JP2009529242A - 張力のある窒化シリコン膜のスパッタリングシステムおよび方法 - Google Patents
張力のある窒化シリコン膜のスパッタリングシステムおよび方法 Download PDFInfo
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Abstract
【選択図】図2
Description
応力下の膜は負の膜応力を持ち、それによって集積回路の下にある層を凸型の形状に曲げる傾向がある。しかしながら、いろいろな応用例について、張力のあるSiN膜(下にある層を凹型の形状に曲げる傾向のある、正の膜応力を持つSiN膜)は都合がよい。例えば、張力のあるSiN膜で構成された負チャネル金属酸化物半導体(“NMOS”)ゲート構造は、圧縮力のあるSiNで構成された同様のNMOSよりもよく作動する。前述のように、張力のあるSiN膜のスパッタリングのシステムと方法は望ましいものである。
おいては、圧力閾値は6.5 ミリトール(“mT”)以上である。しかしながら、認識されるように、閾値圧力レベルは、窒素および/またはアルゴンガスの流速、チャンバ体積、ポンピング速度、堆積速度などに依存して変化しうる。一実施形態においては、チャンバ圧力閾値に、または閾値より高く、プロセス圧力を促進するように、ゲートバルブ18の位置が調整されてもよい。しかしながら、認識されるように、代替実施形態では、他の適切な種類のポンピング装置がプロセスチャンバ12の圧力を設定するために使用されてもよい。
Claims (18)
- シリコンを含むターゲットを備えるプロセスチャンバ内に、窒素ガスを導入するステップと、
前記プロセスチャンバを、金属領域とポイズン領域の間の遷移領域内に置くステップと、
電圧を前記ターゲットに印加するステップと、
を含む、方法。 - 前記窒素ガスを前記プロセスチャンバ内に導入するステップが、8 sccmから14 sccmの間で導入するステップを含む、請求項1に記載の方法。
- 前記プロセスチャンバを遷移領域内に置くステップが、前記プロセスチャンバの圧力をおよそ6.5 mT以上に設定するステップを含む、請求項2に記載の方法。
- 前記電圧を前記ターゲットに印加するステップが、パルス化したDC電圧を前記ターゲットに印加するステップを含む、請求項1に記載の方法。
- 前記電圧を前記ターゲットに印加するステップが、前記電圧を金属プレートに印加するステップを含む、請求項1に記載の方法。
- 作用ガスを前記プロセスチャンバに導入するステップを含む、請求項1に記載の方法。
- 張力のあるSiN膜をウェハ上にスパッタするステップを含む、請求項1に記載の方法。
- シリコンを含むターゲットを備えるプロセスチャンバであって、前記プロセスチャンバは、金属領域とポイズン領域の間の遷移領域に入るように形成されるプロセスチャンバと、
窒素ガスを前記プロセスチャンバ内に導入するように形成されるガス源と、
電圧を前記ターゲットに印加するように形成される電圧源と、
を含む、半導体製造装置。 - 前記プロセスチャンバは、少なくとも6.5 mTのプロセス圧力を確立することによって、前記遷移領域に入るように形成される、請求項8に記載の装置。
- 前記プロセスチャンバは、極低温ポンプおよび可変ゲート値を含む、請求項9に記載の装置。
- 前記ガス源は、前記プロセスチャンバに少なくとも10 sccmの速度で窒素ガスを導入するように形成される、請求項9に記載の装置。
- 前記ガス源は、前記プロセスチャンバにおよそ14 sccm以下の速度で窒素ガスを導入するように形成される、請求項13に記載の装置。
- 前記プロセスチャンバは、Endura TM プロセスチャンバを含む、請求項9に記載の装置。
- 前記電圧源はDC電圧源を含む、請求項9に記載の装置。
- 前記ターゲットは金属プレートを含み、前記電圧源は前記電圧を前記金属プレートに印
加するように形成される、請求項9に記載の装置。 - 窒素ガスを、シリコンを含むターゲットを備えるプロセスチャンバ内に導入するステップと、
前記プロセスチャンバを、金属領域とポイズン領域の間の遷移領域内に置くステップと、
電圧を前記ターゲットに印加するステップと、
によって形成される、張力のある窒化シリコン膜。 - 前記窒素ガスを前記プロセスチャンバ内に導入するステップが、8 sccmから14 sccmの間で導入するステップを含む、請求項18に記載の張力のある窒化シリコン膜。
- 前記プロセスチャンバを遷移領域内に置くステップが、前記プロセスチャンバの圧力をおよそ6.5 mT以上に設定するステップを含む、請求項18に記載の張力のある窒化シリコン膜。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/370,269 US8936702B2 (en) | 2006-03-07 | 2006-03-07 | System and method for sputtering a tensile silicon nitride film |
US11/370,269 | 2006-03-07 | ||
PCT/US2007/005886 WO2007103471A2 (en) | 2006-03-07 | 2007-03-07 | System and method for sputtering a tensile silicon nitride film |
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JP2009529242A true JP2009529242A (ja) | 2009-08-13 |
JP5126612B2 JP5126612B2 (ja) | 2013-01-23 |
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JP2008558387A Expired - Fee Related JP5126612B2 (ja) | 2006-03-07 | 2007-03-07 | 張力のある窒化シリコン膜のスパッタリング方法 |
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US (1) | US8936702B2 (ja) |
EP (1) | EP1999289A2 (ja) |
JP (1) | JP5126612B2 (ja) |
KR (1) | KR101395974B1 (ja) |
CN (2) | CN105018880A (ja) |
