JP2009515435A - 小型レンズターレットアセンブリ - Google Patents

小型レンズターレットアセンブリ Download PDF

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Publication number
JP2009515435A
JP2009515435A JP2008539032A JP2008539032A JP2009515435A JP 2009515435 A JP2009515435 A JP 2009515435A JP 2008539032 A JP2008539032 A JP 2008539032A JP 2008539032 A JP2008539032 A JP 2008539032A JP 2009515435 A JP2009515435 A JP 2009515435A
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JP
Japan
Prior art keywords
sensor unit
circuit panel
optical
imaging
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008539032A
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English (en)
Japanese (ja)
Other versions
JP2009515435A5 (cg-RX-API-DMAC7.html
Inventor
ハンプストン，ジャイルズ
ホーナー，ケニス・アレン
タッカーマン，デイヴィッド・ビー
Original Assignee
テッセラ，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by テッセラ，インコーポレイテッド filed Critical テッセラ，インコーポレイテッド
Publication of JP2009515435A publication Critical patent/JP2009515435A/ja
Publication of JP2009515435A5 publication Critical patent/JP2009515435A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
JP2008539032A 2005-11-02 2006-11-02 小型レンズターレットアセンブリ Withdrawn JP2009515435A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/265,727 US20060109366A1 (en) 2004-05-04 2005-11-02 Compact lens turret assembly
PCT/US2006/042829 WO2007056069A1 (en) 2005-11-02 2006-11-02 Compact lens turret assembly

Publications (2)

Publication Number Publication Date
JP2009515435A true JP2009515435A (ja) 2009-04-09
JP2009515435A5 JP2009515435A5 (cg-RX-API-DMAC7.html) 2010-03-04

Family

ID=37775236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008539032A Withdrawn JP2009515435A (ja) 2005-11-02 2006-11-02 小型レンズターレットアセンブリ

Country Status (4)

Country Link
US (2) US20060109366A1 (cg-RX-API-DMAC7.html)
EP (1) EP1943677A1 (cg-RX-API-DMAC7.html)
JP (1) JP2009515435A (cg-RX-API-DMAC7.html)
WO (1) WO2007056069A1 (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
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US20060109366A1 (en) * 2004-05-04 2006-05-25 Tessera, Inc. Compact lens turret assembly
WO2005109861A1 (en) * 2004-05-04 2005-11-17 Tessera, Inc. Compact lens turret assembly
US7199439B2 (en) * 2004-06-14 2007-04-03 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
EP1789829A1 (en) 2004-09-14 2007-05-30 CDM Optics, Inc. Low height imaging system and associated methods
US20070058069A1 (en) * 2005-09-14 2007-03-15 Po-Hung Chen Packaging structure of a light sensation module
US7443597B2 (en) * 2005-12-27 2008-10-28 Tessera, Inc. Liquid lens with piezoelectric voltage converter
US7690107B2 (en) * 2007-06-15 2010-04-06 The Boeing Company Method for aligning and installing flexible circuit interconnects
US7868830B2 (en) * 2008-05-13 2011-01-11 The Boeing Company Dual beam dual selectable polarization antenna
JP5998962B2 (ja) * 2013-01-31 2016-09-28 三菱電機株式会社 半導体光装置
US9955054B2 (en) 2015-02-05 2018-04-24 Robert Bosch Gmbh Camera and method for assembling with fixed final alignment
CN107508938B (zh) * 2017-09-06 2020-06-12 Oppo广东移动通信有限公司 相机模组及电子装置
CN110505372B (zh) * 2018-05-18 2021-03-09 致伸科技股份有限公司 摄像模块的组装方法
CN111474669B (zh) * 2020-05-29 2025-02-18 深圳市明信测试设备股份有限公司 一种基于鱼眼镜头的定位组装装置

