JP2009171065A - Solid imaging apparatus, method for manufacturing solid imaging apparatus and photographing device using solid imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a miniaturized, thinner, and reliable solid imaging apparatus. <P>SOLUTION: The solid imaging apparatus includes a sensor chip 3, a lens 4, a transparent substrate 5 and a spacer 11A. Sealing resin 6 covers the sensor chip 3 and the transparent substrate 5 disposed to face at an effective pixel area 3a on the sensor chip 3. The spacer 11A for preventing the lens 4 from peeling off is arranged on the sealing resin 6 so as to enclose the transparent substrate 5. The lens 4 is formed on the transparent substrate 5. A part of the lens 4 protruded from the transparent substrate 5 is formed on the spacer 11A. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device that captures an image of a subject using a solid-state imaging device on which a light-receiving element is formed, a manufacturing method thereof, and an imaging apparatus using the solid-state imaging device.

  An imaging device such as a digital camera or a video camera converts light from a subject into an electrical signal and forms image data of the subject based on the electrical signal. The imaging device includes a solid-state imaging device that is an imaging unit that recognizes light from a subject imaged by an imaging lens. The light recognized by the solid-state imaging device is converted into an electrical signal by a solid-state imaging device inside the solid-state imaging device and output as an electrical signal. An image of the subject is formed in the processing unit of the photographing apparatus based on the output electric signal.

  As a conventional configuration of the solid-state imaging device as described above, a configuration in which the solid-state imaging device is housed in a unit case provided with a parallel flat plate-like protective glass can be exemplified. The protective glass prevents entry of foreign matter into the unit case such as dust and dust, and contact of other members with the solid-state imaging device in the manufacturing process of the solid-state imaging device without preventing light from entering. That is, the protective glass is a member that protects the solid-state imaging device from adverse effects on the solid-state imaging device, such as adhesion of foreign substances and damage to the device due to physical causes.

  The angle of light incident on the solid-state imaging device when the solid-state imaging device having such a configuration is applied to the imaging apparatus will be described with reference to FIG.

  As shown in FIG. 9, the light transmitted through the imaging lens reaches the solid-state imaging device 102 through the protective glass 101. An imaginary line O-O ′ represents the central axis of the light transmitted through the imaging lens.

  Of the light incident on the solid-state imaging device 102, the light incident on a position away from the virtual line O-O 'has an angle that spreads outward from the virtual line O-O'. When light enters the protective glass 101, it is refracted inward, but when emitted from the protective glass 101, it is emitted as light parallel to the incident light on the protective glass 101. That is, light that has an angle away from the imaginary line O-O ′ enters the solid-state image sensor 102 as it is located outside the solid-state image sensor 102.

  If the incident light has an angle that leaves the imaginary line OO ′ to the outside, the incident efficiency to the solid-state imaging device 102 is lowered, and thus it is difficult to efficiently convert the light into an electric signal. Become.

  When a solid-state imaging device having a parallel flat plate-like protective glass as described above is applied to an imaging device and the solid-state imaging device is reduced in size and thickness, inevitably light transmitted through the imaging lens is transmitted. Widen the angle. Due to the widening of the light, the difference in incident efficiency between the central portion and the peripheral portion of the solid-state imaging device is further enlarged, and thus there arises a problem that the peripheral portion becomes extremely dark when the formed image is viewed.

  When a transparent plane-parallel plate-like member is used as a protective member for the solid-state imaging device, the following problems occur in addition to such problems.

  CCD (charge coupled device) and CMOS (Complementary Metal Oxide Semiconductor) devices that are often used as solid-state imaging devices can convert light of a relatively wide wavelength into electrical signals. For example, CCD and CMOS devices can convert light having a wavelength not only in the visible light region but also in the near infrared region (750 to 2500 nm) into an electrical signal.

  However, when it is used as a normal camera, it is not meaningless that the solid-state imaging device converts near infrared rays into an electric signal, but it causes deterioration in image quality such as a decrease in resolution and image unevenness. For this reason, normally, near-infrared rays are cut out of incident light by inserting colored glass or the like as an infrared cut filter into an optical system such as a video camera. In recent years, in order to reduce the cost and size of an apparatus, a method of reflecting near infrared rays and cutting it by forming an inexpensive dielectric multilayer film as an infrared cut filter on a protective glass has been adopted.

  Here, the dielectric multilayer film has an angle dependency in which the range of the wavelength of the reflected light changes depending on the angle of the incident light. As the incident angle of light increases, the wavelength range of light that can be reflected by the dielectric multilayer film shifts to a shorter wavelength. That is, the larger the incident angle of light, the more easily the dielectric multilayer film reflects light having a shorter wavelength than that of near infrared rays. In other words, the larger the incident angle of light, the lower the function of the dielectric multilayer film as an infrared cut filter.

  For this reason, the image formed based on the electrical signal converted by the solid-state imaging device becomes bluish as it goes from the center to the periphery. Therefore, it is impossible to sufficiently prevent deterioration in image quality such as a decrease in resolution and image unevenness.

  In order to solve the above-described problem of deterioration in image quality in the peripheral portion of an image, an image sensor unit (solid-state imaging device) in which a lens is formed on the upper part of a protective glass is disclosed in Patent Document 1. Patent Document 2 discloses a method for manufacturing a dielectric multilayer filter having a resin focusing lens and a solid-state imaging device (solid-state imaging device).

  FIG. 10 shows the solid-state imaging device of Patent Document 1, FIG. 11 and FIG. 12 show the manufacturing method of the dielectric multilayer filter of Patent Document 2, and the solid-state imaging device using the dielectric multilayer filter manufactured by the manufacturing method. Will be described.

  As shown in FIG. 10, the solid-state imaging device disclosed in Patent Document 1 protects the unit case 112, the sensor chip 114 disposed in the unit case 112, the lens unit 116 formed on the sensor chip 114, and the sensor chip 114. Protective glass 115 is provided. On the light incident surface side of the solid-state imaging device, a crystal filter 111 for splitting the light beam into two by the birefringence of crystal and an imaging lens 110 for imaging light from the subject are provided. An imaginary line O represents the central axis of light incident from the imaging lens 110.

  Here, the lens unit 116 includes one microlens 116 a formed for each of a plurality of light receiving pixels constituting the sensor chip 114. The protective glass 115 includes a flat glass plate 115a and a lens portion 115b, and the glass plate 115a and the lens portion 115b are integrally formed. The lens portion 115b is formed on the light incident surface side of the glass plate 115a. The lens portion 115b formed on the protective glass 115 has an afocal lens function that does not have an imaging function.

  Since the solid-state imaging device of Patent Document 1 includes the lens portion 115b, the light incident on the peripheral portion of the sensor chip 114 is refracted so as to be substantially parallel to the virtual line O. Accordingly, it is possible to suppress a decrease in light incident efficiency in the peripheral portion of the sensor chip 114 and achieve uniformity of the entire obtained image.

  As shown in FIG. 12, the solid-state imaging device 130 of Patent Document 2 includes a unit case 136, a sensor chip 135 disposed in the unit case 136, and a dielectric multilayer filter formed on the sensor chip 135. 131 is provided. The dielectric multilayer filter 131 includes a light transmissive substrate 134 that protects the sensor chip 135, a dielectric multilayer film 133 formed on the light incident side surface of the light transmissive substrate 134, and a resin focusing lens 132. Yes.

  An optical system 140 for imaging light from a subject is provided on the light incident surface side of the solid-state imaging device 130. An arrow L0 indicates a path of light incident on the center of the sensor chip 135, and an arrow L2 indicates a path of light incident near the outer periphery of the sensor chip 135.

  The light traveling on the arrow L2 is refracted so as to be more parallel to the arrow L0 on the light incident surface of the resin focusing lens 132. Therefore, the light emitted from the resin focusing lens 132 and incident on the dielectric multilayer film 133 becomes nearly parallel to the light traveling on the arrow L0 as compared to before entering the resin focusing lens 132. That is, even light incident near the outer periphery of the solid-state imaging device 130 can be incident on the dielectric multilayer film 133 at a relatively vertical angle.

  For this reason, the solid-state imaging device 130 can cut unnecessary infrared rays by appropriately correcting the angle of light incident near the outer periphery thereof. Therefore, it is possible to prevent a decrease in resolution and color unevenness of the entire image.

  Here, as shown in FIG. 11, the manufacturing method of the dielectric multilayer filter of Patent Document 2 includes manufacturing processes such as S101 to S105.

  First, a large-area light-transmitting substrate 134 and a convex mold 137 are prepared (S101). A dielectric multilayer film 133 is formed on one surface of the light transmissive substrate 134 in advance. The convex mold 137 has a concave cavity 137a for transferring the convex surface of the resin focusing lens 132 and a flat forming surface 137b.

  A light-transmitting substrate 134 having a large area and a convex mold 137 are overlapped. The photocurable resin 138 is filled either before or after the light transmissive substrate 134 and the convex mold 137 are overlaid. Then, the photocurable resin 138 is cured by irradiating ultraviolet rays from the light transmitting substrate 134 side (S102).

  The convex mold 137 is separated from the transparent substrate 134 after the ultraviolet irradiation (S103). Thus, a transmissive substrate 134 (formed body) on which a plurality of resin focusing lenses 132 are formed can be manufactured.

  The dielectric multilayer filter 131 having the plurality of resin focusing lenses 132 formed thereon is cut along the cutting line 139 (S104).

  As a result, a plurality of dielectric multilayer filters 131 can be manufactured (S105).

  As described above, when the dielectric multilayer filter manufacturing method of Patent Document 2 is adopted, a plurality of dielectric multilayer filters 131 capable of efficiently cutting near-infrared rays regardless of the incident position of light can be obtained once. It can be easily manufactured in the manufacturing process. Furthermore, since the lens is made of a photocurable resin, unlike the case where the lens is formed using glass, it is easy to mold the lens surface into a desired shape.

