JP2009123788A - Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and photographic apparatus using the same solid-state imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus which prevents darkening of incident light on a peripheral portion of a solid-state image sensor, prevents stray light incident on an effective pixel region of the solid-state image sensor, and further has high reliability, to provide a method of manufacturing the solid-state imaging apparatus, and to provide a photographic device having the solid-state imaging apparatus. <P>SOLUTION: The solid-state imaging apparatus 10 has a sensor chip 2 where the effective pixel region is formed, a transparent substrate 4 disposed opposite the effective pixel region of the sensor chip 2, a sealing resin 5 sealing a portion of the sensor chip 2 and a sidewall of the transparent substrate 4, and a lens 3 formed of a transparent resin. The lens 3 is formed on the transparent substrate 4 to have an outer periphery of the lens 3 more closely to the center of an optical axis than to an outer periphery of the transparent substrate 4 when viewed in the optical axis direction of the lens 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device that captures an image of a subject using a solid-state imaging device on which a light-receiving element is formed, a method for manufacturing the solid-state imaging device, and an imaging device including the solid-state imaging device. More specifically, the present invention relates to a solid-state imaging device used for a camera such as a digital camera or a video camera, a manufacturing method of the solid-state imaging device, and an imaging device including the solid-state imaging device.

  An imaging device such as a digital camera or a video camera converts light from a subject into an electrical signal, and forms image data of the subject based on the electrical signal. The imaging apparatus includes an imaging unit (solid-state imaging device) that recognizes light from a subject imaged by an imaging lens.

  The light recognized by the solid-state imaging device is converted into an electrical signal by a solid-state imaging device inside the solid-state imaging device and output as the electrical signal. Based on the output electrical signal, an image of the subject is formed in the processing unit of the photographing apparatus.

  As a conventional configuration of the solid-state imaging device as described above, a configuration in which the solid-state imaging device is housed in a unit case provided with a parallel flat plate-like protective glass can be exemplified. The protective glass prevents entry of foreign matter (dust, dust, etc.) into the unit case and contact of other members with the solid-state imaging device in the manufacturing process of the solid-state imaging device without preventing light from entering. In other words, the protective glass is a member that protects the solid-state image sensor from adverse effects on the solid-state image sensor (attachment of foreign matter or damage to the element due to physical causes).

  An angle of light incident on the solid-state imaging device when the solid-state imaging device having the above-described configuration is applied to an imaging device will be described with reference to FIG.

  As shown in FIG. 10, light that has passed through an imaging lens (not shown) reaches the solid-state imaging device 102 through the protective glass 101. An imaginary line O-O ′ represents the central axis of the light transmitted through the imaging lens.

  Of the light incident on the solid-state imaging device 102, the light incident on a position away from the virtual line O-O 'has an angle that spreads outward from the virtual line O-O'. When light enters the protective glass 101, it is refracted inward, but when emitted from the protective glass 101, it is emitted as light parallel to the incident light on the protective glass 101. That is, light that has an angle away from the imaginary line O-O ′ enters the solid-state image sensor 102 as it is located outside the solid-state image sensor 102.

  If the incident light has an angle that leaves the imaginary line OO ′ to the outside, the incident efficiency to the solid-state imaging device 102 is lowered, and thus it is difficult to efficiently convert the light into an electric signal. Become.

  When a solid-state imaging device having a parallel flat plate-like protective glass as described above is applied to an imaging device, and the solid-state imaging device is reduced in size and thickness, the light transmitted through the imaging lens is inevitably widened. To do. Due to the widening of the light, the difference in incident efficiency between the central portion and the peripheral portion of the solid-state imaging device is further enlarged, and thus there arises a problem that the peripheral portion becomes extremely dark when the formed image is viewed.

  When a transparent plane-parallel plate-like member is used as a protective member for a solid-state imaging device, the following problems occur in addition to the above problems.

  CCD (charge coupled device) and CMOS (Complementary Metal Oxide Semiconductor) devices, which are often used as solid-state imaging devices, can convert light having a relatively wide wavelength into electrical signals. For example, a CCD or C-MOS device can convert light having a wavelength in the near infrared region (750 to 2500 nm) as well as the visible light region into an electrical signal.

  However, when used as a normal camera, it is not meaningless for the solid-state imaging device to convert near-infrared light into an electrical signal, but it also causes deterioration in image quality such as a decrease in resolution and image unevenness. For this reason, normally, near-infrared rays are cut out of incident light by inserting colored glass or the like as an infrared cut filter into an optical system such as a video camera. 2. Description of the Related Art In recent years, in order to reduce the cost and size of an apparatus, a method of cutting (reflecting) near infrared rays by forming an inexpensive dielectric multilayer film as an infrared cut filter on a protective glass has been adopted.

  Here, the dielectric multilayer film has an angle dependency in which the range of the wavelength of the reflected light changes depending on the angle of the incident light. As the incident angle of light increases, the wavelength range of light that can be reflected by the dielectric multilayer film shifts to a shorter wavelength. That is, the larger the incident angle of light, the more easily the dielectric multilayer film reflects light having a shorter wavelength than that of near infrared rays. In other words, the larger the incident angle of light, the lower the function of the dielectric multilayer film as an infrared cut filter.

  For this reason, the image formed based on the electrical signal converted by the solid-state imaging device becomes bluish as it goes from the center to the periphery. Accordingly, it is impossible to sufficiently prevent deterioration in image quality such as a decrease in resolution and image unevenness.

  In order to solve the above-described problem of deterioration in image quality in the peripheral portion of an image, an image sensor unit (solid-state imaging device) in which a lens is formed on the upper part of a protective glass is disclosed in Patent Document 1. Patent Document 2 discloses a method for manufacturing a dielectric multilayer filter having a resin focusing lens and a solid-state imaging device (solid-state imaging device).

  The solid-state imaging device disclosed in Patent Document 1 will be described with reference to FIG. 11 and the solid-state imaging device disclosed in Patent Document 2 and the method for manufacturing the dielectric multilayer filter will be described with reference to FIGS.

  As illustrated in FIG. 11, the solid-state imaging device disclosed in Patent Document 1 protects the unit case 112, the sensor chip 114 disposed in the unit case 112, the lens unit 116 formed on the sensor chip 114, and the sensor chip 114. Protective glass 115 is provided. On the light incident surface side of the solid-state imaging device, there are provided a crystal filter 111 for splitting a light beam into two by birefringence of crystal and an imaging lens 110 for imaging light from a subject. An imaginary line O represents the central axis of light incident from the imaging lens 110.

  Here, the lens unit 116 includes one microlens 116 a formed for each of a plurality of light receiving pixels constituting the sensor chip 114. The protective glass 115 includes a flat glass plate 115a and a lens portion 115b, and the glass plate 115a and the lens portion 115b are integrally formed. The lens portion 115b is formed on the light incident surface side of the glass plate 115a. The lens portion 115b formed on the protective glass 115 has an afocal lens function that does not have an imaging function.

  Since the solid-state imaging device of Patent Document 1 includes the lens portion 115b, the light incident on the peripheral portion of the sensor chip 114 is refracted so as to be substantially parallel to the virtual line O. Therefore, it is possible to suppress a decrease in light incident efficiency in the peripheral portion of the sensor chip 114 and achieve uniformity of the entire obtained image.

  As shown in FIG. 12, the solid-state imaging device 130 of Patent Literature 2 includes a unit case 136, a sensor chip 135 disposed in the unit case 136, and a dielectric multilayer filter formed on the sensor chip 135. 131 is provided. The dielectric multilayer filter 131 includes a light transmissive substrate 134 that protects the sensor chip 135, a dielectric multilayer film 133 formed on a flat surface of the light transmissive substrate 134, and a resin focusing lens 132.

  An optical system 140 for imaging light from a subject is provided on the light incident surface side of the solid-state imaging device 130. An arrow L0 indicates a path of light incident on the center of the sensor chip 135, and an arrow L2 indicates a path of light incident near the outer periphery of the sensor chip 135.

  The light traveling on the arrow L2 is refracted so as to be more parallel to the arrow L0 on the light incident surface of the resin focusing lens 132. Therefore, the light emitted from the resin focusing lens 132 and incident on the dielectric multilayer film 133 is nearly parallel to the light traveling on the arrow L0 as compared to before entering the resin focusing lens 132. That is, even the light incident near the outer periphery of the solid-state imaging device 130 can be incident on the dielectric multilayer film 133 at a relatively vertical angle because the resin focusing lens 132 is provided.

  For this reason, the solid-state imaging device 130 can cut unnecessary infrared rays by appropriately correcting the angle of light incident near the outer periphery thereof. As a result, it is possible to prevent a decrease in resolution and color unevenness of the entire image.

  Furthermore, as shown in FIG. 13, the method for manufacturing the dielectric multilayer filter of Patent Document 2 shown in FIG. 12 includes manufacturing processes such as S101 to S105.

  As shown in FIG. 13, first, a large-area light-transmitting substrate 134 and a convex mold 137 are prepared (S101). A dielectric multilayer film 133 is formed in advance on one surface of the large-area light-transmitting substrate 134. The convex mold 137 has a concave cavity 137a for transferring the convex surface of the resin focusing lens 132 and a flat forming surface 137b.

  Next, the large area light transmissive substrate 134 and the convex mold 137 are overlapped. At this time, the photo-curing resin 138 is filled before or after the light-transmitting substrate 134 and the convex mold 137 are overlaid. Then, the photocurable resin 138 is cured by irradiating ultraviolet rays from the light transmitting substrate 134 side (S102).

  Next, the convex mold 137 is separated from the light transmissive substrate 134 after the ultraviolet irradiation (S103). Thereby, a light-transmitting substrate 134 (formed body) on which a plurality of resin focusing lenses 132 are formed can be manufactured.

  Next, the dielectric multilayer filter 131 in which the plurality of resin focusing lenses 132 are formed is cut along the cutting line 139 (S104). As a result, a plurality of dielectric multilayer filters 131 can be manufactured (S105).

  As described above, if the dielectric multilayer filter manufacturing method of Patent Document 2 is adopted, a plurality of dielectric multilayer filters 131 capable of efficiently cutting near-infrared rays regardless of the incident position of light can be obtained once. It can manufacture simply by the manufacturing process. Furthermore, since the lens is made of a photocurable resin, unlike the case where the lens is formed using glass, it is easy to mold the lens surface into a desired shape.

  Here, a camera module to be mounted on a camera-equipped mobile phone, a PDA (Personal Digital Assistant), or the like is increasingly required to be reduced in size and thickness in order to achieve reduction in size and thickness of the product itself.

  However, in the solid-state imaging device shown in FIGS. 11 and 12, the members (protective glass 115 and dielectric multilayer filter 131) for protecting the solid-state imaging device are formed larger than the planar size (size) of the solid-state imaging device. I have to. The reason for this will be described below.

  In order to capture an image of a subject using an imaging device, it is necessary to output an electrical signal obtained by converting light from the subject by a solid-state imaging device to a processing unit outside the solid-state imaging device. . Naturally, wiring is necessary for outputting electric signals. As this wiring, the solid-state imaging device and the processing unit are usually connected by a bonding wire. Since the bonding wires are connected so as to protrude outside the solid-state image sensor, the unit case needs to be formed sufficiently larger than the solid-state image sensor. As a result, since the protective glass 115 and the dielectric multilayer filter 131 must be enlarged, the solid-state imaging device and the solid-state imaging device as described above have a structure unsuitable for downsizing.

