JP2011228352A - Lid, base and package for electronic component - Google Patents

Lid, base and package for electronic component Download PDF

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Publication number
JP2011228352A
JP2011228352A JP2010094269A JP2010094269A JP2011228352A JP 2011228352 A JP2011228352 A JP 2011228352A JP 2010094269 A JP2010094269 A JP 2010094269A JP 2010094269 A JP2010094269 A JP 2010094269A JP 2011228352 A JP2011228352 A JP 2011228352A
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metal
brazing
tin
lid
electronic component
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Yoshikiyo Ogasawara
好清 小笠原
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Daishinku Corp
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Daishinku Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PROBLEM TO BE SOLVED: To provide a lid and a package for an electronic component that improve heat resistance at a hermetic seal portion of the package for the electronic component to obtain stable characteristics of the electronic component.SOLUTION: A lid 3 has a rectangular shape in a plan view and comprises a plurality of layers of metal materials and a core portion 30 where a metal brazing portion 31 is formed on the surface thereof. The metal brazing portion 31 has a lower brazing portion 31a, an upper brazing portion 31b and a plurality of concave portions 311. The concave portion 311 consists of the upper brazing portion 31b which is bottomless and the lower brazing portion 31a which has a bottom, and is formed of, as a whole, a convex shape having many small openings with bottoms. A base 1 is an open-topped box having a rectangular solid outer shape as a whole and includes a bottom portion 10, a bank portion 11, a step portion 1c and a storage portion of an electric component element which basically has a convex cross section. The lid 3 is placed on the base 1 so that the opening of the base 1 is sealed by fitting the metal brazing portion 31 on top of the bank portion 11.

Description

本発明は、圧電振動デバイス等に使用される電子部品用パッケージおよび当該電子部品用パッケージに用いられるリッドおよびベースに関するものである。   The present invention relates to an electronic component package used for a piezoelectric vibration device and the like, and a lid and a base used for the electronic component package.

電子部品用パッケージのキャビティ(内部空間)は、当該キャビティ内に収納した電子部品素子の特性劣化を防止し、安定した特性を得るために気密封止されている。このような構成の例として電子部品素子として水晶振動素子を用いた水晶振動子や水晶発振器をあげることができる。   The cavity (internal space) of the electronic component package is hermetically sealed in order to prevent deterioration of the characteristics of the electronic component element housed in the cavity and to obtain stable characteristics. As an example of such a configuration, a crystal resonator or a crystal oscillator using a crystal resonator element as an electronic component element can be given.

近年、このような気密封止には鉛フリーハンダが用いられる。特開2002−359312号には、少なくとも接合面に鉛フリーはんだを塗布したフタ部により密閉容器構造を成す電子部品容器において、該フタ部に塗布する鉛フリーはんだ部と当接する容器部には、金スズ合金めっき膜を形成することを特徴とする電子部品容器が開示されている。   In recent years, lead-free solder is used for such hermetic sealing. In Japanese Patent Application Laid-Open No. 2002-359212, in an electronic component container having a sealed container structure with a lid part in which lead-free solder is applied to at least a joint surface, the container part in contact with the lead-free solder part applied to the lid part is An electronic component container characterized by forming a gold-tin alloy plating film is disclosed.

特開2002−359312号 JP 2002-359212 A

上記特許文献には鉛フリーハンダの例として、Sn―Ag―Cu系やSn―Cu系等の合金が例示されているが、このような合金は融点が比較的低いため耐熱性に劣る問題があった。例えば、鉛フリーハンダにより気密封止された電子部品容器は、電子機器等の実装基板にリフローソルダリング技術を用いて接合されることが多いが、当該リフローソルダリング時の温度条件によっては前記鉛フリーハンダが溶融あるいは軟化し、電子部品の特性が悪化することがあった。   In the above-mentioned patent documents, Sn-Ag-Cu-based and Sn-Cu-based alloys are exemplified as examples of lead-free solder. However, since such alloys have a relatively low melting point, there is a problem of poor heat resistance. there were. For example, an electronic component container hermetically sealed with lead-free solder is often bonded to a mounting board of an electronic device or the like using a reflow soldering technique, but depending on the temperature conditions during the reflow soldering, the lead The free solder melts or softens, and the characteristics of the electronic component may deteriorate.

本発明は上記問題点を解決するためになされたもので、電子部品用パッケージの気密封止部における耐熱性を向上させ、特性の安定な電子部品を得るためのリッドおよび電子部品用パッケージを提供することを目的としている。   The present invention has been made to solve the above-described problems, and provides a lid and an electronic component package for improving the heat resistance in the hermetic sealing portion of the electronic component package and obtaining an electronic component having stable characteristics. The purpose is to do.

本発明は、上記目的を達成するためになされたもので、請求項1に記載したように、開口部と当該開口部につながる電子部品素子収納部を有するベースの前記開口部を気密封止するリッドであって、少なくとも前記開口部と接合される接合領域に金属ろう部が形成され、当該金属ろう部は錫と他の金属を有する構成で、リッドのコア部に前記他の金属からなる下ろう部を形成し、その上面に錫または錫と他の金属からなる錫合金を有する上ろう部を形成するとともに、前記金属ろう部の一部に凹部が形成されていることを特徴としている。   The present invention has been made to achieve the above object, and as described in claim 1, hermetically seals the opening of a base having an opening and an electronic component element storage portion connected to the opening. In the lid, a metal brazing portion is formed at least in a joining region to be joined to the opening, and the metal brazing portion includes tin and another metal, and the core portion of the lid is made of the other metal. A brazing part is formed, and an upper brazing part having tin or a tin alloy made of tin and another metal is formed on the upper surface thereof, and a concave part is formed in a part of the metallic brazing part.

本発明によれば、少なくとも前記開口部と接合される接合領域に金属ろう部が形成され、当該金属ろう部は錫と他の金属を有する構成で、リッドのコア部側に前記他の金属からなる下ろう部を形成し、その上面に錫または錫と他の金属からなる錫合金を有する上ろう部を形成するとともに、前記上ろう部および下ろう部の一部に凹部が形成されている構成であるので、金属ろう部により溶融接合する際、上部にある上ろう部の錫または錫合金が軟化または溶融し、前記凹部に一部が入り込む機会が増える。このように凹部に錫または錫合金が入り込む状態で気密封止が行われた構成により、接合した金属ろう部においては、平面視すなわち開口部側から見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)をつくり出すことができる。なお、これら各領域は前記錫合金の共晶温度より高い融点となっている。このような領域構成がつくり出されることによりリフローソルダリングを行ったとしても、高融点領域の存在により、金属ろう部全体としての耐熱性が向上する。   According to the present invention, a metal brazing part is formed at least in a joining region joined to the opening, and the metal brazing part has a structure including tin and another metal, and the core part side of the lid includes the other metal. A lower brazing portion is formed, and an upper brazing portion having tin or a tin alloy made of tin and another metal is formed on the upper surface thereof, and a concave portion is formed in a part of the upper brazing portion and the lower brazing portion. Since it is a structure, when it melt-joins by a metal brazing part, the tin or tin alloy of the upper brazing part in an upper part softens or fuse | melts, and the opportunity for a part to enter into the said recessed part increases. Thus, with the configuration in which airtight sealing is performed with tin or a tin alloy entering the recess, in the joined metal brazing portion, a region having a high tin concentration and a low melting point when viewed from the top, that is, from the opening side (low It is possible to create a region (high melting point region) having a lower tin concentration and a higher melting point than the low melting point region and the low melting point region. Each of these regions has a melting point higher than the eutectic temperature of the tin alloy. Even if reflow soldering is performed by creating such a region configuration, the heat resistance of the entire metal brazing portion is improved due to the presence of the high melting point region.

