JP2010273087A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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JP2010273087A
JP2010273087A JP2009122961A JP2009122961A JP2010273087A JP 2010273087 A JP2010273087 A JP 2010273087A JP 2009122961 A JP2009122961 A JP 2009122961A JP 2009122961 A JP2009122961 A JP 2009122961A JP 2010273087 A JP2010273087 A JP 2010273087A
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transparent member
semiconductor device
semiconductor element
transparent
semiconductor
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Tetsumasa Maruo
哲正 丸尾
Tetsushi Nishio
哲史 西尾
Yoshiki Takayama
義樹 高山
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that there is the case that deterioration of optical characteristics is caused in a semiconductor device having a transparent member adhered to an optical area of a semiconductor element. <P>SOLUTION: In the semiconductor device, the semiconductor element 4 is provided on the top surface of a substrate 3, and the semiconductor element 4 is electrically connected to the substrate 3 via a conductive thin line 5. The optical area is formed on the top surface of the semiconductor element 4, and a first transparent member 1 is adhered to the optical area via transparent adhesives 6. A second transparent member 2 is adhered on the top surface of the first transparent member 1 via the transparent adhesives 6, and the first transparent member 1 and the second transparent member 2 each consist of the same material. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体装置及びその製造方法に関し、特に受光領域及び発光領域の少なくとも一方を有する半導体素子を備えた半導体装置及びその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device including a semiconductor element having at least one of a light receiving region and a light emitting region and a manufacturing method thereof.

近年、電子機器の小型化且つ軽量化の要求とともに半導体装置の高密度実装化の要求が強くなっている。さらに、微細加工技術の進歩による半導体素子の高集積化とあいまって、チップサイズパッケージが提案されており、また、ベアチップを基板に直接実装する技術が提案されている。このような動向は受発光素子を備えた半導体装置においても同様であり、種々の構成を有する半導体装置が提案されている。   In recent years, demands for high-density mounting of semiconductor devices have become stronger along with demands for smaller and lighter electronic devices. Furthermore, a chip size package has been proposed in conjunction with high integration of semiconductor elements due to advances in microfabrication technology, and a technique for directly mounting a bare chip on a substrate has been proposed. Such a trend is the same for a semiconductor device including a light emitting / receiving element, and semiconductor devices having various configurations have been proposed.

例えば、マイクロレンズが受発光素子における受発光領域に設けられており、透明部材が低屈折率の接着剤を介してそのマイクロレンズ上に直接貼り付けられた半導体装置が提案されている。このような半導体装置では、小型化及び低コスト化を実現させることができる。このような半導体装置は、以下に示す方法に従って製造される。   For example, there has been proposed a semiconductor device in which a microlens is provided in a light emitting / receiving region of a light emitting / receiving element, and a transparent member is directly attached to the microlens via a low refractive index adhesive. In such a semiconductor device, downsizing and cost reduction can be realized. Such a semiconductor device is manufactured according to the following method.

まず、半導体素子における受発光領域にマイクロレンズを形成する。次に、受発光領域との平行度を保ちながら（半導体素子の主面における受発光領域に対して平行となるように）マイクロレンズ上に透明部材を直接貼り付ける。このとき、低屈折率の接着剤をマイクロレンズと透明部材との間に隙間がないように充填する。これにより、このような半導体装置を使用する環境条件が変化しても、この半導体装置の電気特性及び光学特性を確保することができ、よって、半導体装置の信頼性を確保することができる。   First, a microlens is formed in a light receiving / emitting region in a semiconductor element. Next, a transparent member is directly attached onto the microlens while maintaining parallelism with the light emitting / receiving region (so as to be parallel to the light emitting / receiving region on the main surface of the semiconductor element). At this time, an adhesive having a low refractive index is filled so that there is no gap between the microlens and the transparent member. As a result, even if the environmental conditions for using such a semiconductor device change, the electrical characteristics and optical characteristics of the semiconductor device can be ensured, and thus the reliability of the semiconductor device can be ensured.

図４は、従来の半導体装置の断面図である。   FIG. 4 is a cross-sectional view of a conventional semiconductor device.

従来の半導体装置は、凹部を有するセラミックパッケージ５３を備えている。セラミックパッケージ５３の凹部の底面上には、半導体素子５４が設けられている。半導体素子５４の上面には受発光領域（不図示）が形成されており、半導体素子５４の上面のうち受発光領域よりも周縁には電極端子（不図示）が設けられている。この電極端子は、Ａｕワイヤー５５を介して、セラミックパッケージ５３の接続端子５７に電気的に接続されている。また、半導体素子５４の受発光領域には透明接着剤５６を介して透明部材５１が接着されている。半導体素子５４及びＡｕワイヤー５５は封止樹脂５９により封止されている。このような半導体装置は以下に示す方法に従って製造される。   The conventional semiconductor device includes a ceramic package 53 having a recess. A semiconductor element 54 is provided on the bottom surface of the recess of the ceramic package 53. A light emitting / receiving region (not shown) is formed on the upper surface of the semiconductor element 54, and an electrode terminal (not shown) is provided on the periphery of the upper surface of the semiconductor element 54 with respect to the light emitting / receiving region. This electrode terminal is electrically connected to the connection terminal 57 of the ceramic package 53 via the Au wire 55. A transparent member 51 is bonded to the light receiving / emitting region of the semiconductor element 54 via a transparent adhesive 56. The semiconductor element 54 and the Au wire 55 are sealed with a sealing resin 59. Such a semiconductor device is manufactured according to the following method.

