JP2015095545A5 - - Google Patents

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Publication number
JP2015095545A5
JP2015095545A5 JP2013233902A JP2013233902A JP2015095545A5 JP 2015095545 A5 JP2015095545 A5 JP 2015095545A5 JP 2013233902 A JP2013233902 A JP 2013233902A JP 2013233902 A JP2013233902 A JP 2013233902A JP 2015095545 A5 JP2015095545 A5 JP 2015095545A5
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JP
Japan
Prior art keywords
groove
semiconductor element
conductor
metal plate
junction region
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Application number
JP2013233902A
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English (en)
Japanese (ja)
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JP2015095545A (ja
JP6072667B2 (ja
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Priority to JP2013233902A priority Critical patent/JP6072667B2/ja
Priority claimed from JP2013233902A external-priority patent/JP6072667B2/ja
Priority to US14/445,411 priority patent/US9698078B2/en
Priority to DE102014221636.2A priority patent/DE102014221636B4/de
Priority to CN201410645842.2A priority patent/CN104637910B/zh
Publication of JP2015095545A publication Critical patent/JP2015095545A/ja
Publication of JP2015095545A5 publication Critical patent/JP2015095545A5/ja
Application granted granted Critical
Publication of JP6072667B2 publication Critical patent/JP6072667B2/ja
Active legal-status Critical Current
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JP2013233902A 2013-11-12 2013-11-12 半導体モジュールとその製造方法 Active JP6072667B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013233902A JP6072667B2 (ja) 2013-11-12 2013-11-12 半導体モジュールとその製造方法
US14/445,411 US9698078B2 (en) 2013-11-12 2014-07-29 Semiconductor module and method for manufacturing the same
DE102014221636.2A DE102014221636B4 (de) 2013-11-12 2014-10-24 Halbleitermodul und Verfahren zum Herstellen desselben
CN201410645842.2A CN104637910B (zh) 2013-11-12 2014-11-12 半导体模块和其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013233902A JP6072667B2 (ja) 2013-11-12 2013-11-12 半導体モジュールとその製造方法

Publications (3)

Publication Number Publication Date
JP2015095545A JP2015095545A (ja) 2015-05-18
JP2015095545A5 true JP2015095545A5 (enExample) 2016-02-18
JP6072667B2 JP6072667B2 (ja) 2017-02-01

Family

ID=52991095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013233902A Active JP6072667B2 (ja) 2013-11-12 2013-11-12 半導体モジュールとその製造方法

Country Status (4)

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US (1) US9698078B2 (enExample)
JP (1) JP6072667B2 (enExample)
CN (1) CN104637910B (enExample)
DE (1) DE102014221636B4 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6721329B2 (ja) * 2015-12-21 2020-07-15 三菱電機株式会社 パワー半導体装置およびその製造方法
DE102016118784A1 (de) 2016-10-04 2018-04-05 Infineon Technologies Ag Chipträger, konfiguriert zur delaminierungsfreien Kapselung und stabilen Sinterung
JP6647190B2 (ja) * 2016-11-28 2020-02-14 三菱電機株式会社 半導体装置およびその製造方法
JP6730450B2 (ja) * 2016-12-06 2020-07-29 株式会社東芝 半導体装置
JP6673246B2 (ja) * 2017-02-06 2020-03-25 株式会社デンソー 半導体装置
JP6776923B2 (ja) * 2017-02-06 2020-10-28 株式会社デンソー 半導体装置
US10872846B2 (en) 2017-06-22 2020-12-22 Renesas Electronics America Inc. Solid top terminal for discrete power devices
JP6945418B2 (ja) * 2017-10-24 2021-10-06 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7019024B2 (ja) * 2018-03-07 2022-02-14 三菱電機株式会社 半導体装置及び電力変換装置
DE112019004313T5 (de) * 2018-08-29 2021-05-20 Rohm Co., Ltd. Gehäusestruktur, halbleiterbauteil und verfahren zum bilden einer gehäusestruktur
CN113632215A (zh) * 2019-03-26 2021-11-09 罗姆股份有限公司 电子装置以及电子装置的制造方法
JP2022176744A (ja) * 2021-05-17 2022-11-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE102023202869A1 (de) * 2023-03-29 2024-10-02 Zf Friedrichshafen Ag Verfahren zur Herstellung einer elektrischen Anordnung
JP2025077454A (ja) * 2023-11-06 2025-05-19 ミネベアパワーデバイス株式会社 半導体装置

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
GB2194477A (en) * 1986-08-28 1988-03-09 Stc Plc Solder joint
US5842275A (en) * 1995-09-05 1998-12-01 Ford Motor Company Reflow soldering to mounting pads with vent channels to avoid skewing
JP3420153B2 (ja) * 2000-01-24 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
CN1184684C (zh) 2000-10-05 2005-01-12 三洋电机株式会社 半导体装置和半导体模块
JP2002280503A (ja) * 2001-03-16 2002-09-27 Unisia Jecs Corp 半導体装置
US6774482B2 (en) * 2002-12-27 2004-08-10 International Business Machines Corporation Chip cooling
US7748440B2 (en) * 2004-06-01 2010-07-06 International Business Machines Corporation Patterned structure for a thermal interface
JP2006202586A (ja) * 2005-01-20 2006-08-03 Nissan Motor Co Ltd 接合方法及び接合構造
JP4539980B2 (ja) * 2005-03-23 2010-09-08 富士電機システムズ株式会社 半導体装置およびその製造方法
JP4598687B2 (ja) 2006-02-09 2010-12-15 株式会社日立製作所 金属超微粒子使用接合材及びそれを用いた半導体装置
DE102007063308A1 (de) 2007-12-28 2009-07-02 Robert Bosch Gmbh Diode
US8124449B2 (en) * 2008-12-02 2012-02-28 Infineon Technologies Ag Device including a semiconductor chip and metal foils
JP5039070B2 (ja) * 2009-02-12 2012-10-03 株式会社東芝 半導体装置
JP5467799B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
WO2011142013A1 (ja) * 2010-05-12 2011-11-17 トヨタ自動車株式会社 半導体装置
US8718720B1 (en) * 2010-07-30 2014-05-06 Triquint Semiconductor, Inc. Die including a groove extending from a via to an edge of the die
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
US8766100B2 (en) * 2011-03-02 2014-07-01 Samsung Electronics Co., Ltd. Printed circuit board and semiconductor package using the same
DE102011078582A1 (de) 2011-07-04 2013-01-10 Robert Bosch Gmbh Verfahren zum Herstellen von strukturierten Sinterschichten und Halbleiterbauelement mit strukturierter Sinterschicht
ITMI20111776A1 (it) * 2011-09-30 2013-03-31 St Microelectronics Srl Sistema elettronico per saldatura a rifusione
US8587019B2 (en) * 2011-10-11 2013-11-19 Ledengin, Inc. Grooved plate for improved solder bonding
US9888568B2 (en) * 2012-02-08 2018-02-06 Crane Electronics, Inc. Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module
US9087833B2 (en) * 2012-11-30 2015-07-21 Samsung Electronics Co., Ltd. Power semiconductor devices

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