JP2009246210A - 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 - Google Patents

窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Download PDF

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Publication number
JP2009246210A
JP2009246210A JP2008092418A JP2008092418A JP2009246210A JP 2009246210 A JP2009246210 A JP 2009246210A JP 2008092418 A JP2008092418 A JP 2008092418A JP 2008092418 A JP2008092418 A JP 2008092418A JP 2009246210 A JP2009246210 A JP 2009246210A
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Prior art keywords
silicon nitride
gas
nitride film
silicon
plasma cvd
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JP2008092418A
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Japanese (ja)
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JP2009246210A5 (https=
Inventor
Minoru Honda
稔 本多
Toshio Nakanishi
敏雄 中西
Masayuki Kono
真之 鴻野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008092418A priority Critical patent/JP2009246210A/ja
Priority to PCT/JP2009/057006 priority patent/WO2009123325A1/ja
Priority to KR1020107021877A priority patent/KR20100129311A/ko
Priority to US12/935,138 priority patent/US8119545B2/en
Priority to TW098110757A priority patent/TW200952078A/zh
Publication of JP2009246210A publication Critical patent/JP2009246210A/ja
Publication of JP2009246210A5 publication Critical patent/JP2009246210A5/ja
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008092418A 2008-03-31 2008-03-31 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Pending JP2009246210A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008092418A JP2009246210A (ja) 2008-03-31 2008-03-31 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置
PCT/JP2009/057006 WO2009123325A1 (ja) 2008-03-31 2009-03-30 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置
KR1020107021877A KR20100129311A (ko) 2008-03-31 2009-03-30 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치
US12/935,138 US8119545B2 (en) 2008-03-31 2009-03-30 Forming a silicon nitride film by plasma CVD
TW098110757A TW200952078A (en) 2008-03-31 2009-03-31 Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008092418A JP2009246210A (ja) 2008-03-31 2008-03-31 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置

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JP2009246210A true JP2009246210A (ja) 2009-10-22
JP2009246210A5 JP2009246210A5 (https=) 2012-08-09

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JP2008092418A Pending JP2009246210A (ja) 2008-03-31 2008-03-31 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014075493A (ja) * 2012-10-04 2014-04-24 Tokyo Electron Ltd 成膜方法及び成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195562A (ja) * 1987-10-07 1989-04-13 Matsushita Electron Corp 不揮発性記憶装置の製造方法
JPH0582795A (ja) * 1991-08-22 1993-04-02 Rohm Co Ltd 半導体記憶装置
WO2007139142A1 (ja) * 2006-05-31 2007-12-06 Tokyo Electron Limited プラズマｃｖｄ方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195562A (ja) * 1987-10-07 1989-04-13 Matsushita Electron Corp 不揮発性記憶装置の製造方法
JPH0582795A (ja) * 1991-08-22 1993-04-02 Rohm Co Ltd 半導体記憶装置
WO2007139142A1 (ja) * 2006-05-31 2007-12-06 Tokyo Electron Limited プラズマｃｖｄ方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマｃｖｄ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014075493A (ja) * 2012-10-04 2014-04-24 Tokyo Electron Ltd 成膜方法及び成膜装置

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