JP2010016261A - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP2010016261A
JP2010016261A JP2008176167A JP2008176167A JP2010016261A JP 2010016261 A JP2010016261 A JP 2010016261A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2010016261 A JP2010016261 A JP 2010016261A
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JP
Japan
Prior art keywords
layer
nitride semiconductor
type
semiconductor laser
thickness
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Pending
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JP2008176167A
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English (en)
Japanese (ja)
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JP2010016261A5 (enExample
Inventor
Takeshi Kamikawa
剛 神川
Pablo Vaccaro
パブロ バッカロ
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Sharp Corp
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Sharp Corp
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Priority to JP2008176167A priority Critical patent/JP2010016261A/ja
Publication of JP2010016261A publication Critical patent/JP2010016261A/ja
Publication of JP2010016261A5 publication Critical patent/JP2010016261A5/ja
Pending legal-status Critical Current

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JP2008176167A 2008-07-04 2008-07-04 窒化物半導体レーザ素子 Pending JP2010016261A (ja)

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JP2008176167A JP2010016261A (ja) 2008-07-04 2008-07-04 窒化物半導体レーザ素子

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JP2008176167A JP2010016261A (ja) 2008-07-04 2008-07-04 窒化物半導体レーザ素子

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JP2010016261A true JP2010016261A (ja) 2010-01-21
JP2010016261A5 JP2010016261A5 (enExample) 2011-01-20

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080960A (ja) * 2008-09-24 2010-04-08 Palo Alto Research Center Inc 半導体発光デバイス
WO2011105136A1 (ja) * 2010-02-25 2011-09-01 三洋電機株式会社 半導体レーザ装置及び光装置
WO2012127778A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 窒化物半導体発光素子
EP2369697A3 (en) * 2010-03-25 2013-03-13 Nichia Corporation Semiconductor laser element and method of manufacturing thereof
JP2019201185A (ja) * 2018-05-18 2019-11-21 旭化成株式会社 レーザダイオード
JP2020129653A (ja) * 2019-02-08 2020-08-27 シャープ株式会社 発光素子及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319703A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
JP2004128502A (ja) * 2002-09-30 2004-04-22 Lumileds Lighting Us Llc トンネル接合を含む発光装置
JP2004289157A (ja) * 2003-03-20 2004-10-14 Xerox Corp レーザダイオード構造およびその製造方法
JP2006041491A (ja) * 2004-06-21 2006-02-09 Matsushita Electric Ind Co Ltd 半導体レーザ素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319703A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
JP2004128502A (ja) * 2002-09-30 2004-04-22 Lumileds Lighting Us Llc トンネル接合を含む発光装置
JP2004289157A (ja) * 2003-03-20 2004-10-14 Xerox Corp レーザダイオード構造およびその製造方法
JP2006041491A (ja) * 2004-06-21 2006-02-09 Matsushita Electric Ind Co Ltd 半導体レーザ素子及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080960A (ja) * 2008-09-24 2010-04-08 Palo Alto Research Center Inc 半導体発光デバイス
JP2015099944A (ja) * 2008-09-24 2015-05-28 パロ・アルト・リサーチ・センター・インコーポレーテッドＰａｌｏ Ａｌｔｏ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体発光デバイス
WO2011105136A1 (ja) * 2010-02-25 2011-09-01 三洋電機株式会社 半導体レーザ装置及び光装置
EP2369697A3 (en) * 2010-03-25 2013-03-13 Nichia Corporation Semiconductor laser element and method of manufacturing thereof
WO2012127778A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 窒化物半導体発光素子
CN103444021A (zh) * 2011-03-24 2013-12-11 松下电器产业株式会社 氮化物半导体发光元件
JPWO2012127778A1 (ja) * 2011-03-24 2014-07-24 パナソニック株式会社 窒化物半導体発光素子
US8942269B2 (en) 2011-03-24 2015-01-27 Panasonic Corporation Nitride semiconductor light-emitting device
CN103444021B (zh) * 2011-03-24 2016-04-27 松下知识产权经营株式会社 氮化物半导体发光元件
JP2019201185A (ja) * 2018-05-18 2019-11-21 旭化成株式会社 レーザダイオード
JP7185867B2 (ja) 2018-05-18 2022-12-08 旭化成株式会社 レーザダイオード
JP2020129653A (ja) * 2019-02-08 2020-08-27 シャープ株式会社 発光素子及びその製造方法

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