  Here, in order to achieve miniaturization and thinning of products such as camera-equipped mobile phones and PDAs (Personal Digital Assistants), there is an increasing demand for miniaturization and thinning of camera modules to be mounted on them. .

  However, in the solid-state imaging device shown in FIGS. 10 and 12, the protective glass 115 and the dielectric multilayer filter 131 which are members for protecting the solid-state imaging element are larger than the planar size (size) of the solid-state imaging element. It must be formed. The reason for this will be described below.

  In order to capture an image of a subject using an imaging device, it is necessary to output an electrical signal obtained by converting light from the subject by a solid-state imaging device to a processing unit outside the solid-state imaging device. Naturally, wiring is necessary for outputting electric signals. As this wiring, the solid-state imaging device and the processing unit are usually connected by a bonding wire. Since the bonding wires are connected so as to protrude outside the solid-state image sensor, the unit case needs to be formed sufficiently larger than the solid-state image sensor. As a result, the protective glass 115 and the dielectric multilayer filter 131 must be enlarged. Therefore, the solid-state imaging device as described above has a structure unsuitable for downsizing.

  Furthermore, in order not to bring the bonding wire into contact with the protective glass 115, the dielectric multilayer filter 131, etc., it is necessary to form the unit case sufficiently high, so it is difficult to reduce the thickness of the solid-state imaging device as described above. is there.

  Here, Patent Document 3 discloses an optical device module that can be easily reduced in size and thickness. The structure of the optical device module of Patent Document 3 will be described below with reference to FIG.

  As shown in FIG. 13, the optical device module of Patent Document 3 includes a wiring board 142 having a plurality of conductor wirings 150 formed on both sides, and a DSP (Digital Signal Processor) for image processing formed on the wiring board 142. 144, a solid-state imaging device 141 bonded to the DSP 144 via the spacer 143, a sealing resin 148 that seals a part of the wiring substrate 142 and the side surface of the solid-state imaging device 141, and a lens holding that is fixed on the sealing resin 148 And a lens 151 that is disposed so as to face the solid-state imaging device 141 and functions as an optical path demarcating device that defines an optical path to the solid-state imaging device 141.

  The solid-state imaging device 141 includes a sensor chip 146, a light-transmitting substrate 145 disposed so as to face the effective pixel region of the sensor chip 146, and an adhesive portion 147 that bonds the sensor chip 146 and the light-transmitting substrate 145. Has been. A bonding wire 149 for electrically connecting the wiring substrate 142 and the sensor chip 146 is connected to the outside of the bonding portion 147. The sensor chip 146 and DSP 144 and the wiring board 142 are electrically connected via bonding wires 149. Further, an adhesive portion 147 is disposed along the effective pixel region on the sensor chip 146. Furthermore, a light-transmitting substrate 145 having a plane size smaller than that of the sensor chip 146 and the sensor chip 146 are bonded via an adhesive portion 147.

  Since the effective pixel region on the sensor chip 146 can be sealed using the light transmissive substrate 145 having a small planar dimension, the light transmissive substrate 145 does not interfere with the wired bonding wires 149. Therefore, the light transmissive substrate 145 can be disposed in the vicinity of the sensor chip 146.

That is, a space for avoiding contact between the bonding wire 149 and another member becomes unnecessary. The solid-state imaging device 141 can be reduced in size and thickness as much as it is not necessary to provide such a space. As a result, the entire optical device module can be easily reduced in size and thickness.
JP 11-97659 A (published on April 9, 1999) JP 2005-234038 A (published September 2, 2005) JP 2004-296453 A (published October 21, 2004)

  However, when the solid-state imaging devices of Patent Documents 1 and 2 are applied to an imaging device, the following problems occur.

  In Patent Documents 1 and 2, protective glass 115 and dielectric multilayer filter 131, which are protective members on which lenses are formed, cover unit cases 112 and 136, respectively. If the protective glass 115 and the dielectric multilayer filter 131 are not attached so as to be parallel to the sensor chips 114 and 135, which are solid-state image sensors, respectively, the central axis of the light beam incident on the solid-state image sensor and the central axis of the lens Do not coincide with each other and have a large angle. The angular deviation between the two central axes enlarges the aberration of light incident on the solid-state image sensor, causing distortion and blurring of the formed image. In order to attach the protective glass 115 and the dielectric multilayer filter 131 accurately, it is important that the shapes of the unit cases 112 and 136 are formed with high accuracy. However, in order to increase the accuracy of the shape of the unit cases 112 and 136, an increase in cost in the manufacturing process cannot be avoided.

  In addition, in the manufacturing method of the dielectric multilayer filter 131 of Patent Document 2, it is described that after the dielectric multilayer film 133 is formed on one or both surfaces of the light transmissive substrate 134, the resin focusing lens 132 is formed. Yes.

  Normally, the dielectric multilayer film is composed of 40 to 50 multilayer films. When the dielectric multilayer film is formed only on one surface of the light transmissive substrate, the light transmittance is caused by the film stress of the dielectric multilayer film. The substrate is warped. When the resin focusing lens is formed on the light transmissive substrate with warping, the warp of the light transmitting substrate is transmitted to the resin focusing lens, and in particular, the peripheral portion of the resin focusing lens is deformed. If the resin focusing lens is deformed, the incident angle of light cannot be properly corrected. Therefore, the deformation of the resin focusing lens greatly reduces the yield rate of products.

  For example, if the light-transmitting substrate on which the dielectric multilayer film is formed before the resin focusing lens is formed by dicing, the film stress can be released or reduced to a negligible level. However, if dicing is performed first, it becomes impossible to simplify the manufacturing process and reduce the cost.

  In addition, when the dielectric multilayer film is formed on both surfaces of the light-transmitting substrate, the film stress of the dielectric multilayer film formed on both surfaces cancels each other, so dicing is performed after the resin focusing lens is formed. May be. However, when a dielectric multilayer film is formed on the surface of the light transmissive substrate facing the solid-state imaging device, the following problems occur.

  The dielectric multilayer film has countless cracks that do not affect the function of reflecting infrared rays. Since the dielectric multilayer film is easily affected by temperature changes, cracks may expand with temperature changes caused by the manufacturing process and driving of the device after mounting. When cracks are enlarged and a plurality of cracks are connected, micro-peeling of the film occurs to such an extent that it hardly affects the function of reflecting infrared rays. If a small piece that has caused micro-peeling of the dielectric multilayer film adheres to the effective pixel region, a stain is formed on the image.

  That is, when the dielectric multilayer film is formed on both surfaces of the light transmissive substrate, the yield rate and long-term reliability of the solid-state imaging device are lowered. Furthermore, if dielectric multilayer films are formed on both surfaces of the light-transmitting substrate, it is a matter of course that miniaturization and thinning of the solid-state imaging device are hindered.

  Here, when the technique described in Patent Document 1 or Patent Document 2 is applied to the solid-state imaging device 141 of Patent Document 3 shown in FIG. 3, the complexity of the work and cost increase due to the production of the unit case, and the minute peeling of the dielectric multilayer film are reduced. At the same time, the solid-state imaging device can be reduced in size and thickness.

  The problems of Patent Document 1 and Patent Document 2 can be solved for the following reasons (1) to (3). (1) Since the light-transmitting substrate only needs to be slightly larger than the size of the effective pixel area, a space for avoiding contact between the bonding wire and another member is not required. (2) A lens is formed on the upper surface. The light-transmitting substrate and the solid-state imaging device are fixed through a very thin adhesive portion, so that the central axis of the incident light and the central axis of the lens are not greatly inclined, and (3) it is reduced in size. Further, since the light transmissive substrate is used, the lens is not deformed by the film stress of the dielectric multilayer film.

  However, when the dielectric multilayer filter 131 of Patent Document 2 is applied to the solid-state imaging device 141 of Patent Document 3, the following problems occur. Since the end of the dielectric multilayer filter has a flat side wall, light is reflected on the side wall. Light incident near the end of the dielectric multilayer filter is reflected on the side wall of the dielectric multilayer filter, and enters the effective pixel area as light unnecessary for image formation. As a result, the image quality of the formed image is degraded.

  Therefore, the present invention has been made in view of the above problems, and its purpose is to achieve downsizing and thinning using a simple and inexpensive method, and high reliability, environmental resistance and performance. It is providing the solid-state imaging device which has.

  In order to solve the above problems, a solid-state imaging device according to the present invention has a solid-state imaging device in which an effective pixel region is formed, a transparent substrate disposed to face the effective pixel region, and at least a side wall of the transparent substrate. A solid-state imaging device comprising: a coating resin that covers the optical substrate; and an optical element disposed on a light incident side surface of the transparent substrate, wherein the adhesion to the optical element is higher than that of the coating resin. Means is disposed between the coating resin and the optical element, and the peeling preventing means is in contact with the coating resin and the optical element.

  According to the above configuration, the anti-peeling means for preventing the optical element from being peeled is provided on the coating resin provided on the side wall of the transparent substrate disposed to face the effective pixel region on the solid-state image sensor. . The optical element is formed on a transparent substrate. The peeling preventing means is provided so as to be sandwiched between and in contact with the optical element and the coating resin. That is, the optical element formed so as to protrude from the transparent substrate comes into contact with the peeling preventing means, not the coating resin. When the peeling prevention means is not provided, the optical element protruding from the transparent substrate comes into contact with the coating resin. The peeling preventing means has a higher adhesive force to the optical element than the coating resin. Therefore, the optical element that is in contact with the peeling prevention means is less likely to peel than when it is in contact with the coating resin. When the optical element is peeled off, the optical element is deformed, causing a problem that desired optical characteristics cannot be obtained. Therefore, with the above-described configuration, it is possible to provide a highly reliable solid-state imaging device that can obtain desired optical characteristics.

  Furthermore, in the solid-state imaging device of the present invention, the transparent substrate preferably has a smaller planar dimension than the solid-state imaging element.

