JP2010199569A - Ｓｉｍｏｘウェーハの製造方法 - Google Patents
Ｓｉｍｏｘウェーハの製造方法 Download PDFInfo
- Publication number
- JP2010199569A JP2010199569A JP2010015046A JP2010015046A JP2010199569A JP 2010199569 A JP2010199569 A JP 2010199569A JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010199569 A JP2010199569 A JP 2010199569A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heating fluid
- holding means
- wafer holding
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 75
- 239000012530 fluid Substances 0.000 claims abstract description 60
- 238000005468 ion implantation Methods 0.000 claims abstract description 51
- 239000001301 oxygen Substances 0.000 claims abstract description 47
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- -1 oxygen ion Chemical class 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 148
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- MHCVCKDNQYMGEX-UHFFFAOYSA-N 1,1'-biphenyl;phenoxybenzene Chemical compound C1=CC=CC=C1C1=CC=CC=C1.C=1C=CC=CC=1OC1=CC=CC=C1 MHCVCKDNQYMGEX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010015046A JP2010199569A (ja) | 2009-02-02 | 2010-01-27 | Ｓｉｍｏｘウェーハの製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009021421 | 2009-02-02 | ||
| JP2010015046A JP2010199569A (ja) | 2009-02-02 | 2010-01-27 | Ｓｉｍｏｘウェーハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010199569A true JP2010199569A (ja) | 2010-09-09 |
| JP2010199569A5 JP2010199569A5 (enExample) | 2013-03-07 |
Family
ID=42398029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010015046A Withdrawn JP2010199569A (ja) | 2009-02-02 | 2010-01-27 | Ｓｉｍｏｘウェーハの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8153450B2 (enExample) |
| JP (1) | JP2010199569A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5151651B2 (ja) * | 2008-04-22 | 2013-02-27 | 株式会社Ｓｕｍｃｏ | 酸素イオン注入装置 |
| JP2011029618A (ja) | 2009-06-25 | 2011-02-10 | Sumco Corp | Ｓｉｍｏｘウェーハの製造方法、ｓｉｍｏｘウェーハ |
| US9490185B2 (en) * | 2012-08-31 | 2016-11-08 | Axcelis Technologies, Inc. | Implant-induced damage control in ion implantation |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3003088B2 (ja) * | 1994-06-10 | 2000-01-24 | 住友イートンノバ株式会社 | イオン注入装置 |
| JPH0927462A (ja) | 1995-07-07 | 1997-01-28 | Tel Varian Ltd | イオン注入方法およびその装置 |
| US5930643A (en) | 1997-12-22 | 1999-07-27 | International Business Machines Corporation | Defect induced buried oxide (DIBOX) for throughput SOI |
| US6614190B2 (en) * | 2001-01-31 | 2003-09-02 | Hitachi, Ltd. | Ion implanter |
| US6794662B1 (en) | 2003-10-07 | 2004-09-21 | Ibis Technology Corporation | Thermosetting resin wafer-holding pin |
| JP2007005563A (ja) | 2005-06-23 | 2007-01-11 | Sumco Corp | Ｓｉｍｏｘウェーハの製造方法 |
| WO2007010619A1 (ja) | 2005-07-22 | 2007-01-25 | Sumco Corporation | Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ |
| JP4795755B2 (ja) | 2005-08-25 | 2011-10-19 | 株式会社日立ハイテクノロジーズ | 半導体基板の製造装置 |
| EP1953802A3 (en) * | 2007-02-01 | 2012-05-23 | Parker-Hannifin Corporation | Semiconductor process chamber |
| JP2009054837A (ja) | 2007-08-28 | 2009-03-12 | Sumco Corp | Ｓｉｍｏｘウェーハ製造方法およびｓｉｍｏｘウェーハ |
-
2010
- 2010-01-27 JP JP2010015046A patent/JP2010199569A/ja not_active Withdrawn
- 2010-01-28 US US12/695,301 patent/US8153450B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8153450B2 (en) | 2012-04-10 |
| US20100197047A1 (en) | 2010-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130118 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130118 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20131125 |