JP2009529765A - プラズマプロセスの監視制御技術 - Google Patents

プラズマプロセスの監視制御技術 Download PDF

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Publication number
JP2009529765A
JP2009529765A JP2008558441A JP2008558441A JP2009529765A JP 2009529765 A JP2009529765 A JP 2009529765A JP 2008558441 A JP2008558441 A JP 2008558441A JP 2008558441 A JP2008558441 A JP 2008558441A JP 2009529765 A JP2009529765 A JP 2009529765A
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ion
ions
ion sensor
plasma
drift tube
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Ceased
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JP2008558441A
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Japanese (ja)
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JP2009529765A5 (https=
Inventor
クー、ボン−ウーン
ゴデ、ルードビック
ヴォーロミス、ヴァシリス、パナヨティス
シング、ヴィクラム
ファング、ジウェイ
リンセー、バーナード、ジー．
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Priority claimed from US11/371,907 external-priority patent/US7476849B2/en
Application filed by バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド filed Critical バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
Publication of JP2009529765A publication Critical patent/JP2009529765A/ja
Publication of JP2009529765A5 publication Critical patent/JP2009529765A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/40—Time-of-flight spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Plasma Technology (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Drying Of Semiconductors (AREA)
JP2008558441A 2006-03-10 2007-03-09 プラズマプロセスの監視制御技術 Ceased JP2009529765A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/371,907 US7476849B2 (en) 2006-03-10 2006-03-10 Technique for monitoring and controlling a plasma process
US11/678,524 US7453059B2 (en) 2006-03-10 2007-02-23 Technique for monitoring and controlling a plasma process
PCT/US2007/006244 WO2007106449A2 (en) 2006-03-10 2007-03-09 Technique for monitoring and controlling a plasma process

Publications (2)

Publication Number Publication Date
JP2009529765A true JP2009529765A (ja) 2009-08-20
JP2009529765A5 JP2009529765A5 (https=) 2010-03-11

Family

ID=38319233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008558441A Ceased JP2009529765A (ja) 2006-03-10 2007-03-09 プラズマプロセスの監視制御技術

Country Status (5)

Country Link
US (2) US7453059B2 (https=)
JP (1) JP2009529765A (https=)
KR (1) KR20080112266A (https=)
TW (1) TW200739781A (https=)
WO (1) WO2007106449A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014504782A (ja) * 2011-01-10 2014-02-24 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 処理システムにおけるイオンの質量、エネルギー、および角度をモニターする技術および装置
JP2021048415A (ja) * 2020-12-14 2021-03-25 東京エレクトロン株式会社 基板処理装置及び測定用基板
JP2023509542A (ja) * 2020-01-10 2023-03-08 コメット テクノロジーズ ユーエスエー インコーポレイテッド 無線周波数プラズマ処理システムのための均一性制御

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US7476849B2 (en) * 2006-03-10 2009-01-13 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process
US7675730B2 (en) * 2007-06-25 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Techniques for detecting wafer charging in a plasma processing system
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US20090017229A1 (en) * 2007-07-10 2009-01-15 Varian Semiconductor Equipment Associates, Inc. Processing System Platen having a Variable Thermal Conductivity Profile
US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control
US20090104719A1 (en) * 2007-10-23 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System with In-Situ Chamber Condition Monitoring
US7888636B2 (en) * 2007-11-01 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Measuring energy contamination using time-of-flight techniques
US7586100B2 (en) * 2008-02-12 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Closed loop control and process optimization in plasma doping processes using a time of flight ion detector
US20090227096A1 (en) * 2008-03-07 2009-09-10 Varian Semiconductor Equipment Associates, Inc. Method Of Forming A Retrograde Material Profile Using Ion Implantation
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US20100019141A1 (en) * 2008-07-25 2010-01-28 Varian Semiconductor Equipment Associates, Inc. Energy contamination monitor with neutral current detection
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
US20100155600A1 (en) * 2008-12-23 2010-06-24 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for plasma dose measurement
FR2942071B1 (fr) * 2009-02-11 2011-04-08 Horiba Jobin Yvon Sas Lampe a decharge pour gds a champ magnetique axial
US8650002B2 (en) * 2009-06-30 2014-02-11 Lam Research Corporation Determining plasma processing system readiness without generating plasma
DE102011004725A1 (de) * 2011-02-25 2012-08-30 Helmholtz-Zentrum Potsdam Deutsches GeoForschungsZentrum - GFZ Stiftung des Öffentlichen Rechts des Landes Brandenburg Verfahren und Vorrichtung zur Erhöhung des Durchsatzes bei Flugzeitmassenspektrometern
JP5722125B2 (ja) * 2011-06-03 2015-05-20 株式会社日立ハイテクノロジーズ 質量分析装置
DE102012200211A1 (de) * 2012-01-09 2013-07-11 Carl Zeiss Nts Gmbh Vorrichtung und Verfahren zur Oberflächenbearbeitung eines Substrates
CN102623287B (zh) * 2012-02-22 2015-03-11 北京交通大学 一种真空放电等离子体的离子流检测装置及方法
US10128090B2 (en) * 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9029763B2 (en) * 2013-08-30 2015-05-12 Agilent Technologies, Inc. Ion deflection in time-of-flight mass spectrometry
KR101406696B1 (ko) * 2013-12-27 2014-06-11 (주)제이오션 원격 플라즈마 소스를 위한 플라즈마 블록
US9230773B1 (en) * 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control
US9627190B2 (en) 2015-03-27 2017-04-18 Agilent Technologies, Inc. Energy resolved time-of-flight mass spectrometry
KR20160120382A (ko) 2015-04-07 2016-10-18 삼성전자주식회사 광학 분광 분석 장치 및 플라즈마 처리 장치
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
TWI888050B (zh) * 2019-03-25 2025-06-21 日商亞多納富有限公司 製程系統
TWI897405B (zh) * 2019-03-25 2025-09-11 日商亞多納富有限公司 半導體製造系統、其控制方法及控制該系統的電腦程式
CN113473675B (zh) * 2021-06-03 2022-10-18 荣耀终端有限公司 光源电路及终端
US20250308867A1 (en) * 2024-03-29 2025-10-02 Tokyo Electron Limited High-performance adaptable sampling system