前記金属ろう部に形成された凹部は、上ろう部は厚さ方向に貫通し、下ろう部は有底の構成であってもよい。   The concave portion formed in the metal brazing portion may be configured such that the upper brazing portion penetrates in the thickness direction and the lower brazing portion has a bottom.

上記構成であれば、上記作用に加えて溶融後の錫合金の錫濃度を制御することができ、接合した金属ろう部に平面で見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を安定的につくり出すことができる。   If it is the said structure, in addition to the said effect | action, the tin density | concentration of the tin alloy after a fusion | melting can be controlled. A region having a lower tin concentration and a higher melting point (high melting point region) than the low melting point region can be stably produced.

また前記金属ろう部に形成された凹部は複数の小孔からなり、金属ろう部の一部または全部に分散配置されている構成であってもよい。   Further, the concave portion formed in the metal brazing portion may be composed of a plurality of small holes and dispersedly arranged in a part or all of the metal brazing portion.

上記構成であれば、上記各作用に加えて接合した金属ろう部に、平面で見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を金属ろう部全体に渡って複数個安定的につくり出すことができる。   If it is the said structure, in addition to said each effect | action, in the metal brazing part joined, the tin concentration is low and melting | fusing point is higher than the said low melting | fusing point area | region (low melting | fusing point area | region) with a high tin concentration and a low melting point seeing in a plane A plurality of regions (high melting point regions) can be stably formed over the entire metal brazing part.

また前記金属ろう部に形成された凹部がリッドの最外周領域において周状に形成された構成であってもよい。 Moreover, the structure by which the recessed part formed in the said metal brazing part was formed in the circumferential shape in the outermost periphery area | region of a lid may be sufficient.

上記構成であれば、上記各作用に加えて、接合した金属ろう部において、最外周部分に錫または錫合金が移動し、錫濃度が高く融点が低い領域(低融点領域)を周状につくり出し、その内側に当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を周状につくり出すことができる。このような構成により、リッドの内側部分に高融点領域の金属ろう部をつくることができるので、リフローソルダリング時においてもパッケージ内部に軟化溶融した金属ろう部を構成する金属ろう材が入り込むことを抑制できる。   With the above configuration, in addition to the above actions, tin or a tin alloy moves to the outermost peripheral portion in the joined metal brazing portion, and a region having a high tin concentration and a low melting point (low melting point region) is created in a circumferential shape. In addition, a region having a lower tin concentration and a higher melting point (high melting point region) than the low melting point region can be formed in a circumferential shape. With such a configuration, a high-melting-point metal brazing part can be formed on the inner part of the lid, so that even during reflow soldering, the metal brazing material constituting the soft and molten metal brazing part enters the package. Can be suppressed.

上記金属ろう部の構成を堤部と電子備品素子収納部を有するベースに適用してもよく、リッドにより気密接合される周状の堤部と当該堤部により形成される電子部品素子収納部を有するベースであって、前記リッドと接合される堤部の上面に金属ろう部が形成され、当該金属ろう部は錫と他の金属を有する構成で、堤部上面にリッドのコア部に前記他の金属からなる下ろう部を形成し、その上面に錫または錫と他の金属からなる錫合金を有する上ろう部を形成するとともに、前記上ろう部および下ろう部の一部に凹部が形成されている構成であってもよい。   The structure of the metal brazing part may be applied to a base having a bank part and an electronic equipment element storage part. A circumferential bank part hermetically joined by a lid and an electronic component element storage part formed by the bank part are provided. A metal brazing portion is formed on the upper surface of the bank portion to be joined to the lid, and the metal brazing portion includes tin and other metals, and the core portion of the lid is formed on the upper surface of the bank portion. Forming a lower brazing portion made of the above metal, forming an upper brazing portion having tin or a tin alloy made of tin and another metal on the upper surface, and forming a recess in a part of the upper brazing portion and the lower brazing portion It may be configured.

上記構成であれば、金属ろう部により溶融接合する際、上部にある上ろう部の錫または錫合金が軟化または溶融し、前記凹部に一部が入り込む機会が増える。このように凹部に錫または錫合金が入り込む状態で気密封止が行われた構成により、接合した金属ろう部においては、平面で見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)をつくり出すことができる。なお、これら各領域は前記錫合金の共晶温度より高い融点となっている。このような領域構成がつくり出されることによりリフローソルダリングを行ったとしても、高融点領域の存在により、金属ろう部全体としての耐熱性が向上する。   If it is the said structure, when melt-bonding by a metal brazing part, the tin or tin alloy of the upper brazing part in an upper part will soften or fuse | melt, and the opportunity for a part to enter into the said recessed part increases. Thus, by the structure in which the hermetic sealing is performed in a state in which the tin or the tin alloy enters the recess, in the joined metal brazing portion, the tin concentration is high and the melting point is low as seen in a plane (low melting point region) and the concerned A region having a lower tin concentration and a higher melting point than the low melting point region (high melting point region) can be produced. Each of these regions has a melting point higher than the eutectic temperature of the tin alloy. Even if reflow soldering is performed by creating such a region configuration, the heat resistance of the entire metal brazing portion is improved due to the presence of the high melting point region.

さらに上記各構成のリッドと、開口部と当該開口部につながる電子部品収納部を有するベースと、からなる電子部品用パッケージであって、前記ベースの開口部をリッドで気密封止した電子部品用パッケージであってもよい。 Furthermore, the electronic component package includes a lid having the above-described configuration, and an opening and a base having an electronic component storage unit connected to the opening, and the opening of the base is hermetically sealed with the lid. It may be a package.

