JP2009514602A - 植え込み型マイクロ電子デバイス及びその作製方法 - Google Patents
植え込み型マイクロ電子デバイス及びその作製方法 Download PDFInfo
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- JP2009514602A JP2009514602A JP2008539075A JP2008539075A JP2009514602A JP 2009514602 A JP2009514602 A JP 2009514602A JP 2008539075 A JP2008539075 A JP 2008539075A JP 2008539075 A JP2008539075 A JP 2008539075A JP 2009514602 A JP2009514602 A JP 2009514602A
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Abstract
Description
本願は、2005年11月2日に出願された米国仮特許出願第60/732,884号(発明の名称:Implantable Microelectronic Device and Method of Manufacture)の優先権主張出願であり、この米国仮特許出願を参照により引用し、その開示内容を本明細書の一部とする。
ポリイミド層のエッチングされた特徴部は、このパターン形成技術に関与する仕組みに起因して垂直の又は僅かにアンダーカットされた断面プロフィールを示す。蒸着材料をマスク剥離ステップ中、変形させ又は基板表面から取り去る。適正なRIE(又はレーザ)パラメータは、必要な壁特性を保証する。剥離層、例えばパリレン又はフルオロポリマーも又被着させるのが良い。
Claims (33)
- マイクロ電子デバイスであって、
電気接触パッドが取り付けられたマイクロ電子デバイスを有し、
前記電気接触パッド上に形成された少なくとも1つの薄いパターン形成導電層を有し、前記少なくとも1つのパターン形成導電層の頂面は、外部電気接触表面を構成し、前記少なくとも1つのパターン形成導電層の第1の層は、前記電気接触パッドと直接的に接触しており、
前記マイクロ電子デバイスを気密的に包囲している電気絶縁材料を有し、前記電気絶縁材料は、孔を有し、前記外部電気接触表面は、前記孔内に位置決めされている、マイクロ電子デバイス。 - 前記少なくとも1つの薄いパターン形成導電層及び前記絶縁材料は、生体適合性である、請求項1記載のマイクロ電子デバイス。
- 前記電気絶縁材料は、セラミックである、請求項2記載のマイクロ電子デバイス。
- 前記セラミックは、アルミナ、ジルコニア、又は窒化アルミニウムである、請求項3記載のマイクロ電子デバイス。
- 前記セラミックは、アルミナである、請求項3記載のマイクロ電子デバイス。
- 前記電気絶縁材料は、金属酸化物である、請求項3記載のマイクロ電子デバイス。
- 前記電気絶縁材料は、ポリマーである、請求項3記載のマイクロ電子デバイス。
- 前記少なくとも1つのパターン形成導電層の前記第1の層は、金、ニッケル、又はクロムから成る、請求項2記載のマイクロ電子デバイス。
- 前記少なくとも1つのパターン形成導電層の前記第1の層は、チタン層を含む、請求項2記載のマイクロ電子デバイス。
- 前記少なくとも1つのパターン形成導電層の第2の層が、少なくとも1つの生体適合性金属から成る、請求項2記載のマイクロ電子デバイス。
- 前記少なくとも1つのパターン形成導電層は、白金層を含む、請求項2記載のマイクロ電子デバイス。
- 前記チタン層上に形成された白金層を有する、請求項7記載のマイクロ電子デバイス。
- 前記少なくとも1つのパターン形成導電層は、少なくとも1つのチタン層上に形成された少なくとも1つの白金層を含む、請求項2記載のマイクロ電子デバイス。
- マイクロ電子デバイスを有する基板は、集積回路チップであり、前記電気接触パッドは、アルミニウム、アルミニウム合金、銅、又は銅合金である、請求項1記載のマイクロ電子デバイス。
- 第1のパターン形成導電層は、その横方向寸法が前記電気接触パッドよりも大きく、前記パターン形成導電層は、前記接触パッドの縁を越えて延びている、請求項1記載のマイクロ電子デバイス。
- 前記第1のパターン形成導電層は、チタンであり、少なくとも1つの上に位置する導電層は、白金である、請求項15記載のマイクロ電子デバイス。
- 前記導電層のうちの1つは、肩を構成している、請求項15記載のマイクロ電子デバイス。
- デバイスであって、
シリコン基板上に実装されたマイクロ電子デバイスを有し、前記マイクロ電子デバイスは、電気絶縁材料によって包囲された導電性接触パッドを有し、
前記接触パッド上に形成されていて前記接触パッドの縁を越えて延びる少なくとも1つの第1のパターン形成金属層を有し、
前記第1の金属層上に形成された少なくとも1つの第2のパターン形成金属層を有し、前記第2の金属層は、露出された上側接触面を有し、
前記マイクロ電子デバイス及び前記パターン形成層を気密的に包囲した電気絶縁材料層を有し、前記電気絶縁材料層は、前記上側接触面を露出させる孔を有する、デバイス。 - 前記第1の金属層は、少なくとも1つのパターン形成チタン層を含む、請求項18記載の植え込み型デバイス。
- 前記第2の層は、少なくとも1つのパターン形成白金層を含む、請求項18記載の植え込み型デバイス。
- 前記第1の層は、肩を構成している、請求項18記載の植え込み型デバイス。
- 電気接点を備えたデバイスを作製する方法であって、
接触パッドを備えた電気デバイスを用意するステップを有し、
少なくとも1つのパターン形成導電層を前記接触パッド上に形成するステップを有し、前記少なくとも1つの導電層は、前記接触パッド上に形成された第1の層及び電気接触頂面を有し、
結果的に得られた構造体を電気絶縁体内に気密封入するステップを有し、
前記電気絶縁体に孔を形成して前記電気接触面を露出させるステップを有する、方法。 - 前記電気接触面及び前記電気絶縁体は、生体適合性である、請求項22記載の方法。
- 前記構造体を生体適合性絶縁体内に気密封入する前記ステップは、セラミック材料のイオンビーム援用蒸着ステップを含む、請求項22記載の方法。
- 少なくとも1つのパターン形成導電層を形成する前記ステップは、少なくとも1つの金属のイオンビーム援用蒸着ステップを含む、請求項22記載の方法。
- 前記パターン形成金属層のうちの少なくとも1つは、チタン又はチタン合金である、請求項22記載の方法。
- 前記パターン形成金属層のうちの少なくとも1つは、白金又は白金合金である、請求項22記載の方法。
- チタンの少なくとも1つのパターン形成層及び白金の少なくとも1つのパターン形成層は、ビーム援用蒸着によって形成される、請求項22記載の方法。
- 前記第1のパターン形成導電層は、該第1のパターン形成導電層が前記接触パッドの縁を越えて延びるよう前記接触パッドよりも大きい、請求項22記載の方法。
- 孔を形成する前記ステップは、レーザ加工を含む、請求項22記載の方法。
- 犠牲層を前記電気接触頂面上に形成して前記電気接触頂面が次に行われる処理中に保護されるようにするステップと、しかる後、前記犠牲層を除去するステップとを更に有する、請求項22記載の方法。
- 前記導電層のうちの1つは、肩を構成する、請求項22記載の方法。
- 前記孔を金属で満たすステップを更に有する、請求項22記載の方法。
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US73288405P | 2005-11-02 | 2005-11-02 | |
PCT/US2006/043028 WO2007056183A1 (en) | 2005-11-02 | 2006-11-02 | Implantable microelectronic device and method of manufacture |
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US20120309134A1 (en) | 2012-12-06 |
AU2006311850A1 (en) | 2007-05-18 |
EP1949437A1 (en) | 2008-07-30 |
US20100197082A1 (en) | 2010-08-05 |
WO2007056183A1 (en) | 2007-05-18 |
US8258635B2 (en) | 2012-09-04 |
US8501547B2 (en) | 2013-08-06 |
EP1949437B2 (en) | 2021-08-04 |
US7709961B2 (en) | 2010-05-04 |
EP1949437B1 (en) | 2014-01-01 |
US20080048330A1 (en) | 2008-02-28 |
US20070096281A1 (en) | 2007-05-03 |
AU2006311850B2 (en) | 2011-06-16 |
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