JP2010040571A5 - - Google Patents

Download PDF

Info

Publication number
JP2010040571A5
JP2010040571A5 JP2008198477A JP2008198477A JP2010040571A5 JP 2010040571 A5 JP2010040571 A5 JP 2010040571A5 JP 2008198477 A JP2008198477 A JP 2008198477A JP 2008198477 A JP2008198477 A JP 2008198477A JP 2010040571 A5 JP2010040571 A5 JP 2010040571A5
Authority
JP
Japan
Prior art keywords
conductivity type
type impurity
region
fin
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008198477A
Other languages
English (en)
Japanese (ja)
Other versions
JP5329865B2 (ja
JP2010040571A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008198477A priority Critical patent/JP5329865B2/ja
Priority claimed from JP2008198477A external-priority patent/JP5329865B2/ja
Priority to US12/512,617 priority patent/US8004045B2/en
Publication of JP2010040571A publication Critical patent/JP2010040571A/ja
Priority to US13/185,221 priority patent/US8536000B2/en
Publication of JP2010040571A5 publication Critical patent/JP2010040571A5/ja
Application granted granted Critical
Publication of JP5329865B2 publication Critical patent/JP5329865B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008198477A 2007-07-27 2008-07-31 半導体装置及びその製造方法 Active JP5329865B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008198477A JP5329865B2 (ja) 2008-07-31 2008-07-31 半導体装置及びその製造方法
US12/512,617 US8004045B2 (en) 2007-07-27 2009-07-30 Semiconductor device and method for producing the same
US13/185,221 US8536000B2 (en) 2007-07-27 2011-07-18 Method for producing a semiconductor device have fin-shaped semiconductor regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008198477A JP5329865B2 (ja) 2008-07-31 2008-07-31 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2010040571A JP2010040571A (ja) 2010-02-18
JP2010040571A5 true JP2010040571A5 (cg-RX-API-DMAC10.html) 2011-08-11
JP5329865B2 JP5329865B2 (ja) 2013-10-30

Family

ID=42012845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008198477A Active JP5329865B2 (ja) 2007-07-27 2008-07-31 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP5329865B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
JP2015213183A (ja) * 2015-06-25 2015-11-26 インテル・コーポレーション 非プレーナ型トランジスタのフィン製造
JP7117354B2 (ja) * 2020-09-14 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、およびプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101160643B (zh) * 2005-05-12 2012-04-18 松下电器产业株式会社 等离子体掺入方法和等离子体掺入设备
KR101172853B1 (ko) * 2005-07-22 2012-08-10 삼성전자주식회사 반도체 소자의 형성 방법
US7494862B2 (en) * 2006-09-29 2009-02-24 Intel Corporation Methods for uniform doping of non-planar transistor structures
US7939388B2 (en) * 2006-10-25 2011-05-10 Panasonic Corporation Plasma doping method and plasma doping apparatus

Similar Documents

Publication Publication Date Title
CN103311124B (zh) 半导体器件及其制造方法
US8963258B2 (en) FinFET with bottom SiGe layer in source/drain
US8853008B1 (en) Counter-doped low-power FinFET
JP2005521265A5 (cg-RX-API-DMAC10.html)
JP2006502581A5 (cg-RX-API-DMAC10.html)
JP2009516361A5 (cg-RX-API-DMAC10.html)
US8097517B2 (en) Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS
JP2013513252A5 (cg-RX-API-DMAC10.html)
JP2008047602A5 (cg-RX-API-DMAC10.html)
JP2005317978A5 (cg-RX-API-DMAC10.html)
JP2008147415A5 (cg-RX-API-DMAC10.html)
JP5294192B2 (ja) 半導体装置及びその製造方法
CN107968124A (zh) 一种半导体器件结构及其制备方法
JP2012528484A5 (cg-RX-API-DMAC10.html)
JP2008199029A5 (cg-RX-API-DMAC10.html)
CN104037083A (zh) 一种半导体器件的制造方法
JP2016506082A5 (cg-RX-API-DMAC10.html)
CN104201203B (zh) 高耐压ldmos器件及其制造方法
JP2012049466A5 (cg-RX-API-DMAC10.html)
CN103515205B (zh) 一种FinFET沟道掺杂方法
CN108493250A (zh) 一种非对称线性峰值掺杂的黑磷场效应管
JP2005150267A5 (cg-RX-API-DMAC10.html)
CN103545200B (zh) 晶体管和晶体管的形成方法
JP5865751B2 (ja) 半導体装置及びその製造方法
CN106601677A (zh) 一种半导体器件及其制备方法、电子装置