JP2010199410A - Semiconductor device and method for manufacturing thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing thereof, which improves quality by preventing disconnection. <P>SOLUTION: The semiconductor device includes: a semiconductor element having a light receiving/emitting region which receives/emits light and a plurality of bonding pads in a main plane; a recessed substrate having a recessed portion in which a first stepped portion serving as a step is formed in the side of the recessed portion, a plurality of connecting terminals being provided in the first stepped portion, and the semiconductor element is mounted on the bottom face of the recessed portion which is the plane opposite to the main plane; a wire which electrically connects the bonding pads and the connecting terminals; and a resin which covers the semiconductor element except the light receiving/emitting region and the wire. The recessed substrate is further provided with a second stepped portion serving as the step in the position different to the first stepped portion in the side of the recessed portion. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device including a light emitting / receiving element and a method for manufacturing the same.

  In recent years, there has been an increasing demand for high-density mounting of semiconductor devices as electronic devices become smaller, thinner, and lighter. Furthermore, in conjunction with the high integration of semiconductor elements due to advances in microfabrication techniques, so-called chip mounting techniques have been proposed in which semiconductor elements of chip size packages or bare chips are directly mounted.

  Such a trend is the same in a semiconductor device including light emitting and receiving elements, and various configurations have been proposed for semiconductor devices including light receiving and emitting elements.

  For example, an element intended to reduce the thickness and size of a semiconductor device by directly bonding a transparent member with a low refractive index adhesive on a microlens in a light emitting / receiving region that emits or receives light. A structure and a manufacturing method thereof have been proposed (see, for example, Patent Document 1).

  The element structure of this semiconductor device is such that a microlens is directly formed on a semiconductor element having a light receiving / emitting region, and a transparent adhesive is applied on the microlens while maintaining parallelism with the light emitting / receiving region serving as an imaging region. It is manufactured by a method of directly bonding through. At this time, by filling an adhesive having a low refractive index between the microlens and the transparent member so that there is no gap, even if there is a change in the environmental conditions in which this semiconductor device is used, the electrical characteristics and optical characteristics are improved. It is possible to ensure reliability.

  Conventionally, when a semiconductor element having a light receiving / emitting region is mounted on a ceramic package, an air region not filled with resin or the like between the microlens and a transparent member that is a part of the package has a constant volume. It will exist. For this reason, a semiconductor device on which such a semiconductor element is mounted becomes thicker by the air region. On the other hand, there has been proposed a semiconductor device having a structure in which an air layer not filled with resin or the like is made as small as possible by raising ribs that support a transparent member with a liquid resin. Thus, the thickness from the bottom surface of the semiconductor device to the transparent member can be mounted on the circuit module or the like as the thickness of the semiconductor device. As described above, since a semiconductor device having a light receiving / emitting region can be directly mounted on a circuit module or the like, a semiconductor device having a thin light receiving / emitting region can be realized at low cost.

  A method for manufacturing the above-described conventional semiconductor device will be described. First, a transparent member is attached to a semiconductor element including a light emitting / receiving region and a plurality of bonding pads with the light emitting / receiving region facing upward via an adhesive. And the semiconductor element by which the transparent member was affixed on the concave base-material surface is mounted (die bond). Next, the bonding pad on the semiconductor element and the connection terminal in the concave substrate are connected by an Au (gold: Gold) wire. Next, a resin is filled so as to cover the semiconductor element, the side surface of the transparent member, and the Au wire. In this way, a semiconductor device having a light emitting / receiving region is manufactured.

  Next, the configuration of the conventional semiconductor device manufactured as described above will be described.

  FIG. 5 is a sectional view and an overhead view of a conventional semiconductor device.

  A semiconductor device 500 illustrated in FIG. 5 includes a transparent member 501, a semiconductor element 502, a concave substrate 503, a resin 504, an Au wire 505, and a connection terminal 506.

  The transparent member 501 is attached to the light receiving / emitting region of the semiconductor element 502 via the transparent adhesive 512.

  The semiconductor element 502 includes a plurality of bonding pads, and a transparent member 501 is attached via a transparent adhesive 512.

  The concave substrate 503 is provided with a plurality of connection terminals 506 at a step portion 513 formed inside. The concave substrate 503 has a semiconductor element 502 mounted on the bottom surface of the recess.

  The Au wire 505 electrically connects a plurality of connection terminals 506 provided in the concave substrate 503 and bonding pads on the semiconductor element 502.

  The resin 504 fills and covers the semiconductor element 502, the side surface of the transparent member 501, and the Au wire 505. Here, the resin 504 needs to expose the main surface of the transparent member 501 in order to function as a light emitting / receiving element, and covers a portion other than the main surface of the transparent member 501. That is, the resin 504 does not cover the main surface of the transparent member 501.

As described above, the conventional semiconductor device 500 is configured.
Japanese Patent Application No. 2008-013049

  However, the conventional semiconductor device 500 has the following problems. That is, since the conventional semiconductor device 500 is a semiconductor device including light emitting and receiving elements, the main surface of the transparent member 501 needs to be exposed, and the main surface is not covered and the other surfaces are covered with the resin 504. Has been. The resin 504 is filled between the concave substrate 503 and the transparent member 501. Therefore, the stress of the resin due to heat escapes to the main surface side of the transparent member 501 from which the resin 504 is released. That is, the stress of the resin due to heat works greatly in the upward direction (the upward direction shown in FIG. 5, that is, the direction from the semiconductor element 502 to the transparent member 501). As a result, peeling occurs at the step portion 513 having the connection terminal, and the electrical connection between the Au wire 505 and the bonding pad is broken.

  As shown in the above example, in the conventional semiconductor device 500 including light receiving and emitting elements, when heat stress is applied, the heat stress is peeled off at the step portion 513 having the connection terminal 506 of the concave substrate 503. appear. As a result, there is a problem that the Au wire 505 and the connection terminal 506 on the concave substrate 503 are disconnected, resulting in an electrical failure and a reduction in quality.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device that improves quality by preventing disconnection and a manufacturing method thereof.

  In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element having a light receiving / emitting region that is a region that emits or receives light and a plurality of bonding pads on a main surface, and a concave substrate having a recess. A first step portion that forms a step on the side surface in the recess, and a plurality of connection terminals are provided on the first step portion, and the semiconductor element is mounted on the bottom surface of the recess on a surface opposite to the main surface. A concave substrate, a wire that electrically connects the bonding pad and the connection terminal, a resin that covers the semiconductor element excluding the light emitting and receiving region and the wire, and the concave substrate further includes: The second step portion which becomes a step is provided at a position different from the first step portion on the side surface in the recess. Here, it is preferable that the second step portion is provided between the first step portion and the bottom surface of the recess.

  With these configurations, the resin stress during heating works strongly upward in the concave substrate, but peeling starts from the step portion of the second step portion located below the concave substrate relative to the first step portion. And once peeling occurs, the stress of the resin is released and becomes stable, so no further peeling occurs. In other words, peeling can be prevented from occurring at the connection portion between the Au wire and the concave substrate by releasing the resin stress at a portion where there is no problem in quality, and a semiconductor device composed of a light receiving and emitting element having a high quality level. Can get. In this way, it is possible to realize a semiconductor device that improves quality by preventing disconnection.

  For example, a camera module may be formed using the semiconductor device having the above structure. In that case, since the semiconductor device having the above structure is small and thin, a smaller and thinner camera module can be realized. Further, for example, a medical endoscope module may be formed using the semiconductor device having the above configuration. In that case, since the semiconductor device having the above-described configuration is small, thin, and highly reliable, a small and highly reliable medical endoscope module can be realized.

  In addition, in order to solve the above problems, a method for manufacturing a semiconductor device according to the present invention forms a first step portion and a second step portion that form steps at different positions on the inner surface of the concave portion of a concave substrate having a concave portion. The first step of providing a plurality of connection terminals in the first step portion, and the light receiving / emitting region of the semiconductor element having a light emitting / receiving region and a plurality of bonding pads on the main surface are transparent in the light receiving / emitting region. A second step of attaching a transparent member via an adhesive, and mounting the semiconductor element on a bottom surface of the concave portion of the concave substrate on a surface opposite to the main surface to which the transparent member is attached; the bonding pad; A third step of electrically connecting the connection terminal with a wire, and covering the transparent member excluding a surface through which light is transmitted to the light receiving and emitting region with a liquid resin together with the semiconductor element and the wire And a fourth step.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device comprised with the light emitting / receiving element which improves quality by preventing a disconnection, and its manufacturing method are realizable.

  Specifically, in a semiconductor device including light emitting and receiving elements, it is possible to realize a semiconductor device that does not cause disconnection failure due to thermal stress of the resin and a method for manufacturing the same.