  Furthermore, in order to prevent the bonding wire from contacting the protective glass 115 and the dielectric multilayer filter 131, etc., it is necessary to form the unit case sufficiently high, so it is difficult to reduce the thickness of the solid-state imaging device as described above. is there.

  Here, Patent Document 3 discloses an imaging apparatus that can be easily reduced in size and thickness. The structure of the imaging device of Patent Document 3 will be described below with reference to FIG.

  As shown in FIG. 14, the imaging apparatus 150 of Patent Document 3 includes a wiring board 152 having a plurality of conductor wirings 161 formed on both sides, and a DSP (Digital Signal Processor) for image processing formed on the wiring board 152. 154, a solid-state imaging device 151 bonded to the DSP 154 via the spacer 153, a sealing resin 158 that seals a part of the wiring board 152 and the side surface of the solid-state imaging device 151, and a lens fixed on the sealing resin 158 A holder 162 and a lens 162 that is disposed to face the solid-state imaging device 151 and function as an optical path delimiter that demarcates an optical path to the solid-state imaging device 151 are provided. The sensor chip 156 and DSP 154 and the wiring board 152 are electrically connected via bonding wires 159.

  The solid-state imaging device 151 includes a sensor chip 156, a light-transmitting substrate 155 disposed so as to face the effective pixel region of the sensor chip 156, and an adhesive portion 157 that bonds the sensor chip 156 and the light-transmitting substrate 155. It is configured. A bonding wire 159 for electrically connecting the wiring board 152 and the sensor chip 156 is connected to the outside of the bonding portion 157. Further, an adhesive portion 157 is disposed along the effective pixel region on the sensor chip 156. In addition, the light-transmitting substrate 155 and the sensor chip 156 having a plane size smaller than the plane size of the sensor chip 156 are bonded via the bonding portion 157.

  Since the effective pixel region on the sensor chip 156 can be sealed using the light-transmitting substrate 155 having a small planar size, the light-transmitting substrate 155 is not interfered with the wired bonding wires 159. Therefore, the light transmissive substrate 155 can be disposed in the vicinity of the sensor chip 156.

That is, a space for avoiding contact between the bonding wire 159 and another member becomes unnecessary. The solid-state imaging device 151 can be reduced in size and thickness as much as it is not necessary to provide the space. As a result, the entire photographing apparatus can be easily reduced in size and thickness.
JP-A-11-97659 (published on April 9, 1999) JP 2005-234038 (published September 2, 2005) JP 2004-296453 (released on October 21, 2004)

  However, when the conventional solid-state imaging devices of Patent Literature 1 and Patent Literature 2 are applied to an imaging device, the following problems occur.

  That is, in the solid-state imaging devices of Patent Literature 1 and Patent Literature 2, the protective member (protective glass 115 or dielectric multilayer filter 131) on which a lens is formed covers the unit case. If the protective member is not attached so as to be parallel to the solid-state image sensor, the central axis of the light beam incident on the solid-state image sensor and the central axis of the lens do not coincide with each other, and the lens has a large angle (tilted). . The angular deviation between the two central axes enlarges the aberration of light incident on the solid-state image sensor, causing distortion and blurring of the formed image.

  In order to attach the protective member accurately, it is important that the shape of the unit case is formed with high accuracy. However, to increase the shape of the unit case with high accuracy, it is necessary to avoid an increase in cost in the manufacturing process. Can not.

  In addition, in the manufacturing method of the dielectric multilayer filter 131 of Patent Document 2, it is described that after the dielectric multilayer film 133 is formed on one or both surfaces of the light transmissive substrate 134, the resin focusing lens 132 is formed. ing.

  Usually, the dielectric multilayer film 133 is composed of 40 to 50 multilayer films. Therefore, when the dielectric multilayer film 133 is formed only on one surface of the light transmissive substrate 134, the film stress of the dielectric multilayer film 133 is reduced. As a result, the light transmitting substrate 134 is warped. When the resin focusing lens is formed on the light-transmitting substrate 134 with warping, the warp of the light transmitting substrate 134 is transmitted to the resin focusing lens, and in particular, the peripheral portion of the resin focusing lens is deformed. If the resin focusing lens is deformed, the incident angle of light cannot be properly corrected. Therefore, the deformation of the resin focusing lens greatly reduces the yield rate of products.

  For example, if the light transmissive substrate 134 on which the dielectric multilayer film 133 is formed before dicing the resin focusing lens, the film stress can be released (reduced to a negligible level). However, if dicing is performed first, the manufacturing process cannot be simplified and the cost can be reduced.

  In addition, when the dielectric multilayer film 133 is formed on both surfaces of the light transmissive substrate 134, the film stress of the dielectric multilayer film 133 formed on both surfaces cancels each other, so dicing is performed after the resin focusing lens is formed. You may go. However, when the dielectric multilayer film 133 is formed on the surface of the light transmissive substrate 134 that faces the sensor chip 135 that is a solid-state imaging device, the following problems occur.

  The dielectric multilayer film 133 has countless cracks that do not affect the function of reflecting infrared rays. Since the dielectric multilayer film 133 is easily affected by temperature changes, the cracks may expand with temperature changes caused by the manufacturing process or driving of the device after mounting. The expansion of the crack (the connection of a plurality of cracks) results in micro-peeling of the film that hardly affects the function of reflecting infrared rays. If a small piece from which fine delamination of the dielectric multilayer film 133 is attached on the effective pixel region, a stain is formed on the image.

  That is, when the dielectric multilayer film 133 is formed on both surfaces of the light transmissive substrate 134, the yield rate and long-term reliability of the solid-state imaging device are lowered. Furthermore, if the dielectric multilayer film 133 is formed on both surfaces of the light-transmitting substrate 134, it is a matter of course that the solid-state imaging device is prevented from being reduced in size and thickness.

  Here, when the technique described in Patent Document 1 or Patent Document 2 is applied to the solid-state imaging device 151 (see FIG. 14) of Patent Document 3, the complexity and cost of the work by manufacturing the unit case, and the minuteness of the dielectric multilayer film are reduced. At the same time as removing the peeling, the solid-state imaging device can be reduced in size and thickness.

That is, the problems of Patent Document 1 and Patent Document 2 can be solved for the following reasons (1) to (3).
(1) Since the light-transmitting substrate only needs to be slightly larger than the size of the effective pixel region, a space for avoiding contact between the bonding wire and another member becomes unnecessary.
(2) Since the light-transmitting substrate on which the lens is formed on the upper surface and the solid-state imaging device are fixed through a very thin adhesive portion, the central axis of the incident light and the central axis of the lens may be greatly inclined. Absent.
(3) Since a small light-transmitting substrate is used, the lens is not deformed by the film stress of the dielectric multilayer film.

  Here, considering that the technique described in Patent Literature 1 or Patent Literature 2 is applied to the solid-state imaging device 151 (see FIG. 14) of Patent Literature 3, the solid-state imaging device 151 ′ shown in FIG. It becomes imaging device 150 '.

  That is, as shown in FIG. 15A, the solid-state imaging device 151 ′ includes a resin lens 155 a that covers the light transmissive substrate 155.

  The resin lens 155a has the same surface shape as the light-transmitting substrate 155, and has almost the same surface shape as the effective pixel region of the sensor chip 156. The side walls of the resin lens 155a and the light transmissive substrate 155 form a flat surface. The reason why the side walls of the resin lens 155a and the light transmissive substrate 155 form a flat surface is that the resin lens 155a and the light transmissive substrate 155 are separated by dicing.

  With this configuration, the solid-state imaging device 151 ′ can achieve reduction in manufacturing cost and suppression of warping of the light-transmitting substrate 155.

  However, since the end portion of the resin lens 155a has a flat side wall, light is reflected on the side wall and is incident on the effective pixel region as stray light. That is, as shown in FIG. 15B, the light 170 incident near the end of the resin lens 155a enters the resin lens 155a as refracted light 170a refracted on the convex surface of the resin lens 155a. Here, the vicinity of the end portion of the resin lens 155a slightly protrudes outward from just above the effective pixel region in manufacturing. For this reason, the refracted light 170 a becomes reflected light 170 b reflected on the side wall of the end portion of the resin lens 155 a and the side wall of the light-transmitting substrate 155 exposed from the sealing resin 148. The reflected light 170b is incident on the effective pixel area as light unnecessary for image formation. As a result, there is a problem that the image quality of an image formed using the solid-state imaging device 151 'is deteriorated.

  Here, as described above, in the solid-state imaging device 151 ′, a part of the side wall of the light transmissive substrate 155 is exposed from the sealing resin 158. This is to prevent the sealing resin 158 from entering the upper surface of the light transmissive substrate 155.

  When the sensor chip 156 and the light-transmitting substrate 155 are sealed with resin, if the sealing resin 158 having an excessive amount of fluidity is filled, the sealing resin 158 easily enters the upper surface of the light-transmitting substrate 155. Therefore, the sealing resin 158 having fluidity is filled in a smaller amount than necessary for sealing the sensor chip 156, the light-transmitting substrate 155, and the like.

  As a result, a part of the side wall of the light transmissive substrate 155 is exposed from the sealing resin 158. In general, a portion of the side wall of the light transmissive substrate 155 having a height of about 50 to 100 μm from the upper surface of the light transmissive substrate 155 is exposed from the sealing resin 158.

  As described above, when the resin lens 155a is formed in the solid-state imaging device 151 of Patent Document 3, the light is reflected on the side wall of the light transmissive substrate 155 and the side wall of the end portion of the resin lens 155a to the effective pixel region. Incident stray light increases. In particular, in a solid-state imaging device that does not include the sealing resin 158, the entire side wall of the light-transmitting substrate 155 functions as a light reflecting surface, so that stray light incident on the effective pixel region further increases.

  The present invention has been made in view of the above-described conventional problems, and an object thereof is to suppress the incident light to the peripheral part of the solid-state image sensor from becoming dark and to enter the effective pixel region of the solid-state image sensor. An object of the present invention is to provide a solid-state imaging device capable of suppressing stray light to be generated and obtaining high reliability, a method for manufacturing the solid-state imaging device, and an imaging device including the solid-state imaging device.

  In order to solve the above problems, a solid-state imaging device of the present invention includes a solid-state imaging device in which an effective pixel region is formed, a transparent plate disposed to face the effective pixel region of the solid-state imaging device, and the solid A sealing resin for sealing a part of the image sensor and the side wall of the transparent plate, and an optical element made of a transparent resin, the optical element being formed on the transparent plate, and the optical element When viewed from the optical axis direction of the element, the outer periphery of the optical element is formed closer to the optical axis center side than the outer periphery of the transparent plate.

  In order to solve the above-described problem, a method for manufacturing a solid-state imaging device according to the present invention provides a transparent plate so as to face the effective pixel region of the solid-state imaging device and to exist inside the planar shape of the solid-state imaging device. A first step of disposing, a second step of sealing a part of the solid-state imaging device, and a side wall of the transparent plate with a sealing resin, and an optical unit made of a transparent resin on the transparent plate And a third step of forming an element, wherein the optical element and the sealing resin are not in contact with each other in the third step.

  According to the above invention, the optical element is formed on the transparent plate, and when viewed from the optical axis direction of the optical element, the outer periphery of the optical element is closer to the optical axis center side than the outer periphery of the transparent plate. Is formed.

  Therefore, since the optical element is formed on the transparent plate, it is possible to suppress the incident light to the peripheral part of the solid-state imaging element from becoming dark.

  Moreover, since the optical element does not have the same outer peripheral side wall as the transparent plate, stray light incident on the effective pixel region of the solid-state imaging element can be suppressed.

  For example, when the optical element is formed by curing with a fluid resin, when molding the optical element, the mold is filled with the resin, and the mold and the transparent plate are brought into contact with each other and cured. In that case, in this invention, an optical element is formed on a transparent plate, and is not formed on sealing resin. Therefore, the resin does not come into contact with the step portion between the upper surface of the transparent plate and the upper surface of the sealing resin, thereby preventing the resin from leaking out from the step and obtaining a desired optical element shape.

  Furthermore, the resin is sealed between the mold and the transparent plate and is not exposed to the atmosphere. Thereby, for example, a resin that inhibits curing by oxygen can be selected, and a design with flexibility can be performed. As a result, it is possible to provide a method for manufacturing a reliable and high-performance solid-state imaging device.

  In addition, since the sealing resin and the optical element are not in contact, the solid-state imaging device having high reliability and environmental resistance can be obtained in that the optical element is not peeled off from the sealing resin.

  Therefore, it is possible to suppress the incident light to the peripheral portion of the solid-state imaging element from becoming dark, to suppress stray light that enters the effective pixel region of the solid-state imaging element, and to obtain high reliability, In addition, a method for manufacturing a solid-state imaging device can be provided.

  In the solid-state imaging device of the present invention, the optical element is formed so that the outer periphery of the optical element is outside the effective pixel region of the solid-state imaging element when viewed from the optical axis direction of the optical element. It is preferable.

  Thus, the optical element covers the entire effective pixel region of the solid-state image sensor. As a result, also in the optical element, it is possible to refract the light incident on the outer peripheral portion of the corresponding planar region of the effective pixel region and correct the light angle so as to approach a right angle. Accordingly, it is possible to reliably suppress the incident light to the peripheral portion of the solid-state imaging element from becoming dark.

  In the solid-state imaging device of the present invention, it is preferable that the transparent plate is disposed so as to exist inside a planar shape of the solid-state imaging element.

  Thereby, by making the area of the transparent plate smaller than the area of the solid-state imaging device, the solid-state imaging device is also reduced accordingly, and as a result, the imaging device including this solid-state imaging device is also provided with a small size Can do.

  In the solid-state imaging device of the present invention, the optical element may be formed such that the outer periphery of the optical element is curved when viewed from the optical axis direction of the optical element.

  Thereby, for example, when the optical element is formed by curing with a fluid resin, the inner shape of the mold used when forming the optical element is continuous without a sharp inflection point, Chipping is unlikely to occur during cutting and can be easily manufactured. Therefore, it is possible to provide a solid-state imaging device that can achieve low cost in the production of the mold.

  In the solid-state imaging device of the present invention, the optical element may be formed so that an outer periphery of the optical element includes one or more straight lines when viewed from the optical axis direction of the optical element. it can.

  This makes it easy to recognize the center of the optical element by using a straight line rather than a curve as the outer periphery of the optical element, and can function as a marker for position adjustment with the imaging device when forming and inspecting the optical element. Thus, it is possible to provide a low-cost and high-performance solid-state imaging device that performs high-precision position adjustment in a short time.

  In the solid-state imaging device of the present invention, the optical element has an outer periphery formed of a curved line and one or more straight lines when viewed from the optical axis direction of the optical element. Can do.

  As a result, the outer shape of the optical element can be formed between the effective pixel region of the solid-state imaging device that is generally rectangular and the transparent plate that is a rectangle slightly wider than the effective pixel region. Therefore, a transparent plate having a size comparable to the effective pixel area of the solid-state image sensor can be employed, and a small solid-state image sensor can be provided.

  In the solid-state imaging device of the present invention, the optical element includes an effective area formed in an effective pixel area of the solid-state imaging element and other ineffective areas. The effective area of the optical element is It is preferable that the effective light beam in the imaging system is refracted and guided to the effective pixel region of the solid-state image sensor, while the ineffective region of the optical element is formed so as not to be involved in the effective light beam.

  Thereby, the light beam that has passed through the ineffective area of the optical element has a configuration that is not related to imaging, and the shape of the optical element in the ineffective area can be designed to an arbitrary shape. Therefore, for example, the mold can be easily molded, such as a structure in which the optical element is easily released from the mold, and a high-throughput and low-cost solid-state imaging device can be provided.

  In the solid-state imaging device of the present invention, the optical element has an inflection point between the cross-sectional shape of the effective region and the cross-sectional shape of the non-effective region, and has different curvatures or gradients. It can be assumed that it intersects the transparent plate surface in the effective region.

  Thereby, since the shape in the ineffective area | region of an optical element can be set freely, a simplification of a shaping | molding die and an optical element can be aimed at, and a solid-state imaging device can be provided in a short period of time.

  In the solid-state imaging device of the present invention, the optical element may have a part of a circle whose tangent line is the transparent plate surface in the cross-sectional shape of the ineffective area.

  As a result, by changing the cross-sectional shape of the ineffective area of the optical element to a circle partially tangent to the transparent plate surface, the outer shape of the optical element can be accommodated in the transparent plate, and gradually Since the thickness of the optical element in the portion is reduced, the stress is not concentrated on the end portion at the time of mold release, and the mold release becomes easy. As a result, a high-throughput and low-cost solid-state imaging device can be provided.

  In the solid-state imaging device of the present invention, the optical element has a straight line in a direction away from the optical axis of the optical element as it approaches the solid-state imaging element from the optical element in the cross-sectional shape of the ineffective region. It can be assumed to be part of the shape.

  Thus, by changing the cross-sectional shape of the ineffective area of the optical element to a straight line from the middle, the outer shape of the optical element can be accommodated in the transparent plate, and the straight line in the cross-sectional shape and the curve of the optical element Can be made to function as a marker for position adjustment with the imaging device at the time of forming and inspecting the optical element. As a result, it is possible to provide a low-cost and high-performance solid-state imaging device that performs highly accurate position adjustment in a short time.

  In the solid-state imaging device of the present invention, it is preferable that a silane coupling agent is applied to the surface of the transparent plate on the optical element side.

  Thereby, for example, the adhesive force between the transparent plate that is an inorganic material and the optical element that is an organic material can be improved by the silane coupling agent, and a solid-state imaging device with high environmental resistance can be provided.

  In the solid-state imaging device of the present invention, it is preferable that an infrared wavelength cut film is provided on the optical element side of the transparent plate.

  As a result, the solid-state imaging device does not cause near-infrared light to be converted into an electrical signal and cause deterioration in image quality such as a decrease in resolution and image unevenness.

  In the solid-state imaging device of the present invention, it is preferable that a silane coupling agent is provided between the infrared wavelength cut film and the optical element.

  Thereby, the adhesive force of the infrared wavelength cut film | membrane which is an inorganic material, and the optical element which is organic materials can be improved with a silane coupling agent, and a solid-state imaging device with high environmental resistance can be provided.

  In the solid-state imaging device of the present invention, it is preferable that the optical element has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C.

  As a result, it is possible to mount the solid-state imaging device on the substrate by reflowing the external connection terminals of the solid-state imaging device and the wiring on the substrate such as the FPC with a reflow process while the optical element is mounted. . Therefore, since the manufacturing process is simplified, a low-cost solid-state imaging device can be provided.

  In order to solve the above-described problems, an imaging apparatus according to the present invention includes the above-described solid-state imaging device.

  Thereby, it is possible to suppress the incident light to the peripheral portion of the solid-state imaging element from being darkened, to suppress the stray light incident to the effective pixel region of the solid-state imaging element, and to obtain high reliability. Can be provided.

  In the method for manufacturing a solid-state imaging device of the present invention, the third step includes the first process of filling the mold with a fluid curable resin having fluidity, and the energy curable by applying light energy or thermal energy. And a second treatment for curing the resin.

  Thereby, an optical element can be formed using the shaping | molding die filled with energy curable resin. Therefore, convex surfaces of optical elements having a desired shape, such as aspherical lenses having power, lenses having a Fresnel shape, and diffractive lenses having a fine relief shape, can be easily formed.

  In the method for manufacturing a solid-state imaging device according to the present invention, it is preferable to perform the second process while confirming a position where the optical element is to be formed using a transparent mold.

  As a result, since the energy curable resin and the mold filled in the mold are transparent, the center of the effective pixel area of the solid-state imaging device can be visually recognized through the transparent mold filled with the energy curable resin. Can do. That is, it is possible to form an optical element at a desired position on the transparent plate while confirming the position using, for example, a camera. For this reason, the center of the optical element can be mechanically accurately arranged right above the center of the effective pixel region.

  Therefore, the production yield of the solid-state imaging device can be improved.

  As described above, the solid-state imaging device of the present invention includes a solid-state imaging device in which an effective pixel region is formed, a transparent plate disposed so as to face the effective pixel region of the solid-state imaging device, and the solid-state imaging device. A sealing resin that seals a part of the side wall of the transparent plate, and an optical element made of the transparent resin, the optical element formed on the transparent plate, and light of the optical element When viewed from the axial direction, the outer periphery of the optical element is formed closer to the optical axis center side than the outer periphery of the transparent plate.

  As described above, the manufacturing method of the solid-state imaging device of the present invention arranges the transparent plate so as to face the effective pixel region of the solid-state imaging device and to exist inside the planar shape of the solid-state imaging device. A first step, a second step of sealing a part of the solid-state imaging device and a side wall of the transparent plate with a sealing resin, and forming an optical element made of a transparent resin on the transparent plate The optical element and the sealing resin are not in contact with each other in the third process.

  Moreover, the imaging device of the present invention includes the above-described solid-state imaging device as described above.

  Therefore, it is possible to suppress the incident light to the peripheral portion of the solid-state imaging element from becoming dark, to suppress the stray light incident to the effective pixel region of the solid-state imaging element, and to obtain high reliability. The present invention provides an effect of providing a method for manufacturing a solid-state imaging device and a photographing apparatus including the solid-state imaging device.

[Reference form]
In applying a resinous lens to the solid-state imaging device 151 of Patent Document 3 shown in FIG. 14, the inventors of the present application have proposed the following technique in a previous application (Japanese Patent Application No. 2007-094985).

  The present application solves the problems of the previous application. Therefore, before describing an embodiment of the present invention, the technology of the previous application and its problems will be described.

