JP4153016B1 - Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging device using the solid-state imaging device - Google Patents

Abstract

To provide a solid-state imaging device that achieves miniaturization and thickness reduction and imparts performance using a simple and inexpensive method.
A solid-state imaging device 10 according to the present invention includes a sensor chip 1 having an effective pixel region 1a formed thereon, and a planar dimension that is disposed so as to face the effective pixel region 1a and is equivalent to the effective pixel region 1a. A glass plate 3 having a spacer, and a spacer 5 that is adjacent to the effective pixel region 1a and surrounds the effective pixel region 1a, and holds the sensor chip 1 and the glass plate 3 in parallel. A sealing resin 7 for sealing a part of the sensor chip 1, the side wall of the glass plate 3, and the side wall of the spacer 5, and an optical element 9 formed on the glass plate 3 and made of a transparent resin. And part of the optical element 9 is in contact with the surface of the sealing resin 7.
[Selection] Figure 1

Description

  The present invention relates to a solid-state imaging device that captures an image of a subject using a solid-state imaging device on which a light-receiving element is formed, a manufacturing method thereof, and an imaging apparatus using the solid-state imaging device. More specifically, the present invention relates to a solid-state imaging device used for a digital camera, a video camera, and the like, a manufacturing method thereof, and an imaging device using the solid-state imaging device.

  An imaging device such as a digital camera or a video camera converts light from a subject into an electrical signal, and forms image data of the subject based on the electrical signal. The imaging apparatus includes an imaging unit (solid-state imaging device) that recognizes light from a subject imaged by an imaging lens. The light recognized by the solid-state imaging device is converted into an electrical signal by a solid-state imaging device inside the solid-state imaging device and output as the electrical signal. Based on the output electrical signal, an image of the subject is formed in the processing unit of the photographing apparatus.

  As a conventional configuration of the solid-state imaging device as described above, a configuration in which the solid-state imaging device is housed in a unit case provided with a parallel flat plate-like protective glass can be exemplified. The protective glass prevents entry of foreign matter (dust, dust, etc.) into the unit case and contact of other members with the solid-state imaging device in the manufacturing process of the solid-state imaging device without preventing light from entering. In other words, the protective glass is a member that protects the solid-state image sensor from adverse effects on the solid-state image sensor (attachment of foreign matter or damage to the element due to physical causes).

  The angle of light incident on the solid-state imaging device when the solid-state imaging device having the above configuration is applied to an imaging apparatus will be described with reference to FIG.

  As shown in FIG. 12, the light transmitted through the imaging lens reaches the solid-state imaging device 102 through the protective glass 101. An imaginary line O-O ′ represents the central axis of the light transmitted through the imaging lens.

  Of the light incident on the solid-state imaging device 102, the light incident on a position away from the virtual line O-O 'has an angle that spreads outward from the virtual line O-O'. When light enters the protective glass 101, it is refracted inward, but when emitted from the protective glass 101, it is emitted as light parallel to the incident light on the protective glass 101. That is, light that has an angle away from the imaginary line O-O ′ enters the solid-state image sensor 102 as it is located outside the solid-state image sensor 102.

  If the incident light has an angle that leaves the imaginary line OO ′ to the outside, the incident efficiency to the solid-state imaging device 102 is lowered, and thus it is difficult to efficiently convert the light into an electric signal. Become.

  When a solid-state imaging device having a parallel flat plate-like protective glass as described above is applied to an imaging device, and the solid-state imaging device is downsized and thinned, the light transmitted through the imaging lens is inevitably widened. To do. Due to the widening of the light, the difference in incident efficiency between the central portion and the peripheral portion of the solid-state imaging device is further enlarged, and thus there arises a problem that the peripheral portion becomes extremely dark when the formed image is viewed.

  When a transparent plane-parallel plate-like member is used as a protective member for a solid-state imaging device, the following problems occur in addition to the above problems.

  A CCD (Charge Coupled Device) and a C-MOS device, which are often used as a solid-state imaging device, can convert light having a relatively wide wavelength into an electrical signal. For example, a CCD or C-MOS device can convert light having a wavelength in the near infrared region (750 to 2500 nm) as well as the visible light region into an electrical signal.

  However, when it is used as a normal camera, it is not meaningless that the solid-state imaging device converts near infrared rays into an electric signal, but it causes deterioration in image quality such as a decrease in resolution and image unevenness. For this reason, normally, near-infrared rays are cut out of incident light by inserting colored glass or the like as an infrared cut filter into an optical system such as a video camera. In recent years, in order to reduce the cost and size of an apparatus, a method of cutting (reflecting) near infrared rays by forming an inexpensive dielectric multilayer film on a protective glass as an infrared cut filter has been widely employed.

  Here, the dielectric multilayer film has an angle dependency in which the range of the wavelength of the reflected light changes depending on the angle of the incident light. As the incident angle of light increases, the wavelength range of light that can be reflected by the dielectric multilayer film shifts to a shorter wavelength. That is, the larger the incident angle of light, the more easily the dielectric multilayer film reflects light having a shorter wavelength than that of near infrared rays. In other words, the larger the incident angle of light, the lower the function of the dielectric multilayer film as an infrared cut filter.

