JP2009545878A - 電子デバイスが形成されたフレキシブル基板 - Google Patents
電子デバイスが形成されたフレキシブル基板 Download PDFInfo
- Publication number
- JP2009545878A JP2009545878A JP2009522771A JP2009522771A JP2009545878A JP 2009545878 A JP2009545878 A JP 2009545878A JP 2009522771 A JP2009522771 A JP 2009522771A JP 2009522771 A JP2009522771 A JP 2009522771A JP 2009545878 A JP2009545878 A JP 2009545878A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electronic device
- particulate material
- plastic material
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 239000000463 material Substances 0.000 claims abstract description 121
- 229920003023 plastic Polymers 0.000 claims abstract description 101
- 239000004033 plastic Substances 0.000 claims abstract description 99
- 239000011236 particulate material Substances 0.000 claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 107
- 239000010410 layer Substances 0.000 claims description 72
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 30
- 229940058401 polytetrafluoroethylene Drugs 0.000 claims description 30
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 29
- 239000011230 binding agent Substances 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- 239000004642 Polyimide Substances 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 17
- -1 polytetrafluoroethylene Polymers 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 230000003750 conditioning effect Effects 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 7
- 239000003086 colorant Substances 0.000 claims description 6
- 229920002313 fluoropolymer Polymers 0.000 claims description 6
- 239000004811 fluoropolymer Substances 0.000 claims description 6
- 229920001903 high density polyethylene Polymers 0.000 claims description 6
- 239000004700 high-density polyethylene Substances 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 229920001780 ECTFE Polymers 0.000 claims description 4
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 229920001230 polyarylate Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229920008285 Poly(ether ketone) PEK Polymers 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 238000003851 corona treatment Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 238000004049 embossing Methods 0.000 claims description 2
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 238000000608 laser ablation Methods 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002904 solvent Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 230000032798 delamination Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 1
- 229920013683 Celanese Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000005441 electronic device fabrication Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Thin Film Transistor (AREA)
- Laminated Bodies (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/461,080 US7678701B2 (en) | 2006-07-31 | 2006-07-31 | Flexible substrate with electronic devices formed thereon |
| PCT/US2007/016085 WO2008016479A1 (en) | 2006-07-31 | 2007-07-16 | Flexible substrate with electronic devices formed thereon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009545878A true JP2009545878A (ja) | 2009-12-24 |
| JP2009545878A5 JP2009545878A5 (OSRAM) | 2011-09-08 |
Family
ID=38669806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009522771A Pending JP2009545878A (ja) | 2006-07-31 | 2007-07-16 | 電子デバイスが形成されたフレキシブル基板 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7678701B2 (OSRAM) |
| EP (1) | EP2047513A1 (OSRAM) |
| JP (1) | JP2009545878A (OSRAM) |
| TW (1) | TW200814333A (OSRAM) |