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JPH01160653U (https=) * 1988-04-27 1989-11-08
JPH03155038A (ja) * 1989-11-10 1991-07-03 Hitachi Ltd 荷電粒子分析装置
JPH08306671A (ja) * 1995-05-08 1996-11-22 Yasuhiro Horiike プラズマエッチング装置
JPH09199079A (ja) * 1995-11-02 1997-07-31 Hewlett Packard Co <Hp> 質量分析計及び関連方法
JP2000100372A (ja) * 1998-09-10 2000-04-07 Eaton Corp イオンビ―ム注入装置、イオンビ―ムのエネルギ―測定装置、及びイオンの平均運動エネルギ―の測定方法
JP2003086517A (ja) * 2001-09-10 2003-03-20 Japan Radio Co Ltd プラズマｃｖｄ膜の形成方法及びプラズマｃｖｄ装置
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JPS60202646A (ja) * 1984-03-26 1985-10-14 Seiko Instr & Electronics Ltd 二重アノ−ド型四重極分析計
JPH01160653U (https=) * 1988-04-27 1989-11-08
JPH03155038A (ja) * 1989-11-10 1991-07-03 Hitachi Ltd 荷電粒子分析装置
JPH08306671A (ja) * 1995-05-08 1996-11-22 Yasuhiro Horiike プラズマエッチング装置
JPH09199079A (ja) * 1995-11-02 1997-07-31 Hewlett Packard Co <Hp> 質量分析計及び関連方法
JP2000100372A (ja) * 1998-09-10 2000-04-07 Eaton Corp イオンビ―ム注入装置、イオンビ―ムのエネルギ―測定装置、及びイオンの平均運動エネルギ―の測定方法
JP2003086517A (ja) * 2001-09-10 2003-03-20 Japan Radio Co Ltd プラズマｃｖｄ膜の形成方法及びプラズマｃｖｄ装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014504782A (ja) * 2011-01-10 2014-02-24 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 処理システムにおけるイオンの質量、エネルギー、および角度をモニターする技術および装置
JP2023509542A (ja) * 2020-01-10 2023-03-08 コメット テクノロジーズ ユーエスエー インコーポレイテッド 無線周波数プラズマ処理システムのための均一性制御
JP7499338B2 (ja) 2020-01-10 2024-06-13 コメット テクノロジーズ ユーエスエー インコーポレイテッド 無線周波数プラズマ処理システムのための均一性制御
JP2021048415A (ja) * 2020-12-14 2021-03-25 東京エレクトロン株式会社 基板処理装置及び測定用基板
JP7050139B2 (ja) 2020-12-14 2022-04-07 東京エレクトロン株式会社 基板処理装置及び測定用基板

Also Published As

Publication number Publication date
WO2007106449A3 (en) 2007-11-01
WO2007106449A2 (en) 2007-09-20
US20070227231A1 (en) 2007-10-04
TW200739781A (en) 2007-10-16
US20090283670A1 (en) 2009-11-19
US7453059B2 (en) 2008-11-18
KR20080112266A (ko) 2008-12-24

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