  First, the configuration and manufacturing method of the solid-state imaging device 80 disclosed in the previous application will be described. FIG. 8A is a plan view showing the configuration of the solid-state imaging device 80, and FIG. 8B is a cross-sectional view taken along the line XX ′ showing the configuration of the solid-state imaging device 80. FIG. ) Is a cross-sectional view taken along the line YY ′ showing the configuration of the solid-state imaging device 80. FIG. 9A is a cross-sectional view taken along the line XX ′ of FIG. 8A for explaining one process in the manufacturing process of the solid-state imaging device 80, and FIG. FIG. 9C is a cross-sectional view taken along the line YY ′ of FIG. 8A for explaining one process in the manufacturing process of the imaging device 80, and FIG. 9C is the vicinity of the lens end 83a of FIG. 9B. FIG.

  As shown in FIGS. 8A and 8B, the solid-state imaging device 80 includes a sensor substrate 81 having an external connection terminal 89 formed in the lower portion thereof, and a sensor chip 82 that is a solid-state imaging device formed on the sensor substrate 81. A glass plate 84 that is a transparent plate disposed so as to face the effective pixel region 91 of the sensor chip 82, a spacer 86 that holds the sensor chip 82 and the glass plate 84 in parallel, a part of the sensor substrate 81, A part of the sensor chip 82, a sealing resin 85 that seals the side wall of the glass plate 84 and the side wall of the spacer 96, and a resin lens 83 that is an optical element that covers the glass plate 84 are provided.

  The effective pixel area 91 is formed in an area on the sensor chip 82 sandwiched between the spacers 86. The lens 83 is obtained by filling a mold with a photocurable resin 83 ′ that is cured by irradiation with ultraviolet rays and curing the resin by ultraviolet irradiation.

  A space surrounded by the effective pixel area 91, the glass plate 84, and the spacer 86 of the sensor chip 82 forms a sealed air layer 87. The glass plate 84 penetrates into the air layer 87, such as moisture, dust, dust, etc., and damage to the effective pixel area 91 caused by other members or parts of the manufacturing apparatus coming into contact with the effective pixel area 91 in the manufacturing process. Thus, the effective pixel area 91 is protected. The spacer 86 is formed by thermosetting a thermosetting resin sandwiched between the sensor chip 82 and the glass plate 84. For this reason, the air layer 87 is completely sealed.

  Further, the sensor chip 82 and the sensor substrate 81 are electrically connected by a bonding wire 88. That is, the sensor chip 82 can output an electrical signal to the outside via the bonding wire 88, the sensor substrate 81, and the external connection terminal 89. The bonding wire 88 is also sealed with a sealing resin 85, and the sealing resin 85 prevents contact between the bonding wires 88, disconnection of the bonding wire 88, and the like.

  The sealing resin 85 is formed by assembling the sensor substrate 81, the sensor chip 82, the glass plate 84, the spacer 86, and the bonding wire 88 and then pouring them around. At that time, the upper surface of the sealing resin 85 is formed below the upper surface of the glass plate 84 in order to prevent the glass plate 84 from going around to the upper surface (the upper side shown in FIG. 8B).

  Here, the bonding wire 88 is connected to the outside of the region of the sensor chip 82 where the spacer 86 is formed. For this reason, if the glass plate 84 has a plane dimension (size) that can cover the effective pixel region 91, the effective pixel region 91 can be protected.

  Further, since it is not necessary to dispose the bonding wire 88 inside the air layer 87, the height of the spacer 86 forming the air layer 87 may be such that the glass plate 84 does not contact the effective pixel region 91. That is, since it is not necessary to arrange the bonding wire 88 inside the air layer 87, the solid-state imaging device 80 can be reduced in size and thickness (lower profile).

  Furthermore, in order to reduce the size of the solid-state imaging device 80, the glass plate 84 needs to have a planar dimension (size) equivalent to that of the effective pixel region 91. When the glass plate 84 is larger than necessary, the glass plate 84 comes into contact with the bonding wire 88, and the sensor chip 82 and the sensor substrate 81 are enlarged, and a design for avoiding the contact is required. As a result, since the solid-state imaging device 80 is increased in size, it is preferable that the glass plate 84 has a planar dimension equivalent to that of the effective pixel region 91.

  Since the lens 83 formed on the glass plate 84 is formed in a convex lens shape, the light incident on the lens 83 can be refracted so that the angle of the light approaches a right angle. The farther the light incident position is from the center of the effective pixel region 91, the farther the angle of the light is from the vertical. Since the effective pixel area 91 recognizes incident light and converts it into an electrical signal, the efficiency becomes lower as the angle of the incident light becomes farther from the right angle, and thus the above correction is necessary. For this reason, the lens 83 needs to cover the entire surface of the effective pixel region 91 in order to increase the light incident efficiency at the outer peripheral portion of the effective pixel region 91.

  Here, since the glass plate 84 has the same planar dimensions as the effective pixel region 91, when the lens 83 is formed, the lens 83 protrudes from the glass plate 84 and is sealed as shown in FIGS. It is also formed on the stop resin 85.

  As will be described later, in order to form the lens 83 on the glass plate 84 without tilting, it is necessary that the lens mold is in contact with the glass plate 84. Therefore, an exposed exposed region 84a is provided on the glass plate 84.

  From the above configuration, as shown in FIG. 8C, in the cross-sectional view taken along the line XX ′ in the diagonal direction of the glass plate 84, the lens 83 is formed on the glass plate 84, as shown in FIG. Thus, in the cross-sectional view taken along the line YY ′, the lens 83 is formed on the glass plate 84 and the sealing resin 85.

  A method for manufacturing the resin lens 83 will be described with reference to FIGS. 9 (a), 9 (b), and 9 (c).

  The lens 83 is made of a photocurable resin 83 ′ that is cured by ultraviolet irradiation. The lens 83 is formed by filling the depression of the mold 92 with the photocurable resin 83 ′ and irradiating with ultraviolet rays while the flat portion of the mold 92 is in contact with the glass plate 84.

  In the diagonal direction XX ′ of the glass plate 84 shown in FIG. 8A, the mold 92 and the glass plate 84 are brought into contact with the glass plate 84 as shown in FIG. 9A. And the mutual inclination can be reduced. As a result, the lens 83 and the glass plate 84 can be adjusted.

  In YY ′ of the glass plate 84 shown in FIG. 8A, the lens 83 is formed in the sealing resin 85 because the glass plate 84 is smaller than the depression of the mold 92 as shown in FIG. 9B. Is done.

  An enlarged view of the lens end portion 83a formed on the sealing resin 85 is shown in FIG. The flat surface of the mold 92 and the glass plate 84 coincide as described above. Here, there is a gap G between the upper surface of the glass plate 84 and the upper surface of the sealing resin 85, and the flat surface of the mold 92 and the sealing resin 85 are not in contact with each other.

  However, the solid-state imaging device 80 having the above configuration has the following problems.

  First, since the photocurable resin 83 ′ is a fluid before curing, the photocurable resin 83 ′ is subjected to capillary force and photocurable resin 83 ′ when contacting the mold 92 and the glass plate 84. The gravity flows out from the depression of the mold 92 through the gap G. Due to this phenomenon, it becomes impossible to secure the amount of resin necessary for forming the lens 83, and a recess and bubbles are generated in a part of the lens 83, so that a desired lens shape cannot be obtained.

  Next, many photocurable resins, such as silicone resins, do not cure in the air (in an oxygen atmosphere) due to inhibition of curing by oxygen. In this configuration, the photo-curing resin 83 ′ before curing in the gap G comes into contact with the atmosphere, so that the photo-curing resin 83 ′ near the gap G is not cured. In addition, the options are limited to a photo-curing resin that does not inhibit the effect of oxygen, and the problem that the design with a degree of freedom cannot be performed simultaneously occurs.

On the other hand, as described above, the lens end portion 83a is bonded to a part of the sealing resin 85, but the adhesive force between the lens 83 and the sealing resin 85 is small. This is due to the following two reasons.
(1) Since the lens 83 is formed after the sealing resin 85 is compressed and formed using a mold (not shown), the sealing resin 85 does not have chemical activity when the lens 83 is formed.
(2) After the molding of the sealing resin 85, a release agent is attached to the surface of the sealing resin 85 so that the sealing resin 85 and a mold for forming the sealing resin 85 are easily peeled off. Further, since the lens 83 and the sealing resin 85 are made of different resins, they have different thermal expansion coefficients.

  Therefore, if the lens 83 is formed on the sealing resin 85, the lens end 83a is sealed due to a heating / cooling process in the mounting process of the solid-state imaging device 80 or a change in environmental temperature in which the product incorporating the solid-state imaging device 80 is used. Peel from the stop resin 85.

  As a result, the lens end portion 83a is peeled off from the sealing resin 85, thereby causing a problem that the lens 83 is deformed and desired optical characteristics cannot be obtained. Further, since the adhesiveness between the sealing resin 85 and the resin of the lens end portion 83a is poor, the resin of the lens end portion 83a adheres to the mold at that location, and the mold needs to be cleaned.

  As described above, various problems remain in the solid-state imaging device 80.

[Embodiment 1]
An embodiment of the present invention will be described below with reference to FIGS.

  The solid-state imaging device according to the present embodiment solves the problem of the solid-state imaging device 80 described in the reference embodiment.

  The configuration and formation method of the solid-state imaging device 10 of the present embodiment will be described below with reference to FIGS. 1 (a), (b), and (c) and FIGS. 2 (a), (b), and (c). FIG. 1A is a plan view showing the configuration of the solid-state imaging device 10, and FIG. 1B is a cross-sectional view taken along the line AA ′ in FIG. 1A showing the configuration of the solid-state imaging device 10. FIG. 1C is a cross-sectional view taken along the line AA ′ of FIG. 1A for explaining one process among the manufacturing processes of the solid-state imaging device 10. 2A is an enlarged cross-sectional view of the vicinity of the lens corner 3a of the lens 3 of the solid-state imaging device 10 shown in FIG. 1A. FIGS. 2B and 2C are FIGS. It is sectional drawing to which the lens corner edge part 3a vicinity of the lens 3 of the solid-state imaging device 10 shown to (a) was expanded.

  As shown in FIG. 1B, the solid-state imaging device 10 of the present embodiment includes a sensor substrate 1 having an external connection terminal 9 formed in the lower portion, and a sensor as a solid-state imaging device formed on the sensor substrate 1. Chip 2, transparent substrate 4 as a transparent plate such as a glass plate disposed so as to face effective pixel region 11 of sensor chip 2, spacer 6 holding sensor chip 2 and transparent substrate 4 in parallel, sensor A part of the substrate 1, a part of the sensor chip 2, a sealing resin 5 for sealing the side wall of the transparent substrate 4 and the side wall of the spacer 6, and a lens 3 as a resin optical element covering the transparent substrate 4 are provided. Yes.

  The effective pixel area 11 of the sensor chip 2 is formed in an area on the sensor chip 2 sandwiched between the spacers 6. The lens 3 is obtained by filling a mold 22 (described later) with a photocurable resin 3 ′ that is cured by ultraviolet irradiation, and curing the resin by ultraviolet irradiation.

