JP2009533865A - 集積回路および回路ボードのダイレクト・チップ・アタッチ結合構成における熱エネルギーの消散を改善するための方法および装置 - Google Patents
集積回路および回路ボードのダイレクト・チップ・アタッチ結合構成における熱エネルギーの消散を改善するための方法および装置 Download PDFInfo
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Abstract
Description
Claims (20)
- 1つまたは複数の電気接続部、およびその中に形成された空隙を含む回路ボード(CB)と、
前記CBの側面に実装され、1つまたは複数の電気回路、および1つまたは複数の電気接続部を含む集積回路(IC)ダイであって、前記CB上の前記電気接続部のうちの少なくとも1つが、前記ダイ上の前記電気接続部のうちの少なくとも1つと接触する、ダイと、
第1の端部および第2の端部を有し、前記空隙内に少なくとも部分的に配置されている高熱伝導性(HTC)素子であって、それにより、前記HTC素子の前記第1の端部が前記ダイに熱的に結合され、前記HTC素子の前記第2の端部が前記空隙の下で前記CBの一部分に熱的に結合される、HTC素子と、
を備えるCBアセンブリ。 - 前記ダイが、ダイレクト・チップ・アタッチ構成で前記CBに実装される、請求項1に記載のCBアセンブリ。
- 前記CBが単一層のCBである、請求項1に記載のCBアセンブリ。
- 前記CBが、
第1の側面および第2の側面を含む第1の層であって、前記ダイが前記第1の層の前記第1の側面に隣接して取り付けられる、第1の層と、
前記第1の層の前記第2の側面に隣接して配置される硬化剤層と、を含み、
前記空隙が少なくとも前記第1の層から前記硬化剤層に下方に延在し、前記HTC素子の前記第2の端部が前記硬化剤層と接触し、前記硬化剤層が高熱伝導性材料を含む、請求項1に記載のCBアセンブリ。 - 前記HTC素子が熱的伝導性エラストマを含む、請求項1に記載のCBアセンブリ。
- 前記HTC素子が熱可塑性物質を含む、請求項1に記載のCBアセンブリ。
- 前記HTC素子が金属を含む、請求項1に記載のCBアセンブリ。
- 前記金属が半田である、請求項7に記載のCBアセンブリ。
- 改善された熱消散を有する回路ボード(CB)アセンブリを形成するための方法であって、
1つまたは複数の電気回路、およびその上に形成された1つまたは複数の電気接続部を有するダイを形成することと、
1つまたは複数の電気接続部、およびその中に形成された空隙を有するCBを形成することと、
前記ダイ上の前記電気接続部のうちの少なくとも1つが、前記CB上の前記電気接続部のうちの少なくとも1つと接触するように、前記ダイを前記CB上に実装することと、を含み、
前記ダイが前記CB上に実装される場合、HTC素子の少なくとも一部分は前記空隙内に位置し、それにより、前記HTC素子の第1の端部は前記ダイに熱的に結合され、前記HTC素子の第2の端部は前記CBの一部分と熱的に結合される、方法。 - 前記HTC素子の前記第1の端部は、前記ダイがウエハの一部である場合、成形工程によって前記ダイに熱的に結合される、請求項9に記載の方法。
- 前記HTC素子の前記第1の端部は、前記ダイがウエハから切断された後に、成形工程によって前記ダイに熱的に結合される、請求項9に記載の方法。
- 前記HTC素子の前記第2の端部が前記CBの硬化剤の表面と熱的に結合される、請求項10に記載の方法。
- 前記HTC素子が熱的伝導性エラストマを含む、請求項9に記載の方法。
- 前記HTC素子が熱可塑性物質を含む、請求項9に記載の方法。
- 前記HTC素子が金属を含む、請求項9に記載の方法。
- 前記金属が半田を含み、前記HTC素子は、半田バンプ工程が行われた場合、前記ダイと熱的に結合される、請求項15に記載の方法。
- 前記HTCデバイスが、前記ダイを前記CB上に実装する前に、前記ダイに熱的に結合される、請求項9に記載の方法。
- 前記HTCデバイスが、前記ダイを前記CB上に実装する前に、前記CBの前記一部分と熱的に結合される、請求項9に記載の方法。
- 1つまたは複数の電気接続部、およびその中に形成された空隙を含む回路ボード(CB)と、
前記CBの側面に実装され、1つまたは複数の電気回路、および1つまたは複数の電気接続部を含む集積回路(IC)ダイであって、前記CB上の前記電気接続部のうちの少なくとも1つが前記ダイ上の前記電気接続部のうちの少なくとも1つと接触する、ダイと、
第1の端部および第2の端部を有し、前記空隙内に少なくとも部分的に配置されている高熱伝導性(HTC)素子であって、それにより、前記HTC素子の前記第1の端部が、前記ダイに取り付けられ、前記HTC素子の前記第2の端部が、前記空隙の下で前記CBの一部分に取り付けられ、または極めて接近している、HTC素子と、
を備えるCBアセンブリ。 - 改善された熱消散を有する回路ボード(CB)アセンブリを形成するための方法であって、
1つまたは複数の電気回路、およびその上に形成された1つまたは複数の電気接続部を有するダイを形成することと、