WO (1) | WO2007103471A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014125649A (ja) * | 2012-12-26 | 2014-07-07 | Ulvac Japan Ltd | スパッタリング装置の制御方法 |
JP2014197190A (ja) * | 2013-03-08 | 2014-10-16 | Hoya株式会社 | マスクブランクの製造方法および位相シフトマスクの製造方法 |
JP2016194626A (ja) * | 2015-03-31 | 2016-11-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランクの製造方法 |
US10180622B2 (en) | 2013-01-15 | 2019-01-15 | Hoya Corporation | Mask blank, phase-shift mask, method of manufacturing mask blank, method of manufacturing phase-shift mask and method of manufacturing semiconductor device |
WO2023105894A1 (ja) * | 2021-12-09 | 2023-06-15 | 株式会社アルバック | 窒化シリコン膜の成膜方法、成膜装置及び窒化シリコン膜 |
Families Citing this family (5)
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CN102725433B (zh) * | 2010-01-21 | 2014-07-02 | Oc欧瑞康巴尔斯公司 | 用以沉积防反射层于基材上的方法 |
KR101590305B1 (ko) * | 2015-08-13 | 2016-01-29 | 김뢰호 | 불연성 조성물 및 그를 이용한 비드 폼 및 이의 제조방법 |
JP6500791B2 (ja) * | 2016-01-22 | 2019-04-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
JP6653383B2 (ja) * | 2016-05-16 | 2020-02-26 | 株式会社アルバック | 内部応力制御膜の形成方法 |
KR20230078887A (ko) | 2021-11-26 | 2023-06-05 | 김뢰호 | 2차 가공에 의한 단열재 조성물을 이용한 발포 폴리스타이렌 및 그 제조방법 |
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- 2007-03-07 WO PCT/US2007/005886 patent/WO2007103471A2/en active Application Filing
- 2007-03-07 CN CN201510471979.5A patent/CN105018880A/zh active Pending
- 2007-03-07 CN CNA2007800076564A patent/CN101395294A/zh active Pending
- 2007-03-07 EP EP07752575A patent/EP1999289A2/en not_active Withdrawn
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Cited By (7)
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JP2014125649A (ja) * | 2012-12-26 | 2014-07-07 | Ulvac Japan Ltd | スパッタリング装置の制御方法 |
US10180622B2 (en) | 2013-01-15 | 2019-01-15 | Hoya Corporation | Mask blank, phase-shift mask, method of manufacturing mask blank, method of manufacturing phase-shift mask and method of manufacturing semiconductor device |
US10539866B2 (en) | 2013-01-15 | 2020-01-21 | Hoya Corporation | Mask blank, phase-shift mask, and method of manufacturing semiconductor device |
US10942442B2 (en) | 2013-01-15 | 2021-03-09 | Hoya Corporation | Mask blank, phase-shift mask, and method of manufacturing semiconductor device |
JP2014197190A (ja) * | 2013-03-08 | 2014-10-16 | Hoya株式会社 | マスクブランクの製造方法および位相シフトマスクの製造方法 |
JP2016194626A (ja) * | 2015-03-31 | 2016-11-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランクの製造方法 |
WO2023105894A1 (ja) * | 2021-12-09 | 2023-06-15 | 株式会社アルバック | 窒化シリコン膜の成膜方法、成膜装置及び窒化シリコン膜 |
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KR101395974B1 (ko) | 2014-05-16 |
US8936702B2 (en) | 2015-01-20 |
EP1999289A2 (en) | 2008-12-10 |
JP5126612B2 (ja) | 2013-01-23 |
CN105018880A (zh) | 2015-11-04 |
WO2007103471A2 (en) | 2007-09-13 |
KR20080106423A (ko) | 2008-12-05 |
US20070212893A1 (en) | 2007-09-13 |
WO2007103471A3 (en) | 2007-11-15 |
CN101395294A (zh) | 2009-03-25 |
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