  A space surrounded by the effective pixel region 11, the transparent substrate 4, and the spacer 6 of the sensor chip 2 forms a sealed air layer 7. The transparent substrate 4 has intrusion of moisture, dust, dust, and the like into the air layer 7, and damage to the effective pixel region 11 caused by other members or parts of the manufacturing apparatus coming into contact with the effective pixel region 11 in the manufacturing process. Thus, the effective pixel region 11 is protected. The spacer 6 is formed by thermosetting a thermosetting resin sandwiched between the sensor chip 2 and the transparent substrate 4. For this reason, the air layer 7 is completely sealed.

  The sensor chip 2 and the sensor substrate 1 are electrically connected by a bonding wire 8. That is, the sensor chip 2 can output an electrical signal to the outside via the bonding wire 8, the sensor substrate 1, and the external connection terminal 9. The bonding wire 8 is also sealed with the sealing resin 5, and the sealing resin 5 prevents contact between the bonding wires 8 and disconnection of the bonding wire 8.

  Here, the bonding wire 8 is connected to the outside of the region of the sensor chip 2 where the spacer 6 is formed. For this reason, if the transparent substrate 4 has a plane dimension (size) that can cover the effective pixel region 11, the effective pixel region 11 can be protected.

  Furthermore, since it is not necessary to arrange the bonding wire 8 inside the air layer 7, the height of the spacer 6 that forms the air layer 7 may be such that the transparent substrate 4 does not contact the effective pixel region 11. That is, since it is not necessary to arrange the bonding wire 8 inside the air layer 7, the solid-state imaging device 10 can be reduced in size and thickness (low profile).

  Since the lens 3 formed on the transparent substrate 4 is formed in a convex lens shape, the light incident on the lens 3 can be refracted so that the angle of the light approaches a right angle. The farther the light incident position is from the center of the effective pixel region 11, the farther the angle of the light is from the vertical. Since the effective pixel region 11 recognizes incident light and converts it into an electric signal, the efficiency becomes lower as the angle of the incident light becomes farther from the right angle, and thus the above correction is necessary. For this reason, the lens 3 needs to cover the entire surface of the effective pixel region 11 in order to increase the incident efficiency of light at the outer peripheral portion of the effective pixel region 11.

  Next, main feature points of the solid-state imaging device 10 of the present embodiment will be described below with reference to FIG.

  As shown in FIG. 1A, the solid-state imaging device 10 of the present embodiment includes a sealing resin 5 that covers a part of the side surface and the upper surface of the solid-state imaging device 10, and a transparent substrate 4 surrounded by the sealing resin 5. The resin lens 3 formed on the transparent substrate 4 and the effective pixel region 11 of the sensor chip 2 on which the light transmitted through the lens 3 and the transparent substrate 4 enters.

  In the effective pixel region 11, one set of opposite sides has a length W1, and the other set of sides has a length W2. On the upper surface of the transparent substrate 4, one set of opposite sides has a length W3, and the other set of sides has a length W4. The difference between the length W1 and the length W3, or the difference between the length W2 and the length W4 is equal to the width of the spacer 6. That is, the size (W3 × W4) of the upper surface of the transparent substrate 4 is obtained by adding the size of the upper surface of the spacer 6 to the size (W1 × W2) of the effective pixel region 11, and as described above, And the size of the effective pixel region 11 are approximately the same. Specifically, the size of the upper surface of the transparent substrate 4 is larger by the spacer 6 than the size of the effective pixel region 11. Further, since the transparent substrate 4 needs not to contact the bonding wire 8, it is smaller than the size of the sensor substrate 1.

  Since the size (W3 × W4) of the upper surface of the transparent substrate 4 and the size (W1 × W2) of the effective pixel region 11 are almost the same, when the lens 3 is formed so as to cover the entire effective pixel region 11, a circular shape is formed. In the lens, the outer periphery of the lens protrudes from the transparent substrate 4. Here, it is not necessary for the lens 3 to cover the entire upper surface of the transparent substrate 4, and it is sufficient if it is on the effective pixel region 11.

  In addition, when the photocurable resin 3 ′ is present on the sealing resin 5 at the time of molding, several problems occur as in the solid-state imaging device 80 described in the reference embodiment.

  Therefore, in the solid-state imaging device 10 of the present embodiment, the lens 3 covers the effective pixel region 11 and is formed on the inner side of the outer portion of the transparent substrate 4 without covering the sealing resin 5. I am going to do that. In other words, the outer shape of the lens 3 is formed outside the effective pixel region 11 and inside the outer shape of the transparent substrate 4 as shown in FIG.

  In the present embodiment, the lens 3 is composed of a photocurable resin 3 ′ that is cured by ultraviolet irradiation. Here, as shown in FIG. 1C, the lens 3 is filled with a photocurable resin 3 ′ in the depression of the mold 22, and the flat portion of the mold 22 is in contact with the transparent substrate 4. It is formed by irradiating.

  The lens 3 is for correcting the angle of light incident on the solid-state imaging device 10 so as to approach a right angle, and is formed so that light transmitted through the center of the lens 3 is incident on the effective pixel region 11 at a right angle. Need to be done. In order to form the lens 3 so that the angle of the incident light can be appropriately corrected, a plane parallel to the effective pixel region 11 is formed on the flat portion 22a of the mold 22 (a portion surrounded by a broken line in FIG. 1C). Need to contact.

  In the present embodiment, the transparent substrate 4 is bonded to the sensor chip 2 via the spacer 6 so as to face the effective pixel region 11. Since the transparent substrate 4 has a parallel plane shape and the spacer 6 has a very thin configuration having a uniform thickness, the upper surface of the transparent substrate 4 is parallel to the effective pixel region 11.

  In the present embodiment, the lens 3 is formed in a state where the flat portion of the mold 22 is in contact with the upper surface of the transparent substrate 4 parallel to the effective pixel region 11. Can be incident on the effective pixel region 11 at a right angle. That is, since the transparent substrate 4 has the exposed portion from the lens 3, the mounting accuracy of the lens 3 can be increased.

  Generally, the shape of the upper surface of the transparent substrate 4 has a rectangle in which the length W4 is slightly longer than the length W3. Similarly, the effective pixel region 11 has a rectangular shape in which the length W2 is slightly longer than the length W1. In the present embodiment, the solid-state imaging device 10 in which the effective pixel region 11 (the upper surface of the transparent substrate 4) has a rectangular shape is described. However, the shape of the effective pixel region 11 (the upper surface of the transparent substrate 4) is described as necessary. May be changed as appropriate.

  Here, the configuration of the lens corner end portion 3a of the lens 3 shown in FIG. 1A will be described with reference to FIG.

  In the present embodiment, the lens 3 is designed so that the diagonal distance of the effective pixel region 11 is the optical effective diameter. That is, the lens 3 is designed so that the center of the effective pixel region 11 is the optical center, the diameter is the diagonal distance of the effective pixel region 11, and the outer shape is circular. The lens outer shape is not limited to a circle but may be an ellipse.

  Since the lens 3 has a convex lens shape, in the diagonal direction of the transparent substrate 4 indicated by the line AA ′ in FIG. 1A, the lens ridge line is near the outside of the effective diameter as shown in FIG. Intersects with the transparent substrate 4.

  Next, the configuration of the lens side end portion 3b of the lens 3 shown in FIG. 1A will be described with reference to FIG.

  As described above, the lens 3 is designed with the effective distance of the diagonal of the effective pixel region 11 as an optical effective diameter. However, if the circular lens 3 is left as it is, the planar shape of the lens 3 is larger than the planar shape of the transparent substrate 4. Therefore, it is formed in the sealing resin 5 and becomes a problem of the solid-state imaging device 80 described in the reference embodiment.

  Therefore, in the present embodiment, in the direction other than the diagonal direction of the effective pixel region 11, it is necessary to take a shape different from the design shape in the region other than on the effective pixel region 11, and the ridgeline of the lens 3 is transparent. The design intersects with the substrate 4.

  Specifically, as shown in FIG. 2B, the lens side end portion 3b of the lens 3 is formed so that the cross section thereof is a straight line SL1. This straight line SL1 has an inclination in a direction spreading toward the outside of the lens 3 as it approaches the sensor chip 2. This gradient structure can reduce the force required at the time of mold release after curing the photocurable resin 3 ′ and can provide an extreme value for switching from a curved surface shape to a linear shape. It can be used as a marker when performing position adjustment and inspection.

  In addition, as a shape of the other ridgeline in the lens side edge part 3b, as shown in FIG.2 (c), it is good also considering the circle CL which makes the upper surface of the transparent substrate 4 a tangent as a part of shape. In addition, as another shape of the ridgeline of the lens side edge 3b, a combination of the straight line SL1 and the circle CL may be used.

  Summarizing the outer shape of the lens 3, as shown in FIG. 1A, the outer shape of the lens 3 is such that the center of the effective pixel region 11 is the optical center and the diameter is in the diagonal direction of the effective pixel region 11. It consists of a part of the circular outer shape of the lens designed as the diagonal distance of the effective pixel region 11. Further, in the direction other than the diagonal direction of the effective pixel region 11, the outer shape of the lens 3 is configured by straight lines parallel to the four sides of the effective pixel region 11 and the transparent substrate 4.

  The main configuration of the solid-state imaging device 10 according to the present embodiment has been described above.

  Next, a more preferable configuration of the solid-state imaging device 10 and a configuration that can be employed in the solid-state imaging device 10 will be described below.

  In the present embodiment, the lens 3 uses a photocurable resin 3 ′ that is cured by irradiation with ultraviolet rays. However, the resin constituting the lens 3 is not necessarily limited to this, and irradiation with light other than ultraviolet rays can be used. It may be a photocurable resin 3 ′ that is cured, or may be a thermosetting resin that is cured by application of thermal energy.

  Moreover, as resin which comprises the lens 3 of this Embodiment, it is resin hardened | cured by providing energy, and if it is resin which has a light transmittance after hardening, it can select suitably from conventionally well-known resin. In the present specification, the photocurable resin 3 ′ and the thermosetting resin may be collectively referred to as “energy curable resin” in some cases.

  Furthermore, in the solid-state imaging device 10 of the present embodiment, it is preferable that the lens 3 has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C.

  That is, when the resin constituting the lens 3 is denatured under a temperature condition of −60 ° C. to 270 ° C., the solid-state imaging device 10 is appropriately corrected when the visible light transmittance is not 80% or more. It cannot be done. However, the lens 3 has a configuration in which it has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C., so that the lens 3 is exposed to the temperature condition. However, it is possible to maintain the action of the lens 3 that corrects the light incident on the solid-state imaging device 10 so as to enter the solid-state imaging device 10 almost perpendicularly.

  Here, when the lens 3 is not formed, the solid-state imaging device 10 normally melts and solidifies the solder by reflow processing of the external connection terminals 9 and wiring on a substrate such as a flexible printed circuit (FPC). To be mounted on the substrate. After the reflow process, an imaging lens (camera module) is manufactured by mounting an optical lens on the solid-state imaging device 10.

  For example, when the solid-state imaging device 10 is mounted on a flexible printed circuit board (FPC) or the like, the lead-free solder reflow mounting process is performed with a temperature profile as shown in FIG.

  Examples of the resin satisfying the above conditions include energy curing such as a silicone resin having an alkyl group and / or a phenyl group and / or a methyl group and / or a methacryl group, and an organic-inorganic hybrid silicone resin in which a carbon skeleton and a silicone skeleton are hybridized. Can be mentioned.