| WO (1) | WO2008016479A1 (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010506400A (ja) * | 2006-10-03 | 2010-02-25 | イーストマン コダック カンパニー | 電子デバイス及びトレースを有するフレキシブル基板 |
| JP2019121734A (ja) * | 2018-01-10 | 2019-07-22 | 株式会社Joled | 半導体装置および表示装置 |
| KR102084519B1 (ko) * | 2019-07-16 | 2020-03-04 | 주식회사 오플렉스 | 자외선(uv) 경화형 점착제층을 포함하는 백플레이트 필름 및 이를 이용한 유기 발광 표시 장치 제조 방법 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7913381B2 (en) * | 2006-10-26 | 2011-03-29 | Carestream Health, Inc. | Metal substrate having electronic devices formed thereon |
| KR101408510B1 (ko) * | 2007-05-18 | 2014-06-17 | 삼성전자주식회사 | 표시소자용 연성기판 및 이를 이용한 디스플레이 소자 |
| US8502259B2 (en) | 2008-01-11 | 2013-08-06 | Industrial Technology Research Institute | Light emitting device |
| US8800138B2 (en) * | 2008-02-08 | 2014-08-12 | Carestream Health, Inc. | Method for conditioning a substrate surface for forming an electronic device thereon and resultant device |
| US20090200543A1 (en) * | 2008-02-08 | 2009-08-13 | Roger Stanley Kerr | Method of forming an electronic device on a substrate supported by a carrier and resultant device |
| US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
| TWI400673B (zh) * | 2009-02-18 | 2013-07-01 | Prime View Int Co Ltd | 可撓性顯示面板及其製作方法 |
| US8074349B2 (en) * | 2009-04-16 | 2011-12-13 | Carestream Health, Inc. | Magnetic hold-down for foil substrate processing |
| GB0909721D0 (en) * | 2009-06-05 | 2009-07-22 | Plastic Logic Ltd | Dielectric seed layer |
| TWI387138B (zh) * | 2009-07-10 | 2013-02-21 | Ind Tech Res Inst | 磁性發光元件、磁性發光裝置以及氮化物半導體模板 |
| EP2404650A1 (de) * | 2010-07-09 | 2012-01-11 | Bayer MaterialScience AG | Vorrichtung und Verfahren zur Fest-/Flüssig-Trennung von Fest-Flüssig-Suspensionen |
| WO2012043971A2 (ko) * | 2010-09-29 | 2012-04-05 | 포항공과대학교 산학협력단 | 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
| USRE49869E1 (en) * | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
| KR20160127892A (ko) * | 2015-04-27 | 2016-11-07 | 삼성디스플레이 주식회사 | 플렉서블 기판 및 이를 포함하는 표시 장치 |
| KR102346037B1 (ko) | 2017-04-04 | 2021-12-31 | 더블유.엘.고어 앤드 어소시에이츠 게엠베하 | 강화된 엘라스토머 및 통합된 전극을 갖는 유전체 복합재 |
| KR20210006963A (ko) | 2018-05-08 | 2021-01-19 | 더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드 | 신장성 및 비신장성 기재 상의 내구성 있는 연성 인쇄 회로 |
| WO2019216883A1 (en) | 2018-05-08 | 2019-11-14 | W.L. Gore & Associates, Inc. | Flexible printed circuits for dermal applications |
| AU2018422666B2 (en) | 2018-05-08 | 2022-03-10 | W. L. Gore & Associates, Inc. | Flexible and stretchable printed circuits on stretchable substrates |
| CN109285462B (zh) * | 2018-12-12 | 2021-04-20 | 武汉天马微电子有限公司 | 柔性显示面板及其制作方法、柔性显示装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2004515081A (ja) * | 2000-11-30 | 2004-05-20 | インフィネオン テクノロジーズ アクチェンゲゼルシャフト | 半導体層を有する基板、電子素子、電子回路、印刷可能な組成物および製作する方法 |
| JP2004200365A (ja) * | 2002-12-18 | 2004-07-15 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子 |
| US20050163968A1 (en) * | 2004-01-20 | 2005-07-28 | Hanket Gregory M. | Microfiller-reinforced polymer film |
| JP2005210081A (ja) * | 2003-12-02 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 電子機器、半導体装置およびその作製方法 |
| JP2006013480A (ja) * | 2004-05-28 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
| JP2006100662A (ja) * | 2004-09-30 | 2006-04-13 | Sony Corp | 薄膜半導体装置の製造方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5237436A (en) * | 1990-12-14 | 1993-08-17 | North American Philips Corporation | Active matrix electro-optic display device with light shielding layer and projection and color employing same |
