JP2010114152A5 - - Google Patents

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JP2010114152A5
JP2010114152A5 JP2008283546A JP2008283546A JP2010114152A5 JP 2010114152 A5 JP2010114152 A5 JP 2010114152A5 JP 2008283546 A JP2008283546 A JP 2008283546A JP 2008283546 A JP2008283546 A JP 2008283546A JP 2010114152 A5 JP2010114152 A5 JP 2010114152A5
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region
trench
semiconductor device
conductivity type
body region
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JP2008283546A
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JP5353190B2 (en
JP2010114152A (en
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Claims (8)

第１導電型のドリフト領域の表面に第２導電型のボディ領域が積層されている半導体基板を備えた半導体装置であり、
前記半導体基板の上面から前記ボディ領域を貫通する複数の第１トレンチと、
前記第１トレンチ内に配置されているゲート電極と、
前記ゲート電極を被覆している絶縁膜と、
前記第１トレンチの底部を包囲しており、ドリフト領域によってボディ領域より分離されている第２導電型の第１拡散領域と、
隣り合う第１トレンチの間のドリフト領域に設けられており、その一端部がボディ領域に接する一方で他端部が第１拡散領域に接し、ドリフト領域によって第１トレンチから分離されている第２導電型の第２拡散領域と、
を備えている半導体装置。 A semiconductor device comprising a semiconductor substrate in which a body region of a second conductivity type is stacked on the surface of a drift region of a first conductivity type,
A plurality of first trenches penetrating the body region from an upper surface of the semiconductor substrate;
A gate electrode disposed in the first trench;
An insulating film covering the gate electrode;
A first diffusion region of a second conductivity type surrounding the bottom of the first trench and separated from the body region by a drift region;
A second region is provided in a drift region between adjacent first trenches, one end of which is in contact with the body region while the other end is in contact with the first diffusion region, and is separated from the first trench by the drift region. A conductive type second diffusion region;
A semiconductor device comprising: 前記隣り合う第１トレンチの間であって前記第２拡散領域の上面側には、底部が前記ボディ領域内にあって前記ドリフト領域に達していない第２トレンチが設けられていることを特徴とする請求項１に記載の半導体装置。   The second trench is provided between the adjacent first trenches and on the upper surface side of the second diffusion region, the bottom of which is in the body region and does not reach the drift region. The semiconductor device according to claim 1. 前記第２トレンチは、半導体装置の積層方向に伸びていることを特徴とする請求項２に記載の半導体装置。   The semiconductor device according to claim 2, wherein the second trench extends in a stacking direction of the semiconductor device. 前記第２トレンチは、前記第１トレンチの長手方向にも伸びており、前記第２拡散領域が前記第１トレンチの長手方向に伸びていることを特徴とする請求項３に記載の半導体装置。   4. The semiconductor device according to claim 3, wherein the second trench extends in a longitudinal direction of the first trench, and the second diffusion region extends in a longitudinal direction of the first trench. 前記第１トレンチと前記第２トレンチの間に第１導電型のソース領域が設けられており、前記ソース領域は前記第１トレンチと対向する前記第２トレンチの内壁面に露出しており、前記ソース電極が前記第２トレンチ内に充填されていることを特徴とする請求項２乃至４のいずれか一項の半導体装置。   A source region of a first conductivity type is provided between the first trench and the second trench, and the source region is exposed on an inner wall surface of the second trench facing the first trench, The semiconductor device according to claim 2, wherein a source electrode is filled in the second trench. 前記第２拡散領域と前記第２トレンチの間の前記ボディ領域内には第２導電型のコンタクト領域が設けられており、前記コンタクト領域の不純物濃度は、前記ボディ領域の不純物濃度よりも高濃度であることを特徴とする請求項２乃至５のいずれか一項に記載の半導体装置。   A contact region of a second conductivity type is provided in the body region between the second diffusion region and the second trench, and the impurity concentration of the contact region is higher than the impurity concentration of the body region. The semiconductor device according to claim 2, wherein the semiconductor device is a semiconductor device. 前記第１トレンチの長手方向の側端部には、底部が前記ボディ領域内にあって前記ドリフト領域に達していない段差部が設けられており、
前記段差部の下面側には、その一端が前記ボディ領域に接する一方でその他端が前記第１拡散領域に接する第２導電型の第３拡散領域が設けられていることを特徴とする請求項１乃至６のいずれか一項に記載の半導体装置。 A stepped portion that has a bottom portion in the body region and does not reach the drift region is provided at a side end portion in the longitudinal direction of the first trench,
The lower surface side of the stepped portion is provided with a third diffusion region of a second conductivity type whose one end is in contact with the body region and the other end is in contact with the first diffusion region. The semiconductor device according to any one of 1 to 6. 第１導電型のドリフト領域の表面に第２導電型のボディ領域が積層されている半導体基板を備えた半導体装置であり、
前記半導体基板の上面から前記ボディ領域を貫通する複数の第１トレンチと、
前記第１トレンチ内に配置されているゲート電極と、
前記ゲート電極を被覆している絶縁膜と、
前記第１トレンチの底部を包囲しており、ドリフト領域によってボディ領域より分離されている第２導電型の第１拡散領域と、
隣り合う第１トレンチの間のドリフト領域に設けられており、その一端部がボディ領域に接する一方で他端部が第１拡散領域に接し、ドリフト領域によって第１トレンチから分離されている第２導電型の第２拡散領域と、
を備えている半導体装置の製造方法であって、
前記半導体基板に、その底部が前記ボディ領域内にあって前記ドリフト領域に達していない第２トレンチを形成する工程と、
形成した前記第２トレンチの底部からイオン注入を行うことで、前記第２拡散領域を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 A semiconductor device comprising a semiconductor substrate in which a body region of a second conductivity type is stacked on the surface of a drift region of a first conductivity type,
A plurality of first trenches penetrating the body region from an upper surface of the semiconductor substrate;
A gate electrode disposed in the first trench;
An insulating film covering the gate electrode;
A first diffusion region of a second conductivity type surrounding the bottom of the first trench and separated from the body region by a drift region;
A second region is provided in a drift region between adjacent first trenches, one end of which is in contact with the body region while the other end is in contact with the first diffusion region, and is separated from the first trench by the drift region. A conductive type second diffusion region;
A method of manufacturing a semiconductor device comprising:
Forming a second trench in the semiconductor substrate, the bottom of which is in the body region and does not reach the drift region;
Forming the second diffusion region by performing ion implantation from the bottom of the formed second trench;
A method for manufacturing a semiconductor device, comprising:
JP2008283546A 2008-11-04 2008-11-04 Semiconductor device and manufacturing method of semiconductor device Active JP5353190B2 (en)

