element in a hollow portion (cavity portion 13) formed inside, an electronic device A container electrode (internal electrodes 4, 14, and penetrating electrodes 7, 17, etc.) formed from the inside of the storage container to the outside is electrically connected to the element, and is electrically connected to the container electrode. An electronic component (electronic component 1) including external electrodes (external electrodes 8 and 18) formed on the bottom surface can be provided.
The external electrodes (external electrodes 8, 18) are formed on the bottom surface of the storage container (the bottom surface of the base 3), and are formed of a first metal layer (such as a Cr layer) joined to the solder and the first metal layer. A second metal layer (such as an Au layer) formed on the surface and dissolved in solder, and a third metal layer (such as a Cr layer) formed on the surface of the second metal layer and not dissolved in solder are used. Is formed.
And this structure corresponds to what repeated the CrAu layer twice if the Au layer for oxidation prevention is formed on the surface, and corresponds to what was repeated three times if the CrAu layer is further laminated thereon. Note that an alloy of a plurality of metals can be used as the metal layer.

For the first and third metal layers, a metal element that does not constitute an intermetallic compound with solder is used, and for the second metal layer, a metal element that constitutes an intermetallic compound with solder is used.
Therefore, the external electrodes (external electrodes 8 and 18) are formed on the bottom surface (the bottom surface of the base 3) of the storage container, and the first metal layer (such as a Cr layer) that does not constitute solder and an intermetallic compound, and the first A second metal layer (such as an Au layer) formed on the surface of the metal layer and constituting the solder and the intermetallic compound; and a third metal layer formed on the surface of the second metal layer and not forming the solder and the intermetallic compound. It can also be said that the metal layer (such as a Cr layer) is used.

Further, the external electrodes 8 and 18 are formed on the surface of the third metal layer and formed on the surface of the fourth metal layer (Au layer or the like) dissolved in the solder and the fourth metal layer. A fifth metal layer (Cr layer) that does not melt can be formed.
Then, an antioxidant layer can be formed on the Au layer as the outermost surface layer.

  The electronic component 1 is bonded to the circuit board 31 to form an oscillation circuit together with other electronic elements such as a capacitor and a coil, and the computer obtains the operation timing by the oscillation, and the timepiece measures the time. Therefore, various types of oscillators including an oscillation unit (oscillation circuit) that oscillates using electronic components and an operation unit (CPU (Central Processing Unit), etc.) that operates by acquiring operation timing by oscillation of the oscillation unit The electronic device can be provided.

In this case, an electronic element (such as a crystal resonator 6), a storage container (a package including the lid 2 and the base 3) that stores the electronic element in a hollow portion formed inside, and the electronic element are electrically connected. A container electrode (through electrodes 7, 17, etc.) formed from the inside to the outside of the storage container, and a metal layer (Cr (first electrode) formed on the bottom surface of the storage container and joined to the solder, electrically connected to the container electrode 1) and a circuit board (circuit board 31) which is bonded to the metal layer via solder and provided with other electronic elements.
Then, the metal (third and fifth Cr layers) that does not dissolve in the solder is detached and diffused in the solder.

  Also, an electronic device is installed on the base (base 3) with an electronic device (such as a crystal resonator 6) and a container electrode for wiring (such as through electrodes 7 and 17) electrically connected to the electronic device. A process, a sealing step in which the electronic element is sealed in a storage container composed of a base and a lid by bonding a lid (lid 2) to the base on which the electronic element and the container electrode are installed; and a sputtering method on the bottom surface of the storage container The first metal layer (Cr layer) to be bonded to the solder is formed by using the above method, the second metal layer (Au layer) dissolved in the solder is formed on the surface of the first metal layer, and the second metal layer The electronic component 1 can be manufactured by an electronic component manufacturing method configured using an external electrode forming step of forming an external electrode by forming a third metal layer (Cr) that does not dissolve in solder on the surface.

The following effects can be obtained by the present embodiment described above.
(1) Since the metal layer formed on the bottom surface of the base 3 is not easily oxidized by laminating the metal layer, the mounting strength of the electronic component 1 is increased and the repairability is excellent.
(2) In the CrAu layer, the Au layer diffuses uniformly in the solder, and the joint interface of the external electrode 8 becomes Cr and Sn, but Cr and Sn are in the temperature range of reflow or high temperature test (up to 260 ° C.) In, there is almost no formation and growth of the alloy, and it is excellent in heat resistance and impact resistance.
(3) Since there is no growth of an alloy of Cr and solder, it is not necessary to form a thick Cr layer, and the film stress can be kept small, so that the substrate bending resistance is excellent.
(4) When Cr—Au is used for the internal electrodes 4, 16, etc., the apparatus can be shared when forming the external electrodes 8, 18. Furthermore, if the film thickness of each layer is made the same inside and outside, it is not necessary to change the conditions of the apparatus, and the capital investment can be suppressed and the productivity can be increased.
(5) It is brittle and low in strength compared to ceramics and the like, but it is possible to adopt a transparent glass package at a low cost.
(6) When a step portion exists in the formation region of the external electrode 8, the risk of disconnection can be reduced by stacking.
(7) Since the external electrode 8 can be formed by a sputtering method, a metal layer can be formed in a dry atmosphere, thereby preventing elution of the through electrode 7 and the like.
(8) It is possible to realize a high-quality glass package that combines mounting strength, repairability, heat resistance, and substrate bending resistance.

DESCRIPTION OF SYMBOLS 1 Electronic component 2 Lid 3 Base 4 Internal electrode 5 Support part 6 Crystal oscillator 7 Through electrode 8 External electrode 13 Cavity 16 Internal electrode 17 Through electrode 18 External electrode 31 Circuit board 32 Substrate wiring 33 Solder 34 Solder 35 Substrate wiring

Claims (6)

An electronic element;
A storage container for storing the electronic element in a hollow portion formed inside;
A container electrode electrically connected to the electronic element and formed from the inside of the storage container to the outside;
An external electrode electrically connected to the container electrode and formed on the bottom surface of the storage container;
An electronic component comprising:
The external electrode is
A first metal layer formed on the bottom surface of the storage container and joined to the solder;
A second metal layer formed on the surface of the first metal layer and dissolved in solder;
A third metal layer formed on the surface of the second metal layer and not dissolved in solder;
An electronic component characterized by being formed using The external electrode includes
A fourth metal layer formed on the surface of the third metal layer and dissolved in solder;
A fifth metal layer formed on the surface of the fourth metal layer and not dissolved in solder;
The electronic component according to claim 1, wherein the electronic component is formed.   The electronic component according to claim 1, wherein an antioxidant film is formed as the outermost surface layer.   The electronic component according to claim 1, wherein the storage container is made of glass.   The electronic component according to any one of claims 1 to 4, wherein the electronic component is a crystal resonator. An electronic element installation step of installing an electronic element and a container electrode for wiring electrically connected to the electronic element on a base;
An enclosing step of enclosing the electronic element in a storage container including the base and the lid by bonding a lid to the base on which the electronic element and the container electrode are installed;
Forming a first metal layer to be bonded to the solder on a bottom surface of the storage container; forming a second metal layer to be dissolved in the solder on a surface of the first metal layer; and forming a surface on the surface of the second metal layer. Forming an external electrode by forming a third metal layer that does not dissolve in the solder;
Electronic component manufacturing method configured using

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