JP2010067851A - 回路装置の製造方法 - Google Patents
回路装置の製造方法 Download PDFInfo
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- JP2010067851A JP2010067851A JP2008233780A JP2008233780A JP2010067851A JP 2010067851 A JP2010067851 A JP 2010067851A JP 2008233780 A JP2008233780 A JP 2008233780A JP 2008233780 A JP2008233780 A JP 2008233780A JP 2010067851 A JP2010067851 A JP 2010067851A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
【解決手段】本発明では、半導体素子20が固着されたアイランド12を金型のキャビティ36に収納させ、熱硬化性樹脂を含む樹脂シート42を、アイランド12と金型30の内壁下面との間に介在させている。この状態で、金型30を180℃程度に加熱し、ゲート44から液状の封止樹脂を注入することで、溶融した樹脂シート42によりアイランド12の下面を薄く封止樹脂により被覆することができる。
【選択図】図4
Description
12 アイランド
14 封止樹脂
14A 第1封止樹脂
14B 第2封止樹脂
18 リード
20 半導体素子
22 金属細線
26 吊りリード
30 金型
32 上金型
34 下金型
36 キャビティ
38 ランナー
40A ポッド
42 樹脂シート
44 ゲート
46 エアベント
48 タブレット
50 プランジャー
60 リードフレーム
62 ブロック
64 ユニット
66 連結部
68 連結部
Claims (7)
- アイランドの上面に半導体素子を実装し、前記アイランドの周囲に一端が配置されたリードと前記半導体素子とを接続する工程と、
前記半導体素子が実装された前記アイランドをモールド金型のキャビティに収納させて、前記半導体素子および前記アイランドを、熱硬化性樹脂を含む封止樹脂により封止する工程と、を備え、
前記封止する工程では、熱硬化性樹脂を含む樹脂シートを、前記アイランドと前記モールド金型の内壁との間に介在させ、溶融した前記樹脂シートにより前記アイランドの下面を被覆することを特徴とする回路装置の製造方法。 - 前記封止する工程では、
前記アイランドの側辺から導出される吊りリードを前記モールド金型で狭持することにより、前記樹脂シートを前記アイランドの下面に押圧した状態で固定し、
溶融した前記樹脂シートから成る封止樹脂により前記アイランドの下面が被覆される厚さは、前記樹脂シートよりも薄いことを特徴とする請求項1記載の回路装置の製造方法。 - 前記封止する工程では、
前記樹脂シートを溶融させた後に、前記モールド金型のゲートから前記キャビティに液状の封止樹脂を注入し、
溶融された前記樹脂シートを、前記注入される前記封止樹脂よりも先に加熱硬化させることを特徴とする請求項2記載の回路装置の製造方法。 - 前記樹脂シートは、加熱硬化する前の粉体の前記熱硬化性樹脂を加圧して成形されることを特徴とする請求項3記載の回路装置の製造方法。
- 前記モールド金型のゲートから前記キャビティに注入される樹脂と、前記樹脂シートとは組成が同じであることを特徴とする請求項4記載の回路装置の製造方法。
- 前記樹脂シートの大きさを前記アイランドよりも大きく形成し、前記アイランドの下面全域を前記樹脂シートにより被覆することを特徴とする請求項5記載の回路装置の製造方法。
- 溶融した前記樹脂シートから成り前記アイランドの下面を被覆する前記封止樹脂に含まれるフィラーは、前記ゲートから注入されて前記半導体素子を被覆する前記封止樹脂に含まれるフィラーよりも、均一に分散した状態であることを特徴とする請求項6記載の回路装置の製造方法。
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JP2008233780A JP5308107B2 (ja) | 2008-09-11 | 2008-09-11 | 回路装置の製造方法 |
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JP2010067851A true JP2010067851A (ja) | 2010-03-25 |
JP5308107B2 JP5308107B2 (ja) | 2013-10-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012146770A (ja) * | 2011-01-11 | 2012-08-02 | Apic Yamada Corp | 樹脂モールド方法及び樹脂モールド装置並びに供給ハンドラ |
WO2013061183A1 (de) * | 2011-09-27 | 2013-05-02 | Rupprecht Gabriel | Elektrisch isolierendes harz - gehäuse für halbleiterbauelemente oder baugruppen und herstellungsverfahren mit einem moldprozess |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102216A (ja) * | 1991-10-09 | 1993-04-23 | Hitachi Ltd | 半導体装置 |
JPH05198707A (ja) * | 1992-01-22 | 1993-08-06 | Nec Kyushu Ltd | 半導体装置の製造方法 |
JPH05243301A (ja) * | 1992-02-28 | 1993-09-21 | Nec Kyushu Ltd | 半導体装置製造方法 |
JP2000114295A (ja) * | 1998-09-30 | 2000-04-21 | Mitsui High Tec Inc | 半導体装置の製造方法 |
-
2008
- 2008-09-11 JP JP2008233780A patent/JP5308107B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102216A (ja) * | 1991-10-09 | 1993-04-23 | Hitachi Ltd | 半導体装置 |
JPH05198707A (ja) * | 1992-01-22 | 1993-08-06 | Nec Kyushu Ltd | 半導体装置の製造方法 |
JPH05243301A (ja) * | 1992-02-28 | 1993-09-21 | Nec Kyushu Ltd | 半導体装置製造方法 |
JP2000114295A (ja) * | 1998-09-30 | 2000-04-21 | Mitsui High Tec Inc | 半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012146770A (ja) * | 2011-01-11 | 2012-08-02 | Apic Yamada Corp | 樹脂モールド方法及び樹脂モールド装置並びに供給ハンドラ |
WO2013061183A1 (de) * | 2011-09-27 | 2013-05-02 | Rupprecht Gabriel | Elektrisch isolierendes harz - gehäuse für halbleiterbauelemente oder baugruppen und herstellungsverfahren mit einem moldprozess |
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