JP2009242228A - ガラス・セラミックの製造方法及びそのガラス・セラミックの使用 - Google Patents
ガラス・セラミックの製造方法及びそのガラス・セラミックの使用 Download PDFInfo
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- JP2009242228A JP2009242228A JP2009038750A JP2009038750A JP2009242228A JP 2009242228 A JP2009242228 A JP 2009242228A JP 2009038750 A JP2009038750 A JP 2009038750A JP 2009038750 A JP2009038750 A JP 2009038750A JP 2009242228 A JP2009242228 A JP 2009242228A
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- 239000002241 glass-ceramic Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 238000002468 ceramisation Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000015556 catabolic process Effects 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 239000013081 microcrystal Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 229910002367 SrTiO Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 229910002115 bismuth titanate Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 230000005343 Curie-Weiss law Effects 0.000 description 1
- TZUJJFSWGWSURU-UHFFFAOYSA-L [O-]OOO[O-].[Ba+2] Chemical compound [O-]OOO[O-].[Ba+2] TZUJJFSWGWSURU-UHFFFAOYSA-L 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 235000010288 sodium nitrite Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
- C03B32/02—Thermal crystallisation, e.g. for crystallising glass bodies into glass-ceramic articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0072—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition having a ferro-electric crystal phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Thermal Sciences (AREA)
- Glass Compositions (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Memories (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
【解決手段】最大直径20〜100nmの強誘電性微結晶が得られガラス・セラミック中の強誘電性微結晶の比率が少なくとも50容積%、ガラス・セラミック中の非強誘電性微結晶の比率が10容積%未満、ガラス・セラミック内に有るポアが0.01容積%未満であり、且つe’・V2 maxの値が少なくとも20(MV/cm)2であるガラス・セラミック(ここで、e’は1kHzにおけるガラス・セラミックの比誘電率、Vmaxは絶縁破壊電圧/ガラス・セラミック厚さである)であり、出発ガラスを生成する工程と、該出発ガラスをセラミック化中少なくとも10K/minの加熱又は冷却速度でセラミック化してガラス・セラミックを生ずる工程を含んで成る方法。
【選択図】図1
Description
表1に、出発ガラスのガラス組成を示す。出発ガラスの番号(VSM)は以下の通りであり。即ち、31229、30209、31211、30211、30963、31210、30210、B、Cである。
セラミック化出発ガラス、即ち結果として生じたガラス・セラミック(適すれば、表2によるセラミック化番号で示される)が以下に示される比誘電率e’が測定された。
30963:(1KHzにおける)e’=DE1において350
31210:(1KHzにおける)e’=DE3において17、
(1KHzにおける)e’=DE11において38
31229:(1KHzにおける)e’=1100
31229:(1KHzにおける)e’=10000
h その構造化接点のスペーシング
Claims (5)
- ガラス・セラミックの製造方法であって、最大直径20〜100nmの強誘電性微結晶が得られガラス・セラミック中の強誘電性微結晶の比率が少なくとも50容積%、ガラス・セラミック中の非強誘電性微結晶の比率が10容積%未満、ガラス・セラミック内に有る空隙が0.01容積%未満であり、且つe’・V2 maxの値が少なくとも20(MV/cm)2であるガラス・セラミック(ここで、e’は1kHzにおけるガラス・セラミックの比誘電率、Vmaxは絶縁破壊電圧/ガラス・セラミック厚さである)であり、
出発ガラスを生成する工程と、該出発ガラスをセラミック化中少なくとも10K/minの加熱又は冷却速度でセラミック化してガラス・セラミックを生ずる工程を含んで成る方法。 - 得られる強誘電性微結晶がペロブスカイト構造であることを特徴とする請求項1に記載の方法。
- 得られる強誘電性微結晶が本質的に、純又はドープドBaTiO3及び又は純又はドープドBaTi2O5から成ることを特徴とする請求項1に記載の方法。
- 得られる強誘電性微結晶のガラス・セラミック中の比率が>60容積%、特に>70容積%、特に好ましくは>80容積%であることを特徴とする請求項1〜3の少なくとも1つに記載の方法。
- 請求項1〜4の少なくとも1つに記載の方法により製造されたガラス・セラミックの、コンデンサ又は高周波フィルタの構成要素としての使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008011206.2 | 2008-02-26 | ||
DE102008011206A DE102008011206B4 (de) | 2008-02-26 | 2008-02-26 | Verfahren zur Herstellung einer Glaskeramik und Verwendung einer Glaskeramik laskeramik |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009242228A true JP2009242228A (ja) | 2009-10-22 |
JP4947736B2 JP4947736B2 (ja) | 2012-06-06 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2009038750A Expired - Fee Related JP4947736B2 (ja) | 2008-02-26 | 2009-02-23 | ガラス・セラミックの製造方法及びそのガラス・セラミックの使用 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8141387B2 (ja) |