  According to the above configuration, since the transparent substrate for protecting the solid-state imaging device has a smaller planar dimension than the solid-state imaging device, the solid-state imaging device is accordingly reduced. Therefore, a miniaturized solid-state imaging device can be provided. Furthermore, wiring for outputting an electrical signal converted in the solid-state imaging device to the outside can be arranged outside the space sandwiched between the transparent substrate and the solid-state imaging device. Therefore, the transparent substrate and the solid-state image sensor can be arranged closer. Accordingly, the solid-state imaging device can be reduced in height (thinned).

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that a part of the transparent substrate including the light incident side surface protrudes from the coating resin.

  According to the above configuration, when forming the coating resin, it is possible to prevent the fluidized coating resin before curing from flowing onto the transparent substrate and covering part or all of the effective pixel region on the transparent substrate. it can. Thereby, the yield of a solid-state imaging device increases, and an inexpensive solid-state imaging device can be provided.

  Further, when the peeling prevention means is disposed on the coating resin, the upper surface of the peeling prevention means and the upper surface of the transparent substrate can be made the same height. Thereby, when forming an optical element, the leakage of optical element material can also be prevented.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the height of the portion of the transparent substrate protruding from the coating resin is 10 μm to 100 μm.

  According to the above configuration, since the light incident side surface (upper surface) of the transparent substrate is exposed 10 μm or more than the upper surface of the coating resin, the fluidized coating resin before curing is formed when the coating resin is cured. Can be further prevented from flowing over the transparent substrate and covering part or all of the effective pixel region on the transparent substrate. Thereby, the yield of a solid-state imaging device increases, and an inexpensive solid-state imaging device can be provided. In addition, by setting the exposed portion of the transparent substrate to 100 μm or less, it is possible to suppress a decrease in the adhesion portion between the transparent substrate and the coating resin, and to prevent insufficient adhesion between the transparent substrate and the coating resin. Thereby, it can suppress that a crack arises between a transparent substrate and coating resin by the stress from the outside.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the thickness of the peeling preventing means is the same as the height of the portion protruding from the coating resin.

  When an optical element is formed using a material that is a fluid, if there is a step around the transparent substrate, the optical element forming material leaks out due to capillary force. Due to this phenomenon, a forming material necessary for forming the optical element is not secured, and a problem arises in that a recess is formed in a part of the optical element, bubbles are generated, and a desired shape cannot be obtained.

  According to the said structure, the upper surface of a transparent substrate and the upper surface of a peeling prevention means become the same height. Thereby, when the optical element is formed on the transparent substrate, the step around the transparent substrate is eliminated. Therefore, leakage of the optical element forming material can be prevented when forming the optical element. Therefore, an optical element having a desired optical shape can be manufactured.

  Note that the same height here means that, in addition to the case where the height is completely the same, the same height can be obtained as long as the same effect as the case where the height is completely the same can be achieved. To include.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the thickness of the peeling preventing means is larger than the height of the portion protruding from the coating resin.

  According to the said structure, the thickness of a peeling prevention means is larger than the level | step difference of coating resin upper surface and a transparent substrate upper surface. By providing such a peeling prevention means, the leakage of the fluid material at the time of forming the optical element described above can be eliminated, and the outermost periphery of the mold can be applied to the peeling prevention means. Therefore, the tilt (tilt) of the optical element generated by the contact between the transparent substrate and the inner peripheral mold of the mold is reduced, and a high-performance optical element can be manufactured.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that a gap is formed between the peeling prevention means and the transparent substrate.

  According to the said structure, the clearance gap is formed between the peeling prevention means and the transparent substrate. For this reason, when the optical element is formed, a part of the effective pixel area is hidden by accidentally shifting the peeling prevention unit, or the adhesive that fixes the peeling prevention unit to the coating resin protrudes onto the transparent substrate. It is possible to prevent part of the region from being hidden. Therefore, it is possible to prevent manufacturing problems such as image defects. In addition, the allowable range of manufacturing errors related to the dimensions of the peeling prevention means is widened. Thereby, the yield of a solid-state imaging device increases, and an inexpensive solid-state imaging device can be provided.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that a part of the optical element is further in contact with the coating resin.

  According to the said structure, the material which forms an optical element is filled also in the space between a transparent substrate and peeling prevention means. For this reason, light that is internally reflected on the transparent substrate and is incident on the effective pixel region can escape to the outside of the transparent substrate. Internal reflection light incident on the effective pixel region can be reduced, and stray light can be reduced. Thereby, it is possible to prevent the image quality from deteriorating.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the planar dimension of the peeling preventing means coincides with the planar dimension of the own apparatus.

  According to the above configuration, the peeling preventing means is formed so as to cover the sagging such as cracks and chips that may occur in the coating resin on the outer peripheral portion of the solid-state imaging device separated by dicing. Therefore, the upper surface of the coating resin can be completely covered, and even if the imaging lens is mounted on the solid-state imaging device of the present invention, tilting of the optical element caused by sagging or the like can be prevented. Thereby, the yield of a solid-state imaging device increases, and an inexpensive solid-state imaging device can be provided.

  Note that “matching” here includes not only the case of being completely matched but also the case of being substantially matched if an effect equivalent to the effect of being completely matched can be achieved.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the surface reflectance of the peeling preventing means is 4% or less.

  According to the said structure, since the surface reflectance of a peeling prevention means is 4% or less, it can reduce that the stray light which escaped outside the transparent substrate reflects in a peeling prevention means. Thereby, the light reflected by the peeling preventing means and incident again on the effective pixel region can be reduced, and stray light can be reduced. Thereby, it is possible to prevent the image quality from deteriorating.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the optical element has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C.

  The solid-state imaging device is mounted on a substrate by melting and solidifying the solder by a reflow process to connect the external connection terminal and wiring on a substrate such as a flexible printed circuit (FPC).

  According to the above configuration, since the optical element has a visible light transmittance of 80% or more under the temperature condition of −60 ° C. to 270 ° C., the properties of the optical element are deteriorated while the optical element is mounted. The reflow process can be performed without causing it to occur. Therefore, a low-cost solid-state imaging device can be provided.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that an infrared cut film for preventing infrared transmission is provided on the surface of the transparent substrate on the optical element side.

  According to the said structure, infrared rays are cut before injecting into a transparent substrate. Therefore, the solid-state imaging device can avoid the incidence of infrared rays that are unnecessary for image formation into the effective pixel region. Therefore, it is possible to prevent deterioration in image quality such as a decrease in resolution and image unevenness caused by the solid-state imaging device converting infrared rays including near infrared rays into electrical signals.

  The infrared cut film is provided on the optical element side of the transparent substrate. Therefore, even if the infrared cut film is peeled off, it does not adhere to the effective pixel region. Therefore, even if the infrared cut film is peeled off, it is possible to prevent a deterioration in image quality caused by adhesion to the effective pixel region.

  Furthermore, in the solid-state imaging device of the present invention, it is preferable that the surface of the infrared cut film on the optical element side is subjected to silane coupling treatment.

  When the silane coupling treatment is performed, the adhesive force between the inorganic material member and the organic material member can be improved. Therefore, even when one of the infrared cut film and the optical element is an inorganic material and the other is an organic material, according to the above configuration, the adhesive force between the infrared cut film and the optical element can be improved. Thereby, a solid-state imaging device with high environmental resistance can be provided.

  Moreover, the imaging device of this invention is provided with the said solid-state imaging device.

  By having the above-described configuration, it is possible to provide a photographing apparatus that achieves downsizing and thinning using a simple and inexpensive method and that has high reliability, environmental resistance, and performance.

  In order to solve the above-described problem, the method for manufacturing a solid-state imaging device of the present invention arranges a transparent substrate so as to face the effective pixel region of the solid-state imaging device, covers at least the side wall of the transparent substrate with a coating resin, A solid-state imaging device manufacturing method for forming an optical element from an optical element forming resin using a mold on a transparent substrate, the closing means for closing a space formed between the mold and the coating resin, When forming the optical element, the optical element is disposed on the coating resin.

  Here, the closing means means the solid-state imaging device and the mold before forming the optical element when the mold for forming the optical element is set on the solid-state imaging apparatus on which the optical element is not formed. The space formed in is closed with a hole that leads to the outside so that the filled fluidized optical element forming resin before curing does not leak to the outside, or external air does not touch this filled resin. Means a means for sealing the space.

  According to the above configuration, the transparent substrate is disposed so as to face the effective pixel region of the solid-state imaging device, at least the side wall of the transparent substrate is covered with the coating resin, and the blocking means is disposed on the coating resin. In addition, a solid-state imaging device in which an optical element is formed on a transparent substrate can be formed. When the optical element is formed, the resin that forms the optical element is placed between the mold and the coating resin by the closing means. It is possible to prevent leakage from the gap. Thereby, it can suppress that a hollow and a bubble generate | occur | produce in a part of optical element, and can provide the solid-state imaging device which has the shape of a desired optical element.

  Further, when the optical element is formed, the space filled with the optical element forming resin for forming the optical element can be sealed by the closing means. As a result, the optical element forming resin is not exposed to the air (oxygen atmosphere) when forming the optical element. Accordingly, since a resin that inhibits curing by oxygen can be selected, it is possible to design with flexibility. As a result, a high-performance solid-state imaging device can be manufactured.

  Furthermore, in the method for producing a solid-state imaging device of the present invention, when forming the optical element, the mold is filled with an energy curable resin having fluidity, and after filling the energy curable resin and after disposing the closing means, The energy curable resin is preferably cured, and the energy curable resin is preferably a light energy curable resin or a thermal energy curable resin.

  According to the said structure, an optical element can be formed using the type | mold with which energy curable resin was filled. Therefore, by changing the shape of the mold, for example, the convex surface of an optical element having a desired shape, such as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape can be easily formed. Can be formed.

