JP2010267368A5 - - Google Patents

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Publication number
JP2010267368A5
JP2010267368A5 JP2010091039A JP2010091039A JP2010267368A5 JP 2010267368 A5 JP2010267368 A5 JP 2010267368A5 JP 2010091039 A JP2010091039 A JP 2010091039A JP 2010091039 A JP2010091039 A JP 2010091039A JP 2010267368 A5 JP2010267368 A5 JP 2010267368A5
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JP
Japan
Prior art keywords
electrode
memory element
circuit
booster circuit
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010091039A
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English (en)
Japanese (ja)
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JP2010267368A (ja
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Publication date
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Priority to JP2010091039A priority Critical patent/JP2010267368A/ja
Priority claimed from JP2010091039A external-priority patent/JP2010267368A/ja
Publication of JP2010267368A publication Critical patent/JP2010267368A/ja
Publication of JP2010267368A5 publication Critical patent/JP2010267368A5/ja
Withdrawn legal-status Critical Current

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JP2010091039A 2009-04-17 2010-04-12 半導体記憶装置 Withdrawn JP2010267368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010091039A JP2010267368A (ja) 2009-04-17 2010-04-12 半導体記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009100811 2009-04-17
JP2010091039A JP2010267368A (ja) 2009-04-17 2010-04-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2010267368A JP2010267368A (ja) 2010-11-25
JP2010267368A5 true JP2010267368A5 (enExample) 2013-05-16

Family

ID=42980871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010091039A Withdrawn JP2010267368A (ja) 2009-04-17 2010-04-12 半導体記憶装置

Country Status (2)

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US (1) US8964489B2 (enExample)
JP (1) JP2010267368A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8659015B2 (en) * 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN113793628B (zh) 2012-12-27 2024-06-07 英特尔公司 电平移位器
KR102469151B1 (ko) * 2017-06-26 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
JP7185573B2 (ja) * 2019-03-22 2022-12-07 タワー パートナーズ セミコンダクター株式会社 半導体装置
US11183258B1 (en) * 2020-12-07 2021-11-23 Semiconductor Components Industries, Llc Circuit and method for programming a one-time programmable memory
JP7781010B2 (ja) * 2022-03-30 2025-12-05 キヤノン株式会社 記憶装置、液体吐出ヘッドおよび液体吐出装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818082A (en) 1988-05-27 1989-04-04 Eastman Kodak Company Compact wide-angle close-focus SLR zoom lens
JPH0223653A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 集積回路
JP2568442B2 (ja) * 1989-07-14 1997-01-08 セイコー電子工業株式会社 半導体集積回路装置
US5422842A (en) * 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
US5418751A (en) * 1993-09-29 1995-05-23 Texas Instruments Incorporated Variable frequency oscillator controlled EEPROM charge pump
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US5684741A (en) * 1995-12-26 1997-11-04 Intel Corporation Auto-verification of programming flash memory cells
DE69721252D1 (de) * 1997-09-29 2003-05-28 St Microelectronics Srl Verfahren und Vorrichtung zum analogen Programmieren einer Flash-EEPROM-Speicherzelle mit Selbstprüfung
KR100327421B1 (ko) * 1997-12-31 2002-07-27 주식회사 하이닉스반도체 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법
JP4231572B2 (ja) * 1998-07-07 2009-03-04 沖電気工業株式会社 電圧監視回路及びそれを内蔵したメモリカード
JP2001344981A (ja) * 2000-06-05 2001-12-14 Hitachi Ltd 不揮発性半導体記憶装置
US6434060B1 (en) * 2001-07-31 2002-08-13 Hewlett-Packard Company Write pulse limiting for worm storage device
JP2003088103A (ja) 2001-09-17 2003-03-20 Nec Microsystems Ltd チャージポンプ方式電源回路
JP4222768B2 (ja) * 2002-03-27 2009-02-12 三洋電機株式会社 昇圧装置及びこれを用いた撮像装置
JP2004146082A (ja) * 2002-10-21 2004-05-20 Semiconductor Energy Lab Co Ltd 表示装置
US6940744B2 (en) * 2002-10-31 2005-09-06 Unity Semiconductor Corporation Adaptive programming technique for a re-writable conductive memory device
JP4772328B2 (ja) * 2005-01-13 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
JP2008004038A (ja) * 2006-06-26 2008-01-10 Ricoh Co Ltd ボルテージレギュレータ
WO2008044559A1 (en) * 2006-10-02 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102646681B (zh) 2006-10-04 2015-08-05 株式会社半导体能源研究所 半导体器件
JP5361176B2 (ja) * 2006-12-13 2013-12-04 株式会社半導体エネルギー研究所 半導体装置
JP5137545B2 (ja) * 2006-12-25 2013-02-06 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
US7477092B2 (en) * 2006-12-29 2009-01-13 Sandisk Corporation Unified voltage generation apparatus with improved power efficiency
JP5324161B2 (ja) * 2007-08-30 2013-10-23 株式会社半導体エネルギー研究所 半導体装置
US8238158B2 (en) * 2010-08-04 2012-08-07 Texas Instruments Incorporated Programming of memory cells in a nonvolatile memory using an active transition control

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