まず、透明接着剤５６を介して透明部材５１を半導体素子５４の光学領域に接着させる。次に、透明部材５１が半導体素子５４よりも上に配置されるように、透明部材５１が接着された半導体素子５４をセラミックパッケージ５３に実装する。続いて、Ａｕワイヤー５５を介して半導体素子５４の電極端子とセラミックパッケージ５３の接続端子５７とを電気的に接続し、封止樹脂５９を用いて半導体素子５４を封止する。   First, the transparent member 51 is bonded to the optical region of the semiconductor element 54 via the transparent adhesive 56. Next, the semiconductor element 54 to which the transparent member 51 is bonded is mounted on the ceramic package 53 so that the transparent member 51 is disposed above the semiconductor element 54. Subsequently, the electrode terminal of the semiconductor element 54 and the connection terminal 57 of the ceramic package 53 are electrically connected via the Au wire 55, and the semiconductor element 54 is sealed using a sealing resin 59.

実用新案登録第３１４０９７０号Utility model registration No. 3140970

透明部材が透明接着剤を介して半導体素子に直接取り付けられた半導体装置では、強度の大きな光（迷光）がその半導体装置に入射されると、その光は透明部材と空気との界面において反射し、半導体素子上に入射される。これにより、フレアが発生する。このような不具合は、半導体装置の種類によらず発生し、例えば半導体装置がレンズモジュール又はデジタルスチルカメラである場合においても発生する。フレアが発生すると、半導体装置の品質低下を招来する。   In a semiconductor device in which a transparent member is directly attached to a semiconductor element via a transparent adhesive, when light with high intensity (stray light) is incident on the semiconductor device, the light is reflected at the interface between the transparent member and air. And incident on the semiconductor element. As a result, flare occurs. Such a problem occurs regardless of the type of the semiconductor device. For example, it occurs even when the semiconductor device is a lens module or a digital still camera. When flare occurs, the quality of the semiconductor device is degraded.

本発明は、かかる点に鑑みてなされたものであり、その目的とするところは、半導体装置の光学的特性を向上させることにある。   The present invention has been made in view of this point, and an object thereof is to improve the optical characteristics of a semiconductor device.

本発明に係る半導体装置は、基板と、半導体素子と、導電性細線と、第１透明部材と、第２透明部材とを備えている。半導体素子は、基板の上面上に設けられており、受光領域及び発光領域の少なくとも一方として機能する光学領域を上面に有している。導電性細線は、基板と半導体素子とを電気的に接続する。第１透明部材は、透明接着剤を介して半導体素子の光学領域に接着されている。第２透明部材は、その透明接着剤を介して第１透明部材の上面に接着されており、第１透明部材と同一の材料からなる。   A semiconductor device according to the present invention includes a substrate, a semiconductor element, a conductive thin wire, a first transparent member, and a second transparent member. The semiconductor element is provided on the upper surface of the substrate and has an optical region functioning as at least one of a light receiving region and a light emitting region on the upper surface. The conductive thin wire electrically connects the substrate and the semiconductor element. The first transparent member is bonded to the optical region of the semiconductor element via a transparent adhesive. The second transparent member is bonded to the upper surface of the first transparent member via the transparent adhesive, and is made of the same material as the first transparent member.

このような構造では、透明部材の厚みが従来よりも厚くなる。よって、強度の大きな光（迷光）が半導体装置に入射されて透明部材と空気との境界において反射しても、その光が半導体素子へ入射されることを防止できる。従って、半導体素子の光学領域に第１透明部材が接着されたことに起因するフレアの発生を防止することができる。   In such a structure, the thickness of the transparent member becomes thicker than before. Therefore, even if light with high intensity (stray light) is incident on the semiconductor device and reflected at the boundary between the transparent member and air, the light can be prevented from entering the semiconductor element. Accordingly, it is possible to prevent the occurrence of flare due to the first transparent member being bonded to the optical region of the semiconductor element.

本発明に係る半導体装置では、第２透明部材は、平面視において、第１透明部材よりも大きいことが好ましい。これにより、導電性細線を外部環境から保護することができる。   In the semiconductor device according to the present invention, the second transparent member is preferably larger than the first transparent member in plan view. Thereby, a conductive fine wire can be protected from an external environment.

本発明に係る半導体装置では、第１透明部材は、下面が上面よりも小さくなるようにテーパー状に形成されていることが好ましい。これにより、第１透明部材の側面から入射する光（迷光）が半導体素子の光学領域に到達することを防止できる。   In the semiconductor device according to the present invention, the first transparent member is preferably formed in a tapered shape so that the lower surface is smaller than the upper surface. Thereby, the light (stray light) incident from the side surface of the first transparent member can be prevented from reaching the optical region of the semiconductor element.

本発明に係る半導体装置では、第２透明部材の下面は、第１透明部材の上面よりも大きいことが好ましい。これにより、第２透明部材を第１透明部材の上面に強固に固定することができるので、外力が半導体装置に加わった場合であっても第２透明部材が第１透明部材の上面から外れてしまうことを防止できる。   In the semiconductor device according to the present invention, the lower surface of the second transparent member is preferably larger than the upper surface of the first transparent member. Thereby, since the second transparent member can be firmly fixed to the upper surface of the first transparent member, the second transparent member is detached from the upper surface of the first transparent member even when an external force is applied to the semiconductor device. Can be prevented.

後述の好ましい実施形態では、基板の上面上には複数の接続端子が設けられており、半導体素子の上面上のうち光学領域よりも周縁には複数の電極端子が設けられており、接続端子は導電性細線を介して電極端子に接続されている。このような半導体装置では、接続端子、電極端子及び導電性細線が樹脂により封止されていることが好ましい。これにより、電気的な接続部分を絶縁することができるので、半導体装置の耐候性を向上させることができる。   In a preferred embodiment described later, a plurality of connection terminals are provided on the upper surface of the substrate, and a plurality of electrode terminals are provided on the periphery of the optical element on the upper surface of the semiconductor element. It is connected to the electrode terminal via a conductive thin wire. In such a semiconductor device, it is preferable that the connection terminal, the electrode terminal, and the conductive thin wire are sealed with resin. Thereby, since an electrical connection part can be insulated, the weather resistance of a semiconductor device can be improved.

本発明の半導体装置の製造方法は、基板の上面上に、受光領域及び発光領域の少なくとも一方として機能する光学領域を上面に有する半導体素子を固定する工程と、基板と半導体素子とを電気的に接続する工程と、半導体素子の光学領域に、第１透明部材を接着する工程と、第１透明部材の上面に、第２透明部材を接着する工程とを備えている。これにより、本発明の半導体装置を製造することができる。   According to a method of manufacturing a semiconductor device of the present invention, a step of fixing a semiconductor element having an optical region functioning as at least one of a light receiving region and a light emitting region on an upper surface of a substrate, and electrically connecting the substrate and the semiconductor element. A step of bonding, a step of bonding the first transparent member to the optical region of the semiconductor element, and a step of bonding the second transparent member to the upper surface of the first transparent member. Thereby, the semiconductor device of the present invention can be manufactured.

本発明によれば、半導体装置の光学的特性を向上させることができる。   According to the present invention, the optical characteristics of a semiconductor device can be improved.

（ａ）は本発明の第１の実施形態に係る半導体装置の断面図であり、（ｂ）はその上面図である。(A) is sectional drawing of the semiconductor device which concerns on the 1st Embodiment of this invention, (b) is the top view. （ａ）〜（ｅ）は本発明の第１の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。(A)-(e) is sectional drawing which shows the manufacturing method of the semiconductor device which concerns on the 1st Embodiment of this invention in process order. （ａ）は本発明の第１の実施形態の変形例に係る半導体装置の断面図であり、（ｂ）はその上面図である。(A) is sectional drawing of the semiconductor device which concerns on the modification of the 1st Embodiment of this invention, (b) is the top view. 従来の半導体装置の断面図である。It is sectional drawing of the conventional semiconductor device.

以下、本発明の実施形態を図面に基づいて詳細に説明する。なお、本発明は、以下に示す実施形態に限定されない。例えば、半導体装置の構成部材の材料は、以下に示す材料に限定されない。また、図を明りょうにするために、図面における構成部材の形状は実際の半導体装置の構成部材の形状とは異なり、図面における構成部材の個数は実際の半導体装置の構成部材の個数とは異なる。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to embodiment shown below. For example, the material of the constituent member of the semiconductor device is not limited to the following materials. For the sake of clarity, the shape of the constituent members in the drawing is different from the shape of the actual constituent members of the semiconductor device, and the number of constituent members in the drawing is different from the number of the constituent members of the actual semiconductor device. .

《発明の実施形態１》
図１（ａ）は第１の実施形態に係る半導体装置の断面図であり、図１（ｂ）はその上面図である。 Embodiment 1 of the Invention
FIG. 1A is a cross-sectional view of the semiconductor device according to the first embodiment, and FIG. 1B is a top view thereof.

本実施形態に係る半導体装置は、第１透明部材１、第２透明部材２、パッケージ３、半導体素子４、Ａｕワイヤー（導電性細線）５、透明接着剤６及び接続端子７を備えている。   The semiconductor device according to this embodiment includes a first transparent member 1, a second transparent member 2, a package 3, a semiconductor element 4, an Au wire (conductive thin wire) 5, a transparent adhesive 6, and a connection terminal 7.