上記構成によれば、金属ろう部により溶融接合する際、上部にある上ろう部の錫または錫合金が軟化または溶融し、前記凹部に一部が入り込む機会が増える。このように凹部に錫または錫合金が入り込む状態で気密封止が行われた構成により、接合した金属ろう部に平面で見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)をつくり出すことができる。このような領域構成がつくり出されることによりリフローソルダリングを行ったとしても、高融点領域の存在により、金属ろう部全体としての耐熱性が向上する。 According to the above configuration, when fusion bonding is performed by the metal brazing portion, tin or tin alloy in the upper brazing portion in the upper portion is softened or melted, and the chance that a part of the tin enters into the concave portion is increased. As a result of the hermetic sealing with the tin or tin alloy entering the recess, the bonded metal brazing portion has a high tin concentration and a low melting point (low melting point region) when viewed in plan, and the low melting point. A region having a lower tin concentration and a higher melting point (high melting point region) than the region can be created. Even if reflow soldering is performed by creating such a region configuration, the heat resistance of the entire metal brazing portion is improved due to the presence of the high melting point region.

また、溶融後の錫合金の錫濃度を制御することができ、接合した金属ろう部に平面で見て錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を安定的につくり出すことができる。 Moreover, the tin concentration of the tin alloy after melting can be controlled, and the tin concentration is higher than the low melting point region (the low melting point region) where the tin concentration is high and the melting point is low when viewed in plan. A region having a low melting point and a high melting point (high melting point region) can be stably produced.

さらに接合した金属ろう部に錫濃度が高く融点が低い領域(低融点領域)と当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を金属ろう部全体に渡って安定的につくり出すことができる。 Furthermore, the region where the tin concentration is high and the melting point is low (low melting point region) and the region where the tin concentration is lower and the melting point is higher than the low melting point region (high melting point region) are stable throughout the metal brazing portion. Can be created.

また、接合した金属ろう部において、最外周部分に錫または錫合金が移動し、錫濃度が高く融点が低い領域(低融点領域)を周状につくり出し、その内側に当該低融点領域より当該錫濃度が低く融点が高い領域(高融点領域)を周状につくり出すことができる。このような構成により、リッドの内側部分に高融点領域の金属ろう部をつくることができるので、リフローソルダリング時においてもパッケージ内部に金属ろう部を構成する軟化溶融した金属ろう材が入り込む機会を抑制できる。 Further, in the joined metal brazing portion, tin or a tin alloy moves to the outermost peripheral portion, and a region having a high tin concentration and a low melting point (low melting point region) is formed in a circumferential shape, and the tin is introduced from the low melting point region to the inside. A region having a low concentration and a high melting point (high melting point region) can be formed in a circumferential shape. With such a configuration, a high-melting-point metal brazing part can be formed in the inner part of the lid, so that the opportunity for the soft and molten metal brazing material constituting the metal brazing part to enter the package even during reflow soldering. Can be suppressed.

本発明によれば、接合後の金属ろう部の耐熱性が向上することにより、電子部品用パッケージの気密封止性を向上させ、特性の安定な電子部品を得るためのリッドおよび電子部品用パッケージを得ることができる。   According to the present invention, the heat resistance of the metal brazed portion after joining is improved, thereby improving the hermetic sealing performance of the electronic component package, and the lid and electronic component package for obtaining an electronic component having stable characteristics Can be obtained.

本発明による第1の実施形態に用いるリッドの平面図The top view of the lid used for 1st Embodiment by this invention 図1のA−A断面図AA sectional view of FIG. 本発明による第1の実施形態を示す圧電振動デバイスの内部構造図The internal structure figure of the piezoelectric vibration device which shows 1st Embodiment by this invention 図3の部分拡大図Partial enlarged view of FIG. 本発明による第2の実施形態を示すベースの内部構造を示す断面図Sectional drawing which shows the internal structure of the base which shows 2nd Embodiment by this invention 本発明による第3の実施形態に用いるリッドの平面図The top view of the lid used for the 3rd embodiment by the present invention 図6のB−B断面図BB sectional view of FIG. 本発明による第4の実施形態に用いるリッドの平面図The top view of the lid used for the 4th embodiment by the present invention 金属ろう部の構成を示す他の例Another example showing the configuration of a metal brazing part 金属ろう部の構成を示す他の例Another example showing the configuration of a metal brazing part 金属ろう部の構成を示す他の例Another example showing the configuration of a metal brazing part 金属ろう部の構成を示す他の例Another example showing the configuration of a metal brazing part

以下、本発明による好ましい実施の形態について図面に基づいて説明する。
本発明による第1の実施の形態を表面実装型の水晶振動デバイスを例にとり図1乃至図4とともに説明する。
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
A first embodiment of the present invention will be described with reference to FIGS. 1 to 4 by taking a surface-mount type crystal vibrating device as an example.

図3に示すように表面実装型水晶振動デバイスは、上部が開口した凹部を有するベース1と、当該ベースの中に収納される圧電振動板である水晶振動板2と、パッケージの開口部に接合されるリッド3とからなる。 As shown in FIG. 3, the surface-mount type crystal vibrating device is bonded to a base 1 having a recess having an upper opening, a crystal vibrating plate 2 that is a piezoelectric diaphragm housed in the base, and an opening of a package. The lid 3 is made up of.

リッド3は平面視矩形状であり、多層の金属材料からなる構成で、コア部30の表面に金属ろう部31が形成された構成である。コア部30はコバール材(鉄-ニッケル-コバルト合金)からなり、当該コア部30のベース1との接合面にはリッドの外周近傍に沿って周状の金属ろう部31が形成されている。なおコア部30の金属ろう部31を形成した反対面にニッケル層を形成してもよい。またコア部はコバール材にニッケルメッキされた構成や、コバール材とニッケルを圧延にてクラッド化した構成や、コバール材をニッケルで挟み込んだ状態で圧延にてクラッド化した構成であってもよい。 The lid 3 has a rectangular shape in plan view, and is composed of a multilayer metal material, and has a structure in which a metal brazing portion 31 is formed on the surface of the core portion 30. The core part 30 is made of Kovar material (iron-nickel-cobalt alloy), and a circumferential metal brazing part 31 is formed along the vicinity of the outer periphery of the lid on the joint surface of the core part 30 with the base 1. A nickel layer may be formed on the opposite surface of the core portion 30 where the metal brazing portion 31 is formed. The core portion may have a configuration in which the Kovar material is nickel-plated, a configuration in which the Kovar material and nickel are clad by rolling, or a configuration in which the Kovar material is clad by rolling with the nickel sandwiched between nickel.

金属ろう部31は下ろう部31aと上ろう部31bとからなる。下ろう部31aはコア部30に接して形成され、また上ろう部31bは下ろう部31aの上部に形成されている。下ろう部31aは錫との合金を形成する金属である銅からなり、上ろう部31bは錫合金である錫銅共晶合金からなる。なお、錫と銅の比率は共晶合金でなくてもよく、錫100%〜錫85%程度の比率であってもよい。 The metal brazing part 31 includes a lower brazing part 31a and an upper brazing part 31b. The lower wax portion 31a is formed in contact with the core portion 30, and the upper wax portion 31b is formed on the upper portion of the lower wax portion 31a. The lower brazing portion 31a is made of copper, which is a metal that forms an alloy with tin, and the upper brazing portion 31b is made of a tin-copper eutectic alloy, which is a tin alloy. In addition, the ratio of tin and copper may not be a eutectic alloy, and may be a ratio of about 100% tin to about 85% tin.

上ろう部と下ろう部の構成は、上述の構成に限定されるものではなく、例えば下ろう部に銅層、上ろう部に錫層を形成してもよい。また下ろう部に金層、上ろう部に錫層または金錫層を形成した構成であってもよく、上ろう部に錫または錫と他の金属からなる錫合金、下ろう部に前記他の金属を形成した構成であればよい。特に上述したように鉛フリー材料を用いることにより環境対応させることができる。 The configuration of the upper brazing portion and the lower brazing portion is not limited to the above-described configuration. For example, a copper layer may be formed in the lower brazing portion and a tin layer may be formed in the upper brazing portion. Alternatively, a gold layer may be formed on the lower brazing portion, and a tin layer or a gold-tin layer may be formed on the upper brazing portion. Tin or an alloy of tin and other metals may be formed on the upper brazing portion, and the above-described other may be provided on the lower brazing portion. Any structure may be used as long as the metal is formed. In particular, as described above, the environment can be accommodated by using a lead-free material.

また金属ろう部31は多数個の凹部311が形成されている。凹部311は上ろう部31bは貫通した構成で、下ろう部31aは有底の構成からなり、全体として有底の小孔が多数個形成された凹部構成となっている。図1に示すように、凹部は平面視長方形構成であり、金属ろう部の長辺には当該凹部が2列並列に並んだ構成で、かつ短辺には1列並んだ構成となっており、金属ろう部全体に凹部が分散配置された構成となっている。なお、これら凹部の構造および配置は一例であり、この例に限定されるものではない。例えば、凹部が平面視円形または楕円形であってもよい。この場合、軟化または溶融した錫または錫合金の凹部への流れ込みがスムースになり、高融点領域の形成を促進することができる。 The metal brazing part 31 has a large number of recesses 311 formed therein. The recess 311 has a configuration in which the upper brazing portion 31b penetrates and the lower brazing portion 31a has a bottomed configuration, and has a concave configuration in which a large number of bottomed small holes are formed as a whole. As shown in FIG. 1, the recesses have a rectangular configuration in plan view, the metal brazing part has a configuration in which the recesses are arranged in two rows in parallel, and the short side has a configuration in which one row is arranged. The concave portions are arranged in a distributed manner throughout the metal brazing portion. In addition, the structure and arrangement | positioning of these recessed parts are examples, and are not limited to this example. For example, the concave portion may be circular or elliptical in plan view. In this case, the flow of softened or melted tin or tin alloy into the recesses becomes smooth, and the formation of the high melting point region can be promoted.

ベース1は全体として外形が直方体形状で、上部に開口部を有する箱形であり、底部10と堤部11と段部1cを有し、断面で見て概ね凹形の電子部品素子収納部を有した構成である。本実施の形態においては、ベースはセラミックスを基体として、内外部に金属膜からなる導通電極が形成された構成である。なおベースの材料としてホウケイ酸ガラス等のガラス材を用いてもよい。   The base 1 has a rectangular parallelepiped outer shape as a whole, has a box shape having an opening at the top, has a bottom portion 10, a bank portion 11, and a step portion 1c, and has a generally concave electronic component element housing portion as viewed in cross section. It is the structure which it had. In this embodiment, the base has a structure in which a conductive electrode made of a metal film is formed on the inside and outside with ceramics as a base. A glass material such as borosilicate glass may be used as the base material.

堤部11は底部10の外周から上方に伸長する状態に形成され、このような構成により、開口部と当該開口部につながる電子部品素子収納部Cが形成され、当該電子部品素子収納部Cの内側には内側壁が形成されている。また前記段部1cの上面は平坦面であり、当該上面に電極パッド12,13(13は図示せず)が所定の間隔をもって設けられている。 The bank portion 11 is formed so as to extend upward from the outer periphery of the bottom portion 10. With such a configuration, an opening and an electronic component element storage portion C connected to the opening are formed, and the electronic component element storage portion C An inner wall is formed on the inner side. The upper surface of the stepped portion 1c is a flat surface, and electrode pads 12 and 13 (13 is not shown) are provided on the upper surface with a predetermined interval.

またベースに周状に形成された堤部11の上面には金属層111が周状に形成され、当該金属層111は後述のリッドと気密接合される領域となる。金属層111は例えばベースのセラミックに接してタングステン層、ニッケル層、金層、銅層の順で積層形成される。なお、タングステン層はセラミックと一体焼成され、ニッケル、金、銅の各層はめっきまたは真空蒸着等の手法により形成される。なお、当該金属層構成は一例であり、最上層の銅層は形成しない構成も可能であり、また他の金属材料からなる層構成であってもよい。 In addition, a metal layer 111 is formed on the upper surface of the bank portion 11 that is formed in a circumferential shape on the base, and the metal layer 111 is a region that is hermetically bonded to a lid described later. For example, the metal layer 111 is laminated in order of a tungsten layer, a nickel layer, a gold layer, and a copper layer in contact with the base ceramic. The tungsten layer is integrally fired with the ceramic, and the nickel, gold, and copper layers are formed by a technique such as plating or vacuum deposition. In addition, the said metal layer structure is an example, the structure which does not form the uppermost copper layer is also possible, and the layer structure which consists of another metal material may be sufficient.

水晶振動板2はATカット水晶振動板であり、平面視矩形状で長辺と短辺を有している。水晶振動板2の主面中央部には表裏に励振電極21,22が形成されている。当該励振電極21,22も平面視矩形状で水晶振動板と相似しており、長辺と短辺を有している。表裏の各励振電極21,22は一方の励振電極の短辺から一方の水晶振動板の短辺に引出電極(図示せず)が引き出されている。なお、ATカット水晶振動板以外に音叉型水晶振動板やその他の圧電振動板を用いてもよい。 The quartz crystal plate 2 is an AT cut quartz plate and has a rectangular shape in plan view and has a long side and a short side. Excitation electrodes 21 and 22 are formed on the front and back of the central portion of the main surface of the crystal diaphragm 2. The excitation electrodes 21 and 22 have a rectangular shape in a plan view and are similar to a crystal diaphragm, and have long sides and short sides. In each of the front and back excitation electrodes 21 and 22, an extraction electrode (not shown) is drawn from the short side of one excitation electrode to the short side of one crystal diaphragm. In addition to the AT-cut quartz diaphragm, a tuning fork type quartz diaphragm or other piezoelectric diaphragm may be used.