  The best mode for carrying out the present invention will be described below with reference to the drawings. In these drawings, the thicknesses, lengths, and the like of the respective constituent members are different from the actual shapes in view of the creation of the drawings. In addition, the number of electrodes and terminals of each component is different from the actual number and is easy to show. Further, the material of each constituent member is not limited to the material described below.

(Embodiment 1)
FIG. 1 is a diagram illustrating a configuration of a semiconductor device according to the first embodiment. FIG. 1A shows a cross-sectional view of the semiconductor device 10 according to the first embodiment, and FIG. 1B shows an overhead view of the semiconductor device 10 according to the first embodiment.

  A semiconductor device 10 shown in FIG. 1 includes a transparent member 1, a semiconductor element 2, a concave substrate 3, a resin 4, an Au wire 5, and a connection terminal 6.

  The concave substrate 3 has a first step portion 13 and a second step portion 14 that form steps on the side surfaces of the recess. In the concave substrate 3, a plurality of connection terminals 6 are provided on the first step portion 13. The concave substrate 3 has the semiconductor element 2 mounted (die-bonded) on the bottom surface of the concave portion.

  Here, the first step portion 13 is preferably provided in the concave substrate 3 above the second step portion 14, that is, at a position away from the bottom surface of the concave portion of the concave substrate 3. In other words, the second step is provided at a position between the first step 13 having the connection terminal 6 and the bottom surface of the concave substrate 3 on which the semiconductor element 2 is mounted.

  The Au wire 5 electrically connects the plurality of connection terminals 6 provided in the first step portion 13 of the concave substrate 3 and the plurality of bonding pads on the semiconductor element 2.

  The semiconductor element 2 is composed of a light emitting / receiving element and includes a plurality of bonding pads. The semiconductor element 2 is mounted on the concave substrate 3 on the surface opposite to the main surface having the light receiving region surface, and the transparent member 501 is attached to the main surface having the light receiving / emitting region via the transparent adhesive 512.

  In the semiconductor element 2, a plurality of pixels are arranged in the vicinity of the center of the main surface, and a microlens is formed on each pixel. The semiconductor element 2 has a light emitting / receiving area where a microlens is formed and a peripheral circuit area where a circuit including an element electrode is formed (not shown).

In addition, although the following demonstrates that the material of the semiconductor element 2 is silicon (Si), it is not restricted to it. Considering application to semiconductor lasers and light-emitting diodes, III-V compounds and II-VI
It may be a group compound.

  The transparent member 1 is attached to the light receiving / emitting region of the semiconductor device 500 via the transparent adhesive 12.

  The transparent member 1 is sized to cover the entire surface of the light receiving / emitting region of the semiconductor element 2. The transparent member 1 is processed so that both upper and lower surfaces are parallel and processed into an optical plane, and the side surface is processed so as to have a rectangular projection plane perpendicular to the both surfaces. Here, the projection plane of the transparent member 1 may have four corners cut off at approximately 45 °, or in addition, one edge or both edges may be chamfered.

  Moreover, as a material of the transparent member 1, for example, a borosilicate glass plate may be used, and a low-pass filter made of a quartz plate or a calcite plate having a birefringence characteristic in order to prevent moire caused by interference fringes in a specific direction. It may be used. Further, for example, a low-pass filter in which a quartz plate or a calcite plate is bonded so that birefringence characteristics are orthogonal to both sides of the infrared cut filter may be used. Furthermore, the transparent member 1 may be a transparent epoxy resin plate, an acrylic resin plate, or a transparent alumina plate.

  When a borosilicate glass plate is used for the transparent member 1, the thickness of the transparent member 1 is in the range of 200 μm to 1000 μm, and preferably in the range of 300 μm to 700 μm. Here, the reason why the lower limit (minimum) of the thickness is set to 200 μm is to realize a small and thin thickness in which the mounting height of the semiconductor device 10 during mounting is 500 μm or less. The upper limit (maximum) of the thickness is set to 1000 μm in order to realize a transmittance of 90% or more for incident light having a wavelength of 500 nm. The reason why the preferable thickness range is 300 μm to 700 μm is that the most stable semiconductor device 10 can be produced using the current manufacturing technology. Furthermore, it is because an inexpensive, small and thin semiconductor device can be realized by using inexpensive general-purpose components.