パッケージ３は、基板と、リブと、基板とリブとで囲まれたキャビティ部を有している。キャビティ部は、相対的に小さな下側キャビティ部と相対的に大きな上側キャビティ部とを有しており、下側キャビティ部の上面と上側キャビティ部の下面とが互いに連通されて形成されている。下側キャビティ部の底面上（別の言い方をすると、基板の上面上）には、例えばＡｇペースト又はＬＥテープなどを介して半導体素子４が固定されている。上側キャビティ部の底面上には、複数の接続端子７が設けられている。   The package 3 has a substrate, a rib, and a cavity portion surrounded by the substrate and the rib. The cavity part has a relatively small lower cavity part and a relatively large upper cavity part, and the upper surface of the lower cavity part and the lower surface of the upper cavity part are communicated with each other. On the bottom surface of the lower cavity portion (in other words, on the upper surface of the substrate), the semiconductor element 4 is fixed via, for example, Ag paste or LE tape. A plurality of connection terminals 7 are provided on the bottom surface of the upper cavity portion.

半導体素子４は、例えば、シリコン、III−V族化合物半導体又はII−VI族化合物半導体からなれば良い。半導体素子の材料としてIII−V族化合物半導体又はII−VI族化合物半導体を選択すれば、本実施形態に係る半導体装置を半導体レーザー又は発光ダイオードへ適用させることができる。   The semiconductor element 4 may be made of, for example, silicon, a III-V group compound semiconductor, or a II-VI group compound semiconductor. If a group III-V compound semiconductor or a group II-VI compound semiconductor is selected as the material of the semiconductor element, the semiconductor device according to this embodiment can be applied to a semiconductor laser or a light emitting diode.

半導体素子４の上面の中央には、受発光領域（不図示）が形成されている。受発光領域は光を受光又は発光する光学領域であり、この受発光領域における画素上にマイクロレンズが形成されていても良い。半導体素子４の上面のうち受発光領域よりも周縁には周辺回路領域（不図示）が形成されている。周辺回路領域には複数の電極端子（不図示）が設けられており、各電極端子はＡｕワイヤー（導電性細線）５を介してパッケージ３の接続端子７に電気的に接続されている。   A light emitting / receiving region (not shown) is formed at the center of the upper surface of the semiconductor element 4. The light emitting / receiving area is an optical area that receives or emits light, and a microlens may be formed on a pixel in the light emitting / receiving area. A peripheral circuit region (not shown) is formed on the upper surface of the semiconductor element 4 on the periphery of the light emitting / receiving region. A plurality of electrode terminals (not shown) are provided in the peripheral circuit region, and each electrode terminal is electrically connected to a connection terminal 7 of the package 3 through an Au wire (conductive thin wire) 5.

半導体素子４の受発光領域には、透明接着剤６を介して第１透明部材１が接着されている。受発光領域にマイクロレンズが形成されている場合には、第１透明部材１は透明接着剤６を介してマイクロレンズに接着されていればよい。このように半導体素子４の受発光領域に第１透明部材１が接着されているので、半導体装置への入射光の集光効率を向上させることができる。また、半導体装置の小型化を実現することができる。   The first transparent member 1 is bonded to the light emitting / receiving region of the semiconductor element 4 via the transparent adhesive 6. In the case where a microlens is formed in the light receiving / emitting region, the first transparent member 1 may be bonded to the microlens via the transparent adhesive 6. Thus, since the 1st transparent member 1 is adhere | attached on the light emitting / receiving area | region of the semiconductor element 4, the condensing efficiency of the incident light to a semiconductor device can be improved. In addition, the semiconductor device can be reduced in size.

第１透明部材１の上面には、透明接着剤６を介して第２透明部材２が接着されている。第２透明部材２は、パッケージ３のリブの上面に接着されていても良いし、パッケージ３のリブの上面と面一となるようにキャビティ部内に配置されていても良い。第２透明部材２がパッケージ３のリブの上面に接着されている場合には、図１（ａ）に示すように、第２透明部材２は透明接着剤６を介してパッケージ３のリブの上面に接着されていることが好ましい。   A second transparent member 2 is bonded to the upper surface of the first transparent member 1 via a transparent adhesive 6. The second transparent member 2 may be bonded to the upper surface of the rib of the package 3, or may be disposed in the cavity portion so as to be flush with the upper surface of the rib of the package 3. When the second transparent member 2 is bonded to the upper surface of the rib of the package 3, the second transparent member 2 is attached to the upper surface of the rib of the package 3 via the transparent adhesive 6 as shown in FIG. It is preferable that it is adhered to.

透明接着剤６は、光学的に透明であり、半導体素子４の受発光領域上に形成されたマイクロレンズよりも屈折率が低く、且つ、紫外線及び熱の少なくとも一方の照射により硬化すればよい。透明接着剤６は、アクリル系樹脂であっても良く、可視光を吸収しないように樹脂が配合されたエポキシ系樹脂又はポリイミド系樹脂であっても良い。   The transparent adhesive 6 is optically transparent, has a refractive index lower than that of the microlens formed on the light receiving / emitting region of the semiconductor element 4, and may be cured by irradiation with at least one of ultraviolet rays and heat. The transparent adhesive 6 may be an acrylic resin or an epoxy resin or a polyimide resin in which a resin is blended so as not to absorb visible light.

以下では、第１透明部材１及び第２透明部材２を説明する。   Below, the 1st transparent member 1 and the 2nd transparent member 2 are demonstrated.

