JP2016046393A5 - - Google Patents
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- Publication number
- JP2016046393A5 JP2016046393A5 JP2014169819A JP2014169819A JP2016046393A5 JP 2016046393 A5 JP2016046393 A5 JP 2016046393A5 JP 2014169819 A JP2014169819 A JP 2014169819A JP 2014169819 A JP2014169819 A JP 2014169819A JP 2016046393 A5 JP2016046393 A5 JP 2016046393A5
- Authority
- JP
- Japan
- Prior art keywords
- length
- laser
- resonance structure
- electrode pad
- laser resonance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 3
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014169819A JP6493825B2 (ja) | 2014-08-22 | 2014-08-22 | 半導体レーザ素子 |
| US14/830,596 US9466947B2 (en) | 2014-08-22 | 2015-08-19 | Semiconductor laser diode with shortened cavity length |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014169819A JP6493825B2 (ja) | 2014-08-22 | 2014-08-22 | 半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016046393A JP2016046393A (ja) | 2016-04-04 |
| JP2016046393A5 true JP2016046393A5 (enExample) | 2017-09-07 |
| JP6493825B2 JP6493825B2 (ja) | 2019-04-03 |
Family
ID=55349094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014169819A Active JP6493825B2 (ja) | 2014-08-22 | 2014-08-22 | 半導体レーザ素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9466947B2 (enExample) |
| JP (1) | JP6493825B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6654503B2 (ja) * | 2016-05-02 | 2020-02-26 | 日本電信電話株式会社 | 光半導体素子および半導体モノリシック型光回路 |
| EP3324654A1 (en) | 2016-11-17 | 2018-05-23 | Giesecke+Devrient Mobile Security GmbH | Integrating internet-of-things devices with sim and without sim |
| CN115210976B (zh) * | 2020-03-16 | 2025-02-25 | 三菱电机株式会社 | 半导体装置以及半导体装置的制造方法 |
| JP7623263B2 (ja) * | 2021-10-11 | 2025-01-28 | 浜松ホトニクス株式会社 | 半導体レーザ素子、半導体レーザ装置、及び半導体レーザ素子の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161389A (ja) * | 1982-03-19 | 1983-09-24 | Fujitsu Ltd | 光半導体装置 |
| DE3788841T2 (de) * | 1986-10-07 | 1994-05-05 | Sharp Kk | Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben. |
| JP2827411B2 (ja) * | 1990-03-13 | 1998-11-25 | 日本電気株式会社 | 光半導体素子及びその製造方法 |
| JPH0529703A (ja) | 1991-07-19 | 1993-02-05 | Toshiba Corp | 半導体レ−ザ素子 |
| JPH11212041A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | 半導体光素子 |
| JP2003258369A (ja) * | 2002-03-04 | 2003-09-12 | Sony Corp | 半導体レーザ素子、マルチビーム半導体レーザ、及び製造方法 |
| US9966733B2 (en) * | 2012-05-02 | 2018-05-08 | Mellanox Technologies Silicon Photonics Inc. | Integration of laser into optical platform |
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2014
- 2014-08-22 JP JP2014169819A patent/JP6493825B2/ja active Active
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2015
- 2015-08-19 US US14/830,596 patent/US9466947B2/en active Active