励振電極および引出電極は金属膜からなり、例えば水晶振動板に接して、下地層としてクロム膜が形成され、当該クロム膜の上部に上層として金膜が形成された2層構成となっている。当該金属膜構成は他の金属材料であってもよく、例えば下地層にチタン膜やニッケル膜を用いてもよい。また上層に銀膜や銅膜等の材料あるいは金合金、銀合金、銅合金の各合金膜を用いてもよい。 The excitation electrode and the extraction electrode are made of a metal film. For example, the excitation electrode and the extraction electrode have a two-layer structure in which a chromium film is formed as a base layer in contact with a quartz diaphragm and a gold film is formed as an upper layer on the chromium film. The metal film configuration may be other metal materials, for example, a titanium film or a nickel film may be used for the underlayer. Alternatively, a material such as a silver film or a copper film, or an alloy film of a gold alloy, a silver alloy, or a copper alloy may be used for the upper layer.

上記電極形成された水晶振動板は、前記電極パッド12,13に導電接合材Sを用いて短辺が片持ち保持され、前記引出電極と導電接合される。導電接合材Sは鉛フリーハンダや導電フィラーを含む樹脂接着剤が用いられる。 The electrode-formed quartz diaphragm is cantilevered with the electrode pads 12 and 13 using a conductive bonding material S and is conductively bonded to the extraction electrode. As the conductive bonding material S, a resin adhesive containing lead-free solder or conductive filler is used.

前記金属ろう部31が前記堤部の上面に対応し、開口部を塞ぐようにリッド3をベース1に搭載する。そして、ベース1とリッド3とを前記金属ろう部で接合することにより、内部に収納された水晶振動板2が気密収納される。内部の雰囲気は窒素ガス等の不活性ガスや真空雰囲気が用いられるが、本実施の形態では真空雰囲気を用いている。 The metal brazing portion 31 corresponds to the upper surface of the bank portion, and the lid 3 is mounted on the base 1 so as to close the opening. Then, by joining the base 1 and the lid 3 with the metal brazing portion, the quartz crystal diaphragm 2 housed therein is airtightly housed. As the internal atmosphere, an inert gas such as nitrogen gas or a vacuum atmosphere is used. In this embodiment, a vacuum atmosphere is used.

気密接合後においては、金属ろう部は平面で見て低融点領域および高融点領域が形成された構成としている。ただし前記各領域は錫銅合金の共晶温度より高い融点を有している。これにより金属ろう部の耐熱性が全体として向上することにより、電子部品用パッケージの気密封止性を向上させ、特性の安定な電子部品を得るためのリッドおよび電子部品用パッケージを得ることができる。なお、高融点領域は銅比率が増加した錫と銅による金属化合物が形成されやすくなる。この場合、強度に脆さの生じる可能性があるが、銅比率の比較的低い低融点領域により補強を行っている。 After the hermetic joining, the metal brazing portion has a structure in which a low melting point region and a high melting point region are formed in a plan view. However, each said area | region has melting | fusing point higher than the eutectic temperature of a tin copper alloy. As a result, the heat resistance of the metal brazing portion is improved as a whole, thereby improving the hermetic sealing property of the electronic component package and obtaining a lid and an electronic component package for obtaining an electronic component having stable characteristics. . In the high melting point region, a metal compound of tin and copper having an increased copper ratio is likely to be formed. In this case, although the strength may be brittle, reinforcement is performed by a low melting point region having a relatively low copper ratio.

次に本実施の形態に使用したリッドの製造方法および当該リッドを用いた圧電振動デバイスの製造方法について説明する。 Next, a method for manufacturing the lid used in the present embodiment and a method for manufacturing a piezoelectric vibration device using the lid will be described.

図1に示すようにコバールからなるコア部30のベースとの接合面に多数個の凹部を有する金属ろう部31を形成する。具体的には例えばコア部30にフォトリソグラフィ技術を用いてリッドの中央部分をレジストでマスキングを行い、この状態で銅メッキを行い、その後錫銅メッキを行う。これにより銅からなる下ろう部31aと錫銅からなる上ろう部31bを有する金属ろう部31がリッドの外周近傍に周状に形成される。なお、錫銅からなる枠状のプリフォーム材を上ろう部として下ろう部上に融着形成してもよい。 As shown in FIG. 1, a metal brazing portion 31 having a large number of concave portions is formed on the joint surface with the base of the core portion 30 made of Kovar. Specifically, for example, the core portion 30 is masked with a resist at the center portion of the lid using a photolithography technique, and copper plating is performed in this state, and then tin copper plating is performed. Thereby, the metal brazing part 31 having the lower brazing part 31a made of copper and the upper brazing part 31b made of tin copper is formed in a circumferential shape in the vicinity of the outer periphery of the lid. A frame-shaped preform material made of tin copper may be fused and formed on the lower brazing part.

その後小孔からなる凹部を形成する。具体的には例えばレーザービーム等の局所彫り込み手段を用いて金属ろう部の全体に渡って多数個の小孔からなる凹部を形成する。当該凹部の形成により、上ろう部を貫通し下ろう部の途中まで彫り込まれた状態となっている。なお、上ろう部の途中までの彫り込みであってもよいし、下ろう部も貫通する構成としてもよい。このような彫り込み深さは錫合金の比率や接合後の金属ろう部の所望の融点によって設定すればよい。 Thereafter, a recess made of a small hole is formed. Specifically, for example, a local engraving means such as a laser beam is used to form a recess composed of a large number of small holes over the entire metal brazing part. Due to the formation of the concave portion, the upper brazed portion is engraved to the middle of the lower brazed portion. In addition, the engraving to the middle of the upper brazing part may be sufficient, and it is good also as a structure which also penetrates a lower brazing part. Such engraving depth may be set according to the ratio of the tin alloy and the desired melting point of the metal brazing portion after joining.

ベース1の電極パッド12,13に水晶振動板2を搭載し、導電性接合材Sにより導電接合を行う。導電接合材Sを硬化させ、励振電極21,22に対する周波数調整(膜厚調整)を行った後、アニール等の熱安定化処理を行う。その後前記金属ろう部を金属層111に対向させた状態で、ベース1にリッド3を搭載し開口部を塞いだ状態で加熱を行う。加熱は加熱炉によりベース1とリッド3からなる電子部品用パッケージ全体を金属ろう部の溶融する温度で加熱する。例えば錫と銅からなる金属ろう部の場合、温度が250℃〜380℃、時間が1分〜30分の範囲で、所定の温度プロファイルに従って加熱を行う。 The crystal diaphragm 2 is mounted on the electrode pads 12 and 13 of the base 1, and conductive bonding is performed by the conductive bonding material S. After the conductive bonding material S is cured and frequency adjustment (film thickness adjustment) is performed on the excitation electrodes 21 and 22, a thermal stabilization process such as annealing is performed. Thereafter, heating is performed in a state where the lid 3 is mounted on the base 1 and the opening portion is closed with the metal brazing portion facing the metal layer 111. In the heating, the entire electronic component package composed of the base 1 and the lid 3 is heated at a temperature at which the metal brazing portion melts in a heating furnace. For example, in the case of a metal brazing part made of tin and copper, heating is performed according to a predetermined temperature profile in a temperature range of 250 ° C. to 380 ° C. and a time range of 1 minute to 30 minutes.