  Furthermore, in the method for manufacturing a solid-state imaging device according to the present invention, the mold and the energy curable resin are transparent, and the energy curable resin is cured while confirming a position where the optical element is to be formed through the mold. It is preferable to do.

  According to the above configuration, since the energy curable resin and the mold filled in the mold are transparent, the center of the effective pixel area of the solid-state imaging device can be visually recognized through the mold filled with the energy curable resin. . That is, the optical element can be formed at a desired position on the transparent substrate while checking the position using a camera or the like. For this reason, the center of the optical element can be accurately arranged right above the center of the effective pixel region. Therefore, the production yield of the solid-state imaging device can be improved.

  As described above, the solid-state imaging device according to the present invention is bonded to the optical element on the transparent substrate disposed so as to face the effective pixel region on the solid-state imaging element and the coating resin covering at least the side wall of the transparent substrate. A peeling preventing means having a higher force than the coating resin is provided. The portion of the optical element formed on the transparent substrate that protrudes from the transparent substrate is formed on the peeling prevention means.

  Thereby, peeling of the optical element can be prevented, and a highly reliable solid-state imaging device that prevents deformation of the optical element can be provided.

  Further, in the method for manufacturing a solid-state imaging device according to the present invention, a transparent substrate is disposed so as to face the effective pixel region of the solid-state imaging device, at least the side wall of the transparent substrate is covered with a coating resin, and the optical element is disposed on the transparent substrate. It is a manufacturing method, and further includes a process of disposing a blocking means for preventing leakage of the optical element forming resin for forming the optical element on the coating resin. Thereby, a highly reliable solid-state imaging device including an optical element having a desired shape can be provided.

[Embodiment 1]
An embodiment of the solid-state imaging device according to the present invention will be described below with reference to FIGS.

  First, the configuration of the solid-state imaging device according to the present embodiment will be described with reference to FIG.

  FIG. 1A is a plan view showing the configuration of the solid-state imaging device 1A. FIG. 1B is a cross-sectional view showing a state in which the solid-state imaging device 1A is cut along the E-E ′ cutting line of FIG. FIG. 1D is a cross-sectional view showing a state where the solid-state imaging device 1A is cut along the F-F ′ cutting line of FIG.

  As shown in FIGS. 1B and 1D, the solid-state imaging device 1 </ b> A is disposed on the sensor substrate 2, the external connection terminal 10 disposed below the sensor substrate 2, and the sensor substrate 2. Sensor chip 3 (solid-state imaging device), transparent substrate 5 disposed to face the effective pixel region 3a of the sensor chip 3, a holding unit 7 for holding the sensor chip 3 and the transparent substrate 5 in parallel, and a sealing resin 6 (Covering resin), a spacer 11A (peeling prevention means, closing means), and a resin lens 4 (optical element) disposed on the transparent substrate 5 are provided.

  The effective pixel region 3a is formed in the approximate center of the sensor chip 3, and the holding portion 7 is disposed outside the effective pixel region 3a so as to surround the effective pixel region 3a.

  In the effective pixel region 3a, one set of opposite sides has a length W1, and the other set of sides has a length W2, so that W1 <W2. In the present embodiment, the case where the effective pixel region 3a is rectangular has been described. However, the shape of the effective pixel region 3a is not limited to this, and may be changed as appropriate. .

  The transparent substrate 5 is disposed to face the effective pixel region 3 a and is held in parallel with the sensor chip 3 by the holding unit 7. Since the transparent substrate 5 has a substantially parallel planar shape and the holding portion 7 has a very thin configuration having a uniform thickness, the upper surface of the transparent substrate 5 (the upper surface shown in FIG. 1B) is an effective pixel. It is substantially parallel to the region 3a. However, there may be some sagging due to cracks and chipping at the ends that may occur when the transparent substrate 5 is formed by dicing from a large substrate.

  The upper surface size of the transparent substrate 5 is obtained by adding the upper surface size of the holding unit 7 to the size (W1 × W2) of the effective pixel region 3a. Therefore, the upper surface size of the transparent substrate 5 is substantially the same as the size of the effective pixel region 3a, but is larger by the holding portion 7 than the size of the effective pixel region 3a. Further, the upper surface size of the transparent substrate 5 is preferably smaller than the planar size of the sensor substrate 2 so that the transparent substrate 5 does not come into contact with the bonding wires 9. In order to reduce the size of the solid-state imaging device 1A, it is preferable that the size is smaller than the planar size of the sensor chip 3.

  The air layer 8 formed between the effective pixel region 3 a and the transparent substrate 5 is sealed by the holding unit 7. By sealing the air layer 8 formed between the effective pixel region 3a and the transparent substrate 5, intrusion of moisture, dust, dust, etc., and other members and parts of the manufacturing apparatus enter the effective pixel region 3a in the manufacturing process. The effective pixel region 3a is prevented from being damaged due to contact with each other, and the effective pixel region 3a is protected. The holding part 7 is formed by thermosetting a thermosetting resin sandwiched between the sensor chip 3 and the transparent substrate 5. Thereby, the air layer 8 is completely sealed.

  The sensor chip 3 and the sensor substrate 2 are electrically connected by a bonding wire 9. That is, the sensor chip 3 can output an electric signal to the outside via the bonding wire 9, the sensor substrate 2, and the external connection terminal 10. The bonding wire 9 is also sealed with the sealing resin 6. Therefore, the sealing resin 6 prevents contact between the bonding wires 9 and disconnection of the bonding wires 9.

  Here, the bonding wire 9 is connected to the outside of the region where the holding portion 7 of the sensor chip 3 is disposed. For this reason, if the transparent substrate 5 has a plane dimension (size) that can cover the effective pixel region 3a, the entire effective pixel region 3a can be protected.

  Furthermore, it is not necessary to arrange the bonding wire 9 inside the air layer 8. For this reason, the height of the holding unit 7, that is, the distance between the sensor chip 3 and the transparent substrate 5 only needs to be such that the transparent substrate 5 does not contact the effective pixel region 3a. Therefore, the distance between the sensor chip 3 and the transparent substrate 5 can be reduced, and the solid-state imaging device 1A can be reduced in size and thickness (reduced in height).

  The side walls of the transparent substrate 5, the holding part 7 and the sensor chip 3 are covered with the sealing resin 6, and the side walls and part of the upper surface of the sensor substrate 2 are also covered with the sealing resin 6. As will be described later, by using an opaque resin as the sealing resin 6, only the light passing through the lens 4 can be made incident on the effective pixel region 3a. The optical sealing resin 6 is formed so as to flow around the sensor substrate 2, the sensor chip 3, the transparent substrate 5, the holding unit 7, and the bonding wire 9 after assembling. At this time, the upper surface of the sealing resin 6 is formed below the upper surface of the transparent substrate 5 in order to prevent the sealing resin 6 from entering the upper surface of the transparent substrate 5. That is, when the sensor chip 3 and the transparent substrate 5 are sealed with resin, if the sealing resin 6 having an excessive amount of fluidity is filled, the sealing resin 6 easily enters the upper surface of the transparent substrate 5. Therefore, in resin sealing, the sealing resin 6 having fluidity is filled in a smaller amount than that required for sealing the sensor chip 3 and the transparent substrate 5. As a result, a part including the light incident side surface of the transparent substrate 5 protrudes from the sealing resin 6, and a part of the side wall of the transparent substrate 5 is exposed from the sealing resin 6.

  The gap 20A, which is the height from the upper surface of the sealing resin 6 to the upper surface of the transparent substrate 5, that is, the height of the side wall of the transparent substrate 5 exposed from the sealing resin 6 is preferably 10 μm to 100 μm. . When the exposed area is smaller than 10 μm, the sealing resin fluidized between the heat-resistant resin sheet and the transparent substrate 5 oozes by capillary action and covers the upper surface of the transparent substrate 5. Further, since the minimum thickness that the transparent substrate 5 can take is about 300 μm, when the exposed region is larger than 100 μm, only about 2/3 of the side surface of the transparent substrate can be sealed. In this case, insufficient adhesion occurs due to a decrease in the adhesion area between the side wall of the transparent substrate 5 and the sealing resin 6. Therefore, there is a possibility that a crack may occur between the side wall of the transparent substrate 5 and the sealing resin 6 due to external stress.

  In the solid-state imaging device 1 </ b> A, a spacer 11 </ b> A is disposed on the sealing resin 6 so as to surround the exposed side wall of the transparent substrate 5. The thickness of the spacer 11A is almost the same as the gap 20A. Therefore, the upper surface of the spacer 11A and the upper surface of the transparent substrate 5 are almost the same height. The outer planar size of the spacer 11A is equal to or larger than the outer shape of the lens 4 in a direction other than the diagonal direction of the effective pixel region 3a. Further, there is a hole having a size equal to or larger than the planar size of the transparent substrate 5. The outer shape shown in FIG. 1A is a quadrangle, but it does not have to be a quadrangle as long as it has a planar size larger than that of the lens 4 and within the outer plane size of the solid-state imaging device 1A. The shape may be changed as appropriate, such as an ellipse.

  If the solid-state imaging device 1 </ b> A does not include the spacer 11 </ b> A as a configuration, a part of the side wall of the transparent substrate 5 remains exposed from the sealing resin 6. In this case, stray light of light incident on the effective pixel region 3a is generated along with reflection of light at a part of the exposed side wall. By fixing the spacer 11A having a thickness corresponding to the exposed side wall around the transparent substrate 5 by adhering to the transparent substrate 5, the change in the refractive index of the adhered portion can be reduced. Thereby, reflection at the side wall is reduced, and light reaches the spacer 11A. By adopting a configuration in which the reflectance of the spacer 11A is 4% or less, the reflection of the spacer 11A can be reduced. A method for forming a spacer having a reflectance of 4% or less will be described later.