| US5891552A (en) * | 1996-01-04 | 1999-04-06 | Mobil Oil Corporation | Printed plastic films and method of thermal transfer printing |
| US5817550A (en) * | 1996-03-05 | 1998-10-06 | Regents Of The University Of California | Method for formation of thin film transistors on plastic substrates |
| US6492026B1 (en) * | 2000-04-20 | 2002-12-10 | Battelle Memorial Institute | Smoothing and barrier layers on high Tg substrates |
| CA2410238A1 (en) * | 2000-06-19 | 2001-12-27 | Carlton Brooks | Methods and devices for enhancing bonded substrate yields and regulating temperature |
| US6762124B2 (en) * | 2001-02-14 | 2004-07-13 | Avery Dennison Corporation | Method for patterning a multilayered conductor/substrate structure |
| US7535624B2 (en) * | 2001-07-09 | 2009-05-19 | E Ink Corporation | Electro-optic display and materials for use therein |
| US7110163B2 (en) * | 2001-07-09 | 2006-09-19 | E Ink Corporation | Electro-optic display and lamination adhesive for use therein |
| JP2003045234A (ja) * | 2001-07-26 | 2003-02-14 | Dainippon Printing Co Ltd | 透明導電性フィルム |
| TWI308231B (en) * | 2001-08-28 | 2009-04-01 | Sipix Imaging Inc | Electrophoretic display |
| US20030193796A1 (en) * | 2002-04-15 | 2003-10-16 | Heeks Stephen K. | Light-emitting devices |
| US7223672B2 (en) * | 2002-04-24 | 2007-05-29 | E Ink Corporation | Processes for forming backplanes for electro-optic displays |
| EP1362682A1 (en) * | 2002-05-13 | 2003-11-19 | ZBD Displays Ltd, | Method and apparatus for liquid crystal alignment |
| TWI330269B (en) * | 2002-12-27 | 2010-09-11 | Semiconductor Energy Lab | Separating method |
| US20050216075A1 (en) * | 2003-04-08 | 2005-09-29 | Xingwu Wang | Materials and devices of enhanced electromagnetic transparency |
| JP4233433B2 (ja) * | 2003-11-06 | 2009-03-04 | シャープ株式会社 | 表示装置の製造方法 |
| KR100798537B1 (ko) * | 2003-12-26 | 2008-01-28 | 토요 보세키 가부시기가이샤 | 폴리이미드 필름 |
| US8053171B2 (en) * | 2004-01-16 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television |
| WO2005093864A1 (ja) * | 2004-03-25 | 2005-10-06 | National Institute Of Advanced Industrial Science And Technology | 熱電変換素子及び熱電変換モジュール |
| EP1791185A1 (en) * | 2004-07-27 | 2007-05-30 | Quantum 14 KK | Light-emitting element, light-emitting device and information display |
| US7582904B2 (en) * | 2004-11-26 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and method for manufacturing thereof, and television device |
| US20060180890A1 (en) * | 2005-01-18 | 2006-08-17 | Naugler W E Jr | Top emission flat panel display with sensor feedback stabilization |
| TWI408734B (zh) * | 2005-04-28 | 2013-09-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| TWI402935B (zh) * | 2005-05-17 | 2013-07-21 | Koninkl Philips Electronics Nv | 彩色主動矩陣顯示器 |
| US8097112B2 (en) * | 2005-06-20 | 2012-01-17 | Panasonic Corporation | Method for manufacturing membrane-electrode assembly |
| KR101102152B1 (ko) * | 2005-06-28 | 2012-01-02 | 삼성전자주식회사 | 유기박막 트랜지스터의 제조방법 및 그에 의해 제조된유기박막 트랜지스터 |
| US20070002199A1 (en) * | 2005-06-30 | 2007-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| US20070007579A1 (en) * | 2005-07-11 | 2007-01-11 | Matrix Semiconductor, Inc. | Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region |
| GB2430547A (en) | 2005-09-20 | 2007-03-28 | Seiko Epson Corp | A method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface |
| US7235736B1 (en) * | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
-
2006
- 2006-07-31 US US11/461,080 patent/US7678701B2/en not_active Expired - Fee Related
-
2007
- 2007-07-16 JP JP2009522771A patent/JP2009545878A/ja active Pending
- 2007-07-16 WO PCT/US2007/016085 patent/WO2008016479A1/en not_active Ceased
