JP2010181288A - 半導体集積回路の解析装置及び解析方法 - Google Patents

半導体集積回路の解析装置及び解析方法 Download PDF

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Publication number
JP2010181288A
JP2010181288A JP2009025308A JP2009025308A JP2010181288A JP 2010181288 A JP2010181288 A JP 2010181288A JP 2009025308 A JP2009025308 A JP 2009025308A JP 2009025308 A JP2009025308 A JP 2009025308A JP 2010181288 A JP2010181288 A JP 2010181288A
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integrated circuit
semiconductor integrated
laser
field
circuit analysis
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JP2010181288A5 (enExample
Inventor
Kiyoshi Futagawa
清 二川
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2009025308A 2009-02-05 2009-02-05 半導体集積回路の解析装置及び解析方法 Pending JP2010181288A (ja)

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JP2010181288A true JP2010181288A (ja) 2010-08-19
JP2010181288A5 JP2010181288A5 (enExample) 2012-03-15

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058247A (ja) * 2010-09-08 2012-03-22 Dcg Systems Inc ２フォトン吸収を用いたレーザ・アシステッド・デバイス・オルタレーション
WO2013046534A1 (ja) * 2011-09-30 2013-04-04 ソニー株式会社 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
US9201096B2 (en) 2010-09-08 2015-12-01 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses
US9733297B2 (en) 2013-02-19 2017-08-15 Hamamatsu Photonics K.K. Electric field concentration location observation device and electric field concentration location observation method
US10191111B2 (en) 2013-03-24 2019-01-29 Dcg Systems, Inc. Synchronized pulsed LADA for the simultaneous acquisition of timing diagrams and laser-induced upsets
WO2022191958A1 (en) * 2021-03-12 2022-09-15 Battelle Memorial Institute Systems and methods for backside optical carrier injection into microelectronic devices
JP2024522595A (ja) * 2021-06-08 2024-06-21 バテル メモリアル インスティチュート 微小電子デバイスの高分解能結像

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10332794A (ja) * 1997-05-15 1998-12-18 Lucent Technol Inc 半導体デバイスの画像化方法
JP2004020404A (ja) * 2002-06-18 2004-01-22 Hitachi Ltd 半導体デバイスの計測または観察方法およびその装置
JP2006214950A (ja) * 2005-02-07 2006-08-17 Matsushita Electric Ind Co Ltd 半導体チップ並びにその検査装置および検査方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10332794A (ja) * 1997-05-15 1998-12-18 Lucent Technol Inc 半導体デバイスの画像化方法
JP2004020404A (ja) * 2002-06-18 2004-01-22 Hitachi Ltd 半導体デバイスの計測または観察方法およびその装置
JP2006214950A (ja) * 2005-02-07 2006-08-17 Matsushita Electric Ind Co Ltd 半導体チップ並びにその検査装置および検査方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058247A (ja) * 2010-09-08 2012-03-22 Dcg Systems Inc ２フォトン吸収を用いたレーザ・アシステッド・デバイス・オルタレーション
US9201096B2 (en) 2010-09-08 2015-12-01 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses
US11353479B2 (en) 2010-09-08 2022-06-07 Fei Efa, Inc. Laser-assisted device alteration using synchronized laser pulses
US10209274B2 (en) 2010-09-08 2019-02-19 Fei Efa, Inc. Laser-assisted device alteration using synchronized laser pulses
WO2013046534A1 (ja) * 2011-09-30 2013-04-04 ソニー株式会社 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
CN103797355A (zh) * 2011-09-30 2014-05-14 索尼公司 光传导元件、透镜、太赫兹发射显微镜及器件制造方法
US9146390B2 (en) 2011-09-30 2015-09-29 Sony Corporation Photoconductive element, lens, terahertz emission microscope and method of producing device
US9733297B2 (en) 2013-02-19 2017-08-15 Hamamatsu Photonics K.K. Electric field concentration location observation device and electric field concentration location observation method
US11047906B2 (en) 2013-03-24 2021-06-29 Dcg Systems, Inc. Synchronized pulsed LADA for the simultaneous acquisition of timing diagrams and laser-induced upsets
US10191111B2 (en) 2013-03-24 2019-01-29 Dcg Systems, Inc. Synchronized pulsed LADA for the simultaneous acquisition of timing diagrams and laser-induced upsets
WO2022191958A1 (en) * 2021-03-12 2022-09-15 Battelle Memorial Institute Systems and methods for backside optical carrier injection into microelectronic devices
US11899060B2 (en) 2021-03-12 2024-02-13 Battelle Memorial Institute Systems and methods for precise signal injection into microelectronic devices
US12339317B2 (en) 2021-03-12 2025-06-24 Battelle Memorial Institute Systems and methods for precise signal injection into microelectronic devices
JP2024522595A (ja) * 2021-06-08 2024-06-21 バテル メモリアル インスティチュート 微小電子デバイスの高分解能結像
US12315105B2 (en) 2021-06-08 2025-05-27 Battelle Memorial Institute High resolution imaging of microelectronic devices
JP7729922B2 (ja) 2021-06-08 2025-08-26 バテル メモリアル インスティチュート 微小電子デバイスの高分解能結像

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