JP5268459B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5268459B2
JP5268459B2 JP2008180287A JP2008180287A JP5268459B2 JP 5268459 B2 JP5268459 B2 JP 5268459B2 JP 2008180287 A JP2008180287 A JP 2008180287A JP 2008180287 A JP2008180287 A JP 2008180287A JP 5268459 B2 JP5268459 B2 JP 5268459B2
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor device
impact
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008180287A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010021351A5 (https=
JP2010021351A (ja
Inventor
欣聡 及川
晋吾 江口
光男 増山
正敏 片庭
博信 小路
昌孝 中田
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008180287A priority Critical patent/JP5268459B2/ja
Publication of JP2010021351A publication Critical patent/JP2010021351A/ja
Publication of JP2010021351A5 publication Critical patent/JP2010021351A5/ja
Application granted granted Critical
Publication of JP5268459B2 publication Critical patent/JP5268459B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
JP2008180287A 2008-07-10 2008-07-10 半導体装置 Expired - Fee Related JP5268459B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013097377A Division JP5877814B2 (ja) 2013-05-07 2013-05-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2010021351A JP2010021351A (ja) 2010-01-28
JP2010021351A5 JP2010021351A5 (https=) 2011-06-02
JP5268459B2 true JP5268459B2 (ja) 2013-08-21

Family

ID=41705957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008180287A Expired - Fee Related JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Country Status (1)

Country Link
JP (1) JP5268459B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841675B2 (en) * 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
JP6328973B2 (ja) * 2014-03-28 2018-05-23 三光合成株式会社 電磁波遮蔽板及び電磁波遮蔽板の製造方法
CN118483457A (zh) * 2024-04-11 2024-08-13 徐州领测半导体科技有限公司 一种具有位置校正功能的集成电路测试夹具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3938921B2 (ja) * 2003-07-30 2007-06-27 Tdk株式会社 半導体ic内蔵モジュールの製造方法

Also Published As

Publication number Publication date
JP2010021351A (ja) 2010-01-28

Similar Documents

Publication Publication Date Title
JP5581426B2 (ja) 半導体装置
JP6140244B2 (ja) 半導体装置
JP5380156B2 (ja) 半導体装置
JP5464914B2 (ja) 半導体装置の作製方法
JP5380154B2 (ja) 半導体装置
TWI475748B (zh) 半導體裝置及其製造方法
TWI442513B (zh) 半導體裝置的製造方法
JP5469972B2 (ja) 半導体装置
JP5675939B2 (ja) 構造体の作製方法
JP5779272B2 (ja) 半導体装置
JP5298216B2 (ja) 半導体装置
JP5877814B2 (ja) 半導体装置
JP5268459B2 (ja) 半導体装置
JP5306705B2 (ja) 半導体装置
JP5415713B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110415

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110415

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120731

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130430

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130507

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5268459

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees