JP2009283749A5 - - Google Patents

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Publication number
JP2009283749A5
JP2009283749A5 JP2008135210A JP2008135210A JP2009283749A5 JP 2009283749 A5 JP2009283749 A5 JP 2009283749A5 JP 2008135210 A JP2008135210 A JP 2008135210A JP 2008135210 A JP2008135210 A JP 2008135210A JP 2009283749 A5 JP2009283749 A5 JP 2009283749A5
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JP
Japan
Prior art keywords
crystal semiconductor
semiconductor layer
single crystal
substrate
layer
Prior art date
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Application number
JP2008135210A
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English (en)
Japanese (ja)
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JP2009283749A (ja
JP5414203B2 (ja
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Priority to JP2008135210A priority Critical patent/JP5414203B2/ja
Priority claimed from JP2008135210A external-priority patent/JP5414203B2/ja
Publication of JP2009283749A publication Critical patent/JP2009283749A/ja
Publication of JP2009283749A5 publication Critical patent/JP2009283749A5/ja
Application granted granted Critical
Publication of JP5414203B2 publication Critical patent/JP5414203B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008135210A 2008-05-23 2008-05-23 半導体装置の作製方法 Expired - Fee Related JP5414203B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008135210A JP5414203B2 (ja) 2008-05-23 2008-05-23 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008135210A JP5414203B2 (ja) 2008-05-23 2008-05-23 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009283749A JP2009283749A (ja) 2009-12-03
JP2009283749A5 true JP2009283749A5 (https=) 2011-06-23
JP5414203B2 JP5414203B2 (ja) 2014-02-12

Family

ID=41453885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008135210A Expired - Fee Related JP5414203B2 (ja) 2008-05-23 2008-05-23 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5414203B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819614B2 (ja) * 2011-02-02 2015-11-24 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
US20130187150A1 (en) * 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7835724B2 (ja) * 2021-02-25 2026-03-25 富士フイルム株式会社 欠陥除去装置、欠陥除去方法、パターン形成方法、及び電子デバイスの製造方法
CN120711990B (zh) * 2025-08-26 2025-10-28 中核光电科技(上海)有限公司 钙钛矿层的激光修复方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582633A (ja) * 1991-09-19 1993-04-02 Hitachi Ltd 貼りあわせ基体とその製造方法
JPH08250421A (ja) * 1995-03-10 1996-09-27 Canon Inc 半導体基板の製造方法および半導体基板
JPH11163363A (ja) * 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4519400B2 (ja) * 2001-12-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法

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