  Further, due to the processing accuracy of the spacer 11A and the processing accuracy of the transparent substrate 5, there may be a portion where a slight gap is generated between the exposed side wall of the transparent substrate 5 and the spacer 11A and does not come into contact therewith. In this case, the adhesive used when fixing the spacer 11 </ b> A may be configured to be filled in the gap between the transparent substrate 5 and the spacer 11 </ b> A. By filling the adhesive, there is no reflection on the side wall, and light reaches the spacer 11A. In this case, the adhesive for fixing the spacer 11A may be formed of a light-impermeable material.

  A lens 4 is formed on the transparent substrate 5. The lens 4 is configured to correct the angle of light incident on the effective pixel region 3a so as to approach a right angle. As described above, the upper surface size of the transparent substrate 5 and the size of the effective pixel region 3a are substantially the same. Therefore, when the lens 4 is formed so that the effective diameter area of the lens 4 is within the effective pixel area, a part or all of the outer peripheral portion of the lens 4 protrudes from the transparent substrate 5. The region of the lens 4 that protrudes from the transparent substrate 5 is in contact with the spacer 11A. In the present embodiment, a part of the outer peripheral portion of the lens 4 protrudes from the transparent substrate 5, and the lens 4 is in contact only with the transparent substrate 5 and the spacer 11A.

  When the spacer 11 </ b> A is not included as a configuration, the region of the lens 4 that protrudes from the transparent substrate 5 comes into contact with the sealing resin 6. In such a case, the following problems occur. (1) Since the lens 4 is formed after the sealing resin 6 is formed by compression using a mold, the sealing resin 6 is not chemically active when the lens 4 is formed. For this reason, the adhesive force between the lens 4 and the sealing resin 6 is reduced, and the end of the lens 4 is easily peeled off. (2) A mold release agent adheres to the surface of the sealing resin 6 so that the sealing resin 6 and a mold for forming the sealing resin 6 are easily peeled off after the molding of the sealing resin 6 is completed. . Therefore, the lens 4 is easily peeled off. (3) Since the lens 4 and the sealing resin 6 are made of different resins, they have different coefficients of thermal expansion. Therefore, the end of the lens 4 is easily peeled off from the sealing resin 6 due to the heating / cooling process in the mounting process of the solid-state imaging device 1A and the change in environmental temperature used for the product incorporating the solid-state imaging device 1A. When the end portion of the lens 4 is peeled off from the sealing resin 6, the lens 4 is deformed and desired optical characteristics cannot be obtained.

  By providing the spacer 11A that covers the sealing resin 6 on the sealing resin 6 around the transparent substrate 5, the region of the lens 4 that protrudes from the transparent substrate 5 comes into contact with the spacer 11A.

  In order to prevent separation between the spacer 11 </ b> A and the lens 4, the adhesive force to the lens 4 is higher than that of the sealing resin 6. As a material of the spacer 11A, a metal having a high formability is preferable. For example, the spacer 11A having a desired shape can be formed by etching or precision stamping an inexpensive aluminum-based material or copper- and iron-based material. Moreover, it is possible to use resin which can be processed into a film having a thickness of 10 μm to 100 μm, such as epoxy resin, modified acrylate resin, and nylon.

  Further, as will be described later, the adhesion with the lens 4 may be improved by applying a silane coupling treatment to the spacer 11A. As a result, the above problem can be avoided.

  Next, the end 5A of the lens 4 shown in FIG. 1B will be described with reference to FIG. The lens 4 is designed with the distance between diagonals of the effective pixel region 3a as the optical effective diameter. That is, the lens 4 is designed to have a circular outer shape with the center of the effective pixel region 3a as the optical center and the diameter as the diagonal distance of the effective pixel region 3a. Since the lens 4 has a convex lens shape, the ridgeline of the lens 4 intersects the transparent substrate 5 in the vicinity of the outside of the effective diameter in the diagonal direction of the transparent substrate 5 indicated by E-E ′. Therefore, in the four corners 5A of the transparent substrate 5, the outer periphery of the lens 4 is not in contact with the spacer 11A.

  Next, the end portion 4A of the lens 4 shown in FIG. 1D will be described with reference to FIG. As described above, the lens 4 is designed so that the diagonal distance of the effective pixel region 3a is the optical effective diameter. Therefore, the planar shape of the lens 4 is larger than the planar shape of the transparent substrate 5. Accordingly, in the direction other than the diagonal direction of the effective pixel region 3a, the end of the lens 4 is formed on the spacer 11A. That is, when the spacer 11A is not included as a configuration, the lens 4 is formed on the sealing resin 6 at the end 4A of the lens 4, and thus the above-described problem occurs.

  Below, each structure of 1 A of solid-state imaging devices is demonstrated in detail.

  In order to prevent the light emitted from the side surface of the transparent substrate 5 from being reflected by the spacer 11A and entering the effective pixel region 3a, the surface reflectance of the spacer 11A is preferably 4% or less. In the case of using the above-described metal as the spacer 11A, surface reflection is performed by appropriately performing surface treatment according to the metal to be used, such as applying a black paint on the surface, or performing black dyeing treatment and alumite treatment. The rate can be 4% or less. Further, when a resin is used as the spacer 11A, it is possible to impart opaqueness by dispersing a black dye or pigment in the interior, and to reduce the surface reflectance to 4% or less.

  Examples of the adhesive that fixes the spacer 11A to the sealing resin 6 include a modified acrylate resin, a methacrylate composite resin, a polysiloxane resin, a silicon resin, a silicon rubber, a silica-containing composite epoxy resin, and a transparent polyimide. it can. These adhesives are transparent, but opaqueness can be easily imparted by dispersing a black dye or pigment therein.

Furthermore, in order to reinforce the adhesive force between the adhesive and the sealing resin 6, after imparting a hydroxyl group, a carbonyl group, or a carboxyl group to the surface of the sealing resin 6, various conventionally known silane coupling agents are added. It is preferable to apply and perform a silane coupling treatment. Examples of preferable combinations of the silane coupling agent and the adhesive include the following two types:
(1) A combination in which the adhesive is a modified acrylate resin or a methacrylate composite resin, and the silane coupling agent is an amino or methacryloxy silane coupling agent; and (2) the adhesive is a polysiloxane resin, A combination of silicon resin, silicon rubber, silica-containing composite type epoxy resin or transparent polyimide, and the silane coupling agent being an amino-based or epoxy-based silane coupling agent can be given.

As a method for imparting a functional group such as a hydroxyl group, a carbonyl group, and a carboxyl group to the surface of the sealing resin 6, corona discharge, O ₂ plasma treatment, and CH ₄ plasma treatment in the atmosphere are performed on the surface of the sealing resin 6. Can be mentioned.

  Further, as another method for improving the adhesive force, a method of roughening the surface of the sealing resin 6 by Ar plasma treatment on the surface of the sealing resin 6 can be mentioned. By roughening the surface of the sealing resin 6 to create minute irregularities, the contact area between the adhesive and the sealing resin 6 is increased. Further, the adhesive bites into the minute irregularities on the surface of the sealing resin 6, and an anchor effect is also produced.

Further, as a method for improving the adhesive force between the adhesive and the spacer 11A, when the spacer 11A is a metal, a conventionally known silane coupling process may be performed on the spacer 11A. When the spacer 11A is a resin, the surface of the spacer 11A is roughened by a method of performing a silane coupling process after performing the above-described corona discharge in the atmosphere, O ₂ plasma treatment and CH ₄ plasma treatment, and Ar plasma treatment. Can be mentioned.

  In any case, when the spacer 11A is fixed to the sealing resin 6, the above-described method may be appropriately selected in consideration of the material of the spacer 11A, the material of the adhesive to be used, and the material of the sealing resin 6.

  Also, on the portion of the spacer 11A that is in contact with the lens 4. A silane coupling agent may be applied and a silane coupling treatment may be performed. Thereby, the adhesive force between the spacer 11 </ b> A and the lens 4 can be strengthened, and the occurrence of peeling that tends to occur from the periphery of the lens 4 can be suppressed. Any silane coupling agent may be used as long as it can improve the chemical adhesive force between the spacer 11A and the lens 4. Among the conventionally known silane coupling agents, the properties of the materials constituting the spacer 11A and the lens 4 can be used. It may be appropriately selected according to the above.

  The lens 4 is configured to correct the angle of light incident on the effective pixel region 3a so as to approach a right angle. The lens 4 has a convex lens shape. Therefore, the light incident on the lens 4 is refracted and corrected so that the incident angle to the effective pixel region 3a approaches a right angle. The farther the position where the light is incident is from the center of the effective pixel region 3a, the farther the angle of the light is from the vertical. Since the effective pixel region 3a recognizes the incident light and converts it into an electric signal, the efficiency becomes lower as the angle of the incident light goes away from the right angle. For this reason, in order to increase the incident efficiency of light at the outer periphery of the effective pixel region 3a, it is preferable to cover the entire surface of the effective pixel region 3a.

  In the present embodiment, the lens 4 uses a photocurable resin that is cured by irradiation with ultraviolet rays, but is not limited thereto. As resin which comprises the lens 4, the photocurable resin hardened | cured by irradiation of the light except an ultraviolet-ray may be sufficient, for example, and the thermosetting resin hardened | cured by provision of a thermal energy may be sufficient. The resin constituting the lens according to the present invention is an energy curable resin that is cured by application of energy, and can be appropriately selected from conventionally known resins as long as it is a resin that transmits light after being cured. In the present specification, the photocurable resin and the thermosetting resin may be collectively referred to as “energy curable resin” in some cases.

  The lens 4 is formed by filling a mold with an energy curable resin and curing the mold in contact with the transparent substrate 5 and the spacer 11A. For this reason, it is easy to form the lens 4 in a desired shape. The shape of the convex surface of the lens 4 may be a shape that corrects light incident on the lens 4 so as to be emitted perpendicularly to the effective pixel region 3a, and may be spherical or aspherical. For example, the lens 4 may be formed as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape.

