WO2007120124A1 - Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board - Google Patents
Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board Download PDFInfo
- Publication number
- WO2007120124A1 WO2007120124A1 PCT/US2006/014009 US2006014009W WO2007120124A1 WO 2007120124 A1 WO2007120124 A1 WO 2007120124A1 US 2006014009 W US2006014009 W US 2006014009W WO 2007120124 A1 WO2007120124 A1 WO 2007120124A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
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- H01L23/367—Cooling facilitated by shape of device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41L—APPARATUS OR DEVICES FOR MANIFOLDING, DUPLICATING OR PRINTING FOR OFFICE OR OTHER COMMERCIAL PURPOSES; ADDRESSING MACHINES OR LIKE SERIES-PRINTING MACHINES
- B41L1/00—Devices for performing operations in connection with manifolding by means of pressure-sensitive layers or intermediaries, e.g. carbons; Accessories for manifolding purposes
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Definitions
- the present invention relates to circuit boards (CBs), and more particularly, to dissipating thermal energy generated by an integrated circuit (IC) mounted on a CB.
- CBs circuit boards
- IC integrated circuit
- Typical IC packages usually include an enclosed and/or encapsulated plastic housing with an internal lead frame, bond wires and die, as well as external electrical leads for electrically connecting the die to the outside world.
- IC packages that house higher thermal dissipation die have an additional integral heat sink formed within the package that is connected to the IC substrate.
- the heat sink typically comprises a metal layer.
- a die is usually mounted on this metal layer with its electrical contact pads face up and bond wires connecting the electrical contact pads of the die to the internal lead frame of the IC package.
- the lead frame provides a mechanically rigid electrical path from the die and the bond wires to the external electrical leads of the IC package.
- the lead frame is usually molded partially within the plastic housing in order to bridge the electrical connection between the internal lead frame and the external leads.
- the electrical leads make the electrical connection from the package to a circuit board (CB) on which the package is mounted.
- CB circuit board
- a heat spreader device on the CB located directly underneath the IC package is thermally connected to the heat sink of the IC package and then to a ground plane within the layers of the CB, which is typically a printed circuit board (PCB) layers.
- the heat spreader device dissipates heat generated by the IC into the CB ground plane itself. Heat generated by the IC is also convectively moved away from the IC package out to the surrounding air.
- PCB printed circuit board
- the IC package is eliminated and the die is mounted directly to the CB in an inverted position such that the electrical contact pads on the die face downward toward the confronting circuit traces on the CB, and are electrically connected by electrical interconnects (e.g., solder bumps) that connect the contact pads of the die to the circuit traces on the CB.
- electrical interconnects e.g., solder bumps
- the CB used in a direct-chip-attach configuration is usually a physically flexible PCB and is known as a flex CB or flex circuit. Because of its flexibility, the flex CB can be shaped into a small physical area, while still maintaining the electrical contact between the CB and the die.
- FIG. 1 illustrates a perspective view of a typical direct-chip-attach assembly 11, which includes a flex CB comprising various layers 12 and an IC die 13 mounted on the flex CB 12.
- the IC die 13 is mounted to the flex CB 12 in a confronting position such that electrical contact pads (not shown) on the die 13 are disposed to be easily connected by electrical interconnects (e.g., solder bumps) 19 to the circuit traces (not shown) on the flex CB 12.
- electrical interconnects e.g., solder bumps
- the flex CB 12 may include a heat sink material 14 that is in contact with the side of the CB 12 that is opposite the die 13, a layer 15 of adhesive and thermally insulating dielectric material (e.g., polyimid) disposed on the heat sink material 14, a metal layer 16 disposed on layer 15, and a layer 17 of thermally insulating dielectric material (e.g., polyimid) disposed on the metal layer 16.
- the aforementioned circuit traces are formed by portions of the metal layer 16 of the flex CB 12, which is typically made of copper.
- the heat sink material 14 functions as the heat dissipator and the thermal path is in the direction from the die 13 to the heat sink material 14, as indicated by the arrows 23 and 24 directed from the die 13 into the heat sink material 14.
- flex CBs include a stabilizing device, such as an aluminum stiffener (not shown), that is located between the heat sink material 14 and the layer of polyimid and adhesive 15.
- the stiffener provides mechanical stability to the flex CB.
- the stiffener may function as both a heat sink and as a stabilizing device, in which case the heat sink material 14 may be omitted.
- the heat sink material 14 need not be part of the CB 12, but may instead be a separate device upon which the CB 12 is placed. If a stiffener is used, it provides a path of heat dissipation into the heat sink material 14 and ultimately into the armature and housing of the disc drive.
