JP2010153639A - パワー半導体装置およびその製造方法 - Google Patents
パワー半導体装置およびその製造方法 Download PDFInfo
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- JP2010153639A JP2010153639A JP2008330879A JP2008330879A JP2010153639A JP 2010153639 A JP2010153639 A JP 2010153639A JP 2008330879 A JP2008330879 A JP 2008330879A JP 2008330879 A JP2008330879 A JP 2008330879A JP 2010153639 A JP2010153639 A JP 2010153639A
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- Prior art keywords
- resin
- insulating layer
- power semiconductor
- based insulating
- semiconductor device
- Prior art date
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Abstract
【解決手段】パワー半導体装置20は、パワー半導体素子1と、リードフレーム3と、ヒートスプレッダ4と、放熱部材8とを備えている。ヒートスプレッダ4は、パワー半導体素子1を一方の面に搭載している。放熱部材8は、ヒートスプレッダ4の上記一方の面に対向する他方の面に接合されている。放熱部材8は、樹脂系絶縁層7と、樹脂系絶縁層7の両面に貼り合わされた1対の金属箔6a、6bとを含んでいる。
【選択図】図1
Description
充填材を球状粒子ではなく、異形な形状とした場合、充填材同士の接触が点接触でなくなることから、樹脂系絶縁層の熱伝導性はこの式1から導き出される熱伝導率に必ずしも一致しない。ここで異形形状の充填材を用いて熱伝導性を追求した樹脂系絶縁層では、たとえば無機粉末が高充填されており、絶縁層としての熱特性、電気絶縁特性などを得るためには十分な加圧工程を経ることが必須となる。
まず硬化前の樹脂系絶縁層の両面が1対の金属箔で挟まれた後に、樹脂系絶縁層が加熱加圧硬化されて、樹脂系絶縁層と1対の金属箔とを有する放熱部材が形成される。硬化させた樹脂系絶縁層の少なくとも片面側の金属箔がエッチング処理によりパターニングされる。パワー半導体素子を一方の面に搭載した金属部材に、エッチング処理後の放熱部材が接合される。パワー半導体素子の周囲が樹脂によって封止される。
(実施の形態1)
図1は本発明の実施の形態1における半導体装置の構成を概略的に示す断面図である。また図2は図1に示す半導体装置から封止樹脂を省略して示す概略平面図である。図2のI−I線に沿う断面が図1に示す構成に対応する。
図3は、本発明の実施の形態1におけるパワー半導体装置の製造方法について説明するためのフロー図である。図3を参照して、まず硬化前の樹脂系絶縁層7の両面が1対のたとえば銅箔よりなる金属箔6a、6bにより挟まれる(ステップS1)。この後、樹脂系絶縁層7を加熱加圧硬化させることにより、硬化後の樹脂系絶縁層7と1対の銅箔6a、6bとを有する放熱部材(両面銅箔付樹脂系絶縁層)8が形成される(ステップS2)。放熱部材8の一方の銅箔6aがエッチング処理によりパターニングされる(ステップS3)。一方で、ヒートスプレッダ4の一方表面にはんだ2を介してパワー半導体素子1が搭載され、かつリードフレーム3が取り付けられる。このパワー半導体素子1を搭載し、かつリードフレーム3を取り付けられたヒートスプレッダ4に放熱部材8が接合材5を介して接合される(ステップS4)。封止樹脂9により、パワー半導体素子1などが封止される(ステップS5)。
<硬化前の樹脂系絶縁層の両面を1対の銅箔で挟む工程>
