JP2010263251A - 発光素子およびその製造方法 - Google Patents
発光素子およびその製造方法 Download PDFInfo
- Publication number
- JP2010263251A JP2010263251A JP2010187845A JP2010187845A JP2010263251A JP 2010263251 A JP2010263251 A JP 2010263251A JP 2010187845 A JP2010187845 A JP 2010187845A JP 2010187845 A JP2010187845 A JP 2010187845A JP 2010263251 A JP2010263251 A JP 2010263251A
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- Prior art keywords
- layer
- light
- nitride
- based semiconductor
- semiconductor element
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 256
- 150000004767 nitrides Chemical class 0.000 claims abstract description 185
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 36
- 239000010410 layer Substances 0.000 description 585
- 230000005540 biological transmission Effects 0.000 description 59
- 238000000034 method Methods 0.000 description 50
- 229910004298 SiO 2 Inorganic materials 0.000 description 44
- 238000005253 cladding Methods 0.000 description 42
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 238000002955 isolation Methods 0.000 description 14
- 239000010419 fine particle Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000001771 vacuum deposition Methods 0.000 description 9
- 230000001154 acute effect Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010187845A JP2010263251A (ja) | 2010-08-25 | 2010-08-25 | 発光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010187845A JP2010263251A (ja) | 2010-08-25 | 2010-08-25 | 発光素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004065489A Division JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013226664A Division JP2014042062A (ja) | 2013-10-31 | 2013-10-31 | 発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010263251A true JP2010263251A (ja) | 2010-11-18 |
| JP2010263251A5 JP2010263251A5 (https=) | 2011-06-02 |
Family
ID=43361024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010187845A Pending JP2010263251A (ja) | 2010-08-25 | 2010-08-25 | 発光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010263251A (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8686398B2 (en) | 2012-03-02 | 2014-04-01 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| JP2014533890A (ja) * | 2011-11-18 | 2014-12-15 | ルクスビュー テクノロジー コーポレイション | 電気的絶縁層を持つマイクロｌｅｄ構造体及びマイクロｌｅｄ構造体のアレイの形成方法 |
| JP2015500562A (ja) * | 2011-11-18 | 2015-01-05 | ルクスビュー テクノロジー コーポレイション | マイクロ発光ダイオード |
| US9463613B2 (en) | 2011-11-18 | 2016-10-11 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190973A (ja) * | 1992-01-14 | 1993-07-30 | Toshiba Corp | 半導体レーザ用サブマウント |
| JPH11214749A (ja) * | 1998-01-29 | 1999-08-06 | Sanyo Electric Co Ltd | 半導体発光装置 |
| JP2003258360A (ja) * | 2002-03-06 | 2003-09-12 | Sumitomo Electric Ind Ltd | サブマウントおよび半導体装置 |
| JP2003532298A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
-
2010
- 2010-08-25 JP JP2010187845A patent/JP2010263251A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190973A (ja) * | 1992-01-14 | 1993-07-30 | Toshiba Corp | 半導体レーザ用サブマウント |
| JPH11214749A (ja) * | 1998-01-29 | 1999-08-06 | Sanyo Electric Co Ltd | 半導体発光装置 |
| JP2003532298A (ja) * | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
| JP2003258360A (ja) * | 2002-03-06 | 2003-09-12 | Sumitomo Electric Ind Ltd | サブマウントおよび半導体装置 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014533890A (ja) * | 2011-11-18 | 2014-12-15 | ルクスビュー テクノロジー コーポレイション | 電気的絶縁層を持つマイクロｌｅｄ構造体及びマイクロｌｅｄ構造体のアレイの形成方法 |
| JP2015500562A (ja) * | 2011-11-18 | 2015-01-05 | ルクスビュー テクノロジー コーポレイション | マイクロ発光ダイオード |
| US9463613B2 (en) | 2011-11-18 | 2016-10-11 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
| US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
| US10607961B2 (en) | 2011-11-18 | 2020-03-31 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US11552046B2 (en) | 2011-11-18 | 2023-01-10 | Apple Inc. | Micro device transfer head assembly |
| US12243955B2 (en) | 2011-11-18 | 2025-03-04 | Apple Inc. | Display and micro device array for transfer to a display substrate |
| US8686398B2 (en) | 2012-03-02 | 2014-04-01 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
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