  That is, by configuring the optical element from the exemplified materials, the solid-state imaging device 10 can be mounted on the substrate by reflow processing even when the optical element is formed on the transparent plate.

  In the present embodiment, the lens 3 is filled with a photocurable resin 3 ′, which is an energy curable resin, in a molding die 22, and the molding die 22 is cured while the transparent substrate 4 and the sealing resin 5 are in contact with each other. It is formed by letting. For this reason, it is easy to form the lens 3 in a desired shape. The shape of the convex surface of the lens 3 may be a shape that corrects the light incident on the lens 3 so that it can be emitted perpendicularly to the effective pixel region 11, and may be a spherical surface or an aspherical surface. For example, the lens 3 may be formed as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape.

  Moreover, it is preferable that a silane coupling agent is provided on the transparent substrate 4. The silane coupling agent to be applied to the transparent substrate 4 is only required to improve the chemical adhesive force with the lens 3, and the properties of the resin constituting the lens 3 from the conventionally known silane coupling agent. It may be appropriately selected according to the above. As the silane coupling agent that improves the adhesive force between the lens 3 and the transparent substrate 4, an epoxy or amino silane coupling agent is preferable.

  The silane coupling agent may be applied to the transparent substrate 4 as follows.

  First, the silane coupling agent is diluted to about 1% with an organic solvent such as isopropyl alcohol. Next, the upper surface of the transparent substrate 4 is immersed (dip) in the diluted silane coupling agent. And the silane coupling agent can be provided to the transparent substrate 4 by drying the transparent substrate 4 dipped with the silane coupling agent. In addition to the method described here, a silane coupling agent can be applied to the transparent substrate 4 using a conventionally known method.

  The silane coupling agent can be applied between an infrared cut filter as an infrared wavelength cut film, which will be described later, and the lens 3. Thereby, the adhesiveness of an infrared wavelength cut film and the lens 3 can be improved.

  Furthermore, it is preferable that a microlens is formed on the effective pixel region 11 of the sensor chip 2.

  By having the above configuration, it is possible to further correct the angle of light emitted from the lens 3 (the emission angle is corrected) and incident on the effective pixel region 11 by the microlens. Therefore, the light incident on the effective pixel region 11 of the solid-state imaging device 10 can be corrected to a more optimal state.

  Further, when the solid-state imaging device 10 is applied to an imaging device, the design (shape and shape) of the optical system (lens 3, microlens, imaging lens, etc.) of the entire imaging device is also taken into consideration the formation position of the microlens and the like. It is preferable to perform the arrangement.

  In addition, an infrared cut filter as an infrared wavelength cut film is preferably formed between the transparent substrate 4 and the lens 3.

  That is, when the solid-state imaging device 10 is built in a photographing device such as a camera or a video recorder camera, it is necessary to avoid that infrared rays unnecessary for image formation are incident on the sensor chip 2. In order to avoid the incidence of infrared rays on the sensor chip 2, it is necessary to reflect and / or absorb (cut) the infrared rays. Here, description will be made below by taking as an example the formation of a dielectric multilayer film for reflecting infrared rays between the transparent substrate 4 and the lens 3.

  In the dielectric multilayer film, the range of the wavelength of reflected light changes according to the incident angle of light. For this reason, when a dielectric multilayer film is formed on a curved surface (for example, the lens 3), the wavelength of the reflected light is different between the vicinity of the center and the vicinity of the end portion. For this reason, it is preferable to form on the flat transparent substrate 4.

  The dielectric multilayer film is formed on the surface of the transparent substrate 4 on which the lens 3 is formed. This is because when the dielectric multilayer film is formed on the surface of the transparent substrate 4 facing the effective pixel region 11, when the dielectric multilayer film is peeled off, the dielectric multilayer film adheres to the effective pixel region 11 to deteriorate the image quality.

  If the dielectric multilayer film is formed only on the transparent substrate 4, the transparent substrate 4 is warped due to the film stress of the dielectric multilayer film. However, after the dielectric multilayer film is formed on the transparent substrate 4 having a large area, the transparent substrate 4 is divided into small pieces by dicing, so that the film stress can be released (reduced). For this reason, the warp of the transparent substrate 4 due to the formation of the dielectric multilayer film does not deteriorate the quality of the image formed by the solid-state imaging device 10. Here, the infrared reflective dielectric multilayer film is a multilayer film in which high refractive index layers and low refractive index layers are alternately formed by sputtering or vapor deposition.

  Further, the transparent substrate 4 may be a transparent member having a plane-parallel plate shape, and is not limited to glass but may be made of resin or the like.

  Furthermore, the sensor substrate 1 may be a flat plate-like structure having an insulating property, and the entire sensor substrate 1 may be made of an insulating material or the surface of the sensor substrate 1 may have an insulating property. . The material for constructing the sensor substrate 1 can be selected from conventionally known various materials such as ceramic and resin. Moreover, conventionally well-known various methods can be employ | adopted for the method of providing insulation to the sensor substrate 1 surface.

  Moreover, the spacer 6 should just be a material which can hold | maintain the sensor chip 2 and the transparent substrate 4 in parallel, For example, it can select from conventionally well-known various materials, such as a material which has adhesiveness. The spacer 6 is preferably made of an opaque material so that light does not enter from members other than the transparent substrate 4.

  Furthermore, what is necessary is just to select as a material which comprises the sealing resin 5 from conventionally well-known various resin. The sealing resin 5 is preferably made of an opaque material so that light does not enter from members other than the transparent substrate 4. Further, as a method for forming the sealing resin 5, various conventionally known methods may be employed.

  That is, the process of forming the lens 3 in an incomplete solid-state imaging device (hereinafter simply referred to as a solid-state imaging device) after resin sealing is performed in the order of FIGS. 4A to 4D, for example.

  First, as shown in FIG. 4A, the solid-state imaging device 10 is vacuum-fixed (vacuum chucking) using a rod 21 of a mounter device (not shown) so that the transparent substrate 4 faces downward. At the same time, a photocurable resin 3 ′ having fluidity is filled in the depression formed to transfer the surface shape of the lens 3 of the transparent mold 22.

  Here, in the present embodiment, as the resin constituting the lens 3, a photocurable resin 3 ′ that is cured by irradiation with ultraviolet rays is described as an example. It can be applied to a method for manufacturing a solid-state imaging device.

  Next, as shown in FIG. 4B, the shape (planar shape and center position) of the effective pixel region 11 using the camera 23 through the transparent mold 22, the photocurable resin 3 ′, and the transparent substrate 4. Etc.). The image processing apparatus performs image processing on the captured shape of the effective pixel region 11. Next, the center of the transparent mold 22 that has been previously recognized by the image processing apparatus using the marking and the center of the effective pixel region 11 subjected to image processing are aligned in the X-axis direction and / or the Y-axis direction. The transparent substrate 4 may be provided with a silane coupling agent before the photocurable resin 3 ′ is fixed.

  After completion of the alignment, as shown in FIG. 4C, the transparent mold 22 filled with the photocurable resin 3 'is fixed in a state of being in contact with the transparent substrate 4. After fixing the transparent mold 22, a UV (Ultra Violet) lamp 24 is turned on to perform ultraviolet irradiation.

  By irradiating the UV lamp 24 with ultraviolet rays, the photocurable resin 3 ′ filled in the transparent mold 22 is cured.

  After the lens 3 is formed by sufficiently curing the photocurable resin 3 ′, the transparent mold 22 is released from the solid-state imaging device 10 as shown in FIG.

  By using the manufacturing method of the present embodiment, it is possible to easily form a lens 3 having a complicated shape, such as an aspherical lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape. it can. Furthermore, since the lens 3 can be formed while aligning so that the center of the lens 3 is accurately opposed to the center of the effective pixel region 11, an image with small aberration and high resolution can be formed. A solid-state imaging device 10 that can be provided can be provided.

  Therefore, it is possible to provide a solid-state imaging device 10 that achieves downsizing and thinning, and has high reliability (environment resistance) and performance, and a method for manufacturing the same, using a simple and inexpensive method.

  Thus, in the solid-state imaging device 10 of the present embodiment, the sensor chip 2 in which the effective pixel area is formed, the transparent substrate 4 disposed so as to face the effective pixel area of the sensor chip 2, and the sensor chip 2 And a sealing resin 5 for sealing the side wall of the transparent substrate 4 and a lens 3 made of a transparent resin. The lens 3 is formed on the transparent substrate 4 and the light of the lens 3 When viewed from the axial direction, the outer periphery of the lens 3 is formed closer to the optical axis center side than the outer periphery of the transparent substrate 4.

  Further, in the method for manufacturing the solid-state imaging device 10 of the present embodiment, the transparent substrate 4 is disposed so as to face the effective pixel region of the sensor chip 2 and to exist inside the planar shape of the sensor chip 2. The first step, the second step of sealing a part of the sensor chip 2 and the side wall of the transparent substrate 4 with the sealing resin 5, and the lens 3 made of transparent resin is formed on the transparent substrate 4. The lens 3 and the sealing resin 5 are not in contact with each other in the third step.

  According to this configuration, the lens 3 is formed on the transparent substrate 4, and the outer periphery of the lens 3 is formed closer to the optical axis center side than the outer periphery of the transparent substrate 4 when viewed from the optical axis direction of the lens 3. ing.

  Therefore, since the lens 3 is formed on the transparent substrate 4, it is possible to suppress the incident light to the peripheral part of the sensor chip 2 from becoming dark.

  Further, since the lens 3 does not have the same outer peripheral side wall as the transparent substrate 4, stray light incident on the effective pixel region of the sensor chip 2 can be suppressed.

  Further, for example, when the lens 3 is formed by curing with a fluid photocurable resin 3 ′, when molding an optical element, the mold 22 is filled with the photocurable resin 3 ′, and the mold 22 and the transparent substrate are filled. 4 is contacted and cured. At this time, in the present embodiment, the lens 3 is formed on the transparent substrate 4 and is not formed on the sealing resin 5. Therefore, the photo-curing resin 3 ′ does not come into contact with the step portion between the upper surface of the transparent substrate 4 and the upper surface of the sealing resin 5, so that the resin leaks out from the step and forms a desired optical element shape. There is no such thing as not being able to get.

  Furthermore, the photocurable resin 3 ′ is sealed between the mold 22 and the transparent substrate 4 and is not exposed to the atmosphere. Thereby, for example, the photocurable resin 3 ′ in which the inhibition of curing by oxygen can be selected, and a design with a degree of freedom can be performed. As a result, a reliable method for manufacturing the high-performance solid-state imaging device 10 can be provided.

  Further, since the sealing resin 5 and the lens 3 are not in contact with each other, the lens 3 is not peeled off from the sealing resin 5, so that the solid-state imaging device 10 having high reliability and environmental resistance can be obtained. it can.

  Therefore, the solid-state imaging device 10 that suppresses the dark incident light to the peripheral part of the sensor chip 2 and suppresses the stray light incident on the effective pixel region of the sensor chip 2 and can obtain high reliability. And a method of manufacturing the solid-state imaging device 10 can be provided.