- the electrical interconnects 19 that connect the contact pads of the die 13 with the circuit traces formed in the metal layer 16 are solder or lead-free bumps that are placed on the electrical contact pads (not shown) located on the bottom face of the die 13 and heated and then placed in contact with the circuit traces on the flex CB 12.
- the bumps cool and harden, they form a rigid electrical connection between the pads on the bottom face of the die 13 and the circuit traces formed in the metal layer 16 of the flex CB 12.
- the spacing between the die 13 and the flex CB 12 typically is filled with an underfill material 21 that provides mechanical stability. This is intended to prevent undue mechanical stresses from being exerted upon the die 13 and the interconnects that could cause the electrical connections to fail.
- the underfill material 21 is usually applied after the pads of the die 13 have been interconnected with the circuit traces on the flex CB 12.
- the underfill material 21 is typically applied using capillary flow. The underfill material 21 is then heated in order to cure the material into a solid, physical state.
- the underfill material 21 that is currently used for this purpose has poor thermal conductivity and is typically Hysol®FP4549, manufactured by the Henkel Loctite Corporation of Dusseldorf, Germany.
- This particular underfill material is a high purity, low stress, liquid epoxy designed for enahanced adhesion to integrated circuit passivation materials.
- the flex CB assembly When a flex CB assembly such as that shown in Fig. 1 is used on a read/write head of a disc drive, the flex CB assembly normally uses large amounts of current and/or voltage to enable the read and write operations to be performed. These types of signals typically exhibit very fast rise times, some less than 200 picoseconds (ps), and large slew rates in excess of 700 miliamperes (mA) per nanosecond (ns), which produce extremely large instantaneous currents and/or voltages. These large instantaneous currents and/or voltages produce a large amount of thermal energy that needs to be dissipated.
- flex CB assemblies When a flex CB assembly is used in a very physically small environment, such as on a read/write head of a disk drive, for example, where space and cost constraints are at a premium, typical approaches for reducing thermal resistance are inadequate and/or impractical.
- flex CB assemblies typically use a single-layer (i.e., .the metal layer 16 having traces formed in it).
- simple multi-layer plated through-hole technology can be used to provide thermally conductive heat paths down through the CB in order to dissipate thermal heat generated.
- multi-layer CBs usually cost considerably more than single-layer CBs.
- multi-layer conductor CB may be cost prohibitive in some cases. Also, due to the aerodynamics of the head armature in a disc drive application, multi-layer CBs located on the armature of a disc drive are usually unsuitable because the additional mass on the armature can result in slower read and write speeds.
- the invention provides a method and an apparatus for dissipating heat in a circuit board assembly.
- the CB assembly includes a CB having a void formed in it, an integrated circuit (IC) die mounted to a side of the CB, and a high thermal conductivity (HTC) device thermally coupled on a first end to the die and at least partially disposed in the void.
- the HTC device has a second end that is thermally coupled to a portion of the CB below the void. Heat produced by the die is dissipated through the HTC device into the CB.
- the method comprises providing a die having one or more electrical circuits and one or more electrical connections formed thereon, providing a CB having one or more electrical connections and a void formed therein, and mounting the die on a CB such that at least one electrical connection on the die is in contact with at least one electrical connection on the CB.
- the die is mounted on the CB, at least a portion of the HTC device is within the void, the first end of the HTC device is thermally coupled to the die, and the second end of the HTC device is thermally coupled with a portion of the CB.
- Fig. 1 illustrates a cross-sectional view of a typical direct-chip-attach configuration comprising a CB and an IC die mounted on the CB.
- Fig. 2 illustrates a perspective view of the high thermal conductivity (HTC) device in accordance with an exemplary embodiment.
- FIG. 3 illustrates a perspective view of the direct-chip-attach assembly of the invention in accordance with an exemplary embodiment having the HTC device shown in Fig. 2 attached to the die of the assembly.
- a device of relatively high thermal conductivity is disposed between a die and a CB and is in contact with the die and the CB.
- the high thermal conductivity (HTC) device is attached on one end to the die.
- the HTC device When the die is mounted on the CB, the HTC device is partially disposed within a void formed in the CB and an end of the device opposite the end that is attached to the die is in contact with a stiffener of the CB. Heat produced by the die is dissipated through the HTC device and into the stiffener, which functions as a mechanical stabilizer.
- the stiffener may also function as a heat sink material.
- a separate heat sink material may be used in addition to the stiffener, in which case, the heat that is dissipated into the stiffener is then dissipated into the heat sink material.
- Fig. 2 illustrates a perspective view of one embodiment of an HTC device 30 in accordance with the invention.
- the HTC device 30 comprises a disk-shaped portion 31 and a cone- shaped portion 32.
- the disk-shaped portion 31 includes a first side 31 A and a second side 3 IB.