  The manufacturing process of the solid-state imaging device 1A includes heating and cooling processing. When the resin constituting the lens 4 is denatured by the heating / cooling process, the solid-state imaging device 1A cannot be appropriately corrected. Therefore, the lens 4 preferably has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C. With such a configuration, even when the lens 4 is exposed to the above temperature condition, the light incident on the solid-state imaging device 1A is corrected so as to enter the solid-state imaging device 1A substantially perpendicularly. The action of the lens 4 can be maintained.

  Here, when the lens 4 is not formed, the external connection terminal and the wiring on the substrate such as the FPC are connected by melting and solidifying the solder by reflow processing, and the solid-state imaging device is mounted on the substrate. . After the reflow process, an imaging element (camera module) is manufactured by mounting an optical lens on the solid-state imaging device. For example, when the solid-state imaging device is mounted on a flexible printed circuit board (FPC) or the like, the lead-free solder reflow mounting process is performed with a temperature profile as shown in FIG.

  Examples of the resin for forming the lens 4 satisfying the above conditions include a silicone resin having at least one of an alkyl group, a phenyl group, a methyl group, and a methacryl group, and an organic-inorganic hybrid in which a carbon skeleton and a silicone skeleton are hybridized. An energy curable resin such as silicon resin can be used.

  By forming the lens 4 using the exemplified material, the solid-state imaging device 1A can be mounted on the substrate by reflow processing even when the lens 4 is formed on the transparent substrate 5.

  The transparent substrate 5 may be a transparent member having a plane parallel plate shape, and is not limited to glass, and may be made of a resin or the like.

  In order to improve the adhesive force between the transparent substrate 5 and the lens 4, it is preferable that a silane coupling agent is applied to the surface of the transparent substrate 5 in contact with the lens 4. The silane coupling agent to be applied to the transparent substrate 5 may be any one that can improve the chemical adhesive force with the lens 4, and the properties of the resin constituting the lens 4 from the conventionally known silane coupling agents. It may be appropriately selected according to the above. As the silane coupling agent that enhances the adhesive force between the transparent substrate 5 and the lens 4, epoxy-based and amino-based silane coupling agents are preferable.

  Application of the silane coupling agent to the transparent substrate 5 can be performed as follows. First, the silane coupling agent is diluted to about 1% with an organic solvent such as isopropyl alcohol. The upper surface of the transparent substrate 5 is immersed (dip) in the diluted silane coupling agent. By drying the transparent substrate 5 dipped with the silane coupling agent, the silane coupling agent can be applied to the transparent substrate 5. In addition to the method described here, a silane coupling agent can be applied to the transparent substrate 5 using a conventionally known method.

  It is preferable that an infrared cut filter (infrared cut film) for preventing infrared transmission is formed between the transparent substrate 5 and the lens 4. When the solid-state imaging device 1 </ b> A is built in a photographing device such as a camera or a video recorder camera, it is preferable to avoid the incidence of infrared rays that are unnecessary for image formation on the sensor chip 3. Thereby, it is possible to prevent deterioration in image quality such as a decrease in resolution and image unevenness caused by the solid-state imaging device 1A converting infrared rays including near infrared rays into electrical signals. In order to avoid the incidence of infrared rays on the sensor chip 3, it is necessary to reflect or absorb infrared rays or both. In this embodiment, a dielectric multilayer film for reflecting infrared rays is formed between the transparent substrate 5 and the lens 4 as an infrared cut filter.

  The infrared reflective dielectric multilayer film is a multilayer film in which high refractive index layers and low refractive index layers are alternately formed by sputtering or vapor deposition.

  In the dielectric multilayer film, the range of the wavelength of the reflected light changes according to the incident angle of the light. For this reason, when the dielectric multilayer film is formed on the curved surface of the lens 4 or the like, the wavelength of the reflected light is different between the vicinity of the center and the vicinity of the end portion. For this reason, the dielectric multilayer film is preferably formed on the flat transparent substrate 5.

  Further, the dielectric multilayer film is formed on the surface of the transparent substrate 5 on which the lens 4 is disposed. When the dielectric multilayer film is formed on the surface of the transparent substrate 5 facing the effective pixel region 3a, when the dielectric multilayer film is peeled off, the peeled dielectric multilayer film adheres to the effective pixel region 3a, and the image quality is improved. It will cause a decline.

  When the dielectric multilayer film is formed only on the transparent substrate 5, the transparent substrate 5 is warped due to the film stress of the dielectric multilayer film. However, after the dielectric multilayer film is formed on the transparent substrate 5 having a large area, the transparent substrate 5 is divided into small pieces by dicing, so that the film stress can be released (decreased). For this reason, the warp of the transparent substrate 5 due to the formation of the dielectric multilayer film does not deteriorate the quality of the image formed by the solid-state imaging device 1A.

  In addition, it is preferable that the surface of the dielectric multilayer film on the side where the lens 4 is disposed is subjected to silane coupling treatment. By using the silane coupling agent, the adhesive force between the dielectric multilayer film that is an inorganic material and the lens 4 that is an organic material can be improved. Any silane coupling agent may be used as long as it can improve the chemical adhesive force between the dielectric multilayer film and the lens 4, and the dielectric multilayer film and the lens 4 may be selected from conventionally known silane coupling agents. What is necessary is just to select suitably according to the property of the material to comprise.

  The material constituting the sealing resin 6 may be selected from conventionally known various resins. For example, a mixture containing fused silica as a main component (70% to 80%) and containing an epoxy resin or the like can be used. It is. The sealing resin 6 is preferably made of an opaque material so that light does not enter the effective pixel region 3a from members other than the transparent substrate 5.

  As a method for forming the sealing resin 6, various conventionally known methods may be employed. For example, as a method for forming the sealing resin 6, the following method is possible. First, after assembling the sensor substrate 2, the sensor chip 3, the transparent substrate 5, the holding unit 7, and the bonding wire 9, the transparent substrate 5 is covered with a heat resistant resin sheet, and the transparent substrate 5 is placed over the heat resistant resin sheet using a mold. Pressurize. In this state, the fluidized sealing resin is filled in the space around the transparent substrate 5 and the like. After filling, the sealing resin is cured by heating to form the sealing resin 6.

  A microlens is preferably formed on the effective pixel region 3 a of the sensor chip 3. When a microlens is formed, the angle of light emitted from the lens 4 (the emission angle is corrected) and incident on the effective pixel region 3a can be further corrected by the microlens. Therefore, the light incident on the effective pixel region 3a of the solid-state imaging device 1A can be corrected to a more optimal state.

  When the solid-state imaging device 1A is applied to an imaging device, the design (shape and arrangement) of the optical system (lens 4, microlens, and imaging lens) of the entire imaging device is also taken into account in consideration of the microlens formation position. ) Is preferable.

  The holding part 7 should just be the material which can hold | maintain the sensor chip 3 and the transparent substrate 5 in parallel, for example, can be selected from conventionally well-known various materials, such as a member which has adhesiveness. Note that the holding unit 7 is preferably made of an opaque material so that light from a material other than the transparent substrate 5 does not enter the effective pixel region 3a.

  The sensor substrate 2 only needs to have a flat plate structure having insulating properties. The entire sensor substrate 2 may be made of an insulating material, or the surface of the sensor substrate 2 may have insulating properties. . The material for constituting the sensor substrate 2 can be selected from conventionally known materials such as ceramic and resin. Various conventionally known methods can be adopted as a method for imparting insulation to the surface of the sensor substrate 2.

[Embodiment 2]
A method for manufacturing the solid-state imaging device 1A according to the embodiment of the present invention will be described below with reference to FIG.

  FIG. 3A and FIG. 3B are cross-sectional views illustrating each step in the method for manufacturing the solid-state imaging device 1A.

  As shown in FIGS. 3A and 3B, the process of manufacturing the solid-state imaging device 1A is performed in the order of S31 to S34 and S35 to S39.

  The transparent substrate 5 vacuum chucked using a rod 27 ′ of a mounter (not shown) is applied to the holding unit 7 of the incomplete solid-state imaging device 12 where the lens 4, the transparent substrate 5 and the sealing resin 6 are not formed. Then, mounting is performed (S31).

  The incomplete solid-state imaging device 12 mounted with the transparent substrate 5 is put in the chamber 28 of high temperature, and the transparent substrate 5 and the holding unit 7 are bonded. If the holding part 7 is formed of, for example, a thermosetting epoxy material, the holding part 7 is thermoset by being placed in the chamber 28 at a temperature of about 100 to 200 ° C. for 1 to 2 hours. Thereby, the interface between the transparent substrate 5 and the holding part 7 is bonded (S32). The material of the holding portion 7 is not limited to the above materials, and can be selected from conventionally known materials. The chamber 28 may also use a known technique such as an electric furnace.

  Next, a mold 29 for forming the sealing resin 6 is installed so that the inside of the mold 29 is placed on the transparent substrate 5, and a sealed space is formed by the unfinished solid-state imaging device 12 having the transparent substrate 5 and the mold 29. Form. Thereafter, the fluidized sealing resin 6 'is injected into the sealed space from the fluid resin injection hole 30 (S33).

  After the fluidized sealing resin 6 ′ is cured, the mold 29 is released to form an incomplete solid-state imaging device 1A ′ (hereinafter simply referred to as solid-state imaging device 1A ′) in which the lens 4 is not formed. (S34). When the sealing resin 6 is made of the above material, the fluidized sealing resin 6 ′ is cured and becomes the sealing resin 6 if the state is maintained at about 200 ° C. for 30 minutes to 1 hour.

  The solid-state imaging device 1 </ b> A ′ is vacuum-fixed (vacuum catching) using a rod 27 of a mounter (not shown) so that the transparent substrate 5 faces downward. The spacer 11A is fixed on the sealing resin 6 of the solid-state imaging device 1A 'that has been vacuum-caught (S35). When the spacer 11A is fixed, the spacer 11A may be fixed to the sealing resin 6 using an adhesive or an adhesive tape.