図4は図3のMで示す領域の拡大図である。図4に示すように、このような加熱により前記凹部の外側にある凸部から軟化溶融した錫または錫銅合金の一部が凹部に流れ込み、全体として凹部領域が錫高濃度領域、前記凸部領域が錫低濃度領域となる。溶融し硬化した後の金属ろう部は全体として錫銅合金を形成するが、平面で見て前記錫高濃度領域は錫リッチな低融点領域313となり、前記錫低濃度領域は銅リッチな高融点領域312となる。このような高融点領域312および低融点領域313が平面で見て複数形成されることにより、接合後の金属ろう部は全体として耐熱性が向上した状態となる。以上の加熱封止により気密封止された圧電振動デバイスを得ることができる。なお、ベースとリッド間に10〜100g程度の荷重かけた状態で加熱を行うことにより、高融点領域312および低融点領域313がより効率的に形成できる。 FIG. 4 is an enlarged view of a region indicated by M in FIG. As shown in FIG. 4, a part of tin or tin-copper alloy softened and melted from the convex portion outside the concave portion by such heating flows into the concave portion, and the concave region as a whole is a tin high concentration region, the convex portion The region becomes a tin low concentration region. The metal brazing portion after being melted and hardened forms a tin-copper alloy as a whole, but the tin high concentration region becomes a tin-rich low melting point region 313 when viewed in plan, and the tin low concentration region is a copper rich high melting point. Region 312 is formed. By forming a plurality of such high melting point regions 312 and low melting point regions 313 in a plan view, the metal brazed portion after joining is in a state of improved heat resistance as a whole. A piezoelectric vibration device hermetically sealed by the above heat sealing can be obtained. Note that the high melting point region 312 and the low melting point region 313 can be more efficiently formed by heating in a state where a load of about 10 to 100 g is applied between the base and the lid.

本発明による第2の実施の形態を表面実装型の水晶振動デバイス用のベースを例にとり図5とともに説明する。ベース1は全体として外形が直方体形状で、上部に開口部を有する箱形であり、底部10と堤部11と段部1cを有し、断面で見て概ね凹形の電子部品素子収納部を有した構成である。本実施の形態においては、ベースはセラミックスを基体として、内外部に金属膜からなる導通電極が形成された構成である。なおベースの材料としてホウケイ酸ガラス等のガラス材を用いてもよい。 A second embodiment of the present invention will be described with reference to FIG. 5 by taking a base for a surface-mount type crystal vibrating device as an example. The base 1 has a rectangular parallelepiped outer shape as a whole, has a box shape having an opening at the top, has a bottom portion 10, a bank portion 11, and a step portion 1c, and has a generally concave electronic component element housing portion as viewed in cross section. It is the structure which it had. In this embodiment, the base has a structure in which a conductive electrode made of a metal film is formed on the inside and outside with ceramics as a base. A glass material such as borosilicate glass may be used as the base material.

堤部11は底部10の外周から上方に伸長する状態に形成され、このような構成により、開口部と当該開口部につながる電子部品素子収納部Cが形成され、当該電子部品素子収納部Cの内側には内側壁が形成されている。また前記段部1cの上面は平坦面であり、当該上面に電極パッド12,13(13は図示せず)が所定の間隔をもって設けられている。 The bank portion 11 is formed so as to extend upward from the outer periphery of the bottom portion 10. With such a configuration, an opening and an electronic component element storage portion C connected to the opening are formed, and the electronic component element storage portion C An inner wall is formed on the inner side. The upper surface of the stepped portion 1c is a flat surface, and electrode pads 12 and 13 (13 is not shown) are provided on the upper surface with a predetermined interval.

またベースに周状に形成された堤部11の上面には金属層111が周状に形成され、当該金属層111は後述のリッドと気密接合される領域となる。金属層111は例えばベースのセラミックに接してタングステン層またはモリブデン層、ニッケル層、金層、銅層の順で積層形成される。なお、タングステン層はセラミックと一体焼成され、ニッケル、金、銅の各層はめっきまたは真空蒸着等の手法により形成される。なお、当該金属層構成は一例であり、最上層の銅層は形成しない構成も可能であり、また他の金属材料からなる各層構成であってもよい。 In addition, a metal layer 111 is formed on the upper surface of the bank portion 11 that is formed in a circumferential shape on the base, and the metal layer 111 is a region that is hermetically bonded to a lid described later. For example, the metal layer 111 is formed in contact with a base ceramic in the order of a tungsten layer or a molybdenum layer, a nickel layer, a gold layer, and a copper layer. The tungsten layer is integrally fired with the ceramic, and the nickel, gold, and copper layers are formed by a technique such as plating or vacuum deposition. In addition, the said metal layer structure is an example, the structure which does not form the uppermost copper layer is also possible, and each layer structure which consists of another metal material may be sufficient.

当該金属層111の上面には金属ろう部41が形成されている。金属ろう部41は第1下ろう部41a、第2下ろう層41bと上ろう部41cとからなる。第1下ろう部41aは金属層111に接して形成され、また第2下ろう部41bは第1下ろう部41aの上に形成され、さらに上ろう部41cは第2下ろう部41bの上部に形成されている。第1下ろう部41aおよび第2下ろう部41bは錫との合金を形成する金属である銅からなり、上ろう部41bは錫合金である錫銅共晶合金からなる。 A metal brazing part 41 is formed on the upper surface of the metal layer 111. The metal brazing portion 41 includes a first lower brazing portion 41a, a second lower brazing layer 41b, and an upper brazing portion 41c. The first lower brazing part 41a is formed in contact with the metal layer 111, the second lower brazing part 41b is formed on the first lower brazing part 41a, and the upper brazing part 41c is an upper part of the second lower brazing part 41b. Is formed. The first lower brazing portion 41a and the second lower brazing portion 41b are made of copper, which is a metal that forms an alloy with tin, and the upper brazing portion 41b is made of a tin-copper eutectic alloy, which is a tin alloy.

上ろう部と下ろう部の構成は、上述の構成に限定されるものではなく、例えば下ろう部に銅層、上ろう部に錫層を形成してもよい。また下ろう部に金層、上ろう部に錫層または金錫層を形成した構成であってもよく、上ろう部に錫または錫と他の金属からなる錫合金、下ろう部に前記他の金属を形成した構成であってもよい。 The configuration of the upper brazing portion and the lower brazing portion is not limited to the above-described configuration. For example, a copper layer may be formed in the lower brazing portion and a tin layer may be formed in the upper brazing portion. Alternatively, a gold layer may be formed on the lower brazing portion, and a tin layer or a gold-tin layer may be formed on the upper brazing portion. Tin or an alloy of tin and other metals may be formed on the upper brazing portion, and the above-described other may be provided on the lower brazing portion. The structure which formed this metal may be sufficient.

