JP2010199569A5 - - Google Patents

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Publication number
JP2010199569A5
JP2010199569A5 JP2010015046A JP2010015046A JP2010199569A5 JP 2010199569 A5 JP2010199569 A5 JP 2010199569A5 JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010015046 A JP2010015046 A JP 2010015046A JP 2010199569 A5 JP2010199569 A5 JP 2010199569A5
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JP
Japan
Prior art keywords
wafer
heating fluid
wafer holding
holding means
side end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010015046A
Other languages
English (en)
Japanese (ja)
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JP2010199569A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010015046A priority Critical patent/JP2010199569A/ja
Priority claimed from JP2010015046A external-priority patent/JP2010199569A/ja
Publication of JP2010199569A publication Critical patent/JP2010199569A/ja
Publication of JP2010199569A5 publication Critical patent/JP2010199569A5/ja
Withdrawn legal-status Critical Current

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JP2010015046A 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法 Withdrawn JP2010199569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010015046A JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009021421 2009-02-02
JP2010015046A JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Publications (2)

Publication Number Publication Date
JP2010199569A JP2010199569A (ja) 2010-09-09
JP2010199569A5 true JP2010199569A5 (enExample) 2013-03-07

Family

ID=42398029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010015046A Withdrawn JP2010199569A (ja) 2009-02-02 2010-01-27 Ｓｉｍｏｘウェーハの製造方法

Country Status (2)

Country Link
US (1) US8153450B2 (enExample)
JP (1) JP2010199569A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151651B2 (ja) * 2008-04-22 2013-02-27 株式会社Ｓｕｍｃｏ 酸素イオン注入装置
JP2011029618A (ja) 2009-06-25 2011-02-10 Sumco Corp Ｓｉｍｏｘウェーハの製造方法、ｓｉｍｏｘウェーハ
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JPH0927462A (ja) 1995-07-07 1997-01-28 Tel Varian Ltd イオン注入方法およびその装置
US5930643A (en) 1997-12-22 1999-07-27 International Business Machines Corporation Defect induced buried oxide (DIBOX) for throughput SOI
US6614190B2 (en) * 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
US6794662B1 (en) 2003-10-07 2004-09-21 Ibis Technology Corporation Thermosetting resin wafer-holding pin
JP2007005563A (ja) 2005-06-23 2007-01-11 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
WO2007010619A1 (ja) 2005-07-22 2007-01-25 Sumco Corporation Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ
JP4795755B2 (ja) 2005-08-25 2011-10-19 株式会社日立ハイテクノロジーズ 半導体基板の製造装置
EP1953802A3 (en) * 2007-02-01 2012-05-23 Parker-Hannifin Corporation Semiconductor process chamber
JP2009054837A (ja) 2007-08-28 2009-03-12 Sumco Corp Ｓｉｍｏｘウェーハ製造方法およびｓｉｍｏｘウェーハ

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