JP2010047741A - 熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法並びに光半導体装置 - Google Patents
熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法並びに光半導体装置 Download PDFInfo
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- JP2010047741A JP2010047741A JP2008320024A JP2008320024A JP2010047741A JP 2010047741 A JP2010047741 A JP 2010047741A JP 2008320024 A JP2008320024 A JP 2008320024A JP 2008320024 A JP2008320024 A JP 2008320024A JP 2010047741 A JP2010047741 A JP 2010047741A
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- 238000010008 shearing Methods 0.000 description 1
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
(実施例1〜8、参考例1〜8)
表1及び表2に示す配合表に従って各材料を配合し、高速羽攪拌機(カワタ社製、SMP−2)を用い回転数3000min−1で10分間乾式混合した。得られた混合物を、2軸混練押出機(栗本鉄工所社製、KEX−50)を用い、機内最低温度50℃、機内最高温度130℃の条件で溶融混練した。いずれの混合物も、装置内で硬化することなく流動性を維持した状態で溶融混錬することができた。得られた混練物(光反射部材用熱硬化性樹脂組成物)について以下の評価を行った。なお、表中の各成分の配合量の単位は、重量部であり、空欄は配合なしを意味する。
(光反射性試験)
各熱硬化性樹脂組成物を、成形型温度180℃、成型圧力6.9MPa、キュア時間90秒の条件でトランスファー成型し、その後150℃で2時間ポストキュアすることにより、厚み1.0mmのテストピースとしての樹脂成形品を作製した。このテストピースの波長400nmにおける光反射率を、積分球型分光光度計、V−750型(日本分光株式会社製)を用いて測定した。そして、下記の評価基準に基づいて光反射特性を評価した。評価結果を表1及び表2に示す。
光反射率の評価基準
A:光波長400nmにおいて光反射率80%以上
B:光波長400nmにおいて光反射率70%以上80%未満
C:光波長400nmにおいて光反射率70%未満
120℃又は180℃に設定したホットプレート上で加熱しながら、熱硬化性樹脂組成物1gをステンレス製スパチュラで攪拌し、熱硬化反応が進行して攪拌不可能となるまでに流動性が失われるまでの時間をゲルタイムとして測定した。評価結果を表1及び表2に示す。
EMMI−1−66の規格に準じたスパイラルフロー測定用金型を用いて、熱硬化性樹脂組成物を上記条件で成形し、そのときの流動距離(cm)を求めた。求めた結果を表1及び表2に示す。
1:トリグリシジルイソシアヌレート(エポキシ当量100、日産化学社製、商品名TEPIS−S)
(B)硬化剤
2:ヘキサヒドロ無水フタル酸(和光純薬社製)
(C)硬化触媒
3:テトラ−n−ブチルホスホニウムテトラフルオロボレート(日本化学工業社製、商品名PX−4FB 融点100℃)
4:テトラ−n−ブチルホスホニウムテトラフェニルボレート(日本化学工業社製、商品名PX−4PB 融点230℃)
5:テトラフェニルホスホニウムテトラフェニルボレート(東京化成工業社製)
6:1,8−ジアザ−ビシクロ(5,4,0)ウンデセンテトラフェニルボレート(サンアプロ社製、商品名U−CAT 5002、融点130℃)
7:テトラ−n−ブチルホスホニウム−0,0−ジエチルホスホロジチオエート(日本化学工業社製、商品名PX−4ET、融点25℃以下)
8:テトラ−n−ブチルホスホニウムジメチルホスフェート(日本化学工業社製、商品名PX−4MD、融点25℃以下)
9:テトラ−n−ブチルホスホニウムアセテート、融点25℃以下)
10:テトラ−n−ブチルホスホニウムオクチレート、融点25℃以下)
11:トリフェニルホスフィン(東京化成工業社製、融点50℃)
(カップリング剤)
12:γ−グリシジドキシトリメトキシシラン(東レダウコーニング社製、商品名A−187)
(無機充填剤)
13:溶融シリカ(電気化学工業社製、商品名FB−301)