JP (1) | JP4947736B2 (ja) |
DE (1) | DE102008011206B4 (ja) |
Cited By (2)
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JP2015509065A (ja) * | 2011-11-24 | 2015-03-26 | ショット アクチエンゲゼルシャフトSchott AG | 高周波数領域における誘電体としてのガラスセラミック |
KR20160051634A (ko) * | 2014-10-29 | 2016-05-11 | 쇼오트 아게 | 세라믹화 가능한 녹색 유리 성분의 제조 방법, 및 세라믹화 가능한 녹색 유리 성분, 및 유리 세라믹 물품 |
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DE102009024645B4 (de) | 2009-06-04 | 2011-06-01 | Schott Ag | Glaskeramik mit nanoskaligem Bariumtitanat, Verfahren zu deren Herstellung und Verwendung |
CN101967056A (zh) * | 2010-10-19 | 2011-02-09 | 郑州大学 | 一种二钛酸钡铁电陶瓷的激光合成方法 |
DE102011119804B4 (de) * | 2011-11-24 | 2019-02-07 | Schott Ag | Dielektrikum für den Hochfrequenzbereich und seine Verwendung |
US9255033B2 (en) | 2013-08-16 | 2016-02-09 | Schott Corporation | Piezoelectric glass ceramic compositions and piezoelectric devices made therefrom |
DE102014106919B4 (de) | 2014-05-16 | 2016-05-04 | Schott Ag | Verfahren zur Konstruktion und Herstellung von Glaskeramik Kondensatoren für Hochspannungsanwendungen und nach dem Verfahren bemessener und hergestellter Glaskeramik-Kondensator |
US9686862B2 (en) * | 2014-09-23 | 2017-06-20 | Finisar Corporation | Capacitors for multilayer printed circuit boards |
DE102015005778B3 (de) * | 2015-05-08 | 2016-07-14 | Schott Ag | Hochspannungskondensator, Dielektrika mit definierter Oberflächenrauhigkeit für Hochleistungskondensatoren, sowie Verfahren zur Herstellung eines Dielektrikums |
DE102015110422A1 (de) * | 2015-06-29 | 2016-12-29 | Schott Ag | Laserbearbeitung eines mehrphasigen transparenten Materials, sowie mehrphasiger Kompositwerkstoff |
US20170362119A1 (en) | 2016-06-17 | 2017-12-21 | Corning Incorporated | Transparent, near infrared-shielding glass ceramic |
US10246371B1 (en) | 2017-12-13 | 2019-04-02 | Corning Incorporated | Articles including glass and/or glass-ceramics and methods of making the same |
US10450220B2 (en) * | 2017-12-13 | 2019-10-22 | Corning Incorporated | Glass-ceramics and glasses |
US20190245056A1 (en) * | 2018-02-02 | 2019-08-08 | International Business Machines Corporation | Ferroelectric devices free of extended grain boundaries |
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CN114890676B (zh) * | 2021-06-21 | 2023-07-07 | 桂林电子科技大学 | 一种高介电高储能微晶玻璃介质材料及其制备方法 |
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Cited By (6)
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JP2015509065A (ja) * | 2011-11-24 | 2015-03-26 | ショット アクチエンゲゼルシャフトSchott AG | 高周波数領域における誘電体としてのガラスセラミック |
KR20160051634A (ko) * | 2014-10-29 | 2016-05-11 | 쇼오트 아게 | 세라믹화 가능한 녹색 유리 성분의 제조 방법, 및 세라믹화 가능한 녹색 유리 성분, 및 유리 세라믹 물품 |
JP2016088841A (ja) * | 2014-10-29 | 2016-05-23 | ショット アクチエンゲゼルシャフトSchott AG | セラミック化可能なグリーンガラス材料の製造方法、及びセラミック化可能なグリーンガラス材料、及びガラスセラミック製品 |
TWI686360B (zh) * | 2014-10-29 | 2020-03-01 | 德商首德公司 | 可陶瓷化生玻璃組件之製造方法、可陶瓷化生玻璃組件及玻璃陶瓷物件 |
JP2020079203A (ja) * | 2014-10-29 | 2020-05-28 | ショット アクチエンゲゼルシャフトSchott AG | セラミック化可能なグリーンガラス材料の製造方法、及びセラミック化可能なグリーンガラス材料、及びガラスセラミック製品 |
KR102403027B1 (ko) * | 2014-10-29 | 2022-05-26 | 쇼오트 아게 | 세라믹화 가능한 녹색 유리 성분의 제조 방법, 및 세라믹화 가능한 녹색 유리 성분, 및 유리 세라믹 물품 |
Also Published As
Publication number | Publication date |
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DE102008011206B4 (de) | 2011-05-05 |
US8141387B2 (en) | 2012-03-27 |
DE102008011206A1 (de) | 2009-09-10 |
US20090215605A1 (en) | 2009-08-27 |
JP4947736B2 (ja) | 2012-06-06 |
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