- 2007-07-16 EP EP07796875A patent/EP2047513A1/en not_active Withdrawn
- 2007-07-30 TW TW096127807A patent/TW200814333A/zh unknown
-
2010
- 2010-02-01 US US12/697,522 patent/US7964507B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
| JP2004515081A (ja) * | 2000-11-30 | 2004-05-20 | インフィネオン テクノロジーズ アクチェンゲゼルシャフト | 半導体層を有する基板、電子素子、電子回路、印刷可能な組成物および製作する方法 |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2004200365A (ja) * | 2002-12-18 | 2004-07-15 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子 |
| JP2005210081A (ja) * | 2003-12-02 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 電子機器、半導体装置およびその作製方法 |
| US20050163968A1 (en) * | 2004-01-20 | 2005-07-28 | Hanket Gregory M. | Microfiller-reinforced polymer film |
| JP2006013480A (ja) * | 2004-05-28 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
| JP2006100662A (ja) * | 2004-09-30 | 2006-04-13 | Sony Corp | 薄膜半導体装置の製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010506400A (ja) * | 2006-10-03 | 2010-02-25 | イーストマン コダック カンパニー | 電子デバイス及びトレースを有するフレキシブル基板 |
| JP2019121734A (ja) * | 2018-01-10 | 2019-07-22 | 株式会社Joled | 半導体装置および表示装置 |
| KR102084519B1 (ko) * | 2019-07-16 | 2020-03-04 | 주식회사 오플렉스 | 자외선(uv) 경화형 점착제층을 포함하는 백플레이트 필름 및 이를 이용한 유기 발광 표시 장치 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008016479A1 (en) | 2008-02-07 |
| US20080026581A1 (en) | 2008-01-31 |
| TW200814333A (en) | 2008-03-16 |
| US20100136777A1 (en) | 2010-06-03 |
| US7964507B2 (en) | 2011-06-21 |
| US7678701B2 (en) | 2010-03-16 |
| EP2047513A1 (en) | 2009-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7964507B2 (en) | Flexible substrate with electronic devices formed thereon | |
| US8288214B2 (en) | Flexible substrate with electronic devices and traces | |
| KR100494479B1 (ko) | 액티브 매트릭스 기판의 제조 방법 | |
| TWI433779B (zh) | 顯示面板用柔性基板及該柔性基板的製造方法 | |
| US7951726B2 (en) | Organic/inorganic hybrid thin film passivation layer for blocking moisture/oxygen transmission and improving gas barrier property | |
| KR20080101488A (ko) | 표시소자용 연성기판 및 이를 이용한 디스플레이 소자 | |
| JP5689258B2 (ja) | フレキシブルtft基板の製造方法 | |
| CN103579531B (zh) | 在聚合物基材表面形成可以剥离的弹性体掩模板的方法 | |
| US9118037B2 (en) | Method of manufacturing flexible substrate and method of manufacturing display device using the same | |
| TW201218147A (en) | Method for producing transparent substrate | |
| Kong et al. | Transparent omni‐directional stretchable circuit lines made by a junction‐free grid of expandable Au lines | |
| CN109244238B (zh) | 用于显示面板的柔性基板及其制作方法 | |
| JP2008262955A (ja) | 半導体装置とその製造方法 | |
| US9627420B2 (en) | Method for forming an electronic device on a flexible substrate supported by a detachable carrier | |
| CN105242799A (zh) | 曲面触控显示模组及可穿戴设备 | |
| US11539008B2 (en) | Multi-layer film, display panel and manufacturing method thereof, and display apparatus | |
| CN114455857B (zh) | 透明导电玻璃及其表面电阻降低方法 | |
| KR102187498B1 (ko) | 전자 소자의 제조 방법 | |
| KR101588104B1 (ko) | 배향된 탄소 구조체를 갖는 복합 필름 및 그 제조 방법 | |
| JP2007201056A (ja) | 薄膜トランジスタ及びその製造方法 | |
| CN204375752U (zh) | 触控泡棉结构及显示组件 | |
| KR101292948B1 (ko) | 플라스틱 디스플레이 기판의 제조방법 | |
| KR102003974B1 (ko) | 유기반도체의 용액공정에 적용되는 선택적 박막 형성 방법, 이에 사용되는 도포방지 필름 및 용액공정을 적용한 oled 조명의 제조방법 | |
| KR20100098319A (ko) | 가요성 기판 상에 전자 장치를 형성하기 위한 방법 및 전자 장치 | |
| JP2010251361A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100716 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100716 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110713 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121210 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130521 |