第１透明部材１は、半導体素子４の受発光領域全体を覆うことができる大きさを有していればよい。第１透明部材１では、上面が下面に対して平行であり、側面が上面及び下面に対して垂直である。第１透明部材１の上面及び下面は光学的平面に加工されており、第１透明部材１の側面は矩形状の投影面を有している。   The first transparent member 1 only needs to have a size that can cover the entire light emitting / receiving region of the semiconductor element 4. In the first transparent member 1, the upper surface is parallel to the lower surface, and the side surfaces are perpendicular to the upper and lower surfaces. The upper surface and the lower surface of the first transparent member 1 are processed into an optical plane, and the side surface of the first transparent member 1 has a rectangular projection surface.

第２透明部材２では、第１透明部材１と同じく、上面は光学的平面に加工されており、下面は上面に対して平行であり且つ光学的平面に加工されており、側面は上面及び下面に対して垂直であり矩形状の投影面を有している。   In the second transparent member 2, as with the first transparent member 1, the upper surface is processed into an optical plane, the lower surface is parallel to the upper surface and processed into an optical plane, and the side surfaces are the upper surface and the lower surface. And has a rectangular projection surface.

第２透明部材２は、平面視において第１透明部材１よりも大きいことが好ましい。これにより、パッケージ３の接続端子７、半導体素子４の電極端子及びＡｕワイヤー５が外界に曝されることを防止できる。   The second transparent member 2 is preferably larger than the first transparent member 1 in plan view. Thereby, the connection terminal 7 of the package 3, the electrode terminal of the semiconductor element 4, and the Au wire 5 can be prevented from being exposed to the outside.

第２透明部材２の下面は、第１透明部材１の上面よりも大きいことが好ましい。これにより、第２透明部材２を第１透明部材１の上面に強固に接着させることができる。さらに、第２透明部材２の下面の周縁部分がパッケージ３のリブの上面に接着されていることが好ましい。これにより、第２透明部材２をパッケージ３に強固に固定することができる。以上より、半導体装置に外力が加わった場合であっても、第２透明部材２が第１透明部材１の上面又はパッケージ３のリブの上面から剥がれることを防止できる。一方、第２透明部材２は、平面視において、パッケージ３の外形の大きさ以下であることが好ましい。これにより、半導体装置の大型化を防止することができる。   The lower surface of the second transparent member 2 is preferably larger than the upper surface of the first transparent member 1. Thereby, the second transparent member 2 can be firmly bonded to the upper surface of the first transparent member 1. Furthermore, it is preferable that the peripheral portion of the lower surface of the second transparent member 2 is bonded to the upper surface of the rib of the package 3. Thereby, the second transparent member 2 can be firmly fixed to the package 3. As described above, even when an external force is applied to the semiconductor device, it is possible to prevent the second transparent member 2 from being peeled off from the upper surface of the first transparent member 1 or the upper surface of the rib of the package 3. On the other hand, it is preferable that the 2nd transparent member 2 is below the magnitude | size of the external shape of the package 3 in planar view. Thereby, the enlargement of the semiconductor device can be prevented.

このような第１透明部材１と第２透明部材２とは互いに同一の材料からなる。第１透明部材１及び第２透明部材２は、例えば、硼珪酸ガラス板、透明のエポキシ系樹脂板、アクリル系樹脂板または透明アルミナ板であっても良い。第１透明部材１及び第２透明部材２は、複屈折特性をもつ水晶板もしくは方解石板からなるローパスフィルタであっても良い。これにより、特定方向の干渉縞によるモワレを防止することができる。第１透明部材１及び第２透明部材２は、赤外線カットフィルタの両側に複屈折特性が直交するように石英板もしくは方解石板が赤外線カットフィルタの両側に貼り合わされたローパスフィルタであっても良い。   The first transparent member 1 and the second transparent member 2 are made of the same material. The first transparent member 1 and the second transparent member 2 may be, for example, a borosilicate glass plate, a transparent epoxy resin plate, an acrylic resin plate, or a transparent alumina plate. The first transparent member 1 and the second transparent member 2 may be a low-pass filter made of a quartz plate or a calcite plate having birefringence characteristics. Thereby, the moire by the interference fringe of a specific direction can be prevented. The first transparent member 1 and the second transparent member 2 may be low-pass filters in which a quartz plate or a calcite plate is bonded to both sides of the infrared cut filter so that birefringence characteristics are orthogonal to both sides of the infrared cut filter.

このように本実施形態に係る半導体装置は第１透明部材１とは別に第２透明部材２を備えているので、本実施形態に係る半導体装置には従来の半導体装置における透明部材の厚みよりも厚い透明部材が設けられている。第１透明部材１の厚みと第２透明部材２の厚みとの合計を例えば０．９ｍｍ以上とすることができる。よって、強度の強い光（迷光）が本実施形態に係る半導体装置に入射して第２透明部材２と空気との界面において反射しても、その光が半導体素子４へ入射されることを防止できる。従って、半導体素子４の受発光領域に第１透明部材１を接着させたことに起因するフレアの発生を防止することができる。   As described above, since the semiconductor device according to the present embodiment includes the second transparent member 2 in addition to the first transparent member 1, the semiconductor device according to the present embodiment has a thickness larger than that of the transparent member in the conventional semiconductor device. A thick transparent member is provided. The sum total of the thickness of the 1st transparent member 1 and the thickness of the 2nd transparent member 2 can be 0.9 mm or more, for example. Therefore, even if strong light (stray light) enters the semiconductor device according to the present embodiment and is reflected at the interface between the second transparent member 2 and air, the light is prevented from entering the semiconductor element 4. it can. Therefore, it is possible to prevent the occurrence of flare due to the first transparent member 1 being adhered to the light emitting / receiving region of the semiconductor element 4.