  In addition, when using a transparent epoxy resin board, a transparent acrylic resin, or a board | substrate transparent alumina board for the transparent member 1, it is necessary to determine thickness considering a transmittance | permeability. On the other hand, when a crystal plate or calcite is used for the transparent member 1, in addition to the difference in transmittance, the double imaging interval due to birefringence relates to the thickness of the transparent member 1. It is necessary to determine the thickness in consideration of the pixel interval of 2.

  The transparent adhesive 12 is an optically transparent adhesive used when the transparent member 1 is fixed on the light emitting / receiving area of the semiconductor element 2. Here, the transparent adhesive 12 may be, for example, an acrylic resin, or may be an epoxy resin or a polyimide resin that is blended with a resin having no absorption edge in the visible light wavelength range.

  Further, the transparent adhesive 12 has a property of lower refractive index than the microlens formed on the light emitting / receiving region of the semiconductor element 2 after curing, and is cured by ultraviolet irradiation or heating or a combination of both. Has characteristics.

  The resin 4 covers the side surface of the transparent member 1 attached to the light receiving / emitting region via the transparent adhesive 12, the semiconductor element 2, and the Au wire 5. That is, the resin 4 covers the entire main surface of the transparent member 1 and the side surface of the transparent member 1 except on the light emitting / receiving region of the semiconductor element 2. Further, the resin 4 has a light shielding property, has a flat upper surface, and is formed to have substantially the same thickness as the transparent member 1.

  Hereinafter, although the material of the resin 4 is described as an epoxy resin composed of an inorganic filler and a pigment, it is not limited thereto. For example, in the case of applying a low-elasticity cured product in order to reduce the thickness of the base material of the semiconductor element 2 and improve the thermal shock resistance and moisture resistance as the semiconductor device 10, even if it is a biphenyl resin or a silicone resin Good.

  Note that the selection and blending amount of the inorganic filler and the pigment constituting the resin 4 used in the semiconductor device 10 are important for suppressing warpage of the semiconductor device 10 and shielding light.

  For example, in order to prevent disconnection failure due to wiring corrosion in the semiconductor element 2, it is preferable to reduce the water absorption rate of the cured resin obtained by curing the resin 4. Therefore, the inorganic filler of the resin 4 is melted and crystallized. High-purity silica from which properties are removed is processed into spheres of various diameters and blended appropriately.

  In addition, in order to prevent incident light around the transparent member 1 from entering from the side surface of the transparent member 1 and becoming stray light, the electrical resistance in the cured resin is lowered in the high-temperature and high-humidity environment. It is preferable that it is blended as much as possible in the cured product of the resin 4 as long as it does not induce defects. For this reason, it is important to select a material having a particle size and low polarizability so that the blending amount in the cured product is high.

  For example, as the pigment, carbon black having a high light-shielding color tone is used. Then, a part of incident light from the resin 4 can be prevented from reaching the pn junction part or the gate part of the passive element or active element on the main surface of the semiconductor element 2, so that the semiconductor element 2 malfunctions. Can be prevented.

  As described above, the semiconductor device 10 having the first step portion 13 and the second step portion 14 in the concave substrate 3 is configured.

  In the semiconductor device 10 configured as described above, the resin stress during heating works strongly upward in the concave substrate 3, but peels from the second step portion 14 located below the first step portion 13. Begins. Once the peeling occurs, the stress of the resin is released and becomes a stable state, so that further peeling (peeling at the first step portion 13) does not occur. That is, by releasing the resin stress at a portion where there is no problem in quality, peeling can be prevented from occurring at the first step portion 13, that is, at the connection terminal 6 of the Au wire 5 and the concave substrate 3.

  Next, a method for manufacturing the semiconductor device 10 will be described.

  FIG. 3 is a diagram for explaining the method of manufacturing the semiconductor device in the first embodiment.

  First, a first step portion 13 having a connection terminal 6 and a second step portion 14 not having a connection terminal 6 are provided in the concave substrate 3 (FIG. 3A). Here, the first step portion 13 having the plurality of connection terminals 6 is provided above the second step portion 14. In other words, the second step portion 14 is provided between the first step portion 13 having the connection terminal 6 and the concave substrate 3 on which the semiconductor element 2 is mounted.

  Next, the transparent member 1 is attached to the light emitting / receiving area of the semiconductor element 2 having a plurality of bonding pads via the transparent adhesive 12. Then, the semiconductor element 2 with the transparent member 1 attached is mounted (die-bonded) on the bottom surface of the concave portion of the concave substrate 3 (FIG. 3B).

