JP2010105153A - Mems装置およびマイクロエレクトロメカニカルシステム(mems)を組み立てる方法 - Google Patents
Mems装置およびマイクロエレクトロメカニカルシステム(mems)を組み立てる方法 Download PDFInfo
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- JP2010105153A JP2010105153A JP2009245586A JP2009245586A JP2010105153A JP 2010105153 A JP2010105153 A JP 2010105153A JP 2009245586 A JP2009245586 A JP 2009245586A JP 2009245586 A JP2009245586 A JP 2009245586A JP 2010105153 A JP2010105153 A JP 2010105153A
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- 238000000034 method Methods 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
- B81C3/004—Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/05—Aligning components to be assembled
- B81C2203/051—Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
【解決手段】MEMSダイは、バンプ108を有しパターン形成された金属層104とガラス層102に取り付けられたMEMS構成要素106を含む。ガラス層の上または内に配置された1つまたは複数の参照フィーチャが、金属層内に製作または形成されたウインドウ112を使用して光学的に検知可能である。これを使用してMEMS構成要素を有するガラス層102とバンプ108を有する金属層104を正確に位置合わせし組み立てることができる。
【選択図】図1−1
Description
101 MEMSダイ
102 ガラス層
104 金属層
106 MEMS構成要素
108 バンプ
110 バンプのパターン
112 ウインドウ
114 前面
116 裏面
118 裏面
120 参照フィーチャ
124 基板
126 矢印
128 外周部
130 他の参照フィーチャ
Claims (3)
- 第1の表面と第2の表面とを有し少なくとも1つの参照フィーチャを有するガラス層と、
前記ガラス層の前記第1の表面に結合された第1の表面と第2の表面とを有する金属層であって、金属層を通って延在し、光を透過するように動作可能な少なくとも2つのウインドウを有し、前記少なくとも2つのウインドウが、前記ガラス層の前記少なくとも1つの参照フィーチャの光学的検知ができるように配置された、金属層と、
前記ガラス層の前記第2の表面に結合された複数のMEMS構成要素と、
前記金属層の前記第2の表面上に配置されたバンプのパターンであって、前記ガラス層の少なくとも1つの参照フィーチャを光学的に突き止めるために、前記金属層内に置かれた前記少なくとも2つのウインドウを使用して前記複数のMEMS構成要素と光学的に位置合わせされたバンプのパターンとを含むマイクロエレクトロメカニカルシステムのウェーハ。 - 外周部を有する基板と、
MEMSウェーハに施された少なくとも1つのフィーチャに対して位置決めされた前記MEMSウェーハのダイシングされた部分であって、第1の表面と第2の表面と少なくとも1つの参照フィーチャとを含むガラス層と、金属層と、MEMS構成要素と、バンプのパターンとを含む前記MEMSウェーハのダイシングされた部分とを含み、
前記MEMS構成要素は、前記ガラス層の前記第2の表面に結合され、
前記金属層は、前記ガラス層の前記第1の表面に結合された第1の表面と、第2の表面とを有し、
前記バンプのパターンは、前記金属層の前記第2の表面上に配置され、前記MEMS構成要素と前記ガラス層の前記少なくとも1つの参照フィーチャとに光学的に位置合わせされる、MEMS装置。 - MEMS装置を組み立てる方法であって、
少なくとも1つの参照フィーチャを有するガラス層を形成するステップと、
前記金属層を通って延在する少なくとも2つの光透過性ウインドウを有する金属層を形成するステップと、
前記金属層を前記ガラス層に取り付けるステップと、
前記金属層とは反対側の前記ガラス層上に、複数のMEMS構成要素を取り付けるステップと、
前記ガラス層とは反対側の前記金属層上に、前記少なくとも2つのウインドウを通して前記MEMS構成要素に対して光学的に位置合わせされた複数のバンプを有するバンプのパターンを取り付けるステップと、
個々のMEMSダイを形成するステップと、
前記MEMSダイを位置合わせして、基板上に実装するステップとを含む方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/259,953 US7833829B2 (en) | 2008-10-28 | 2008-10-28 | MEMS devices and methods of assembling micro electromechanical systems (MEMS) |
Publications (1)
Publication Number | Publication Date |
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JP2010105153A true JP2010105153A (ja) | 2010-05-13 |
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JP2009245586A Pending JP2010105153A (ja) | 2008-10-28 | 2009-10-26 | Mems装置およびマイクロエレクトロメカニカルシステム(mems)を組み立てる方法 |
Country Status (4)
Country | Link |
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US (1) | US7833829B2 (ja) |
EP (1) | EP2181961A3 (ja) |
JP (1) | JP2010105153A (ja) |
KR (1) | KR20100047173A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017158815A1 (ja) * | 2016-03-18 | 2017-09-21 | 株式会社日立製作所 | Memsの製造方法およびmemsの製造装置 |
Families Citing this family (4)
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US20130130424A1 (en) * | 2010-05-03 | 2013-05-23 | S3C, Inc. | Process for minimizing chipping when separating mems dies on a wafer |
US8932910B2 (en) * | 2010-05-20 | 2015-01-13 | Ev Group E. Thallner Gmbh | Method for producing chip stacks, and a carrier for carrying out the method |
US8640552B2 (en) | 2011-09-06 | 2014-02-04 | Honeywell International Inc. | MEMS airflow sensor die incorporating additional circuitry on the die |
CN105413769A (zh) * | 2015-12-22 | 2016-03-23 | 苏州汶颢芯片科技有限公司 | 微流控芯片对准键合装置 |
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JPWO2017158815A1 (ja) * | 2016-03-18 | 2018-09-06 | 株式会社日立製作所 | Memsの製造方法およびmemsの製造装置 |
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Also Published As
Publication number | Publication date |
---|---|
US7833829B2 (en) | 2010-11-16 |
US20100105167A1 (en) | 2010-04-29 |
EP2181961A2 (en) | 2010-05-05 |
KR20100047173A (ko) | 2010-05-07 |
EP2181961A3 (en) | 2013-05-15 |
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