  A hollow formed to transfer the surface shape of the lens 4 of the transparent mold 26 is filled with a photocurable resin 41 (optical element forming resin) having fluidity (S36).

  Here, in the present embodiment, as a resin constituting the lens 4, a photocurable resin that is cured by irradiation with ultraviolet rays is described as an example. However, if it is an energy curable resin, the solid-state imaging device of the present invention. For example, a thermosetting resin can be used.

  In this embodiment, since the transparent mold 26 is used and the photocurable resin 41 is also transparent, the shape (planar shape and center position) of the effective pixel region 3a can be imaged using the camera 28. Therefore, the lens 4 can be formed at a desired position on the transparent substrate 5 while confirming the position using the camera 28.

  First, the shape of the effective pixel region 3 a is imaged using the camera 28 through the transparent mold 26, the photocurable resin 41, and the transparent substrate 5. An image processing device (not shown) performs image processing of the captured effective pixel region 3a. This image processing apparatus recognizes the center of the transparent mold 26 and the center of the effective pixel area subjected to image processing in the X-axis direction and the Y-axis direction (S37).

  Here, the transparent substrate 5 may be subjected to a silane coupling treatment prior to the step of S37.

  After the alignment, the transparent mold 26 filled with the photocurable resin 41 is brought into contact with the transparent substrate 5 and the spacer 11A and fixed in that state. After fixing the transparent mold 26, the UV lamp 22 is turned on and ultraviolet irradiation is performed (S38). Thereby, the photocurable resin 41 filled in the transparent mold 26 is cured.

  The transparent mold 26 is fixed in a state where the flat ends of the transparent mold 26 are in contact with the four corner portions 5 </ b> A of the transparent substrate 5. That is, the flat end portion of the mold 26 is fixed so as to be parallel to the effective pixel region 3a. Thereby, the lens 4 can be formed so that light transmitted through the center of the lens 4 is incident on the effective pixel region 3a at a right angle.

  In S38, the photocurable resin 41 is sealed with the transparent mold 26, the transparent substrate 5, and the spacer 11A. Thereby, the photocurable resin 41 is not exposed to the atmosphere. Therefore, it is possible to select a resin such as a silicone resin in which curing is inhibited by oxygen, and it is possible to design with flexibility. As a result, a high-performance solid-state imaging device can be manufactured. Moreover, since it is sealed, the photocurable resin 41 does not leak. Therefore, it is possible to prevent the lens 4 from generating depressions and bubbles.

  After the photocurable resin 41 is sufficiently cured and the lens 4 is formed, the transparent mold 26 is released from the solid-state imaging device 1A (S39).

  In addition, the process of S35 should just be performed before the process of S38, for example, may be performed simultaneously with the process of S36.

  By using the manufacturing method according to the present embodiment, it is possible to easily form a lens 4 having a complicated shape such as an aspheric lens having power, a lens having a Fresnel shape, and a diffraction lens having a fine relief shape. Can do. Furthermore, it is possible to form the lens 4 while aligning so that the center of the lens 4 is accurately opposed to the center of the effective pixel region 3a. Therefore, it is possible to provide a solid-state imaging device 1A that can form an image with small aberration and high resolution.

[Embodiment 3]
Another embodiment of the solid-state imaging device according to the present invention will be described below with reference to FIG. In this embodiment, in order to explain the difference from the first embodiment, for the sake of convenience of explanation, members having the same functions as the members described in the first embodiment are denoted by the same member numbers, The description is omitted.

  4A is a cross-sectional view of the solid-state imaging device 1B, and FIG. 4B is an enlarged cross-sectional view of the end 4B of the lens 4 in FIG. 4A.

  As shown in FIG. 4B, a gap 21 (gap) always exists between the spacer 11B and the transparent substrate 5. The lens 4 is formed in contact with the transparent substrate 5, the spacer 11B, and the sealing resin 6.

  With this configuration, a part of the resin forming the lens 4 is in contact with the sealing resin 6, so that the lens 4 may be peeled off from the sealing resin 6 as compared with the first embodiment. If the gap 21 is reduced to a certain extent, there is no practical problem. In this case, the width of the gap 21 (the distance between the transparent substrate 5 and the spacer 11B) is preferably 100 μm or less. Further, the gap between the side wall of the transparent substrate 5 and the spacer 11B as shown in the first embodiment is not an adhesive (not shown) used when fixing the spacer 11B to the sealing resin 6, but the lens 4 It can be filled with a transparent resin material that forms. Therefore, when the spacer 11B is fixed to the sealing resin 6, it is possible to prevent the adhesive from protruding beyond the side surface of the transparent substrate 5 to the upper surface. In addition, it is not necessary to precisely manage the application of the adhesive, and the gap 21 can be filled in the same process for forming the lens 4. Therefore, the number of processes and individual process time can be reduced. In addition, the dimensional accuracy of the hole portion of the spacer 11B for including the transparent substrate 5 can be made looser than that of the first embodiment. Therefore, the spacer 11B can be manufactured at low cost, and as a result, the solid-state imaging device 1B can be manufactured at low cost.

[Embodiment 4]
Another embodiment of the solid-state imaging device according to the present invention will be described below with reference to FIG. In this embodiment, in order to explain the difference from the first embodiment, for the sake of convenience of explanation, members having the same functions as the members described in the first embodiment are denoted by the same member numbers, The description is omitted.

  5A is a cross-sectional view of the solid-state imaging device 1C, and FIG. 5B is an enlarged cross-sectional view of the end portion 4C of the lens 4 in FIG. 5A.

  As shown in FIG. 5B, in the solid-state imaging device 1C, the thickness of the spacer 11C is the difference in height between the upper surface of the transparent substrate 5 and the upper surface of the sealing resin 6, that is, the sealing of the transparent substrate 5 The height of the portion protruding from the resin 6 is larger. Therefore, the upper surface of the spacer 11C protrudes from the upper surface of the transparent substrate 5 by the gap 20C. With such a configuration, when the solid-state imaging device 1C is manufactured, the mold for forming the lens 4 comes into contact only with the spacer 11C. When the height of the upper surface of the spacer is the same as the height of the upper surface of the transparent substrate 5 and the mold for forming the lens 4 is in contact with both the transparent substrate 5 and the spacer, when the spacer 11C is manufactured, When an error occurs in the thickness, a slight gap is generated between the mold and the spacer, and the lens material fluidized when the lens 4 is formed exudes from the slight gap. By setting the spacer 11C to the above-described configuration, it is possible to prevent a slight gap from occurring and prevent the lens material from seeping out.

  Further, when the lens 4 is formed, the flat end portion of the mold for forming the lens 4 is in contact only with the spacer 11C. Therefore, since the generated mold tilt is smaller than when the flat end of the mold is in contact with the spacers and the four corners of the transparent substrate 5, a high-performance optical element can be manufactured.

[Embodiment 5]
The following will describe another embodiment of the solid-state imaging device according to the present invention with reference to FIG. In this embodiment, in order to explain the difference from the first embodiment, for the sake of convenience of explanation, members having the same functions as the members described in the first embodiment are denoted by the same member numbers, The description is omitted.

  FIG. 6 is a cross-sectional view of the solid-state imaging device 1D.

  As shown in FIG. 6, the lens 4 is formed on the transparent substrate 5 and the spacer 11D and completely covers the effective pixel region 3a. The width of the spacer 11D in the cross section is W3 on one side, W4 on the other side, and W3 <W4. In the solid-state imaging device 1D, a dew condensation prevention groove, a signal processing circuit, and the like are formed around the effective pixel region 3a (not shown), and therefore, the central five axes ′ of the transparent substrate 5 and the effective pixel region The central axis of 3a is not coincident. Since the central axis 4 ′ of the lens 4 and the central axis of the effective pixel region 3 a need to coincide with each other, the central axis 4 ′ of the lens 4 and the central axis 5 ′ of the transparent substrate 5 are shifted from each other. is there. When the width of the spacer is uniform on the left and right, there is a region where the outer periphery of the lens 4 protrudes from the spacer. In the solid-state imaging device 1D, the width of the spacer is W4 and the width of the spacer on the opposite side is W3 in the direction in which the central axis 4 ′ of the lens 4 is present when viewed from the central axis 5 ′ of the transparent substrate 5. As shown in FIG. Thereby, the problem that the outer peripheral part of the lens 4 protrudes from a spacer can be solved.

  As described above, the spacer 11D corresponds to the outer shape of the transparent substrate 5 and the solid-state imaging device so that the central axis of the lens 4 coincides with the central axis of the effective pixel region and the fluidized lens material does not flow out. Therefore, it is preferable to design appropriately.

[Embodiment 6]
The following will describe another embodiment of the solid-state imaging device according to the present invention with reference to FIG. In this embodiment, in order to explain the difference from the first embodiment, for the sake of convenience of explanation, members having the same functions as the members described in the first embodiment are denoted by the same member numbers, The description is omitted.

  FIG. 7 is a cross-sectional view of the solid-state imaging device 1E.

  As shown in FIG. 7, the lens 4 is formed on the transparent substrate 5 and the spacer 11E, and covers the entire area of the effective pixel area 3a. The outer peripheral portion of the spacer 11E coincides with the outer peripheral portion (the outer peripheral portion of the sealing resin 6) of the solid-state imaging device 1E, and completely covers the upper surface of the sealing resin 6. That is, the outer dimension (planar dimension) of the spacer 11E matches the outer dimension of the solid-state imaging device 1E.

  A plurality of solid-state imaging devices (solid-state imaging device 1 ′ shown in FIG. 3) before the lens 4 is formed are collectively manufactured and then diced into individual pieces. At this time, a slight sagging may occur in the outer peripheral portion of the solid-state imaging device 1 ′ due to dicing. After the lens 4 is formed on the solid-state imaging device 1 ′, when the imaging lens is attached to the solid-state imaging device via an imaging lens holder or the like, the imaging lens holder is When positioned in the portion, the imaging lens may be tilted (tilted), and the optical axis of the imaging lens may not match the optical axis of the solid-state imaging device.

