JP2010040616A - 電極形成方法および半導体素子 - Google Patents
電極形成方法および半導体素子 Download PDFInfo
- Publication number
- JP2010040616A JP2010040616A JP2008199161A JP2008199161A JP2010040616A JP 2010040616 A JP2010040616 A JP 2010040616A JP 2008199161 A JP2008199161 A JP 2008199161A JP 2008199161 A JP2008199161 A JP 2008199161A JP 2010040616 A JP2010040616 A JP 2010040616A
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- JP
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- Prior art keywords
- insulating film
- film
- electrode
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000005530 etching Methods 0.000 claims abstract description 53
- 239000000126 substance Substances 0.000 claims abstract description 34
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims description 10
- 238000003486 chemical etching Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 23
- 238000000926 separation method Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 49
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199161A JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199161A JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010040616A true JP2010040616A (ja) | 2010-02-18 |
| JP2010040616A5 JP2010040616A5 (https=) | 2010-12-16 |
Family
ID=42012880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008199161A Pending JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010040616A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012186336A (ja) * | 2011-03-07 | 2012-09-27 | Opnext Japan Inc | 窒化物半導体レーザ装置の製造方法 |
| JP2017208546A (ja) * | 2016-05-18 | 2017-11-24 | 東京エレクトロン株式会社 | Ｓｔｔ‐ｍｒａｍ積層体の加法的形成のための方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346330A (ja) * | 1989-07-06 | 1991-02-27 | Internatl Business Mach Corp <Ibm> | 金属を被着するための構造および方法 |
| JPH04129226A (ja) * | 1990-09-20 | 1992-04-30 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH04236423A (ja) * | 1991-01-21 | 1992-08-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH07153666A (ja) * | 1993-11-30 | 1995-06-16 | Nec Corp | パターン形成方法 |
| JPH1022453A (ja) * | 1996-07-04 | 1998-01-23 | Nec Corp | 半導体装置およびその製造方法 |
| JPH10303200A (ja) * | 1997-04-24 | 1998-11-13 | Siemens Ag | リフトオフ法による白金金属パターンの製造方法 |
-
2008
- 2008-08-01 JP JP2008199161A patent/JP2010040616A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346330A (ja) * | 1989-07-06 | 1991-02-27 | Internatl Business Mach Corp <Ibm> | 金属を被着するための構造および方法 |
| JPH04129226A (ja) * | 1990-09-20 | 1992-04-30 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH04236423A (ja) * | 1991-01-21 | 1992-08-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH07153666A (ja) * | 1993-11-30 | 1995-06-16 | Nec Corp | パターン形成方法 |
| JPH1022453A (ja) * | 1996-07-04 | 1998-01-23 | Nec Corp | 半導体装置およびその製造方法 |
| JPH10303200A (ja) * | 1997-04-24 | 1998-11-13 | Siemens Ag | リフトオフ法による白金金属パターンの製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012186336A (ja) * | 2011-03-07 | 2012-09-27 | Opnext Japan Inc | 窒化物半導体レーザ装置の製造方法 |
| JP2017208546A (ja) * | 2016-05-18 | 2017-11-24 | 東京エレクトロン株式会社 | Ｓｔｔ‐ｍｒａｍ積層体の加法的形成のための方法 |
| KR20170130311A (ko) * | 2016-05-18 | 2017-11-28 | 도쿄엘렉트론가부시키가이샤 | Stt mram 스택의 적층 형성을 위한 방법들 |
| US10109789B2 (en) | 2016-05-18 | 2018-10-23 | Tokyo Electron Limited | Methods for additive formation of a STT MRAM stack |
| KR101976261B1 (ko) * | 2016-05-18 | 2019-09-10 | 도쿄엘렉트론가부시키가이샤 | Stt mram 스택의 적층 형성을 위한 방법들 |
| US10665779B2 (en) | 2016-05-18 | 2020-05-26 | Tokyo Electron Limited | Methods for additive formation of a STT MRAM stack |
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