JP2009545878A - 電子デバイスが形成されたフレキシブル基板 - Google Patents

電子デバイスが形成されたフレキシブル基板 Download PDF

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Publication number
JP2009545878A
JP2009545878A JP2009522771A JP2009522771A JP2009545878A JP 2009545878 A JP2009545878 A JP 2009545878A JP 2009522771 A JP2009522771 A JP 2009522771A JP 2009522771 A JP2009522771 A JP 2009522771A JP 2009545878 A JP2009545878 A JP 2009545878A
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JP
Japan
Prior art keywords
substrate
electronic device
particulate material
plastic material
thin film
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JP2009522771A
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English (en)
Japanese (ja)
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JP2009545878A5 (OSRAM
Inventor
ティモシー ジョン トレッドウェル
ロジャー スタンリー カー
Original Assignee
イーストマン コダック カンパニー
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Publication of JP2009545878A publication Critical patent/JP2009545878A/ja
Publication of JP2009545878A5 publication Critical patent/JP2009545878A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6758Thin-film transistors [TFT] characterised by the insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0212Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009522771A 2006-07-31 2007-07-16 電子デバイスが形成されたフレキシブル基板 Pending JP2009545878A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/461,080 US7678701B2 (en) 2006-07-31 2006-07-31 Flexible substrate with electronic devices formed thereon
PCT/US2007/016085 WO2008016479A1 (en) 2006-07-31 2007-07-16 Flexible substrate with electronic devices formed thereon

Publications (2)

Publication Number Publication Date
JP2009545878A true JP2009545878A (ja) 2009-12-24
JP2009545878A5 JP2009545878A5 (OSRAM) 2011-09-08

Family

ID=38669806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009522771A Pending JP2009545878A (ja) 2006-07-31 2007-07-16 電子デバイスが形成されたフレキシブル基板

Country Status (5)

Country Link
US (2) US7678701B2 (OSRAM)
EP (1) EP2047513A1 (OSRAM)
JP (1) JP2009545878A (OSRAM)
TW (1) TW200814333A (OSRAM)
WO (1) WO2008016479A1 (OSRAM)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506400A (ja) * 2006-10-03 2010-02-25 イーストマン コダック カンパニー 電子デバイス及びトレースを有するフレキシブル基板
JP2019121734A (ja) * 2018-01-10 2019-07-22 株式会社Joled 半導体装置および表示装置
KR102084519B1 (ko) * 2019-07-16 2020-03-04 주식회사 오플렉스 자외선(uv) 경화형 점착제층을 포함하는 백플레이트 필름 및 이를 이용한 유기 발광 표시 장치 제조 방법

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KR102346037B1 (ko) 2017-04-04 2021-12-31 더블유.엘.고어 앤드 어소시에이츠 게엠베하 강화된 엘라스토머 및 통합된 전극을 갖는 유전체 복합재
KR20210006963A (ko) 2018-05-08 2021-01-19 더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드 신장성 및 비신장성 기재 상의 내구성 있는 연성 인쇄 회로
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CN109285462B (zh) * 2018-12-12 2021-04-20 武汉天马微电子有限公司 柔性显示面板及其制作方法、柔性显示装置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506400A (ja) * 2006-10-03 2010-02-25 イーストマン コダック カンパニー 電子デバイス及びトレースを有するフレキシブル基板
JP2019121734A (ja) * 2018-01-10 2019-07-22 株式会社Joled 半導体装置および表示装置
KR102084519B1 (ko) * 2019-07-16 2020-03-04 주식회사 오플렉스 자외선(uv) 경화형 점착제층을 포함하는 백플레이트 필름 및 이를 이용한 유기 발광 표시 장치 제조 방법

Also Published As

Publication number Publication date
WO2008016479A1 (en) 2008-02-07
US20080026581A1 (en) 2008-01-31
TW200814333A (en) 2008-03-16
US20100136777A1 (en) 2010-06-03
US7964507B2 (en) 2011-06-21
US7678701B2 (en) 2010-03-16
EP2047513A1 (en) 2009-04-15

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