JP2010079112A - フォトマスクの製造方法、及びパターン転写方法 - Google Patents

フォトマスクの製造方法、及びパターン転写方法 Download PDF

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Publication number
JP2010079112A
JP2010079112A JP2008249371A JP2008249371A JP2010079112A JP 2010079112 A JP2010079112 A JP 2010079112A JP 2008249371 A JP2008249371 A JP 2008249371A JP 2008249371 A JP2008249371 A JP 2008249371A JP 2010079112 A JP2010079112 A JP 2010079112A
Authority
JP
Japan
Prior art keywords
photomask
defect
pattern
film
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008249371A
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English (en)
Japanese (ja)
Inventor
Michiaki Sano
道明 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2008249371A priority Critical patent/JP2010079112A/ja
Priority to KR1020090090895A priority patent/KR20100036190A/ko
Publication of JP2010079112A publication Critical patent/JP2010079112A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008249371A 2008-09-28 2008-09-28 フォトマスクの製造方法、及びパターン転写方法 Pending JP2010079112A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008249371A JP2010079112A (ja) 2008-09-28 2008-09-28 フォトマスクの製造方法、及びパターン転写方法
KR1020090090895A KR20100036190A (ko) 2008-09-28 2009-09-25 포토마스크의 제조 방법 및 패턴 전사 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008249371A JP2010079112A (ja) 2008-09-28 2008-09-28 フォトマスクの製造方法、及びパターン転写方法

Publications (1)

Publication Number Publication Date
JP2010079112A true JP2010079112A (ja) 2010-04-08

Family

ID=42209599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008249371A Pending JP2010079112A (ja) 2008-09-28 2008-09-28 フォトマスクの製造方法、及びパターン転写方法

Country Status (2)

Country Link
JP (1) JP2010079112A (ko)
KR (1) KR20100036190A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916316B2 (en) 2011-09-01 2014-12-23 Asahi Glass Company, Limited Reflecting mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank
WO2015166570A1 (ja) * 2014-05-01 2015-11-05 ルネサスエレクトロニクス株式会社 半導体集積回路のレイアウト設計方法および装置
US9268207B2 (en) 2012-09-28 2016-02-23 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, method of manufacturing thereof, reflective mask for EUV lithography and method of manufacturing thereof
US9989860B2 (en) 2015-10-21 2018-06-05 Samsung Electronics Co., Ltd. Method of generating a pattern on a photomask using a plurality of beams and pattern generator for performing the same
CN113013311A (zh) * 2019-12-19 2021-06-22 群创光电股份有限公司 电子装置的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916316B2 (en) 2011-09-01 2014-12-23 Asahi Glass Company, Limited Reflecting mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank
US9268207B2 (en) 2012-09-28 2016-02-23 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, method of manufacturing thereof, reflective mask for EUV lithography and method of manufacturing thereof
WO2015166570A1 (ja) * 2014-05-01 2015-11-05 ルネサスエレクトロニクス株式会社 半導体集積回路のレイアウト設計方法および装置
US9989860B2 (en) 2015-10-21 2018-06-05 Samsung Electronics Co., Ltd. Method of generating a pattern on a photomask using a plurality of beams and pattern generator for performing the same
CN113013311A (zh) * 2019-12-19 2021-06-22 群创光电股份有限公司 电子装置的制造方法

Also Published As

Publication number Publication date
KR20100036190A (ko) 2010-04-07

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