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FR2791811B1 (fr) * 1999-03-31 2002-06-14 Sofradir Composant electrique ou electronique encapsule de maniere etanche
US6117193A (en) * 1999-10-20 2000-09-12 Amkor Technology, Inc. Optical sensor array mounting and alignment
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6455774B1 (en) * 1999-12-08 2002-09-24 Amkor Technology, Inc. Molded image sensor package
JP2001203913A (ja) * 2000-01-21 2001-07-27 Sony Corp 撮像装置、カメラモジュール及びカメラシステム
US6784409B2 (en) * 2000-03-28 2004-08-31 Canon Kabushiki Kaisha Electronic device with encapsulant of photo-set resin and production process of same
JP3607160B2 (ja) * 2000-04-07 2005-01-05 三菱電機株式会社 撮像装置
US6384397B1 (en) * 2000-05-10 2002-05-07 National Semiconductor Corporation Low cost die sized module for imaging application having a lens housing assembly
US6665455B1 (en) * 2000-08-14 2003-12-16 Opcom Inc. Structure of an image-sensing module
JP2002124654A (ja) * 2000-10-13 2002-04-26 Mitsubishi Electric Corp 固体撮像装置
US7304684B2 (en) * 2000-11-14 2007-12-04 Kabushiki Kaisha Toshiba Image pickup apparatus, method of making, and electric apparatus having image pickup apparatus
US6342406B1 (en) * 2000-11-15 2002-01-29 Amkor Technology, Inc. Flip chip on glass image sensor package fabrication method
US6683298B1 (en) * 2000-11-20 2004-01-27 Agilent Technologies Inc. Image sensor packaging with package cavity sealed by the imaging optics
JP3821652B2 (ja) * 2001-02-26 2006-09-13 三菱電機株式会社 撮像装置
JP3613193B2 (ja) * 2001-03-30 2005-01-26 三菱電機株式会社 撮像装置
TW540157B (en) * 2001-05-31 2003-07-01 Konishiroku Photo Ind CMOS image sensor
KR20030040865A (ko) * 2001-11-16 2003-05-23 주식회사 하이닉스반도체 암전류를 감소시키기 위한 이미지센서의 제조 방법
JP3952897B2 (ja) * 2002-07-31 2007-08-01 日本電気株式会社 カメラモジュール及びそれを用いた携帯通信端末
JP4397819B2 (ja) * 2002-09-17 2010-01-13 アンテルヨン、ベスローテン、フェンノートシャップ カメラ・デバイス、ならびに、カメラ・デバイスおよびウェハスケールパッケージの製造方法
JP3867785B2 (ja) * 2002-10-15 2007-01-10 セイコーエプソン株式会社 光モジュール
JP2004242166A (ja) * 2003-02-07 2004-08-26 Seiko Epson Corp 光モジュール及びその製造方法並びに電子機器
JP4510403B2 (ja) * 2003-05-08 2010-07-21 富士フイルム株式会社 カメラモジュール及びカメラモジュールの製造方法
JP4710610B2 (ja) * 2003-08-22 2011-06-29 コニカミノルタオプト株式会社 固体撮像装置及び該固体撮像装置を備えた撮像装置
US7619683B2 (en) * 2003-08-29 2009-11-17 Aptina Imaging Corporation Apparatus including a dual camera module and method of using the same
US7173231B2 (en) * 2003-09-16 2007-02-06 Wen Ching Chen Chip scale package structure for an image sensor
KR100557140B1 (ko) * 2003-09-16 2006-03-03 삼성전자주식회사 커넥터와 그를 이용한 이미지 센서 모듈
US20050085016A1 (en) * 2003-09-26 2005-04-21 Tessera, Inc. Structure and method of making capped chips using sacrificial layer
TWI234884B (en) * 2003-12-31 2005-06-21 Advanced Semiconductor Eng Image sensor package and method for manufacturing the same
US20060109366A1 (en) * 2004-05-04 2006-05-25 Tessera, Inc. Compact lens turret assembly

Also Published As

Publication number Publication date
US20060109366A1 (en) 2006-05-25
EP1943677A1 (en) 2008-07-16
WO2007056069A1 (en) 2007-05-18
US20100242269A1 (en) 2010-09-30

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