JP2010041021A5 - - Google Patents

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Publication number
JP2010041021A5
JP2010041021A5 JP2008292370A JP2008292370A JP2010041021A5 JP 2010041021 A5 JP2010041021 A5 JP 2010041021A5 JP 2008292370 A JP2008292370 A JP 2008292370A JP 2008292370 A JP2008292370 A JP 2008292370A JP 2010041021 A5 JP2010041021 A5 JP 2010041021A5
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JP
Japan
Prior art keywords
semiconductor layer
insulating film
silicon carbide
conductivity type
range
Prior art date
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Application number
JP2008292370A
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English (en)
Japanese (ja)
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JP5564781B2 (ja
JP2010041021A (ja
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Priority to JP2008292370A priority Critical patent/JP5564781B2/ja
Priority claimed from JP2008292370A external-priority patent/JP5564781B2/ja
Publication of JP2010041021A publication Critical patent/JP2010041021A/ja
Publication of JP2010041021A5 publication Critical patent/JP2010041021A5/ja
Application granted granted Critical
Publication of JP5564781B2 publication Critical patent/JP5564781B2/ja
Active legal-status Critical Current
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JP2008292370A 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法 Active JP5564781B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008292370A JP5564781B2 (ja) 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008177134 2008-07-07
JP2008177134 2008-07-07
JP2008292370A JP5564781B2 (ja) 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2010041021A JP2010041021A (ja) 2010-02-18
JP2010041021A5 true JP2010041021A5 (fr) 2010-04-02
JP5564781B2 JP5564781B2 (ja) 2014-08-06

Family

ID=42013194

Family Applications (1)

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JP2008292370A Active JP5564781B2 (ja) 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP5564781B2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2528098B1 (fr) * 2010-01-19 2019-01-02 Sumitomo Electric Industries, Ltd. Dispositif semi-conducteur en carbure de silicium, et procédé de fabrication correspondant
JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
WO2012014645A1 (fr) * 2010-07-29 2012-02-02 住友電気工業株式会社 Substrat en carbure de silicium, dispositif semi-conducteur, et procédés de fabrication associés
JP5524103B2 (ja) 2011-02-07 2014-06-18 株式会社東芝 半導体装置
JP2012253293A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP5017768B2 (ja) * 2004-05-31 2012-09-05 富士電機株式会社 炭化珪素半導体素子
JP2006210818A (ja) * 2005-01-31 2006-08-10 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
JP5157843B2 (ja) * 2007-12-04 2013-03-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP5298691B2 (ja) * 2008-07-31 2013-09-25 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

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