- the cone-shaped portion 32 includes an end 32 A and an outer surface 32B. End 32A of the cone-shaped portion 32 forms one end of the HTC device 30, and the first side 31 A of the disk-shaped portion 31 forms the other end of the HTC device 30.
- Fig. 3 illustrates a perspective view of one embodiment of a direct-chip-attach assembly 40 in accordance with the present invention.
- the assembly 40 comprises the HTC device 30 shown in Fig. 2, a CB 42 and a die 43.
- the CB 42 is a flex circuit.
- the CB 42 and the die 43 may be made up of the same layers as described above with reference to the CB 12 and die 13, respectively, shown in Fig. 1.
- the assembly 40 is not limited to any particular die or CB.
- the invention is being described with reference to a direct-chip-attach configuration, the invention is equally applicable to any type of die and CB combination, including, for example, multi-level CB and die attachment assemblies.
- the CB 42 can include a void 44 formed in it that extends through a top layer 45 of the CB 42, which comprises, for example, polyimide, down to an upper surface 46 of a stiffener 47, which comprises, for example, aluminum.
- First side 31 A of the HTC device 30 may be attached to the bottom surface 48 of the die 43 in a variety of ways, such as by using a pressure adhesive (not shown).
- the HTC device 30 is positioned within the void 44, so that the end 32 A of the HTC device 30 is in contact with the upper surface 46 of the stiffener 47.
- end 32 A of the HTC device 30 can be attached to the upper surface 46 of the stiffener 47 using, for example, a pressure adhesive or any other attachment material or technique. In other embodiments, end 32A of the HTC device 30 may be held against or near the upper surface 46 of the stiffener 47 merely by the pressure of the die 43 against the CB 42.
- the opening 44 is cone-shaped to accommodate the shape of the cone-shaped portion 32 of the HTC device 30.
- the void 44 is dimensioned such that the outer surface 32B of the cone- shaped portion 32 of the HTC device 30 is in contact with or close proximity to an inner wall of the void 44.
- the CB 42 and the die 43 include electrical connections 52 and 53, respectively, that are in contact with each other when the die 43 is mounted on the CB 42.
- the overall length of the HTC device 30 from the first side 31 A to end 32 A is such that when the die 43 is mounted on the CB 42, the electrical connections 52 on CB 42 are in contact with respective electrical connections 53 on die 43 and the end 32 A of the HTC device 30 is in contact with or in proximity to the upper surface 46 of the stiffener 47.
- the void 44 may be partially filled with some material of high thermal conductivity such that when the die 43 is mounted to the CB 42, the end 32A of the HTC device 30 comes into contact with that material.
- the entire path from the die 43 to the stiffener 47 has a high thermal conductivity.
- heat produced by the die 43 will be dissipated from the die 43 through the HTC device 30 and into the stiffener 47.
- dimensioning of the HTC device 30 is such that when the die 43 is mounted on the CB 42, connections 52 and 53 are in contact with each other, and the end 32A of the HTC device 30 is in contact with or in proximity to the upper surface 46 of the stiffener 47. This configuration helps eliminate the potential for the die 43 to tilt with respect to the CB 42.
- connections 53 are solder bumps
- the contact between the end 32A and the upper surface 46 of the stiffener 47 will help prevent the die 43 from tilting.
- the complimentary shapes of the void 44 and the HTC device 30 render the HTC device 30 and the void 44 self-aligning, which also can facilitate mounting of the die 43 on the CB 42.
- the HTC device 30 can be placed on the die 43 during the die fabrication process by a variety of techniques, such as, for example, extrusion or injection molding.
- the HTC device 30 may be made of any material that has a higher thermal conductivity than that of the layer 45 of the CB 42. Some suitable materials include, but are not limited to, thermally conductive elastomers or thermoplastics.
- the HTC device 30 may be placed on the die 43 after all of the other layers of the die have been formed including the passivation layer. If the HTC device 30 is placed on the die at the wafer level, a mold containing many, (e.g., thousands) molds for many HTC devices may be used to place HTC devices on many respective dies. Then, when the dies are cut from the wafer, each die will have an HTC device attached thereto. Alternatively, the HTC devices 30 may be placed on the dies after they have been cut from the wafer.
- the HTC device of the invention is not limited to being made of any particular high thermal conductivity material.
- the HTC device may be a solder bump that is put on the die when the solder bumps that form the connections 53 are placed on the die 43.
- forming the HTC device does not require that an additional process step be performed when making either the die 43 or the CB 42.
- a material of high thermal conductivity may be disposed in the void such that when the die 43 is mounted to the CB 42, the solder bump that comprises the HTC device comes into contact with the material. This ensures that the entire path from the die to the stiffener is of high thermal conductivity. This also makes it unnecessary for the solder bump comprising the HTC device to be made large enough to extend from the die to the stiffener.