  However, with the configuration of the solid-state imaging device 1E, since the spacer 11E covers the sagging portion, the above-described problem of tilting of the imaging lens does not occur, and the yield as the solid-state imaging device can be improved.

[Embodiment 7]
An embodiment of the photographing apparatus according to the present invention will be described below with reference to FIG. For convenience of explanation, members having the same functions as those described in the first embodiment are given the same member numbers, and description thereof is omitted.

  FIG. 8A is a cross-sectional view illustrating a configuration of an imaging device 61A including the solid-state imaging device 1A. FIG. 8B is a cross-sectional view showing a configuration of an imaging device 61E incorporating the solid-state imaging device 1E.

  As shown in FIG. 8A, the imaging device 61A includes a solid-state imaging device 1A, an imaging lens 62 having a flat surface and two convex surfaces, and a plane on the flat surface of the imaging lens 62. And an imaging lens holder 64 for adjusting and fixing the distance between the imaging lens 62 and the sensor chip 3 in the optical axis direction.

  The imaging lens 62 is an optical path delimiter that demarcates the optical path of light incident on the solid-state imaging device 1A. The light shielding unit 63 is a diaphragm of the imaging lens 62 and suppresses the incidence of stray light out of the light incident on the imaging lens 62. The imaging lens holder 64 is formed near the outer periphery of the sealing resin 6.

  The external connection terminal 10 provided on the bottom surface of the solid-state imaging device 1A is electrically connected to a conductor wiring formed on the wiring board (not shown). Further, the conductor wiring is electrically connected to an image processing apparatus bonded on the conductor wiring (not shown). That is, the solid-state imaging device 1A is electrically connected to the image processing device via the conductor wiring.

  The light incident from the imaging lens 62 enters the effective pixel region 3 a on the sensor chip 3 through the lens 4, the transparent substrate 5, and the air layer 8. The light incident on the effective pixel region 3a is converted into an electric signal and transmitted to the image processing apparatus. The image processing apparatus forms an image based on the received electrical signal.

  With the above configuration, the imaging device 61A has the same functions and operations as the solid-state imaging device 1A. Note that the imaging device 61A may include a solid-state imaging device 1B or a solid-state imaging device 1C instead of the solid-state imaging device 1A.

  As shown in FIG. 8B, the imaging device 61E includes a solid-state imaging device 1E instead of the solid-state imaging device 1A. It is the same as the imaging device 61A except that the solid-state imaging device 1E is provided instead of the solid-state imaging device 1A. In the imaging device 61A, an imaging lens holder 64 for adjusting and fixing the distance in the optical axis direction between the imaging lens 62 and the sensor chip 3 is directly provided on the sealing resin 6. On the other hand, in the imaging device 61E, since the spacer 11E covers the entire top surface of the sealing resin 6, the imaging lens holder 64 is in direct contact with the spacer 11E. With such a configuration, it is possible to reduce the possibility that the imaging lens 62 is tilted due to partial sagging in the end surface portion of the sealing resin 6 of the solid-state imaging device 1E caused by dicing.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and the technical means disclosed in different embodiments can be appropriately combined. Such embodiments are also included in the technical scope of the present invention.

  In addition, the solid-state imaging device of the present invention can also be described as having the following points as feature points. That is, an image pickup device in which an effective pixel region is formed, a transparent substrate disposed so as to face the effective pixel region, a part of the image pickup device such that there is a step with respect to the upper surface of the transparent substrate, and A sealing resin that seals a part of the side surface of the transparent substrate; a spacer that is partly disposed on the sealing resin; and an optical element that is disposed on the transparent substrate. It is characterized by that. In addition, it can be said that the manufacturing method of the solid-state imaging device according to the present invention has the following features. That is, at least a step of disposing a transparent substrate so as to face an effective pixel region of the solid-state image sensor, a step of resin-sealing at least a part of the solid-state image sensor and a side wall of the transparent substrate, and a spacer And a step of forming an optical element made of a transparent resin on at least the transparent substrate and a part of the spacer.

  According to the present invention, it is possible to provide a solid-state imaging device that achieves downsizing and thinning using a simple and inexpensive method, and that has high reliability, environmental resistance, and performance. Therefore, the present invention can be applied to all optical devices for forming an image based on light from a subject. In particular, it is effective to apply to a camera module for a mobile phone and a digital camera. It can be used for the purpose of downsizing, thinning and widening the device.

(A) is a top view which shows the structure of the solid-state imaging device in one Embodiment of this invention, (b) is sectional drawing in the EE 'cut line of (a), (c), It is an expanded sectional view of transparent substrate edge part 5A in (b), (d) is a sectional view in the FF 'section line of (a), (e) is lens edge part 4A in (d). FIG. It is a graph which shows the temperature change in a lead-free solder reflow mounting process. (A) And (b) is sectional drawing explaining each process in the manufacturing method of the solid-state imaging device of FIG. (A) is sectional drawing which shows the structure of the solid-state imaging device in another one Embodiment of this invention, (b) is an expanded sectional view of the lens edge part 4B in (a). (A) is sectional drawing which shows the structure of the solid-state imaging device in another one Embodiment of this invention, (b) is an expanded sectional view of 4 C of lens edge parts in (a). It is sectional drawing which shows the structure of the solid-state imaging device in another one Embodiment of this invention. It is sectional drawing which shows the structure of the solid-state imaging device in another one Embodiment of this invention. (A) is sectional drawing which shows the structure of the imaging device in one Embodiment of this invention, (b) is sectional drawing which shows the structure of the imaging device in another embodiment of this invention. It is a figure explaining the path | route of the light which injects into a solid-state image sensor. It is a figure which shows the structure of the conventional solid-state imaging device. It is sectional drawing or a top view explaining each process in the manufacturing method of the protection member in another conventional solid-state imaging device. It is sectional drawing which shows the structure of another conventional solid-state imaging device. It is sectional drawing which shows the structure of the conventional imaging device.

Explanation of symbols

1A to 1E Solid-state imaging device 2 Sensor substrate 3 Sensor chip (solid-state imaging device)
3a Effective pixel area 4 Lens (optical element)
4A to 4E Region 5 Transparent substrate 5A Region 6 Sealing resin (coating resin)
7 Holding portion 8 Air layer 9 Bonding wire 10 External connection terminals 11A to 11E Spacer (peeling prevention means, closing means)
20A, 20C Gap 21 Gap (gap)
22 UV lamp 26 Transparent mold (mold)
27 Rod 41 Photocurable resin (optical element forming resin, energy curable resin)
61A, 61E Imaging device 62 Imaging lens 63 Light shielding part 64 Imaging lens holder

Claims (18)

A solid-state imaging device in which an effective pixel region is formed;
A transparent substrate disposed opposite to the effective pixel region;
Coating resin covering at least the side wall of the transparent substrate;
A solid-state imaging device including an optical element disposed on a light incident side surface of the transparent substrate,
An anti-peeling means having higher adhesion to the optical element than the coating resin is disposed between the coating resin and the optical element,
The solid-state imaging device, wherein the peeling prevention means is in contact with the coating resin and the optical element.   The solid-state imaging device according to claim 1, wherein the transparent substrate has a smaller planar dimension than the solid-state imaging element.   3. The solid-state imaging device according to claim 1, wherein a part of the transparent substrate including a light incident side surface protrudes from the coating resin.   4. The solid-state imaging device according to claim 3, wherein a height of a portion of the transparent substrate that protrudes from the coating resin is 10 μm to 100 μm.   5. The solid-state imaging device according to claim 3, wherein a thickness of the peeling prevention unit is the same as a height of a portion protruding from the coating resin.   5. The solid-state imaging device according to claim 3, wherein a thickness of the peeling prevention unit is larger than a height of a portion protruding from the coating resin.   The solid-state imaging device according to any one of claims 1 to 6, wherein a gap is formed between the peeling preventing means and the transparent substrate.   The solid-state imaging device according to claim 7, wherein a part of the optical element is further in contact with the coating resin.   9. The solid-state imaging device according to claim 1, wherein a planar dimension of the peeling prevention unit coincides with a planar dimension of the apparatus itself.   10. The solid-state imaging device according to claim 1, wherein a surface reflectance of the peeling prevention unit is 4% or less. 11.   11. The solid-state imaging device according to claim 1, wherein the optical element has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C. 11.   The solid-state imaging device according to any one of claims 1 to 11, wherein an infrared cut film for preventing transmission of infrared rays is provided on a surface of the transparent substrate on the optical element side.   The solid-state imaging device according to claim 12, wherein a surface of the infrared cut film on the optical element side is subjected to silane coupling treatment.   An imaging device comprising the solid-state imaging device according to any one of claims 1 to 13. Place the transparent substrate so as to face the effective pixel area of the solid-state image sensor,
At least the side wall of the transparent substrate is covered with a coating resin,
A method of manufacturing a solid-state imaging device, wherein a mold is used to form an optical element from an optical element forming resin on the transparent substrate,
A method of manufacturing a solid-state imaging device, wherein a closing means for closing a space formed between the mold and the coating resin is disposed on the coating resin when the optical element is formed. When forming the optical element,
Fill the mold with an energy curable resin having fluidity,
16. The method of manufacturing a solid-state imaging device according to claim 15, wherein the energy curable resin is cured after the energy curable resin is filled and after the closing means is disposed.   The said type | mold and the said energy curable resin are transparent, The said energy curable resin is hardened | cured, confirming the position which should form the said optical element through the said type | mold. Manufacturing method of solid-state imaging device.   18. The method for manufacturing a solid-state imaging device according to claim 16, wherein the energy curable resin is a light energy curable resin or a heat energy curable resin.

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