JP2009517817A5 - - Google Patents
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- JP2009517817A5 JP2009517817A5 JP2008542660A JP2008542660A JP2009517817A5 JP 2009517817 A5 JP2009517817 A5 JP 2009517817A5 JP 2008542660 A JP2008542660 A JP 2008542660A JP 2008542660 A JP2008542660 A JP 2008542660A JP 2009517817 A5 JP2009517817 A5 JP 2009517817A5
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- JP
- Japan
- Prior art keywords
- substrate
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- wafer
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 235000012431 wafers Nutrition 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000465 moulding Methods 0.000 description 7
- 238000004049 embossing Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005058398.9 | 2005-12-02 | ||
| DE102005058398 | 2005-12-02 | ||
| DE102006021111.1 | 2006-05-05 | ||
| DE102006021111A DE102006021111B3 (de) | 2005-12-02 | 2006-05-05 | Verfahren zur Herstellung von Hohlkörpern von Resonatoren |
| PCT/EP2006/011464 WO2007062829A1 (de) | 2005-12-02 | 2006-11-29 | Verfahren zur herstellung von hohlkörpern für resonatoren |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009517817A JP2009517817A (ja) | 2009-04-30 |
| JP2009517817A5 true JP2009517817A5 (https=) | 2012-11-29 |
| JP5320068B2 JP5320068B2 (ja) | 2013-10-23 |
Family
ID=37671243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008542660A Active JP5320068B2 (ja) | 2005-12-02 | 2006-11-29 | 共振器用中空体の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8088714B2 (https=) |
| EP (1) | EP1955404B1 (https=) |
| JP (1) | JP5320068B2 (https=) |
| AT (1) | ATE426255T1 (https=) |
| DE (2) | DE102006021111B3 (https=) |
| WO (1) | WO2007062829A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9352416B2 (en) * | 2009-11-03 | 2016-05-31 | The Secretary, Department Of Atomic Energy, Govt. Of India | Niobium based superconducting radio frequency(SCRF) cavities comprising niobium components joined by laser welding, method and apparatus for manufacturing such cavities |
| JP5804840B2 (ja) * | 2011-08-11 | 2015-11-04 | 三菱重工業株式会社 | 加工装置及び加工方法 |
| US11071194B2 (en) * | 2016-07-21 | 2021-07-20 | Fermi Research Alliance, Llc | Longitudinally joined superconducting resonating cavities |
| EP3346017B1 (de) * | 2017-01-10 | 2021-09-15 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum schneiden von refraktärmetallen |
| US10847860B2 (en) | 2018-05-18 | 2020-11-24 | Ii-Vi Delaware, Inc. | Superconducting resonating cavity and method of production thereof |
| US10856402B2 (en) | 2018-05-18 | 2020-12-01 | Ii-Vi Delaware, Inc. | Superconducting resonating cavity with laser welded seam and method of formation thereof |
| US11464102B2 (en) | 2018-10-06 | 2022-10-04 | Fermi Research Alliance, Llc | Methods and systems for treatment of superconducting materials to improve low field performance |
| US12225656B2 (en) | 2018-12-28 | 2025-02-11 | Shanghai United Imaging Healthcare Co., Ltd. | Accelerating apparatus for a radiation device |
| CN109462932B (zh) * | 2018-12-28 | 2021-04-06 | 上海联影医疗科技股份有限公司 | 一种驻波加速管 |
| CN113355671B (zh) * | 2021-06-10 | 2022-12-13 | 兰州荣翔轨道交通科技有限公司 | 基于数控车床的纯铌超导腔表面铜铌改性层制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3608160A1 (de) * | 1986-03-12 | 1987-09-24 | Kernforschungsz Karlsruhe | Verfahren zur herstellung supraleitender hohlraumresonatoren |
| DE3722745A1 (de) * | 1987-07-09 | 1989-01-19 | Interatom | Herstellungsverfahren fuer hohlkoerper aus beschichteten blechen und apparat, insbesondere supraleitender hochfrequenz-resonator |
| JPH03135000A (ja) * | 1989-10-20 | 1991-06-07 | Furukawa Electric Co Ltd:The | 超伝導加速管 |
| JPH03147299A (ja) * | 1989-11-01 | 1991-06-24 | Furukawa Electric Co Ltd:The | 超伝導加速空洞の製造方法 |
| US5239157A (en) * | 1990-10-31 | 1993-08-24 | The Furukawa Electric Co., Ltd. | Superconducting accelerating tube and a method for manufacturing the same |
| EP0522156A4 (en) * | 1991-01-24 | 1993-08-04 | The Furukawa Electric Co., Ltd. | Superconductive acceleration pipe |
| JP3089085B2 (ja) * | 1992-03-23 | 2000-09-18 | 三菱重工業株式会社 | 電子ビーム用超伝導加速空洞の製造方法 |
| ATE153211T1 (de) * | 1993-06-14 | 1997-05-15 | Ist Nazionale Fisica Nucleare | Herstellungsverfahren von nahtloser radiofrequenz-resonanzholräumen und dadurch erhaltenes produkt |
| US7746192B2 (en) * | 2005-06-20 | 2010-06-29 | The Texas A&M University System | Polyhedral contoured microwave cavities |
-
2006
- 2006-05-05 DE DE102006021111A patent/DE102006021111B3/de not_active Expired - Fee Related
- 2006-11-29 US US12/095,901 patent/US8088714B2/en active Active
- 2006-11-29 WO PCT/EP2006/011464 patent/WO2007062829A1/de not_active Ceased
- 2006-11-29 EP EP06818910A patent/EP1955404B1/de active Active
- 2006-11-29 AT AT06818910T patent/ATE426255T1/de not_active IP Right Cessation
- 2006-11-29 DE DE502006003219T patent/DE502006003219D1/de active Active
- 2006-11-29 JP JP2008542660A patent/JP5320068B2/ja active Active
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