JP2009200416A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2009200416A
JP2009200416A JP2008043014A JP2008043014A JP2009200416A JP 2009200416 A JP2009200416 A JP 2009200416A JP 2008043014 A JP2008043014 A JP 2008043014A JP 2008043014 A JP2008043014 A JP 2008043014A JP 2009200416 A JP2009200416 A JP 2009200416A
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JP
Japan
Prior art keywords
terminal block
substrate
resin
mold
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008043014A
Other languages
English (en)
Japanese (ja)
Inventor
Toshiaki Shinohara
利彰 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2008043014A priority Critical patent/JP2009200416A/ja
Priority to DE102008045581A priority patent/DE102008045581A1/de
Priority to CN200810215882.8A priority patent/CN101521167A/zh
Publication of JP2009200416A publication Critical patent/JP2009200416A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
JP2008043014A 2008-02-25 2008-02-25 半導体装置および半導体装置の製造方法 Withdrawn JP2009200416A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008043014A JP2009200416A (ja) 2008-02-25 2008-02-25 半導体装置および半導体装置の製造方法
DE102008045581A DE102008045581A1 (de) 2008-02-25 2008-09-03 Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung
CN200810215882.8A CN101521167A (zh) 2008-02-25 2008-09-05 半导体装置及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008043014A JP2009200416A (ja) 2008-02-25 2008-02-25 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2009200416A true JP2009200416A (ja) 2009-09-03

Family

ID=40953165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008043014A Withdrawn JP2009200416A (ja) 2008-02-25 2008-02-25 半導体装置および半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP2009200416A (de)
CN (1) CN101521167A (de)
DE (1) DE102008045581A1 (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131679A1 (ja) * 2009-05-14 2010-11-18 ローム株式会社 半導体装置
US8519265B2 (en) 2009-09-18 2013-08-27 Kabushiki Kaisha Toshiba Power module
US8829534B2 (en) 2010-06-01 2014-09-09 Mitsubishi Electric Corporation Power semiconductor device
JP2014192447A (ja) * 2013-03-28 2014-10-06 Denso Corp 電子制御ユニット及びその製造方法
WO2016199635A1 (ja) * 2015-06-08 2016-12-15 ローム株式会社 パワーモジュール半導体装置およびその製造方法、およびインバータ装置
CN110880480A (zh) * 2018-09-06 2020-03-13 三菱电机株式会社 半导体装置、电力转换装置及半导体装置的制造方法
CN111092057A (zh) * 2019-12-12 2020-05-01 袁晓华 一种用于物联网终端的密集排布半导体芯片的封装方法
JP2021182604A (ja) * 2020-05-20 2021-11-25 三菱電機株式会社 半導体装置
WO2022085068A1 (ja) * 2020-10-20 2022-04-28 三菱電機株式会社 半導体装置
US11955413B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11955451B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11961790B2 (en) 2020-10-14 2024-04-16 Rohm Co., Ltd. Semiconductor module

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5383621B2 (ja) * 2010-10-20 2014-01-08 三菱電機株式会社 パワー半導体装置
JP6488752B2 (ja) * 2015-02-19 2019-03-27 株式会社オートネットワーク技術研究所 基板ユニット
US10175733B2 (en) * 2015-07-17 2019-01-08 Intersil Americas LLC Systems and methods for substrates
JP6798436B2 (ja) * 2017-07-12 2020-12-09 株式会社オートネットワーク技術研究所 回路装置、回路装置の製造方法、およびコネクタ
JP6764389B2 (ja) * 2017-10-12 2020-09-30 矢崎総業株式会社 半導体モジュールユニット

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722722A (ja) 1993-07-05 1995-01-24 Mitsubishi Electric Corp 樹脂成形タイプの電子回路装置
JP3491481B2 (ja) 1996-08-20 2004-01-26 株式会社日立製作所 半導体装置とその製造方法
JPH10242344A (ja) 1997-03-03 1998-09-11 Yamaha Motor Co Ltd 電力用半導体装置
JPH11254478A (ja) 1998-03-13 1999-09-21 Mitsubishi Eng Plast Corp 樹脂封止された光学的な半導体の製造方法
JP2001237252A (ja) 2000-02-22 2001-08-31 Hitachi Ltd 半導体装置とそれを用いた電子装置
JP3884354B2 (ja) 2002-09-13 2007-02-21 株式会社日立製作所 コネクタと電子部品の一体モールド構造を有する電気・電子モジュール

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
US9490200B2 (en) 2009-05-14 2016-11-08 Rohm Co., Ltd. Semiconductor device
WO2010131679A1 (ja) * 2009-05-14 2010-11-18 ローム株式会社 半導体装置
US8519265B2 (en) 2009-09-18 2013-08-27 Kabushiki Kaisha Toshiba Power module
US8829534B2 (en) 2010-06-01 2014-09-09 Mitsubishi Electric Corporation Power semiconductor device
JP2014192447A (ja) * 2013-03-28 2014-10-06 Denso Corp 電子制御ユニット及びその製造方法
WO2016199635A1 (ja) * 2015-06-08 2016-12-15 ローム株式会社 パワーモジュール半導体装置およびその製造方法、およびインバータ装置
JP2017005043A (ja) * 2015-06-08 2017-01-05 ローム株式会社 パワーモジュール半導体装置およびその製造方法、およびインバータ装置
CN110880480A (zh) * 2018-09-06 2020-03-13 三菱电机株式会社 半导体装置、电力转换装置及半导体装置的制造方法
CN110880480B (zh) * 2018-09-06 2023-05-02 三菱电机株式会社 半导体装置、电力转换装置及半导体装置的制造方法
CN111092057B (zh) * 2019-12-12 2022-04-29 袁晓华 一种用于物联网终端的密集排布半导体芯片的封装方法
CN111092057A (zh) * 2019-12-12 2020-05-01 袁晓华 一种用于物联网终端的密集排布半导体芯片的封装方法
JP2021182604A (ja) * 2020-05-20 2021-11-25 三菱電機株式会社 半導体装置
JP7337027B2 (ja) 2020-05-20 2023-09-01 三菱電機株式会社 半導体装置
US11955413B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11955414B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11955451B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11955452B2 (en) 2020-10-14 2024-04-09 Rohm Co., Ltd. Semiconductor module
US11961790B2 (en) 2020-10-14 2024-04-16 Rohm Co., Ltd. Semiconductor module
WO2022085068A1 (ja) * 2020-10-20 2022-04-28 三菱電機株式会社 半導体装置
JP7455222B2 (ja) 2020-10-20 2024-03-25 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
DE102008045581A1 (de) 2009-09-17
CN101521167A (zh) 2009-09-02

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Effective date: 20110510