- the invention has been described with reference to a few example embodiments and that the present invention is not limited to these embodiments.
- the embodiments described herein are meant to convey the principles and concepts of the present invention and are not intended to demonstrate exclusive embodiments for carrying out the invention.
- the HTC device has been described as having a conical shape. This is only one of many possible shapes for the HTC device.
- the HTC device is not limited to having any particular shape or to being made of any particular material.
- the HTC device has been described as being attached first to the die, it may instead be attached first to the CB. Further, in other embodiments, more than one HTC device can be used. For example, multiple HTC devices can be positioned between die 43 and CB 42. Other modifications may be made to the embodiments described herein and all such modifications are within the scope of the present invention.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2006/014009 WO2007120124A1 (en) | 2006-04-14 | 2006-04-14 | Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board |
KR1020087024806A KR101212473B1 (ko) | 2006-04-14 | 2006-04-14 | 집적 회로 및 회로 기판의 직접 칩 실장 결합 구성에서의 열에너지 분산을 개선하기 위한 방법 및 장치 |
JP2009505342A JP2009533865A (ja) | 2006-04-14 | 2006-04-14 | 集積回路および回路ボードのダイレクト・チップ・アタッチ結合構成における熱エネルギーの消散を改善するための方法および装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2006/014009 WO2007120124A1 (en) | 2006-04-14 | 2006-04-14 | Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board |
Publications (1)
Publication Number | Publication Date |
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WO2007120124A1 true WO2007120124A1 (en) | 2007-10-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2006/014009 WO2007120124A1 (en) | 2006-04-14 | 2006-04-14 | Method and apparatus for improving thermal energy dissipation in a direct-chip-attach coupling configuration of an integrated circuit and a circuit board |
Country Status (3)
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JP (1) | JP2009533865A (ja) |
KR (1) | KR101212473B1 (ja) |
WO (1) | WO2007120124A1 (ja) |
Citations (5)
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EP0981268A1 (en) * | 1998-06-23 | 2000-02-23 | Nitto Denko Corporation | Circuit board with an electronic component mounted thereon and multi-layer board |
US20010028110A1 (en) * | 2000-04-06 | 2001-10-11 | Seiji Andoh | Semiconductor device and method for manufacturing the same |
EP1261028A2 (en) * | 2001-05-22 | 2002-11-27 | Hitachi, Ltd. | Cooling arrangement for an electronic apparatus |
US20050245060A1 (en) * | 2004-05-03 | 2005-11-03 | Intel Corporation | Package design using thermal linkage from die to printed circuit board |
US20050285246A1 (en) * | 2004-06-25 | 2005-12-29 | Tessera, Inc. | Microelectronic packages and methods therefor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05109943A (ja) * | 1991-10-21 | 1993-04-30 | Fujitsu Ltd | 集積回路の冷却構造 |
JPH05243415A (ja) * | 1992-02-26 | 1993-09-21 | Sony Corp | 配線基板 |
JP3849573B2 (ja) * | 2001-05-22 | 2006-11-22 | 株式会社日立製作所 | 電子装置 |
JP2003200535A (ja) * | 2001-10-25 | 2003-07-15 | Matsushita Electric Ind Co Ltd | プリプレグおよび回路基板、ならびにそれらの製造方法 |
JP4462473B2 (ja) * | 2002-07-01 | 2010-05-12 | 富士通株式会社 | 高周波回路基板及びそれを用いた半導体装置 |
-
2006
- 2006-04-14 WO PCT/US2006/014009 patent/WO2007120124A1/en active Application Filing
- 2006-04-14 KR KR1020087024806A patent/KR101212473B1/ko not_active IP Right Cessation
- 2006-04-14 JP JP2009505342A patent/JP2009533865A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0981268A1 (en) * | 1998-06-23 | 2000-02-23 | Nitto Denko Corporation | Circuit board with an electronic component mounted thereon and multi-layer board |
US20010028110A1 (en) * | 2000-04-06 | 2001-10-11 | Seiji Andoh | Semiconductor device and method for manufacturing the same |
EP1261028A2 (en) * | 2001-05-22 | 2002-11-27 | Hitachi, Ltd. | Cooling arrangement for an electronic apparatus |
US20050245060A1 (en) * | 2004-05-03 | 2005-11-03 | Intel Corporation | Package design using thermal linkage from die to printed circuit board |
US20050285246A1 (en) * | 2004-06-25 | 2005-12-29 | Tessera, Inc. | Microelectronic packages and methods therefor |
Also Published As
Publication number | Publication date |
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JP2009533865A (ja) | 2009-09-17 |
KR101212473B1 (ko) | 2012-12-18 |
KR20090004941A (ko) | 2009-01-12 |
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