JP2010157535A5 - - Google Patents
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- Publication number
- JP2010157535A5 JP2010157535A5 JP2008333510A JP2008333510A JP2010157535A5 JP 2010157535 A5 JP2010157535 A5 JP 2010157535A5 JP 2008333510 A JP2008333510 A JP 2008333510A JP 2008333510 A JP2008333510 A JP 2008333510A JP 2010157535 A5 JP2010157535 A5 JP 2010157535A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- carrier
- bonding region
- thermal resistance
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 50
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008333510A JP5388566B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体レーザ装置 |
| PCT/JP2009/071266 WO2010074044A1 (ja) | 2008-12-26 | 2009-12-22 | 半導体レーザ装置 |
| US13/051,274 US20110164634A1 (en) | 2008-12-26 | 2011-03-18 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008333510A JP5388566B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010157535A JP2010157535A (ja) | 2010-07-15 |
| JP2010157535A5 true JP2010157535A5 (enExample) | 2011-12-08 |
| JP5388566B2 JP5388566B2 (ja) | 2014-01-15 |
Family
ID=42287653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008333510A Expired - Fee Related JP5388566B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体レーザ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20110164634A1 (enExample) |
| JP (1) | JP5388566B2 (enExample) |
| WO (1) | WO2010074044A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6940750B2 (ja) * | 2017-04-28 | 2021-09-29 | 日亜化学工業株式会社 | レーザ装置 |
| JP7590889B2 (ja) * | 2021-02-24 | 2024-11-27 | 浜松ホトニクス株式会社 | 外部共振型レーザモジュール、及び外部共振型レーザモジュールの製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5223741A (en) * | 1989-09-01 | 1993-06-29 | Tactical Fabs, Inc. | Package for an integrated circuit structure |
| JP2002094168A (ja) * | 2000-09-19 | 2002-03-29 | Toshiba Corp | 半導体レーザ装置及びその製造方法 |
| US6760352B2 (en) * | 2001-09-19 | 2004-07-06 | The Furukawa Electric Co., Ltd. | Semiconductor laser device with a diffraction grating and semiconductor laser module |
| JP2004327608A (ja) * | 2003-04-23 | 2004-11-18 | Sharp Corp | サブマウント、レーザモジュール、光学装置、半導体レーザ装置およびその製造方法 |
| JP2006269846A (ja) * | 2005-03-25 | 2006-10-05 | Anritsu Corp | サブマウント及びそれを用いた光半導体装置 |
| JP4772560B2 (ja) * | 2006-03-31 | 2011-09-14 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置、およびその制御方法 |
-
2008
- 2008-12-26 JP JP2008333510A patent/JP5388566B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-22 WO PCT/JP2009/071266 patent/WO2010074044A1/ja not_active Ceased
-
2011
- 2011-03-18 US US13/051,274 patent/US20110164634A1/en not_active Abandoned
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