JP2009253240A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009253240A5 JP2009253240A5 JP2008103146A JP2008103146A JP2009253240A5 JP 2009253240 A5 JP2009253240 A5 JP 2009253240A5 JP 2008103146 A JP2008103146 A JP 2008103146A JP 2008103146 A JP2008103146 A JP 2008103146A JP 2009253240 A5 JP2009253240 A5 JP 2009253240A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- crystal semiconductor
- protective layer
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008103146A JP5264018B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体基板の作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008103146A JP5264018B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体基板の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009253240A JP2009253240A (ja) | 2009-10-29 |
JP2009253240A5 true JP2009253240A5 (xx) | 2011-03-31 |
JP5264018B2 JP5264018B2 (ja) | 2013-08-14 |
Family
ID=41313603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008103146A Expired - Fee Related JP5264018B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体基板の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5264018B2 (xx) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6005364B2 (ja) * | 2012-02-06 | 2016-10-12 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法及び半導体装置 |
WO2013187079A1 (ja) * | 2012-06-15 | 2013-12-19 | 住友化学株式会社 | 複合基板の製造方法および複合基板 |
JP6254234B2 (ja) * | 2016-09-07 | 2017-12-27 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP2018032877A (ja) * | 2017-11-29 | 2018-03-01 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP2020077710A (ja) * | 2018-11-06 | 2020-05-21 | 信越半導体株式会社 | 発光素子用半導体基板の製造方法及び発光素子の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2751261B2 (ja) * | 1988-11-16 | 1998-05-18 | ソニー株式会社 | 半導体基体の張り合わせ方法 |
JP3943782B2 (ja) * | 1999-11-29 | 2007-07-11 | 信越半導体株式会社 | 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ |
JP4289837B2 (ja) * | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びsoiウエハの製造方法 |
JP4624131B2 (ja) * | 2005-02-22 | 2011-02-02 | 三洋電機株式会社 | 窒化物系半導体素子の製造方法 |
-
2008
- 2008-04-11 JP JP2008103146A patent/JP5264018B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009111375A5 (xx) | ||
JP2009152565A5 (xx) | ||
JP2008311621A5 (xx) | ||
JP2009260295A5 (ja) | 半導体基板の作製方法 | |
JP2008311635A5 (xx) | ||
JP2009004736A5 (xx) | ||
WO2006095566A8 (en) | Nitride semiconductor light-emitting device and method for fabrication thereof | |
JP2009003434A5 (xx) | ||
JP2009111363A5 (xx) | ||
TWI456752B (zh) | 半導體影像感測裝置及半導體影像感測元件與其形成方法 | |
JP2012028755A5 (ja) | 分離方法および半導体素子の作製方法 | |
JP2009111371A5 (xx) | ||
TWI456689B (zh) | Soi晶圓的製造方法 | |
EP1978554A3 (en) | Method for manufacturing semiconductor substrate comprising implantation and separation steps | |
JP2009076706A5 (xx) | ||
WO2009004889A1 (ja) | 薄膜シリコンウェーハ及びその作製法 | |
JP2009135469A5 (xx) | ||
JP2009158942A5 (xx) | ||
JP2009135472A5 (xx) | ||
JP2009253240A5 (xx) | ||
JP2010093241A5 (xx) | ||
TW200640283A (en) | Method of manufacturing an organic electronic device | |
JP2010251724A5 (xx) | ||
TW200623948A (en) | Manufacturing method for organic electronic device | |
JP2010103515A5 (xx) |