たとえばエポキシ樹脂に熱伝導性の充填材としてたとえば窒化ホウ素が50体積%の充填率で加えられる。このとき、硬化剤、硬化促進剤、カップリング剤などの添加剤が必要に応じて加えられることは言うまでもない。このようにしてできた樹脂系絶縁層7中において充填材を均一に分散させるために、樹脂系絶縁層7が分散装置で攪拌される。このとき、樹脂系絶縁層7の樹脂粘度が高くなることから必要に応じて、メチルエチルケトンなどの有機溶媒で希釈しながら攪拌することが好ましい。
硬化前の樹脂系絶縁層7の両面を1対の銅箔6a、6bで挟んだ後、平板プレスまたはロールプレスによって樹脂系絶縁層7が加熱プレスされる。このとき、樹脂系絶縁層7を挟んだ1対の銅箔6a、6bの各々を樹脂系絶縁層7に接着させる工程と、樹脂系絶縁層7内の気泡、空洞部分を埋める工程と、樹脂系絶縁層7を硬化させる工程とが同時に行なわれる。この加熱プレスは、気泡を埋めることから真空下で行なわれることが望ましい。しかし、加熱プレス時の条件などによっては空洞部分が埋まり、樹脂系絶縁層7の電気絶縁性および熱伝導性が十分確保できる場合があるため、必ずしも真空下で加熱プレスを行う必要はない。
上記の加熱プレス後、放熱部材8の銅箔6aがエッチング処理によりパターニングされる。これにより、銅箔6aの少なくともヒートスプレッダと接合する部分が残されて他の部分が除去される。このとき、ヒートスプレッダ4が複数ある場合は、ヒートスプレッダ4の個数に合わせてエッチング処理が行なわれる。エッチング処理を施された放熱部材8は、パワー半導体素子1のサイズに適合したサイズとなるように打ち抜き加工によって外形加工が行なわれる。
リードフレーム3付の熱拡散板となるヒートスプレッダ4の一方の面にIGBTやFWDなどのパワー半導体素子1がはんだ2によりはんだ付けされる。さらに、たとえばアルミニウムよりなるボンディングワイヤ10によりワイヤボンドが施される。放熱部材8の銅箔6a、6bのうち、ヒートスプレッダ4との接合のためにエッチング処理を施された銅箔6aとヒートスプレッダ4とが接合材5により接合される。この接合に用いられる接合材5には、たとえばエポキシ樹脂に銀粒子を充填した銀ペーストを用いることができる。
パワー半導体素子1、リードフレーム3、ヒートスプレッダ4、放熱部材8などが一体となった状態で、パワー半導体素子1の周囲がたとえばトランスファーモールド装置で封止樹脂9により樹脂封止される。このときの成型温度・成型時間は、たとえば180℃、3分である。またこのときの成型圧力はたとえば10MPaでよいが、封止樹脂9が金型から取り出せる程度に硬化し、樹脂が全体にいきわたる条件であればこの限りではない。このトランスファーモールド後に封止樹脂9の硬化を完全に行うためにアフターキュア工程が3時間〜8時間程度加えられてもよい。
アルミナなどの球状充填材を樹脂へ充填した場合には、硬化前の樹脂の流動性は比較的高く、加熱プレス時の圧力が低くても樹脂系絶縁層本来の熱伝導率や絶縁耐圧を達成することができる。しかし、アルミナ、シリカなどの充填材を用いた場合、充填材の形状にかかわらず、限界に近い充填を行ったとしても樹脂系絶縁層の熱伝導率としては、せいぜい5W/(m・K)程度となることが知られている。半導体装置の放熱性を高めるためには、この樹脂系絶縁層の熱伝導性を向上させることが必要となる。
図4は、本発明の実施の形態2におけるパワー半導体装置の構成を概略的に示す断面図である。図4を参照して、本実施の形態のパワー半導体装置の構成は、実施の形態1の構成と比較して、ボンディングワイヤ10の代わりに、たとえば銅板からなる板状リード11が用いられている点において異なっている。この板状リード11によりパワー半導体素子1とリードフレームとが電気的に接続されている。板状リード11とパワー半導体素子1との接合および板状リード11とリードフレーム3との接合はたとえばはんだ(図示せず)によりなされている。