(白色顔料)
14:中空粒子(住友3M社製、商品名S60−HS)
15:アルミナ(アドマテックス社製、商品名AO−25R)
Claims (13)
- (A)エポキシ樹脂、(B)硬化剤及び(C)硬化触媒を含有する熱硬化性樹脂組成物において、
前記硬化触媒が、下記一般式(1)で表されるオニウム塩を含み、
硬化後の波長800nm〜350nmにおける光反射率が70%以上であり、
光反射部材を形成するために用いられる、
熱硬化性樹脂組成物。
[式(1)中、
X+は、脂肪族4級ホスホニウムイオン、芳香族4級ホスホニウムイオン、1,8−ジアザ−ビシクロ(5,4,0)ウンデカン−7−エンのオニウムイオン及びイミダゾール誘導体のオニウムイオンから選ばれるカチオンを示し、
Y−は、テトラフルオロホウ酸イオン、テトラフェニルホウ酸イオン、ヘキサフルオロリン酸イオン、ビストリフルオロメチルスルホニルイミド酸イオン、トリス(トリフルオロメチルスルホニル)炭素酸イオン、トリフルオロメタンスルホン酸イオン、ハロゲン化酢酸イオン、カルボン酸イオン及びハロゲンイオンから選ばれるアニオンを示す。] - 前記硬化触媒が、25℃〜250℃において固体の塩である、請求項1又は2に記載の熱硬化性樹脂組成物。
- 前記硬化触媒の含有率が、前記エポキシ樹脂及び前記硬化剤の合計量に対して0.001質量%〜5質量%である、請求項1〜3のいずれか一項に記載の熱硬化性樹脂組成物。
- 下記一般式(3)又は(4)で表される金属化合物を更に含有する、請求項1〜4のいずれか一項に記載の熱硬化性樹脂組成物。
[式(3)中、
Mは亜鉛、チタン、アルミニウム、バリウム、ホウ素、ケイ素及びジルコニウムから選ばれる金属又は半金属元素を示し、
Rxは、置換基を有していてもよい炭素数2〜50のアシレート基、置換基を有していてもよい炭素数2〜50のアルコキシ基、又はキレート基を示し、mはMの結合価数を示し、同一分子中の複数のRxは同一でも異なっていてもよい。]
[式(4)中、
nは正の整数を示し、
R5は、水素原子、置換基を有していてもよいメチル基、置換基を有していてもよいエチル基、置換基を有していてもよいプロピル基、置換基を有していてもよいイソプロピル基、置換基を有していてもよいフェニル基又は置換基を有していてもよいグリシドキシプロピル基を示し、
R6、R7及びR8はそれぞれ独立に水素原子、置換基を有していてもよいアルコキシ基、メチル基、エチル基、プロピル基、イソプロピル基、フェニル基、グリシドキシプロピル基、3−アミノプロピル基、アミノフェニル基、アミノフェノキシプロピル基、キレート基、又はアシレート基を示し、同一分子中の複数のR7及びR8は同一でも異なっていてもよい。] - 前記金属化合物の含有率が、前記エポキシ樹脂及び前記硬化剤の合計量に対して0.001質量%〜5質量%である、請求項5に記載の熱硬化性樹脂組成物。
- 前記エポキシ樹脂が2以上のエポキシ基を有する化合物であり、前記硬化剤が酸無水物基を有する化合物である、請求項1〜6のいずれか一項に記載の熱硬化性樹脂組成物。
- (E)アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム及び無機中空粒子からなる群から選ばれる少なくとも1種の白色顔料を更に含有する、請求項1〜7のいずれか一項に記載の熱硬化性樹脂組成物。
- 前記白色顔料の中心粒径が0.1μm〜50μmである、請求項8に記載の熱硬化性樹脂組成物。
- 前記白色顔料の含有率が、当該熱硬化性樹脂組成物全体に対して10体積%〜85体積%である、請求項8又は9に記載の熱硬化性樹脂組成物。
- 底面及び内周側面から構成される凹部を有するとともに、該内周側面を形成する樹脂成形品を有し、該底面が光半導体素子搭載領域である光半導体素子搭載用基板であって、
前記樹脂成形品が、請求項1〜10のいずれか一項に記載の熱硬化性樹脂組成物から形成することのできるものである、光半導体素子搭載用基板。 - 底面及び内周側面から構成される凹部を有するとともに、該内周側面を形成する樹脂成形品を有し、該底面が光半導体素子搭載領域である光半導体素子搭載用基板の製造方法であって、
請求項1〜10のいずれか一項に記載の熱硬化性樹脂組成物をトランスファー成形することにより前記樹脂成形品を形成する工程を備える、製造方法。 - 請求項11に記載の光半導体素子搭載用基板と、
当該光半導体素子搭載用基板の光半導体素子搭載領域に搭載された光半導体素子と、
前記光半導体素子を当該光半導体素子搭載用基板の凹部内で覆う封止樹脂層と、
を備える光半導体装置。
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