JP2010097993A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP2010097993A
JP2010097993A JP2008265261A JP2008265261A JP2010097993A JP 2010097993 A JP2010097993 A JP 2010097993A JP 2008265261 A JP2008265261 A JP 2008265261A JP 2008265261 A JP2008265261 A JP 2008265261A JP 2010097993 A JP2010097993 A JP 2010097993A
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Japan
Prior art keywords
plasma
gas
processing
wafer
substrate
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Pending
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JP2008265261A
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English (en)
Japanese (ja)
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JP2010097993A5 (fr
Inventor
Masatsuya Hamano
勝艶 浜野
Masanori Nakayama
雅則 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2008265261A priority Critical patent/JP2010097993A/ja
Publication of JP2010097993A publication Critical patent/JP2010097993A/ja
Publication of JP2010097993A5 publication Critical patent/JP2010097993A5/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
JP2008265261A 2008-10-14 2008-10-14 プラズマ処理方法 Pending JP2010097993A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008265261A JP2010097993A (ja) 2008-10-14 2008-10-14 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008265261A JP2010097993A (ja) 2008-10-14 2008-10-14 プラズマ処理方法

Publications (2)

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JP2010097993A true JP2010097993A (ja) 2010-04-30
JP2010097993A5 JP2010097993A5 (fr) 2011-11-17

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JP2008265261A Pending JP2010097993A (ja) 2008-10-14 2008-10-14 プラズマ処理方法

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JP (1) JP2010097993A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019053925A1 (fr) * 2017-09-12 2019-03-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Procédé de fabrication de dispositif à semi-conducteur, dispositif de traitement de substrat et programme
JP7479257B2 (ja) 2020-09-16 2024-05-08 東京エレクトロン株式会社 プラズマパージ方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005074016A1 (fr) * 2004-01-28 2005-08-11 Tokyo Electron Limited Procédé pour nettoyer une chambre de traitement d'un dispositif de traitement de substrat, dispositif de traitement de substrat et procédé pour traiter le substrat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005074016A1 (fr) * 2004-01-28 2005-08-11 Tokyo Electron Limited Procédé pour nettoyer une chambre de traitement d'un dispositif de traitement de substrat, dispositif de traitement de substrat et procédé pour traiter le substrat

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019053925A1 (fr) * 2017-09-12 2019-03-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Procédé de fabrication de dispositif à semi-conducteur, dispositif de traitement de substrat et programme
JP7479257B2 (ja) 2020-09-16 2024-05-08 東京エレクトロン株式会社 プラズマパージ方法

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