JP2010040616A5 - - Google Patents
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- Publication number
- JP2010040616A5 JP2010040616A5 JP2008199161A JP2008199161A JP2010040616A5 JP 2010040616 A5 JP2010040616 A5 JP 2010040616A5 JP 2008199161 A JP2008199161 A JP 2008199161A JP 2008199161 A JP2008199161 A JP 2008199161A JP 2010040616 A5 JP2010040616 A5 JP 2010040616A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- semiconductor substrate
- opening
- chemical solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 13
- 238000005530 etching Methods 0.000 claims 12
- 239000000126 substance Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000000149 penetrating effect Effects 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- 238000003486 chemical etching Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199161A JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199161A JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010040616A JP2010040616A (ja) | 2010-02-18 |
| JP2010040616A5 true JP2010040616A5 (https=) | 2010-12-16 |
Family
ID=42012880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008199161A Pending JP2010040616A (ja) | 2008-08-01 | 2008-08-01 | 電極形成方法および半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010040616A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5722082B2 (ja) * | 2011-03-07 | 2015-05-20 | ウシオオプトセミコンダクター株式会社 | 窒化物半導体レーザ装置の製造方法 |
| US10109789B2 (en) | 2016-05-18 | 2018-10-23 | Tokyo Electron Limited | Methods for additive formation of a STT MRAM stack |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5024896A (en) * | 1989-07-06 | 1991-06-18 | International Business Machines Corporation | Collimated metal deposition |
| JPH04129226A (ja) * | 1990-09-20 | 1992-04-30 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH04236423A (ja) * | 1991-01-21 | 1992-08-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2565119B2 (ja) * | 1993-11-30 | 1996-12-18 | 日本電気株式会社 | パターン形成方法 |
| JP2925006B2 (ja) * | 1996-07-04 | 1999-07-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| DE19717363C2 (de) * | 1997-04-24 | 2001-09-06 | Siemens Ag | Herstellverfahren für eine Platinmetall-Struktur mittels eines Lift-off-Prozesses und Verwendung des Herstellverfahrens |
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2008
- 2008-08-01 JP JP2008199161A patent/JP2010040616A/ja active Pending