JP2009543375A - 金属含有基材のためのcmp法 - Google Patents
金属含有基材のためのcmp法 Download PDFInfo
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- JP2009543375A JP2009543375A JP2009519467A JP2009519467A JP2009543375A JP 2009543375 A JP2009543375 A JP 2009543375A JP 2009519467 A JP2009519467 A JP 2009519467A JP 2009519467 A JP2009519467 A JP 2009519467A JP 2009543375 A JP2009543375 A JP 2009543375A
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- 229910052715 tantalum Inorganic materials 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
この実施例は、タングステンCMPスラリー配合物で用いる負に帯電した粒子を調製する一つの方法を説明する。ヒュームド・シリカ粒子の14.4%懸濁液の29.45gのアリコートを脱イオン水中に懸濁させて、全体体積247.5ml中の最終濃度1.72重量%粒子を得た。次に、硝酸アルミニウム(Al(NO3)3・9H2O)0.1M溶液2.5mlを懸濁液に添加した。水酸化アンモニウム溶液(29%)を添加することにより混合物のpHを6.0に上げ、混合物を攪拌下6時間にわたり放置した。粒子のゼータ電位を、マルバーン・ゼータ・マスター3000(英国ウースターシャーのマルバーン・インスツルメンツ)を用いて経時的に記録した。ゼータ電位を測定するために混合物の数滴を除去し、硝酸を用いて2.3にpH調整された水系溶液に添加した。−5.5mVのゼータ電位が得られ(図1)、アルミノケイ酸塩層が形成されることを示した(pH2.3でのシリカのゼータ電位はゼロである)。混合物のpHを29%水酸化アンモニウム溶液により7.5に上げた。これは、粒子電荷が直ちに−8mVまで、および24時間後には約−20mVまで落ちる結果をもたらした(図1)。
この実施例は、pHを調整することによる、シリカ粒子上のアルミノケイ酸塩層の厚さおよび電荷密度、従って粒子電荷を制御するための能力を説明する。29%水酸化アンモニウム溶液を用いてpHを7.5の代わりに9.0まで上げることを除いて、粒子を実施例1に記載されるように処理した。24時間後、粒子のゼータ電位は−30mV(pH2.3で測定して)であった。
この実施例は、本発明の粒子を用いての除去速度に与える影響を実証する。
下向き力 5psi
背圧 0psi
プラテン速度 60rpm
担体速度 40rpm
この実施例は、タングステンパターンウエハーにおける酸化腐食に与える本発明の研磨剤粒子の影響を実証する。
この実施例は、タングステン除去速度および腐食に与える粒子安定性の影響を示す。
この実施例は、本発明の表面改質された粒子が、化学機械研磨後、基材上のタングステン線に対する有意に減じた接着度を有することを実証する。
プラテン速度 100rpm
担体速度 55rpm
副担体圧力 225hPa(3.1psi)
裏側圧力 225hPa(3.1psi)
リング圧力 200hPa(2.7psi)
スラリー流 150ml/分
Claims (20)
- a.少なくとも一つの酸化剤
b.多酸化状態を有する少なくとも一つの触媒、および
c.研磨剤粒子がpH2.3で測定される約−5mV〜約−100mVのゼータ電位を有し、アルミノケイ酸塩層により改質された一次粒子から本質的になる研磨剤粒子を含む研磨剤、
を含む化学機械研磨組成物。 - 研磨剤粒子が約−10mV〜約−50mVのゼータ電位を有する請求項1に記載の組成物。
- 一次粒子がシリカ、アルミナ、セリア、およびクレーからなる群から選択される請求項1に記載の組成物。
- 一次粒子がシリカである請求項3に記載の組成物。
- 酸化剤が過酸化水素である請求項1に記載の組成物。
- 過酸化水素濃度が組成物の約1重量%〜約6重量%である請求項5に記載の組成物。
- 研磨剤粒子濃度が組成物の約0.05重量%〜約4重量%である請求項1に記載の組成物。
- シリカがヒュームド・シリカである請求項4に記載の組成物。
- 触媒が硝酸第二鉄である請求項1に記載の組成物。
- 触媒が酸化剤と反応することを抑制する安定剤をさらに含む請求項1に記載の組成物。
- 安定剤がマロン酸である請求項10に記載の組成物。
- (i)タングステンを含む基材を提供し、
(ii)(a)少なくとも一つの酸化剤
(b)多酸化状態を有する少なくとも一つの触媒、および
(c)研磨剤粒子がpH2.3で測定される約−5mV〜約−100mVのゼータ電位を有し、アルミノケイ酸塩層により改質された一次粒子から本質的になる研磨剤粒子を含む研磨剤、
を含む研磨組成物を提供し、
(iii)基材を研磨パッドおよび研磨組成物と接触させ、
(iv)基材を研磨パッドおよび研磨組成物に対して動かし、および
(v)基材の少なくとも一部を薄く削って基材を研磨すること、
を含む、化学機械研磨法。 - 研磨剤粒子が約−10mV〜約−50mVのゼータ電位を有する請求項12に記載の方法。
- 一次粒子がシリカを含む請求項12に記載の方法。
- 酸化剤が過酸化水素である請求項12に記載の方法。
- 過酸化水素濃度が研磨組成物の約1重量%〜約5重量%である請求項15に記載の方法。
- 研磨剤粒子濃度が組成物の約0.05重量%〜約4重量%である請求項12に記載の方法。
- 研磨剤粒子がpH2.3で測定される約−5mV〜約−100mVのゼータ電位を有し、アルミノケイ酸塩層を有するシリカ粒子を含む化学機械研磨で用いる研磨剤粒子。
- pH2.3で測定される約−10mV〜約−50mVのゼータ電位を有する請求項18に記載の研磨剤粒子。
- シリカ粒子がヒュームド・シリカである請求項18に記載の研磨剤粒子。
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