  Next, a plurality of connection terminals 6 provided in the first step portion 13 in the concave substrate 3 and a plurality of bonding pads on the semiconductor element 2 are wire-bonded using Au wires 5 and electrically connected ( FIG. 3 (c)).

  Next, the side surface of the transparent member 1 attached to the light emitting / receiving region via the transparent adhesive 12, the semiconductor element 2, and the Au wire 5 are filled and covered with the resin 4 using the coating nozzle 15. Here, the resin 4 is liquid. Therefore, the resin 4 can be filled and coated by potting injection, screen printing, or an inkjet method. In addition, in FIG.2 (d), the example of the filling covering of the resin 4 by potting is shown.

  Next, the resin 4 is fully cured after being filled with the resin 4. Then, after the main curing, the semiconductor device 10 cleans the main surface of the transparent member 1.

  The semiconductor device 10 is manufactured as described above.

  As described above, according to the first embodiment, the resin stress is released at a portion where there is no problem in quality, so that no peeling occurs at the first step portion 13, that is, at the connection terminal 6 of the Au wire 5 and the concave substrate 3. be able to. As a result, it is possible to realize a semiconductor device and a method for manufacturing the same that improve quality by preventing disconnection.

(Modification)
In the first embodiment, in the semiconductor device 10, the second stepped portion 14 that forms a step is further formed in the first stepped portion 13 that forms a step in the concave substrate 3, and the second stepped portion 14 has one step. Although such a case was demonstrated, the aspect of the 2nd level | step-difference part 14 is not restricted to it. For example, a plurality of second stepped portions may exist between the first stepped portion having the connection terminal and the concave substrate on which the semiconductor element is mounted, and the second stepped portion may be composed of a plurality of steps. This will be described below.

  FIG. 2 is a diagram showing a cross section of a semiconductor device according to a modification of the first embodiment. In addition, the same code | symbol is attached | subjected to the element similar to Fig.1 (a) and FIG.1 (b), and detailed description is abbreviate | omitted.

  The semiconductor device 20 shown in FIG. 2 differs from the semiconductor device 10 according to the first embodiment in the configuration of the second step portion 24.

  The second step portion 24 includes a plurality of steps, and is provided at a position between the first step portion 13 having the connection terminal 6 and the bottom of the concave portion of the concave substrate 3 on which the semiconductor element 2 is mounted.

  As a result, the resin stress due to heat is surely released at the second step portion 24 having no quality problem.

  As described above, the semiconductor device 20 having the first step portion 13 and the second step portion 24 is formed in the concave substrate 3.

  Therefore, in the semiconductor device 10, the resin stress can be surely released at a portion where there is no problem in quality, and therefore, where there is a problem in quality, that is, the first step portion 13 can be prevented from being peeled off. .

(Embodiment 2)
In the second embodiment, a mode different from the second step portion 14 in the first embodiment will be described. This will be described below.

  FIG. 4 is a diagram showing a configuration of the semiconductor device according to the second embodiment. FIG. 4A shows a cross-sectional view of the semiconductor device 30 according to the second embodiment, and FIG. 4B shows an overhead view of the semiconductor device 30 according to the second embodiment. In addition, the same code | symbol is attached | subjected to the element similar to Fig.1 (a) and FIG.1 (b), and detailed description is abbreviate | omitted.

  The semiconductor device 30 shown in FIG. 4 differs from the semiconductor device 10 according to the first embodiment in that the second step portion 14 is Au plated 34.

  In the second step portion 14, Au plating 34 is applied to the step portion in order to easily cause the resin 4 and the concave substrate 3 to be peeled off.

  Note that the Au plating 34 to be applied may be a metal plating that is not Au as long as the adhesion to the resin 4 is poor, and a fluorine-based resin or a surfactant is applied instead of the metal plating. It doesn't matter.

  The Au plating 34 is not only formed on the surface of the second step portion 14 that is parallel to the bottom surface of the concave portion 3 of the concave substrate 3 on which the semiconductor element 2 is mounted, but also a vertical portion, that is, the concave substrate 3. It may be configured on the surface of the second step portion 14 which is parallel to the inner surface of the recess.

  Further, the Au plating 34 may be constituted by a plurality of continuous or discontinuous parts.

  As described above, the semiconductor device 30 having the first step portion 13 and the second step portion 14 in the concave substrate 3 is configured.

