JP2009267391A - 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 - Google Patents

窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Download PDF

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Publication number
JP2009267391A
JP2009267391A JP2009079530A JP2009079530A JP2009267391A JP 2009267391 A JP2009267391 A JP 2009267391A JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009267391 A JP2009267391 A JP 2009267391A
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Japan
Prior art keywords
silicon nitride
nitride film
silicon
gas
range
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Pending
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JP2009079530A
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English (en)
Japanese (ja)
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JP2009267391A5 (https=
Inventor
Minoru Honda
稔 本多
Masayuki Kono
真之 鴻野
Tatsuo Nishida
辰夫 西田
Junya Miyahara
準弥 宮原
Toshio Nakanishi
敏雄 中西
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009079530A priority Critical patent/JP2009267391A/ja
Priority to PCT/JP2009/057006 priority patent/WO2009123325A1/ja
Priority to KR1020107021877A priority patent/KR20100129311A/ko
Priority to US12/935,138 priority patent/US8119545B2/en
Priority to TW098110757A priority patent/TW200952078A/zh
Publication of JP2009267391A publication Critical patent/JP2009267391A/ja
Publication of JP2009267391A5 publication Critical patent/JP2009267391A5/ja
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2009079530A 2008-03-31 2009-03-27 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Pending JP2009267391A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009079530A JP2009267391A (ja) 2008-03-31 2009-03-27 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置
PCT/JP2009/057006 WO2009123325A1 (ja) 2008-03-31 2009-03-30 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置
KR1020107021877A KR20100129311A (ko) 2008-03-31 2009-03-30 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치
US12/935,138 US8119545B2 (en) 2008-03-31 2009-03-30 Forming a silicon nitride film by plasma CVD
TW098110757A TW200952078A (en) 2008-03-31 2009-03-31 Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008092419 2008-03-31
JP2009079530A JP2009267391A (ja) 2008-03-31 2009-03-27 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置

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JP2009267391A true JP2009267391A (ja) 2009-11-12
JP2009267391A5 JP2009267391A5 (https=) 2012-08-09

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JP2009079530A Pending JP2009267391A (ja) 2008-03-31 2009-03-27 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133477A (ja) * 2017-02-16 2018-08-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2022144977A (ja) * 2021-03-19 2022-10-03 キオクシア株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
JPH1140753A (ja) * 1997-07-17 1999-02-12 Sony Corp 半導体装置およびその製造方法
JP2000183359A (ja) * 1998-10-07 2000-06-30 Furontekku:Kk 薄膜トランジスタとその製造方法および液晶表示装置ならびに薄膜成膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
JPH1140753A (ja) * 1997-07-17 1999-02-12 Sony Corp 半導体装置およびその製造方法
JP2000183359A (ja) * 1998-10-07 2000-06-30 Furontekku:Kk 薄膜トランジスタとその製造方法および液晶表示装置ならびに薄膜成膜装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133477A (ja) * 2017-02-16 2018-08-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2022144977A (ja) * 2021-03-19 2022-10-03 キオクシア株式会社 半導体装置の製造方法
JP7581098B2 (ja) 2021-03-19 2024-11-12 キオクシア株式会社 半導体装置の製造方法

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