また金属ろう部41は多数個の凹部411が形成されている。凹部411は上ろう部41cおよび第2下ろう部41bともに貫通した構成であり、全体として有底の小孔が多数個形成された凹部構成となっている。図5に示すように、凹部は堤部の幅方向に2つ設けた構成であり、これら凹部が各辺に複数形成された構成である。 The metal brazing part 41 has a large number of recesses 411 formed therein. The concave portion 411 is configured to penetrate both the upper wax portion 41c and the second lower wax portion 41b, and has a concave configuration in which a large number of bottomed small holes are formed as a whole. As shown in FIG. 5, two recesses are provided in the width direction of the bank portion, and a plurality of these recesses are formed on each side.

なお、これら凹部の構造および配置は一例であり、この例に限定されるものではない。例えば、凹部が平面視円形または楕円形であってもよい。この場合、軟化または溶融した錫または錫合金の凹部への流れ込みがスムースになり、高融点領域の形成を促進することができる。 In addition, the structure and arrangement | positioning of these recessed parts are examples, and are not limited to this example. For example, the concave portion may be circular or elliptical in plan view. In this case, the flow of softened or melted tin or tin alloy into the recesses becomes smooth, and the formation of the high melting point region can be promoted.

ベースに電子部品素子(水晶振動板)を搭載した後、前記ベースの金属ろう部にリッドを搭載し、ベースの開口部を塞ぐ。そして、ベース1とリッド3とを前記金属ろう部で加熱接合することにより、内部に収納された水晶振動板2が気密収納される。内部の雰囲気は窒素ガス等の不活性ガスや真空雰囲気が用いられるが、本実施の形態では真空雰囲気を用いている。なお、リッドにはベースとの接合領域に錫や錫銅合金を形成してもよい。この場合、ベースに形成された上ろう部は割愛してもよい。 After mounting an electronic component element (quartz diaphragm) on the base, a lid is mounted on the metal brazing portion of the base to close the opening of the base. Then, the base 1 and the lid 3 are heat-bonded by the metal brazing portion, whereby the quartz crystal diaphragm 2 housed therein is hermetically housed. As the internal atmosphere, an inert gas such as nitrogen gas or a vacuum atmosphere is used. In this embodiment, a vacuum atmosphere is used. In addition, you may form tin or a tin copper alloy in a joining area | region with a base in a lid. In this case, the upper wax part formed on the base may be omitted.

気密接合後においては、金属ろう部は平面で見て低融点領域および高融点領域が形成された構成としている。ただし前記各領域は錫銅合金の共晶温度より高い融点を有している。これにより金属ろう部の耐熱性が全体として向上することにより、電子部品用パッケージの気密封止性を向上させ、特性の安定な電子部品を得るためのリッドおよび電子部品用パッケージを得ることができる。 After the hermetic joining, the metal brazing portion has a structure in which a low melting point region and a high melting point region are formed in a plan view. However, each said area | region has melting | fusing point higher than the eutectic temperature of a tin copper alloy. As a result, the heat resistance of the metal brazing portion is improved as a whole, thereby improving the hermetic sealing property of the electronic component package and obtaining a lid and an electronic component package for obtaining an electronic component having stable characteristics. .

本発明による第3の実施の形態を図6乃至図8とともに説明する。図6に示すようにリッド5は平面視矩形状であり、多層の金属材料からなる構成で、コア部の表面に金属ろう部51が形成された構成である。コア部はコバール材(鉄ニッケルコバルト合金)からなり、当該コア部のベース1との接合面にはリッドの外周近傍に沿って周状の金属ろう部51が形成されている。なおコア部の金属ろう部51を形成した反対面にニッケル層を形成してもよい。 A third embodiment according to the present invention will be described with reference to FIGS. As shown in FIG. 6, the lid 5 has a rectangular shape in plan view, and is composed of a multilayer metal material, and has a structure in which a metal brazing part 51 is formed on the surface of the core part. The core portion is made of Kovar material (iron-nickel-cobalt alloy), and a circumferential metal brazing portion 51 is formed along the vicinity of the outer periphery of the lid on the joint surface with the base 1 of the core portion. In addition, you may form a nickel layer in the opposite surface in which the metal brazing part 51 of the core part was formed.

図7に示すように金属ろう部51は下ろう部51aと上ろう部51bとからなる。下ろう部51aはコア部50に接して形成され、また上ろう部51bは下ろう部51aの上部に形成されている。下ろう部51aは錫との合金を形成する金属である銅からなり、上ろう部51bは錫合金である錫銅共晶合金からなる。 As shown in FIG. 7, the metal brazing part 51 includes a lower brazing part 51a and an upper brazing part 51b. The lower wax part 51a is formed in contact with the core part 50, and the upper wax part 51b is formed on the upper part of the lower wax part 51a. The lower brazing portion 51a is made of copper, which is a metal that forms an alloy with tin, and the upper brazing portion 51b is made of a tin-copper eutectic alloy, which is a tin alloy.

下ろう部51aは薄肉部51aaと厚肉部51abを有する構成であり、薄肉部51aaはリッドの最外周部分に形成され、厚肉部51abは薄肉部51aaの内側に続いて形成されている。上ろう部51bは下ろう部51a上に均一な膜厚で形成されている。これによりリッドの最外周部分において金属ろう部51が薄肉化された段差部51baが形成されている。 The lower brazing part 51a has a thin part 51aa and a thick part 51ab. The thin part 51aa is formed at the outermost peripheral part of the lid, and the thick part 51ab is formed inside the thin part 51aa. The upper brazing part 51b is formed with a uniform film thickness on the lower brazing part 51a. Thereby, a stepped portion 51ba in which the metal brazing portion 51 is thinned is formed in the outermost peripheral portion of the lid.

また図8に示すように、リッド6の外周に薄肉部6aを形成した構成であってもよい。薄肉部6aとその一部内側の表面には金属ろう部61が形成されている。金属ろう部61は下ろう部61aと上ろう部61bが形成されているが、いずれも均一な厚さを有しており、薄肉部6aの薄さ分の段差部61baが形成されている。 Moreover, as shown in FIG. 8, the structure which formed the thin part 6a in the outer periphery of the lid 6 may be sufficient. A metal brazing part 61 is formed on the thin-walled part 6a and a partly inner surface thereof. The metal brazing portion 61 has a lower brazing portion 61a and an upper brazing portion 61b, both of which have a uniform thickness, and a stepped portion 61ba corresponding to the thickness of the thin portion 6a is formed.