樹脂系絶縁層7の両面に貼り合わせる銅箔6a、6bの厚みは20μm〜200μmと薄い。このため、ヒートスプレッダ4と放熱部材8とを接合する接合材5は銀ペーストであることが好ましいが、はんだであってもよい。はんだを用いて接合する場合、銅箔6aの表面にそのままはんだ付けするとCu−Sn合金ができ、いわゆる「銅食われ」の現象によって信頼性の低下を招くことがある。これを防止するために、銅箔6aの表面にNiめっきが施されてもよい。このNiめっきを施した後にNiめっき上にはんだ付けすることで薄い銅箔6aに「銅食われ」の現象が生じることを防止できる。Niめっきを施さない場合は、「銅食われ」による影響を考え、ヒートスプレッダ4と接合する銅箔6aの厚さを100μm以上200μm以下とすることがさらに好ましい。
ヒートスプレッダ4と銅箔6aとの接合材5の材料として金属微粒子(ナノ粒子)を含むペーストを用いることもできる。このペースト内にはSnが含まれていないため、このペーストを用いても銅箔6aに「銅食われ」の現象が生じることはない。このため、「銅食われ」による銅箔6aの厚さの制限を緩和することができる。
図5は、本発明の実施の形態5におけるパワー半導体装置の構成を概略的に示す断面図である。図5を参照して、本実施の形態のパワー半導体装置の構成は、実施の形態1の構成と比較して、パワー半導体素子1などを実装したヒートスプレッダ4と放熱部材8とを接合したものを、ケース12に入れた後、液状の樹脂9でポッティング封止した構成を有している点において異なっている。ケースは、たとえばポリフェニレンサルファイド(PPS)樹脂よりなっている。また樹脂9は、たとえばエポキシ樹脂である。またケース12を用いているため、リードフレーム3は樹脂9の上面から外部に露出している。
樹脂系絶縁層7の塗工は、基材を銅箔とすることが好ましい。しかし、樹脂系絶縁層7は一旦、PET(Poly Ethylene Terephthalate)などの離型フィルムに塗工された後に、必要に応じて銅箔に転写されて使用されてもよい。銅箔をPETフィルムに変更したこと以外は実施の形態1と同様の工程を用いることができる。樹脂系絶縁層7をPETフィルムに塗工することにより、塗工時の巻き取り性、基材を軽くすることで塗工後のロール形状での管理が簡便となることから、基材は銅箔に限定されない。
Claims (6)
- パワー半導体素子と、
前記パワー半導体素子を一方の面に搭載する金属部材と、
前記金属部材の前記一方の面に対向する他方の面に接合された放熱部材とを備え、
前記放熱部材は、樹脂系絶縁層と、前記樹脂系絶縁層の両面に貼り合わされた1対の金属箔とを含む、パワー半導体装置。 - 前記金属部材はリードフレームおよび熱拡散板を含み、
前記パワー半導体素子は前記熱拡散板に搭載されている、請求項1に記載のパワー半導体装置。 - 前記樹脂系絶縁層は、円盤状およびフレーク状のいずれかの形状の充填材を少なくとも1種類含み、
前記樹脂系絶縁層における前記充填材の充填率は40体積%以上である、請求項1または2に記載のパワー半導体装置。 - 前記樹脂系絶縁層の厚さが50μm以上500μm以下であり、前記樹脂系絶縁層の両面の前記金属箔の各々の厚さが20μm以上200μm以下である、請求項1〜3のいずれかに記載のパワー半導体装置。
- 前記金属部材と前記金属箔とを接合する接合材をさらに備え、
前記接合材が銀を含んだ材質よりなっている、請求項1〜4のいずれかに記載のパワー半導体装置。 - 硬化前の樹脂系絶縁層の両面を1対の金属箔で挟んだ後に、前記樹脂系絶縁層を加熱加圧硬化させて、前記樹脂系絶縁層と1対の前記金属箔とを有する放熱部材を形成する工程と、
硬化させた前記樹脂系絶縁層の少なくとも片面側の前記金属箔をエッチング処理によりパターニングする工程と、
パワー半導体素子を一方の面に搭載した金属部材に、前記エッチング処理後の前記放熱部材を接合する工程と、
前記パワー半導体素子の周囲を樹脂によって封止する工程とを備えた、パワー半導体装置の製造方法。
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