なお、第２透明部材２の厚みは、第１透明部材１の厚みと同一であっても良いし、第１透明部材１の厚みとは異なっていても良い。第１透明部材１の厚みと第２透明部材２の厚みとの合計が０．９ｍｍ以上であれば良い。   The thickness of the second transparent member 2 may be the same as the thickness of the first transparent member 1 or may be different from the thickness of the first transparent member 1. The sum total of the thickness of the 1st transparent member 1 and the thickness of the 2nd transparent member 2 should just be 0.9 mm or more.

図２（ａ）〜（ｅ）は、本実施形態に係る半導体装置の製造方法を示す断面図である。   2A to 2E are cross-sectional views illustrating a method for manufacturing a semiconductor device according to this embodiment.

まず、図２（ａ）に示すように、パッケージ３を準備する。パッケージ３は、上述のように、基板と、リブと、基板とリブとで囲まれたキャビティ部とを有しており、さらに接続端子７を上側キャビティ部の底面に有している。   First, as shown in FIG. 2A, a package 3 is prepared. As described above, the package 3 has a substrate, a rib, and a cavity portion surrounded by the substrate and the rib, and further has a connection terminal 7 on the bottom surface of the upper cavity portion.

次に、図２（ｂ）に示すように、Ａｇペースト又はＬＥテープなどを介してパッケージ３の下側キャビティ部の底面上に半導体素子４を固定し、透明接着剤６を介して半導体素子４の受発光領域に第１透明部材１を接着させる。このとき、パッケージ３の下側キャビティ部の底面上（別の言い方をすると、基板の上面上）に半導体素子４を固定してから半導体素子４の受発光領域に第１透明部材１を接着させても良いし、半導体素子４の受発光領域に第１透明部材１が接着されたものを半導体素子４が第１透明部材１よりも下に位置するようにしてパッケージ３の下側キャビティ部の底面上に固定しても良い。前者の方法よりも後者の方法を選択することが好ましい。   Next, as shown in FIG. 2B, the semiconductor element 4 is fixed on the bottom surface of the lower cavity portion of the package 3 via Ag paste or LE tape, and the semiconductor element 4 is interposed via the transparent adhesive 6. The first transparent member 1 is bonded to the light emitting / receiving region. At this time, after fixing the semiconductor element 4 on the bottom surface of the lower cavity portion of the package 3 (in other words, on the upper surface of the substrate), the first transparent member 1 is adhered to the light emitting / receiving region of the semiconductor element 4. Alternatively, the first transparent member 1 bonded to the light emitting / receiving region of the semiconductor element 4 may be disposed below the first transparent member 1 so that the semiconductor element 4 is positioned below the first transparent member 1. It may be fixed on the bottom surface. It is preferable to select the latter method over the former method.

続いて、図２（ｃ）に示すように、Ａｕワイヤー５を介して半導体素子４の周辺回路領域に設けられた電極端子とパッケージ３の接続端子７とを電気的に接続させる。   Subsequently, as illustrated in FIG. 2C, the electrode terminals provided in the peripheral circuit region of the semiconductor element 4 and the connection terminals 7 of the package 3 are electrically connected via the Au wire 5.

続いて、図２（ｄ）に示すように、塗布ノズル８を用いて透明接着剤６を第１透明部材１の上面上に塗布する。   Subsequently, as shown in FIG. 2D, the transparent adhesive 6 is applied on the upper surface of the first transparent member 1 using the application nozzle 8.

その後、図２（ｅ）に示すように、透明接着剤６を介して第１透明部材１の上面に第２透明部材２を接着させる。このようにして、本実施形態に係る半導体装置を製造することができる。   Thereafter, as shown in FIG. 2 (e), the second transparent member 2 is bonded to the upper surface of the first transparent member 1 through the transparent adhesive 6. In this way, the semiconductor device according to this embodiment can be manufactured.

以上説明したように、本実施形態では、半導体装置への入射光の集光効率の向上を図りつつ、半導体素子４の受発光領域に第１透明部材１を接着させたことに起因するフレアの発生を防止することができる。よって、半導体装置の光学性能の低下を抑制することができる。   As described above, in the present embodiment, flare caused by bonding the first transparent member 1 to the light emitting / receiving region of the semiconductor element 4 while improving the collection efficiency of incident light to the semiconductor device is improved. Occurrence can be prevented. Therefore, it is possible to suppress a decrease in the optical performance of the semiconductor device.

