JP2010021351A5 - - Google Patents

Download PDF

Info

Publication number
JP2010021351A5
JP2010021351A5 JP2008180287A JP2008180287A JP2010021351A5 JP 2010021351 A5 JP2010021351 A5 JP 2010021351A5 JP 2008180287 A JP2008180287 A JP 2008180287A JP 2008180287 A JP2008180287 A JP 2008180287A JP 2010021351 A5 JP2010021351 A5 JP 2010021351A5
Authority
JP
Japan
Prior art keywords
diffusion layer
conductive layer
impact diffusion
impregnated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008180287A
Other languages
English (en)
Japanese (ja)
Other versions
JP5268459B2 (ja
JP2010021351A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008180287A priority Critical patent/JP5268459B2/ja
Priority claimed from JP2008180287A external-priority patent/JP5268459B2/ja
Publication of JP2010021351A publication Critical patent/JP2010021351A/ja
Publication of JP2010021351A5 publication Critical patent/JP2010021351A5/ja
Application granted granted Critical
Publication of JP5268459B2 publication Critical patent/JP5268459B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008180287A 2008-07-10 2008-07-10 半導体装置 Expired - Fee Related JP5268459B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013097377A Division JP5877814B2 (ja) 2013-05-07 2013-05-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2010021351A JP2010021351A (ja) 2010-01-28
JP2010021351A5 true JP2010021351A5 (https=) 2011-06-02
JP5268459B2 JP5268459B2 (ja) 2013-08-21

Family

ID=41705957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008180287A Expired - Fee Related JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Country Status (1)

Country Link
JP (1) JP5268459B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841675B2 (en) * 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
JP6328973B2 (ja) * 2014-03-28 2018-05-23 三光合成株式会社 電磁波遮蔽板及び電磁波遮蔽板の製造方法
CN118483457A (zh) * 2024-04-11 2024-08-13 徐州领测半导体科技有限公司 一种具有位置校正功能的集成电路测试夹具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3938921B2 (ja) * 2003-07-30 2007-06-27 Ｔｄｋ株式会社 半導体ｉｃ内蔵モジュールの製造方法

Similar Documents

Publication Publication Date Title
JP2010153813A5 (ja) 発光装置
JP2010040522A5 (https=)
WO2008126738A1 (ja) インターポーザ
JP2011014888A5 (https=)
JP2010147281A5 (ja) 半導体装置
JP2010016362A5 (ja) 半導体装置の作製方法及び半導体装置
JP2009302517A5 (ja) 半導体装置
JP2010135777A5 (ja) 半導体装置
JP2008181493A5 (https=)
JP2010171443A5 (https=)
JP2010103502A5 (ja) 半導体装置
JP2010098304A5 (https=)
JP2007241999A5 (https=)
JP2008543016A5 (https=)
JP2013509247A5 (https=)
JP2010097212A5 (ja) 表示装置
WO2009008416A1 (ja) 半導体発光装置
JP2010103508A5 (ja) 半導体装置
JP2008182074A5 (https=)
JP2013541836A5 (https=)
JP2010021534A5 (https=)
WO2009013826A1 (ja) 半導体装置
TW200726335A (en) Substrate structure with capacitance component embedded therein and method for fabricating the same
JP2011249718A5 (https=)
JP2009276316A5 (https=)