  In the solid-state imaging device 10 of the present embodiment, the lens 3 is formed so that the outer periphery of the lens 3 is outside the effective pixel area of the sensor chip 2 when viewed from the optical axis direction of the lens 3.

  Thus, the lens 3 covers the entire effective pixel area of the sensor chip 2. As a result, also in the lens 3, the light incident on the outer peripheral portion of the corresponding plane region in the effective pixel region of the sensor chip 2 can be refracted and corrected so that the angle of the light approaches a right angle. Therefore, it is possible to reliably suppress the incident light to the peripheral part of the sensor chip 2 from becoming dark.

  Moreover, in the solid-state imaging device 10 of the present embodiment, the transparent substrate 4 is disposed so as to exist inside the planar shape of the sensor chip 2.

  Thereby, by making the area of the transparent substrate 4 smaller than the area of the sensor chip 2, the solid-state imaging device 10 is also correspondingly reduced. As a result, the imaging device 50 including the solid-state imaging device 10 described later is also small. Things can be provided.

  In the solid-state imaging device 10 of the present embodiment, the lens 3 can be assumed to have a curved outer periphery of the lens 3 when viewed from the optical axis direction of the lens 3.

  Thereby, for example, when the lens 3 is formed by curing with a fluid photocurable resin 3 ′, the inner shape of the molding die 22 used when forming the lens 3 does not have a sharp inflection point. Since it is continuous, chipping hardly occurs at the time of cutting and it can be easily manufactured. Therefore, it is possible to provide the solid-state imaging device 10 that can achieve low cost in the production of the mold 22.

  Further, in the solid-state imaging device 10 of the present embodiment, the lens 3 may be formed so that the outer periphery of the lens 3 includes one or more straight lines when viewed from the optical axis direction of the lens 3. it can.

  Accordingly, by using a straight line rather than a curve as the outer periphery of the lens 3, the center of the lens 3 can be easily recognized, and the lens 3 functions as a marker for position adjustment with the photographing apparatus 50 described later at the time of forming and inspecting the lens 3. Therefore, it is possible to provide a low-cost and high-performance solid-state imaging device 10 in which high-precision position adjustment is performed in a short time.

  Further, in the solid-state imaging device 10 of the present embodiment, the lens 3 is formed such that the outer periphery of the lens 3 is formed by a curve and one or more straight lines when viewed from the optical axis direction of the lens 3. Can do.

  Thus, the outer shape of the lens 3 can be formed between the effective pixel region of the sensor chip 2 that is generally rectangular and the transparent substrate 4 that is a rectangle slightly wider than the effective pixel region. Therefore, the transparent substrate 4 having the same size as the effective pixel area of the sensor chip 2 can be employed, and the small solid-state imaging device 10 can be provided.

  In the solid-state imaging device 10 of the present embodiment, the lens 3 includes an effective area formed in the effective pixel area of the sensor chip 2 and an ineffective area other than the effective area. The effective area of the lens 3 is The effective light beam in the imaging system is refracted and led to the effective pixel region of the sensor chip 2, while the ineffective region of the lens 3 is formed so as not to be involved in the effective light beam.

  Thereby, the light flux that has passed through the ineffective area of the lens 3 has a configuration that is not related to imaging, and the shape of the lens 3 in the ineffective area can be designed to an arbitrary shape. Therefore, for example, the molding die 22 can be easily molded, such as a structure in which the lens 3 is easily released from the molding die 22, and the solid-state imaging device 10 with high throughput and low cost can be provided.

  In the solid-state imaging device 10 of the present embodiment, the lens 3 has an inflection point between the cross-sectional shape of the effective region and the cross-sectional shape of the non-effective region, and has different curvatures or gradients. It can be assumed that it intersects the transparent substrate 4 surface in the effective region.

  Thereby, since the shape in the ineffective area | region of the lens 3 can be set freely, the design of the shaping | molding die 22 and the lens 3 can be simplified, and the solid-state imaging device 10 can be provided in a short period of time.

  Further, in the solid-state imaging device 10 of the present embodiment, the lens 3 may have a part of a circle whose tangent is the surface of the transparent substrate 4 in the cross-sectional shape of the ineffective region. it can.

  Accordingly, by changing the cross-sectional shape of the ineffective area of the lens 3 to a circle partially tangent to the surface of the transparent substrate 4, the outer shape of the lens 3 can be accommodated in the transparent substrate 4, and Since the thickness of the lens 3 at the end gradually decreases, the stress does not concentrate on the end at the time of mold release, and the mold release becomes easy. As a result, a high-throughput and low-cost solid-state imaging device can be provided.

  Further, in the solid-state imaging device 10 of the present embodiment, the lens 3 has a shape of a straight line SL1 in a direction away from the optical axis of the lens 3 as it approaches the sensor chip 2 from the lens 3 in the cross-sectional shape of the ineffective region. Can be part of.

  Thereby, by changing the cross-sectional shape of the ineffective area of the lens 3 to a straight line from the middle, the outer shape of the lens 3 can be accommodated in the transparent substrate 4, and the straight line SL1 and the lens 3 in the cross-sectional shape can be accommodated. The boundary with the curve can be made to function as a position adjustment marker with respect to the photographing apparatus 50 described later at the time of forming and inspecting the lens 3. As a result, it is possible to provide a low-cost and high-performance solid-state imaging device 10 that performs highly accurate position adjustment in a short time.

  In the solid-state imaging device 10 of the present embodiment, it is preferable that a silane coupling agent is applied to the surface of the transparent substrate 4 on the lens 3 side.

  Thereby, for example, the adhesive force between the transparent substrate 4 that is an inorganic material and the lens 3 that is an organic material can be improved by the silane coupling agent, and the solid-state imaging device 10 with high environmental resistance can be provided.

  In the solid-state imaging device 10 of the present embodiment, it is preferable that an infrared wavelength cut filter (not shown) is provided on the lens 3 side of the transparent substrate 4.

  As a result, the solid-state imaging device 10 does not cause near-infrared light to be converted into an electrical signal and cause deterioration in image quality such as a decrease in resolution or image unevenness.

  Moreover, in the solid-state imaging device 10 of this Embodiment, it is preferable that the silane coupling agent is provided between the infrared wavelength cut filter which is not illustrated and the lens 3.

  Thereby, the adhesive force of the infrared wavelength cut filter which is an inorganic material and the lens 3 which is an organic material is improved by the silane coupling agent, and a solid-state imaging device having high environmental resistance can be provided.

  Moreover, in the solid-state imaging device 10 of this Embodiment, it is preferable that the lens 3 has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C.

  As a result, with the lens 3 mounted, the external connection terminal 9 of the solid-state imaging device 10 and the wiring on the substrate such as the FPC are melted and solidified by reflow processing, and the solid-state imaging device 10 is mounted on the substrate. be able to. Therefore, since the manufacturing process is simplified, the low-cost solid-state imaging device 10 can be provided.

  Further, in the method for manufacturing the solid-state imaging device 10 of the present embodiment, the third step includes the first process of filling the mold with a fluid curable resin having fluidity, and the application of light energy or thermal energy. And a second treatment for curing the energy curable resin.

  Thereby, the lens 3 can be formed using the molding die 22 filled with the energy curable resin. Therefore, convex surfaces of the lens 3 having a desired shape, such as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape, can be easily formed.

  In the method for manufacturing the solid-state imaging device 10 according to the present embodiment, it is preferable to perform the second process while confirming the position where the lens 3 is to be formed using the transparent mold 22.

  Thereby, since the energy curable resin filled in the mold 22 and the mold 22 are transparent, the center of the effective pixel area of the solid-state imaging device 10 passes through the transparent mold 22 filled with the energy curable resin. Can be visually recognized. That is, it is possible to form the lens 3 at a desired position on the transparent substrate 4 while confirming the position using, for example, a camera. For this reason, the center of the lens 3 can be mechanically accurately arranged right above the center of the effective pixel region.

  Therefore, the production yield of the solid-state imaging device 10 can be improved.

[Embodiment 2]
The following will describe another embodiment of the present invention with reference to FIG. The configurations other than those described in the present embodiment are the same as those in the first embodiment. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment are given the same reference numerals, and explanation thereof is omitted.

  The configuration of the solid-state imaging device 30 according to the present embodiment will be described below with reference to FIG. FIG. 5 is a plan view showing the configuration of the solid-state imaging device 30.

  In the solid-state imaging device 30 of the present embodiment, as shown in FIG. 5, the resin lens 33 is formed on the transparent substrate 4 and covers the effective pixel region 11. The distance between the outer shape of the effective pixel region 11 and the outer shape of the transparent substrate 4 is larger than that of the first embodiment. The center of the effective pixel region 11 is the optical center and the diameter is the diagonal distance of the effective pixel region 11. Circles as curves can be accommodated within the interval.

  In other words, the outer shape of the lens 33 formed on the solid-state imaging device 30 is substantially a circle, so that the design of the ineffective diameter region of the lens 33 is not complicated. In addition, because the lens shape and outer shape do not have inflection points, there is no stress concentration at the time of mold release after curing the photo-curable resin 3 ', preventing lens cracking and scratching at the time of mold release. can do.

  In FIG. 5, the transparent substrate 4 and the effective pixel region 11 are illustrated as squares, but in reality, they are often rectangular. In this case, the lens outer shape is an ellipse as a curve. That is, the transparent substrate 4 and the effective pixel region 11 are not limited to a square but may be a rectangle. Further, the lens outer shape is not limited to a circle but may be an ellipse.

  Thus, in the solid-state imaging device 30 of the present embodiment, the lens 3 can be assumed to have a curved outer periphery when viewed from the optical axis direction of the lens 3.

  Thereby, for example, when the lens 3 is formed by curing with a fluid photocurable resin 3 ′, the inner shape of the molding die 22 used when forming the lens 3 does not have a sharp inflection point. Since it is continuous, chipping hardly occurs at the time of cutting and it can be easily manufactured. Therefore, it is possible to provide the solid-state imaging device 30 that can achieve low cost in the production of the mold 22.

[Embodiment 3]
The following will describe still another embodiment of the present invention with reference to FIG. The configurations other than those described in the present embodiment are the same as those in the first embodiment and the second embodiment. For convenience of explanation, members having the same functions as those shown in the drawings of Embodiment 1 and Embodiment 2 are given the same reference numerals, and explanation thereof is omitted.

  The configuration of the solid-state imaging device 40 of the present embodiment will be described below with reference to FIG. FIG. 6 is a plan view showing the configuration of the solid-state imaging device 40.

  In the solid-state imaging device 40 of the present embodiment, as shown in FIG. 6, the resin lens 43 is formed on the transparent substrate 4 and covers the effective pixel region 41. The center of the effective pixel area 41 is shifted from the center of the transparent substrate 4. Since the center of the lens 43 coincides with the center of the effective pixel area 41, there is an area protruding from the transparent substrate 4 as it is.

  For this reason, in the present embodiment, the lens 43 can solve the above problem by setting the outer shape to the straight line SL2 on the transparent substrate 4 in the direction protruding from the transparent substrate 4.

  The reason why the centers of the transparent substrate 4 and the effective pixel area 41 are shifted includes a case where a groove for preventing condensation or a circuit for signal processing is formed outside the effective pixel area 41.