さらに、本実施形態では、半導体装置の小型化を図ることができる。   Furthermore, in this embodiment, the semiconductor device can be reduced in size.

その上、半導体素子４の電極端子、Ａｕワイヤー５及びパッケージ３の接続端子７が外界に曝されることを防止することができる。それだけでなく、第２透明部材２を第１透明部材１の上面上又はパッケージ３のリブの上面上に強固に固定することができるので、本実施形態に係る半導体装置に外力が加わった場合であっても第２透明部材２が半導体装置から剥がれてしまうことを防止できる。   In addition, it is possible to prevent the electrode terminal of the semiconductor element 4, the Au wire 5, and the connection terminal 7 of the package 3 from being exposed to the outside world. In addition, since the second transparent member 2 can be firmly fixed on the upper surface of the first transparent member 1 or the upper surface of the rib of the package 3, when an external force is applied to the semiconductor device according to the present embodiment. Even if it exists, it can prevent that the 2nd transparent member 2 peels from a semiconductor device.

なお、本実施形態における第１透明部材は以下の変形例における第１透明部材であっても良い。   In addition, the 1st transparent member in this embodiment may be the 1st transparent member in the following modifications.

（変形例）
図３（ａ）は上記実施形態１の変形例に係る半導体装置の断面図であり、図３（ｂ）はその上面図である。本変形例に係る半導体装置では、第１透明部材１１の下面はその上面よりも小さい。それ以外の点については、上記実施形態１と同じである。以下では、上記実施形態１とは異なる点について重点的に説明する。 (Modification)
FIG. 3A is a cross-sectional view of a semiconductor device according to a modification of the first embodiment, and FIG. 3B is a top view thereof. In the semiconductor device according to this modification, the lower surface of the first transparent member 11 is smaller than the upper surface. Other points are the same as those in the first embodiment. Hereinafter, points different from the first embodiment will be mainly described.

本変形例における第１透明部材１１の下面はその上面よりも小さい。具体的には、本変形例における第１透明部材１１は、下面が上面よりも小さくなるようにテーパー状に形成されている。これにより、第１透明部材１１の側面から入射された光（迷光）が半導体素子４の受発光領域に入射されることを防止することができる。このように、本変形例では、上記実施形態１において得られる効果に加えて、第１透明部材１１の側面から入射された光（迷光）が半導体素子４の受発光領域に入射されることを防止することができるという効果を得ることができる。   The lower surface of the 1st transparent member 11 in this modification is smaller than the upper surface. Specifically, the first transparent member 11 in the present modification is formed in a tapered shape so that the lower surface is smaller than the upper surface. Thereby, it is possible to prevent light (stray light) incident from the side surface of the first transparent member 11 from entering the light receiving and emitting region of the semiconductor element 4. As described above, in this modification, in addition to the effects obtained in the first embodiment, the light (stray light) incident from the side surface of the first transparent member 11 is incident on the light receiving / emitting region of the semiconductor element 4. The effect that it can prevent can be acquired.

《その他の実施形態》
上記実施形態１及び上記変形例は、以下に示す構成を有していても良い。 << Other Embodiments >>
The said Embodiment 1 and the said modification may have the structure shown below.

パッケージの接続端子、半導体素子の電極端子及びＡｕワイヤーが絶縁性の樹脂で被覆されていても良い。具体的には、パッケージのキャビティ部が絶縁性の樹脂で充填されていれば良い。これにより、電気的な接続部分を絶縁材料で覆うことができる。よって、半導体装置の耐候性を向上させることができる、つまり、半導体装置の外部環境が変化しても半導体装置の性能を維持することができる。ここで、絶縁性の樹脂としては、エポキシ樹脂、シリコーン樹脂又はアクリル樹脂などを挙げることができる。   The connection terminal of the package, the electrode terminal of the semiconductor element, and the Au wire may be covered with an insulating resin. Specifically, it is only necessary that the cavity of the package is filled with an insulating resin. Thereby, an electrical connection part can be covered with an insulating material. Therefore, the weather resistance of the semiconductor device can be improved, that is, the performance of the semiconductor device can be maintained even when the external environment of the semiconductor device changes. Here, examples of the insulating resin include an epoxy resin, a silicone resin, and an acrylic resin.

第１透明部材の側面に遮光処理が施されていても良い。これにより、迷光が第１透明部材の側面から入射されることを防止できるので、半導体素子へ迷光が入射されることを防止することができる。   A light shielding treatment may be applied to the side surface of the first transparent member. Thereby, since stray light can be prevented from entering from the side surface of the first transparent member, stray light can be prevented from entering the semiconductor element.

第１透明部材の側面は矩形状の投影面を有しているとしたが、その投影面は矩形のコーナー部が切り落とされた形状を有していても良い。さらに、第１透明部材の上面及び下面の少なくとも一方の面のエッジには、面取り加工が施されていても良い。これらのことは第２透明部材についても言える。   Although the side surface of the first transparent member has a rectangular projection surface, the projection surface may have a shape in which a rectangular corner portion is cut off. Further, the edge of at least one of the upper surface and the lower surface of the first transparent member may be chamfered. These also apply to the second transparent member.