  Therefore, in the semiconductor device 30, the resin stress can be reliably released at a portion where there is no problem in quality, and therefore, where there is a problem in quality, that is, the first step portion 13 can be prevented from being peeled off. .

  As described above, according to the second embodiment, the resin stress is released at a portion where there is no problem in quality, so that peeling does not occur at the first step portion 13, that is, at the connection terminal 6 between the Au wire 5 and the concave substrate 3. Can do. As a result, it is possible to realize a semiconductor device and a method for manufacturing the same that improve quality by preventing disconnection.

  As in the first embodiment, a plurality of second stepped portions may exist between the first stepped portion having the connection terminal and the concave substrate on which the semiconductor element is mounted, and the second stepped portion has a plurality of steps. It may consist of

  Further, the camera module may be configured using the semiconductor device having the above-described configuration. Since this semiconductor device is small and thin, a smaller and thinner camera module can be realized.

  In addition, the medical endoscope module may be configured using the semiconductor device configured as described above. Since this semiconductor device is small, thin, and highly reliable, a small and highly reliable medical endoscope module can be realized.

  The semiconductor device and the manufacturing method thereof according to the present invention have been described based on the embodiment. However, the present invention is not limited to this embodiment. Unless it deviates from the meaning of this invention, the form which carried out the various deformation | transformation which those skilled in the art can think to this embodiment, and the structure constructed | assembled combining the component in different embodiment is also contained in the scope of the present invention. .

  INDUSTRIAL APPLICABILITY The present invention can be used for a semiconductor device and a manufacturing method thereof, and in particular, a highly reliable semiconductor device in which a module on which a semiconductor element constituting an image sensor such as a mobile phone and a digital camera is mounted is made smaller and thinner, and the manufacturing thereof Available in the way.

1 is a diagram showing a configuration of a semiconductor device according to a first embodiment. FIG. 6 is a diagram showing a cross section of a semiconductor device according to a modification of the first embodiment. FIG. 10 is a diagram for illustrating the method for manufacturing the semiconductor device in the first embodiment. FIG. 4 is a diagram showing a configuration of a semiconductor device according to a second embodiment. It is a figure which shows the structure of the conventional semiconductor device.

DESCRIPTION OF SYMBOLS 1,501 Transparent member 2,502 Semiconductor element 3,503 Recessed substrate 4,504 Resin, sealing resin 5,505 Au wire 6,506 Connection terminal 10, 20, 30, 500 Semiconductor device 12, 512 Transparent adhesive 13 First 1 step portion 14, 24 second step portion 15 coating nozzle 34 Au plating 513 step portion

Claims (6)

A semiconductor element having a light receiving / emitting region which is a region for emitting or receiving light and a plurality of bonding pads on a main surface;
A concave substrate having a concave portion, wherein a first step portion that is a step is formed on a side surface in the concave portion, a plurality of connection terminals are provided in the first step portion, and the semiconductor element is opposite to the main surface A concave substrate mounted on the bottom surface of the recess,
A wire for electrically connecting the bonding pad and the connection terminal;
The resin that covers the semiconductor element and the wire excluding the light emitting and receiving region,
A semiconductor device, wherein the concave substrate is further provided with a second step portion as a step at a position different from the first step portion on the side surface in the recess. The semiconductor device according to claim 1, wherein the second step portion is provided between the first step portion and a bottom surface of the recess. The semiconductor device according to claim 2, wherein the second step portion includes a plurality of steps. The semiconductor device according to claim 2, wherein the second step portion is further subjected to metal plating. In the semiconductor element, a transparent member that is a member that transmits light is attached to the light receiving and emitting region via a transparent adhesive,
The semiconductor device according to claim 1, wherein the resin covers the transparent member, the semiconductor element, and the wire except for a surface that transmits light to the light emitting / receiving region. A first step of forming a first step portion and a second step portion that are steps at different positions on the inner surface of the concave portion of the concave substrate having a concave portion, and providing a plurality of connection terminals on the first step portion;
A transparent member is attached to the light emitting / receiving region of the semiconductor element having a light emitting / receiving region and a plurality of bonding pads on the main surface through a transparent adhesive, and the transparent member is attached. A second step of mounting the semiconductor element on the bottom surface of the concave portion of the concave substrate on a surface opposite to the main surface;
A third step of electrically connecting the bonding pad and the connection terminal with a wire;
And a fourth step of covering the transparent member excluding a surface through which light is transmitted to the light emitting and receiving region with a liquid resin together with the semiconductor element and the wire.

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