1つまたは複数の電気接続部、およびその中に形成された空隙を有するCBを形成することと、
前記ダイ上の前記電気接続部のうちの少なくとも1つが、前記CB上の前記電気接続部のうちの少なくとも1つと接触するように、前記ダイを前記CB上に実装することと、を含み、
前記ダイが前記CB上に実装される場合、HTC素子の少なくとも一部分は前記空隙内に位置し、それにより、前記HTC素子の第1の端部は、前記ダイに取り付けられ、前記HTC素子の第2の端部は、前記CBの一部分に取り付けられ、または極めて接近している、方法。
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PCT/US2006/014009 WO2007120124A1 (en) | 2006-04-14 | 2006-04-14 | Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board |
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Citations (5)
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JPH05109943A (ja) * | 1991-10-21 | 1993-04-30 | Fujitsu Ltd | 集積回路の冷却構造 |
JPH05243415A (ja) * | 1992-02-26 | 1993-09-21 | Sony Corp | 配線基板 |
JP2003046022A (ja) * | 2001-05-22 | 2003-02-14 | Hitachi Ltd | 電子装置 |
JP2003200535A (ja) * | 2001-10-25 | 2003-07-15 | Matsushita Electric Ind Co Ltd | プリプレグおよび回路基板、ならびにそれらの製造方法 |
JP2004039732A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 高周波回路基板及びそれを用いた半導体装置 |
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JP2000012723A (ja) * | 1998-06-23 | 2000-01-14 | Nitto Denko Corp | 回路基板の実装構造体およびそれに用いる多層回路基板 |
JP3446826B2 (ja) * | 2000-04-06 | 2003-09-16 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US6744135B2 (en) * | 2001-05-22 | 2004-06-01 | Hitachi, Ltd. | Electronic apparatus |
US7199466B2 (en) * | 2004-05-03 | 2007-04-03 | Intel Corporation | Package design using thermal linkage from die to printed circuit board |
US7453157B2 (en) * | 2004-06-25 | 2008-11-18 | Tessera, Inc. | Microelectronic packages and methods therefor |
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2006
- 2006-04-14 WO PCT/US2006/014009 patent/WO2007120124A1/en active Application Filing
- 2006-04-14 KR KR1020087024806A patent/KR101212473B1/ko not_active IP Right Cessation
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109943A (ja) * | 1991-10-21 | 1993-04-30 | Fujitsu Ltd | 集積回路の冷却構造 |
JPH05243415A (ja) * | 1992-02-26 | 1993-09-21 | Sony Corp | 配線基板 |
JP2003046022A (ja) * | 2001-05-22 | 2003-02-14 | Hitachi Ltd | 電子装置 |
JP2003200535A (ja) * | 2001-10-25 | 2003-07-15 | Matsushita Electric Ind Co Ltd | プリプレグおよび回路基板、ならびにそれらの製造方法 |
JP2004039732A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 高周波回路基板及びそれを用いた半導体装置 |
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