半導体素子が固定される部材の一例としてパッケージを挙げたが、単なる基板であっても良い。つまり、上記実施形態及び上記変形例に係る半導体装置はリブを備えていなくても良い。   Although a package has been described as an example of a member to which a semiconductor element is fixed, a simple substrate may be used. That is, the semiconductor device according to the embodiment and the modification may not include a rib.

上記実施形態１及び上記変形例に係る半導体装置を用いてカメラモジュール又は医療用の内視鏡モジュールを構成することができる。   A camera module or a medical endoscope module can be configured using the semiconductor device according to the first embodiment and the modification.

以上説明したように、本発明は、携帯電話及びデジタルカメラなどのイメージセンサを備えた半導体装置等に有用である。   As described above, the present invention is useful for a semiconductor device or the like provided with an image sensor such as a mobile phone and a digital camera.

１，１１ 第１透明部材
２ 第２透明部材
３ パッケージ
４ 半導体素子
５ Ａｕワイヤー
６ 透明接着剤
７ 接続端子 1,11 1st transparent member
2 Second transparent member
3 packages
4 Semiconductor elements
5 Au wire
6 Transparent adhesive
7 Connection terminal

Claims (6)

基板と、
前記基板の上面上に設けられ、受光領域及び発光領域の少なくとも一方として機能する光学領域を上面に有する半導体素子と、
前記基板と前記半導体素子とを電気的に接続する導電性細線と、
透明接着剤を介して前記半導体素子の前記光学領域に接着された第１透明部材と、
前記透明接着剤を介して前記第１透明部材の上面に接着された第２透明部材とを備え、
前記第１透明部材と前記第２透明部材とは互いに同一の材料からなる半導体装置。 A substrate,
A semiconductor element provided on the upper surface of the substrate and having an optical region on the upper surface that functions as at least one of a light receiving region and a light emitting region;
A conductive thin wire electrically connecting the substrate and the semiconductor element;
A first transparent member bonded to the optical region of the semiconductor element via a transparent adhesive;
A second transparent member bonded to the upper surface of the first transparent member via the transparent adhesive,
The first transparent member and the second transparent member are semiconductor devices made of the same material. 請求項１に記載の半導体装置において、
前記第２透明部材は、平面視において、前記第１透明部材よりも大きい半導体装置。 The semiconductor device according to claim 1,
The second transparent member is a semiconductor device larger than the first transparent member in plan view. 請求項１又は２に記載の半導体装置において、
前記第１透明部材は、下面が前記上面よりも小さくなるようにテーパー状に形成されている半導体装置。 The semiconductor device according to claim 1 or 2,
The first transparent member is a semiconductor device formed in a tapered shape so that a lower surface is smaller than the upper surface. 請求項１から３の何れか一つに記載の半導体装置において、
前記第２透明部材の下面は、前記第１透明部材の前記上面よりも大きい半導体装置。 The semiconductor device according to any one of claims 1 to 3,
A semiconductor device in which a lower surface of the second transparent member is larger than the upper surface of the first transparent member. 請求項１から４の何れか一つに記載の半導体装置において、
前記基板の前記上面上には、複数の接続端子が設けられており、
前記半導体素子の前記上面上のうち前記光学領域よりも周縁には、複数の電極端子が設けられており、
前記接続端子は、前記導電性細線を介して前記電極端子に接続されており、
前記接続端子、前記電極端子及び前記導電性細線は樹脂により封止されている半導体装置。 The semiconductor device according to any one of claims 1 to 4,
A plurality of connection terminals are provided on the upper surface of the substrate,
A plurality of electrode terminals are provided on the periphery of the upper surface of the semiconductor element from the optical region,
The connection terminal is connected to the electrode terminal through the conductive thin wire,
The semiconductor device in which the connection terminal, the electrode terminal, and the conductive thin wire are sealed with resin. 基板の上面上に、受光領域及び発光領域の少なくとも一方として機能する光学領域を上面に有する半導体素子を固定する工程と、
前記基板と前記半導体素子とを電気的に接続する工程と、
前記半導体素子の前記光学領域に、第１透明部材を接着する工程と、
前記第１透明部材の上面に、第２透明部材を接着する工程とを備えている半導体装置の製造方法。 Fixing a semiconductor element having an optical region functioning as at least one of a light receiving region and a light emitting region on the upper surface of the substrate;
Electrically connecting the substrate and the semiconductor element;
Adhering a first transparent member to the optical region of the semiconductor element;
And a step of bonding a second transparent member to the upper surface of the first transparent member.
JP2009122961A 2009-05-21 2009-05-21 Semiconductor device and method for manufacturing the same Pending JP2010273087A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067898A (en) * 2012-09-26 2014-04-17 Aoi Electronics Co Ltd Semiconductor device and manufacturing method of the same
US10069053B2 (en) 2013-09-30 2018-09-04 Nichia Corporation Light emitting device having wire including stack structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067898A (en) * 2012-09-26 2014-04-17 Aoi Electronics Co Ltd Semiconductor device and manufacturing method of the same
US10069053B2 (en) 2013-09-30 2018-09-04 Nichia Corporation Light emitting device having wire including stack structure

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