JP2010066678A - フレキシブル電子装置及びフレキシブル表示装置 - Google Patents
フレキシブル電子装置及びフレキシブル表示装置 Download PDFInfo
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- JP2010066678A JP2010066678A JP2008234838A JP2008234838A JP2010066678A JP 2010066678 A JP2010066678 A JP 2010066678A JP 2008234838 A JP2008234838 A JP 2008234838A JP 2008234838 A JP2008234838 A JP 2008234838A JP 2010066678 A JP2010066678 A JP 2010066678A
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- 239000010409 thin film Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 130
- 239000012790 adhesive layer Substances 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 15
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- 239000003522 acrylic cement Substances 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 15
- 230000001070 adhesive effect Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 25
- 230000008646 thermal stress Effects 0.000 description 12
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004695 Polyether sulfone Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229920006393 polyether sulfone Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- -1 polyethylene naphthalate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】
表面に電子回路が形成された薄膜状の第1の基板の裏面と、柔軟性のある第2の基板の表面とは、80℃で1.0×103[Pa]以上、2.1×104[Pa]以下の弾性率の接着剤で接着される。
【選択図】図1
Description
図1は、本発明の第1の実施形態によるフレキシブル電子装置を示す構造断面図である。
次に、第2の実施形態よるフレキシブル電子装置として、フレキシブル表示装置を、図6を参照して説明する。
Claims (6)
- 表面に電子回路が形成された薄膜状の第1の基板と、
この第1の基板の裏面に塗布され、80℃での弾性率が1.0×103[Pa]以上、2.1×104[Pa]以下の接着層と、
この接着層により前記第1の基板の裏面が表面に接着された可撓性を有する第2の基板と、
を具備することを特徴とする電子装置。 - 前記接着層は、アクリル系接着剤またはアクリル系粘着剤であることを特徴とする請求項1に記載の電子装置。
- 表面に薄膜トランジスタが形成された薄膜状の第1の基板と、
この第1の基板の裏面に塗布され、80℃での弾性率が1.0×103[Pa]以上、2.1×104[Pa]以下の透明な接着層と、
この接着層により前記第1の基板の裏面が表面に接着された可撓性を有する第2の基板と、
を具備することを特徴とする表示装置。 - 前記接着層は、透明になる程度の薄さで塗布された有色の接着層であることを特徴とする請求項3に記載の表示装置。
- 前記接着層は、アクリル系接着剤またはアクリル系粘着剤であることを特徴とする請求項4に記載の表示装置。
- 前記第1の基板上にスペーサを介して形成され、表面に透明導電膜を有する対向基板と、
この対向基板と前記第1の基板との間に充填された液晶層と、
を具備することを特徴とする請求項3乃至5のいずれかに記載の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008234838A JP5426127B2 (ja) | 2008-09-12 | 2008-09-12 | フレキシブル表示装置 |
US12/557,883 US8345193B2 (en) | 2008-09-12 | 2009-09-11 | Flexible electronic device and flexible display device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008234838A JP5426127B2 (ja) | 2008-09-12 | 2008-09-12 | フレキシブル表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010066678A true JP2010066678A (ja) | 2010-03-25 |
JP5426127B2 JP5426127B2 (ja) | 2014-02-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008234838A Expired - Fee Related JP5426127B2 (ja) | 2008-09-12 | 2008-09-12 | フレキシブル表示装置 |
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US (1) | US8345193B2 (ja) |
JP (1) | JP5426127B2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101308480B1 (ko) * | 2011-06-14 | 2013-09-16 | 엘지디스플레이 주식회사 | 플라스틱 유기 전계 발광 표시 장치 및 그 제조 방법 |
KR102271485B1 (ko) * | 2014-01-13 | 2021-07-05 | 삼성디스플레이 주식회사 | 플렉서블 표시장치 |
KR20160116122A (ko) * | 2015-03-25 | 2016-10-07 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102444688B1 (ko) * | 2015-09-18 | 2022-09-20 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN107578707B (zh) * | 2017-10-20 | 2019-09-27 | 上海天马微电子有限公司 | 柔性显示面板及显示装置 |
US11749632B2 (en) * | 2021-03-31 | 2023-09-05 | Toyota Motor Engineering & Manufacturing North America, Inc. | Glass-based bonding structures for power electronics |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003280035A (ja) * | 2002-03-26 | 2003-10-02 | Toshiba Corp | 表示装置及びその製造方法 |
JP2003337549A (ja) * | 2002-05-17 | 2003-11-28 | Asahi Glass Co Ltd | フラットパネルディスプレー用基板、表示装置、有機エレクトロルミネセンス素子および液晶表示素子 |
JP2006011212A (ja) * | 2004-06-29 | 2006-01-12 | Sharp Corp | 液晶表示装置 |
WO2006011418A1 (ja) * | 2004-07-26 | 2006-02-02 | Bridgestone Corporation | 情報表示用パネルおよび情報表示装置 |
JP2007171375A (ja) * | 2005-12-20 | 2007-07-05 | Lintec Corp | ディスプレイ用回路基板及び粘着剤シート |
JP2007207910A (ja) * | 2006-01-31 | 2007-08-16 | Fujifilm Corp | 透光性電磁波シールド膜、光学フィルターおよびプラズマディスプレイパネル |
JP2008040144A (ja) * | 2006-08-07 | 2008-02-21 | Sharp Corp | 表示装置 |
JP2008197248A (ja) * | 2007-02-09 | 2008-08-28 | Citizen Holdings Co Ltd | 液晶パネル |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100867048B1 (ko) * | 2001-04-18 | 2008-11-04 | 닛토덴코 가부시키가이샤 | 가요성 프린트 배선회로에의 전자 부품의 장착 방법 및 가요성 프린트 배선회로 고정용 감압성 접착 시트 |
JP4434609B2 (ja) | 2002-03-29 | 2010-03-17 | 株式会社東芝 | 表示入力システム |
JP2007088235A (ja) | 2005-09-22 | 2007-04-05 | Seiko Epson Corp | 薄膜素子の転写方法、製造方法、薄膜装置の製造方法及び電子機器 |
-
2008
- 2008-09-12 JP JP2008234838A patent/JP5426127B2/ja not_active Expired - Fee Related
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003280035A (ja) * | 2002-03-26 | 2003-10-02 | Toshiba Corp | 表示装置及びその製造方法 |
JP2003337549A (ja) * | 2002-05-17 | 2003-11-28 | Asahi Glass Co Ltd | フラットパネルディスプレー用基板、表示装置、有機エレクトロルミネセンス素子および液晶表示素子 |
JP2006011212A (ja) * | 2004-06-29 | 2006-01-12 | Sharp Corp | 液晶表示装置 |
WO2006011418A1 (ja) * | 2004-07-26 | 2006-02-02 | Bridgestone Corporation | 情報表示用パネルおよび情報表示装置 |
JP2007171375A (ja) * | 2005-12-20 | 2007-07-05 | Lintec Corp | ディスプレイ用回路基板及び粘着剤シート |
JP2007207910A (ja) * | 2006-01-31 | 2007-08-16 | Fujifilm Corp | 透光性電磁波シールド膜、光学フィルターおよびプラズマディスプレイパネル |
JP2008040144A (ja) * | 2006-08-07 | 2008-02-21 | Sharp Corp | 表示装置 |
JP2008197248A (ja) * | 2007-02-09 | 2008-08-28 | Citizen Holdings Co Ltd | 液晶パネル |
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US20100066970A1 (en) | 2010-03-18 |
JP5426127B2 (ja) | 2014-02-26 |
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