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JP2010114152A JP2010114152A (en) 2010-05-20
JP2010114152A5 true JP2010114152A5 (en) 2011-06-16
JP5353190B2 JP5353190B2 (en) 2013-11-27

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JP5531787B2 (en) * 2010-05-31 2014-06-25 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
JP5537359B2 (en) * 2010-09-15 2014-07-02 株式会社東芝 Semiconductor device
JP5480084B2 (en) * 2010-09-24 2014-04-23 株式会社東芝 Semiconductor device
JP5710644B2 (en) * 2010-12-10 2015-04-30 三菱電機株式会社 Silicon carbide semiconductor device and manufacturing method thereof
KR101439310B1 (en) 2012-11-21 2014-09-11 도요타 지도샤（주） Semiconductor device
JP6266975B2 (en) * 2013-12-26 2018-01-24 トヨタ自動車株式会社 Insulated gate semiconductor device manufacturing method and insulated gate semiconductor device
JP6208579B2 (en) 2013-12-26 2017-10-04 トヨタ自動車株式会社 Semiconductor device
JP6169966B2 (en) 2013-12-26 2017-07-26 トヨタ自動車株式会社 Semiconductor device and manufacturing method of semiconductor device
US10312233B2 (en) 2014-09-30 2019-06-04 Mitsubishi Electric Corporation Semiconductor device
JP6560141B2 (en) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 Switching element
JP6560142B2 (en) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 Switching element
JP2019096631A (en) * 2016-04-07 2019-06-20 三菱電機株式会社 Semiconductor device and power converter
JP6750300B2 (en) 2016-05-16 2020-09-02 富士電機株式会社 Semiconductor device and method of manufacturing semiconductor device
US11355629B2 (en) * 2017-03-07 2022-06-07 Mitsubishi Electric Corporation Semiconductor device and power converter
JP7151363B2 (en) * 2018-10-16 2022-10-12 富士電機株式会社 Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
US20220069073A1 (en) * 2020-08-28 2022-03-03 Nanjing Zizhu Microelectronics Co., Ltd. Integrated circuit system with super junction transistor mechanism and method of manufacture thereof

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JP4738562B2 (en) * 2000-03-15 2011-08-03 三菱電機株式会社 Manufacturing method of semiconductor device
JP2002368220A (en) * 2001-06-04 2002-12-20 Hitachi Ltd Semiconductor device and power system using the same
JP4178789B2 (en) * 2001-12-18 2008-11-12 富士電機デバイステクノロジー株式会社 Semiconductor device and manufacturing method thereof
JP4892172B2 (en) * 2003-08-04 2012-03-07 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
EP1959495B1 (en) * 2005-11-22 2017-09-20 Shindengen Electric Manufacturing Co., Ltd. Trench gate power semiconductor device
JP4915221B2 (en) * 2006-11-28 2012-04-11 トヨタ自動車株式会社 Semiconductor device

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