上記実施の形態では、凹部の構成が複数の小孔や最外周が薄肉化された構成を示したが、これら構成に限定されるものではなく、例えば図9乃至図12に示す構成であってもよい。図9に示す構成は、金属ろう部7に対して凹部71が帯状に延びて形成された構成であり、外周部分から対向辺近傍まで一辺側から他辺側、他辺側から一辺側に相互に延びる構成である。図10に示す構成は、金属ろう部7に対して凹部72が帯状に延びて形成された構成であり、外周部分から対向辺まで複数延びた構成である。   In the above embodiment, the configuration of the concave portion is a configuration in which the plurality of small holes and the outermost periphery are thinned. However, the configuration is not limited to these configurations, for example, the configuration shown in FIGS. 9 to 12. Also good. The configuration shown in FIG. 9 is a configuration in which a recess 71 is formed in a strip shape with respect to the metal brazing portion 7, and from the outer peripheral portion to the vicinity of the opposite side, from one side to the other side, and from the other side to the one side. It is the structure extended to. The configuration shown in FIG. 10 is a configuration in which the concave portions 72 are formed in a band shape with respect to the metal brazing portion 7, and a plurality of configurations are extended from the outer peripheral portion to the opposite side.

図11に示す構成は、金属ろう部7に対して平面視円形の凹部73が多数個分散配置された構成である。図12に示す構成は、金属ろう部7に対して平面視楕円形の凹部74が多数個分散配置され、かつこれら凹部が帯状の連結部74aで連結された構成である。連結部によりろう材の流れ込みがスムースになり、低融点領域と高融点領域を形成しやすくなる。   The configuration shown in FIG. 11 is a configuration in which a large number of circular recesses 73 in a plan view are dispersedly arranged with respect to the metal brazing portion 7. The configuration shown in FIG. 12 is a configuration in which a large number of elliptical recesses 74 in a plan view are dispersedly arranged with respect to the metal brazing part 7 and these recesses are connected by a strip-like connection part 74a. The connecting portion makes the flow of the brazing material smooth and facilitates formation of the low melting point region and the high melting point region.

なお、本発明は、その精神や主旨または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

電子部品用パッケージの量産に適用できる。   Applicable for mass production of electronic component packages.

1 ベース
10 底部
11 堤部
2 水晶振動板(圧電振動板)
3、5 リッド
31,51,7 金属ろう部
311,71,72,73,74 凹部
DESCRIPTION OF SYMBOLS 1 Base 10 Bottom part 11 Bank part 2 Crystal diaphragm (piezoelectric diaphragm)
3, 5 Lid 31, 51, 7 Metal brazing part 311, 71, 72, 73, 74 Recess

Claims (6)

開口部と当該開口部につながる電子部品素子収納部を有するベースの前記開口部を気密封止するリッドであって、
少なくとも前記開口部と接合される接合領域に金属ろう部が形成され、当該金属ろう部は錫と他の金属を有する構成で、リッドのコア部に前記他の金属からなる下ろう部を形成し、その上面に錫または錫と他の金属からなる錫合金を有する上ろう部を形成するとともに、前記金属ろう部の一部に凹部が形成されていることを特徴とするリッド。
A lid that hermetically seals the opening of the base having an opening and an electronic component element storage portion connected to the opening;
A metal brazing portion is formed at least in a joining region to be joined to the opening, and the metal brazing portion includes tin and another metal, and a lower brazing portion made of the other metal is formed in the core portion of the lid. A lid characterized in that an upper brazing portion having tin or a tin alloy made of tin and another metal is formed on the upper surface, and a concave portion is formed in a part of the metal brazing portion.
前記金属ろう部に形成された凹部は、上ろう部においては厚さ方向に貫通し、下ろう部においては有底の構成であることを特徴とする請求項1記載のリッド。 The lid according to claim 1, wherein the concave portion formed in the metal brazing portion penetrates in the thickness direction at the upper brazing portion and has a bottomed structure at the lower brazing portion. 前記金属ろう部に形成された凹部は複数の小孔からなり、金属ろう部の一部または全部に分散配置されていることを特徴とする請求項1または2に記載のリッド。 3. The lid according to claim 1, wherein the concave portion formed in the metal brazing portion is composed of a plurality of small holes and is dispersedly arranged in part or all of the metal brazing portion. 前記金属ろう部に形成された凹部がリッドの最外周領域において周状に形成されたことを特徴とする請求項1乃至3のいずれかに記載のリッド。 The lid according to any one of claims 1 to 3, wherein the concave portion formed in the metal brazing portion is formed in a circumferential shape in an outermost peripheral region of the lid. リッドにより気密接合される周状の堤部と当該堤部により形成される電子部品素子収納部を有するベースであって、
前記リッドと接合される堤部の上面に金属ろう部が形成され、当該金属ろう部は錫と他の金属を有する構成で、堤部上面に前記他の金属からなる下ろう部を形成し、その上面に錫または錫と他の金属からなる錫合金を有する上ろう部を形成するとともに、前記金属ろう部の一部に凹部が形成されていることを特徴とするベース。
A base having a circumferential bank portion hermetically joined by a lid and an electronic component element housing portion formed by the bank portion,
A metal brazing portion is formed on the upper surface of the bank portion to be joined to the lid, the metal brazing portion is configured to have tin and another metal, and a lower brazing portion made of the other metal is formed on the upper surface of the bank portion, A base characterized in that an upper brazing part having tin or a tin alloy made of tin and another metal is formed on the upper surface, and a concave part is formed in a part of the metallic brazing part.
請求項1乃至4のいずれかに記載のリッドと、開口部と当該開口部につながる電子部品素子収納部を有するベースと、からなる電子部品用パッケージであって、前記ベースの開口部をリッドで気密封止したことを特徴とする電子部品用パッケージ。 An electronic component package comprising the lid according to any one of claims 1 to 4 and a base having an opening and an electronic component element storage portion connected to the opening, wherein the opening of the base is a lid. An electronic component package characterized by being hermetically sealed.
JP2010094269A 2010-04-15 2010-04-15 Lid, base and package for electronic component Pending JP2011228352A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3071354A1 (en) * 2017-09-18 2019-03-22 Stmicroelectronics (Grenoble 2) Sas ELECTRONIC DEVICE COMPRISING A SUPPORT SUBSTRATE AND AN ENCAPSULATION COVER OF AN ELECTRONIC COMPONENT
WO2023017743A1 (en) * 2021-08-12 2023-02-16 株式会社大真空 Piezoelectric vibration device and method for manufacturing piezoelectric vibration device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3071354A1 (en) * 2017-09-18 2019-03-22 Stmicroelectronics (Grenoble 2) Sas ELECTRONIC DEVICE COMPRISING A SUPPORT SUBSTRATE AND AN ENCAPSULATION COVER OF AN ELECTRONIC COMPONENT
US10600704B2 (en) 2017-09-18 2020-03-24 Stmicroelectronics (Grenoble 2) Sas Electronic device comprising a support substrate and an encapsulating cover for an electronic component
US10892201B2 (en) 2017-09-18 2021-01-12 Stmicroelectronics (Grenoble 2) Sas Electronic device comprising a support substrate and an encapsulating cover for an electronic component
WO2023017743A1 (en) * 2021-08-12 2023-02-16 株式会社大真空 Piezoelectric vibration device and method for manufacturing piezoelectric vibration device

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