  That is, in the present embodiment, the outer shape of the lens 43 formed on the solid-state imaging device 40 is configured by a circle and one straight line SL2.

  Note that the outer shape of the lens 43 is not limited to the shape described above. For example, the lens 43 may be formed of an ellipse, a plurality of curves and a plurality of straight lines, or a straight substrate. 4 and the effective pixel region 41 are preferably designed as appropriate according to the relative shape.

  Thus, in the solid-state imaging device 40 of the present embodiment, the lens 43 is formed so that the outer periphery of the lens 43 includes one or more straight lines SL2 when viewed from the optical axis direction of the lens 43.

  Accordingly, by using the straight line SL2 rather than the curve as the outer periphery of the lens 43, the center of the lens 43 can be easily recognized, and as a marker for position adjustment with the imaging device 50 described later at the time of forming and inspecting the lens 43. It is possible to provide a low-cost and high-performance solid-state imaging device 40 that can function and that performs highly accurate position adjustment in a short time.

  Further, in the solid-state imaging device 40 of the present embodiment, the lens 43 has the outer periphery of the lens 43 formed by a curve and one or more straight lines SL2 when viewed from the optical axis direction of the lens 43.

  Thus, the outer shape of the lens 43 can be formed between the effective pixel region of the sensor chip 2 that is generally rectangular and the transparent substrate 4 that is a rectangle slightly wider than the effective pixel region. Therefore, the transparent substrate 4 having the same size as the effective pixel area of the sensor chip 2 can be employed, and a small solid-state imaging device 40 can be provided.

[Embodiment 4]
The following will describe still another embodiment of the present invention with reference to FIG. The configurations other than those described in the present embodiment are the same as those in the first to third embodiments. For convenience of explanation, members having the same functions as those shown in the drawings of Embodiments 1 to 3 are given the same reference numerals, and descriptions thereof are omitted.

  The configuration of the imaging device 50 according to the present embodiment will be described below with reference to FIG. FIG. 7 is a cross-sectional view illustrating a configuration of the imaging device 50 including the solid-state imaging device 10 described in the first embodiment, for example.

  As shown in FIG. 7, the imaging device 50 includes a solid-state imaging device 10, an imaging lens 51 composed of a flat surface and two convex surfaces, and a light shield formed by sandwiching the flat surface of the imaging lens 51. And a spacer 53 for adjusting and fixing the distance in the optical axis direction between the imaging lens 51 and the sensor chip 2.

  The imaging lens 51 is an optical path delimiter that demarcates the optical path of light incident on the solid-state imaging device 10. The light shielding unit 52 is a stop of the imaging lens 51 and suppresses the incidence of stray light among the light incident on the imaging lens 51. The spacer 53 is formed near the outer periphery of the sealing resin 5.

  The external connection terminal 9 provided on the bottom surface of the solid-state imaging device 10 is electrically connected to a conductor wiring formed on a wiring board (not shown). Further, the conductor wiring is electrically connected to an image processing apparatus (not shown) bonded on the wiring board. That is, the imaging device 50 is electrically connected to the image processing device via the conductor wiring.

  Therefore, the light incident from the imaging lens 51 enters the effective pixel region 11 on the sensor chip 2 through the lens 3, the transparent substrate 4, and the air layer 7. The light incident on the effective pixel region 11 is converted into an electric signal and transmitted to the image processing apparatus. The image processing device forms an image based on the transmitted electrical signal.

  Since the imaging device 50 of the present embodiment has the above configuration, it has the same functions and operations as the solid-state imaging device 10.

  Note that the imaging device 50 may include the solid-state imaging device 30 or the solid-state imaging device 40 instead of the solid-state imaging device 10.

  As described above, the imaging device 50 according to the present embodiment includes the solid-state imaging devices 10, 30, and 40 described in the first to third embodiments.

  Thereby, the solid-state imaging device which can suppress that the incident light to the peripheral part of the sensor chip 2 becomes dark, suppress the stray light which enters the effective pixel area of the sensor chip 2, and can obtain high reliability. An imaging device 50 having 10.30.40 can be provided.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and the technical means disclosed in different embodiments can be appropriately combined. Such embodiments are also included in the technical scope of the present invention.

  According to the present invention, it is possible to provide a solid-state imaging device that achieves downsizing and thinning using a simple and inexpensive method and that has high reliability (environment resistance) and performance. The present invention can be applied to all optical devices for forming an image based on the light of the above. In particular, it is effective to apply to a camera module for a mobile phone, a digital camera, or the like. It can be used for the purpose of downsizing, thinning and widening the device.

(A) is a top view which shows one Embodiment of the solid-state imaging device in this invention, (b) is the sectional view on the AA 'line of (a), (c) is the said solid-state imaging device. It is an AA 'line sectional view showing one process for forming. (A) is sectional drawing which expands and shows the lens corner edge part of Fig.1 (a), (b) is sectional drawing which expands and shows the shape of the lens edge part of Fig.1 (a), (C) is an enlarged cross-sectional view showing another shape of the lens side end portion of FIG. 1 (a). It is a graph which shows the temperature change in the lead-free solder reflow mounting process in the manufacturing method of the said solid-state imaging device. It is sectional drawing explaining each process in the manufacturing method of the said solid-state imaging device. It is a top view which shows other embodiment of the solid-state imaging device in this invention. It is a top view which shows other embodiment of the solid-state imaging device in this invention. It is sectional drawing which shows the structure of the imaging device provided with the said solid-state imaging device. (A) shows the reference form of the solid-state imaging device in the present invention, and is a plan view showing the solid-state imaging device 30 when the configuration of the conventional solid-state imaging device shown in FIG. 12 is combined with the conventional imaging device shown in FIG. 4B is a cross-sectional view taken along line XX ′ in FIG. 4A, and FIG. 4C is a cross-sectional view taken along line YY ′ in FIG. (A) is sectional drawing in XX 'of FIG. 8 (a) for demonstrating one process among the manufacturing processes of the said solid-state imaging device, (b) is a manufacturing process of a solid-state imaging device, It is sectional drawing in YY 'of Fig.8 (a) for demonstrating one process, (c) is sectional drawing which expands and shows the lens edge part vicinity of (b). It is sectional drawing which shows the structure of the conventional solid-state imaging device. It is sectional drawing which shows the structure of the other conventional solid-state imaging device. It is sectional drawing which shows the structure of the conventional imaging device. It is explanatory drawing explaining each process in the manufacturing method of the conventional solid-state imaging device shown in FIG. It is sectional drawing which shows the structure of the other conventional imaging device. (A) is sectional drawing which shows the solid-state imaging device which combined the solid-state imaging device shown in FIG. 12, and the solid-state imaging device shown in FIG. 14, (b) is a resin lens of the solid-state imaging device shown in (a). It is sectional drawing which expands and shows an edge part vicinity.

Explanation of symbols

1 sensor substrate 2 sensor chip (solid-state imaging device)
3 Lens (optical element)
3 'light curable resin (energy curable resin)
3a Lens corner edge 3b Lens edge 4 Transparent substrate (transparent plate)
DESCRIPTION OF SYMBOLS 5 Sealing resin 6 Spacer 7 Air layer 8 Bonding wire 9 External connection terminal 10 Solid-state imaging device 11 Effective pixel area 21 Rod 22 Mold 23 Camera 24 UV lamp 30 Solid-state imaging device 33 Lens (optical element)
40 Solid-state imaging device 41 Effective pixel area 43 Lens (optical element)
50 Imaging Device 51 Imaging Lens 52 Light Shield 53 Spacer SL1 Straight Line SL2 Straight Line CL Circle

Claims (18)

A solid-state imaging device in which an effective pixel region is formed;
A transparent plate disposed so as to face the effective pixel region of the solid-state imaging device;
A sealing resin for sealing a part of the solid-state imaging device and a side wall of the transparent plate;
An optical element composed of a transparent resin,
The optical element is formed on the transparent plate, and the outer periphery of the optical element is formed closer to the optical axis center side than the outer periphery of the transparent plate when viewed from the optical axis direction of the optical element. A solid-state imaging device.   2. The optical element is formed so that an outer periphery of the optical element is outside an effective pixel region of the solid-state imaging element when viewed from the optical axis direction of the optical element. The solid-state imaging device described in 1.   The solid-state imaging device according to claim 2, wherein the transparent plate is disposed so as to exist inside a planar shape of the solid-state imaging element.   The solid-state imaging device according to claim 3, wherein the optical element has a curved outer periphery when viewed from the optical axis direction of the optical element.   The solid-state imaging device according to claim 3, wherein the optical element is formed so that an outer periphery of the optical element includes one or more straight lines when viewed from the optical axis direction of the optical element. .   4. The solid-state imaging according to claim 3, wherein the optical element has an outer periphery formed of a curved line and one or more straight lines when viewed from the optical axis direction of the optical element. apparatus. The optical element is
The effective area formed in the effective pixel area of the solid-state imaging device, and other non-effective area,
The effective area of the optical element refracts an effective light beam in the imaging system and guides it to the effective pixel area of the solid-state imaging element,
7. The solid-state imaging device according to claim 4, wherein the ineffective area of the optical element is formed so as not to be involved in an effective light beam.   The optical element has an inflection point between the cross-sectional shape of the effective area and the cross-sectional shape of the ineffective area and has different curvatures or gradients, and intersects the transparent plate surface in the ineffective area. The solid-state imaging device according to claim 7.   9. The solid-state imaging device according to claim 7, wherein the optical element has a part of a circle whose tangent is the transparent plate surface in a cross-sectional shape of the ineffective area. .   In the cross-sectional shape of the ineffective area, the optical element has a straight line in a direction away from the optical axis of the optical element as a part of the shape as it approaches the solid-state imaging element from the optical element. The solid-state imaging device according to claim 7, 8 or 9.   The solid-state imaging device according to claim 1, wherein a silane coupling agent is applied to a surface of the transparent plate on the optical element side.   The solid-state imaging device according to claim 7, wherein an infrared wavelength cut film is provided on the optical element side of the transparent plate.   The solid-state imaging device according to claim 12, wherein a silane coupling agent is provided between the infrared wavelength cut film and the optical element.   The solid-state imaging according to any one of claims 1 to 13, wherein the optical element has a visible light transmittance of 80% or more under a temperature condition of -60 ° C to 270 ° C. apparatus.   An imaging device comprising the solid-state imaging device according to claim 1. A first step of disposing a transparent plate so as to face the effective pixel region of the solid-state image sensor and to be present inside the planar shape of the solid-state image sensor;
A second step of sealing a part of the solid-state imaging device and a side wall of the transparent plate with a sealing resin;
A third step of forming an optical element composed of a transparent resin on the transparent plate,
A method of manufacturing a solid-state imaging device, wherein the optical element and the sealing resin are not in contact with each other in the third step. The third step includes
A first treatment of filling a mold with an energy curable resin having fluidity;
The method for manufacturing a solid-state imaging device according to claim 16, further comprising: a second process for curing the energy curable resin by applying light energy or thermal energy.   18. The method of manufacturing a solid-state imaging device according to claim 17, wherein the second process is performed while confirming a position where the optical element is to be formed using a transparent mold.

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