  For this reason, the image formed based on the electrical signal converted by the solid-state imaging device becomes bluish as it goes from the center to the periphery. Therefore, it is impossible to sufficiently prevent deterioration in image quality such as a decrease in resolution and image unevenness.

  In order to solve the above-described problem of deterioration in image quality in the peripheral portion of an image, an image sensor unit (solid-state imaging device) in which a lens is formed on the upper part of a protective glass is disclosed in Patent Document 1. Patent Document 2 discloses a method for manufacturing a dielectric multilayer filter having a resin focusing lens and a solid-state imaging device (solid-state imaging device).

  A solid-state imaging device of Patent Document 1 will be described with reference to FIG. 13, and a solid-state imaging device of Patent Document 2 and a method for manufacturing a dielectric multilayer filter will be described with reference to FIGS. 14 and 15.

  As illustrated in FIG. 13, the solid-state imaging device disclosed in Patent Document 1 protects the unit case 112, the sensor chip 114 disposed in the unit case 112, the lens unit 116 formed on the sensor chip 114, and the sensor chip 114. Protective glass 115 is provided. On the light incident surface side of the solid-state imaging device, a crystal filter 111 for splitting the light beam into two by the birefringence of the crystal and an imaging lens 110 for imaging light from the subject are provided. An imaginary line O represents the central axis of light incident from the imaging lens 110.

  Here, the lens unit 116 includes one microlens 116 a formed for each of a plurality of light receiving pixels constituting the sensor chip 114. The protective glass 115 includes a flat glass plate 115a and a lens portion 115b, and the glass plate 115a and the lens portion 115b are integrally formed. The lens portion 115b is formed on the light incident surface side of the glass plate 115a. The lens portion 115b formed on the protective glass 115 has an afocal lens function that does not have an imaging function.

  Since the solid-state imaging device of Patent Document 1 includes the lens portion 115b, the light incident on the peripheral portion of the sensor chip 114 is refracted so as to be substantially parallel to the virtual line O. Accordingly, it is possible to suppress a decrease in light incident efficiency in the peripheral portion of the sensor chip 114 and achieve uniformity of the entire obtained image.

  As shown in FIG. 14, the solid-state imaging device 130 of Patent Document 2 includes a unit case 136, a sensor chip 135 disposed in the unit case 136, and a dielectric multilayer filter formed on the sensor chip 135. 131 is provided. The dielectric multilayer filter 131 includes a light transmissive substrate 134 that protects the sensor chip 135, a dielectric multilayer film 133 formed on a flat surface of the light transmissive substrate 134, and a resin focusing lens 132.

  An optical system 140 for imaging light from a subject is provided on the light incident surface side of the solid-state imaging device 130. An arrow L0 indicates a path of light incident on the center of the sensor chip 135, and an arrow L2 indicates a path of light incident near the outer periphery of the sensor chip 135.

  The light traveling on the arrow L2 is refracted so as to be more parallel to the arrow L0 on the light incident surface of the resin focusing lens 132. Therefore, the light emitted from the resin focusing lens 132 and incident on the dielectric multilayer film 133 becomes nearly parallel to the light traveling on the arrow L0 as compared to before entering the resin focusing lens 132. That is, even light incident near the outer periphery of the solid-state imaging device 130 can be incident on the dielectric multilayer film 133 at a relatively vertical angle.

  For this reason, the solid-state imaging device 130 can cut unnecessary infrared rays by appropriately correcting the angle of light incident near the outer periphery thereof. Therefore, it is possible to prevent a decrease in resolution and color unevenness of the entire image.

  Furthermore, as shown in FIG. 15, the manufacturing method of the dielectric multilayer filter of Patent Document 2 includes manufacturing processes such as S101 to S105 below.

  A large-area light-transmitting substrate 134 and a convex mold 137 are prepared (S101). A dielectric multilayer film 133 is formed in advance on one surface of the light-transmitting substrate 134 having a large area. The convex mold 137 has a concave cavity 137a for transferring the convex surface of the resin focusing lens 132 and a flat forming surface 137b.

  A light-transmitting substrate 134 having a large area and a convex mold 137 are overlapped. The photocurable resin 138 is filled either before or after the light transmissive substrate 134 and the convex mold 137 are overlaid. Then, the photocurable resin 138 is cured by irradiating ultraviolet rays from the light transmitting substrate 134 side (S102).

  The convex mold 137 is separated from the transparent substrate 134 after the ultraviolet irradiation (S103). Thus, a transmissive substrate 134 (formed body) on which a plurality of resin focusing lenses 132 are formed can be manufactured.

  The dielectric multilayer filter 131 having the plurality of resin focusing lenses 132 formed thereon is cut along the cutting line 139 (S104).

  As a result, a plurality of dielectric multilayer filters 131 can be manufactured (S105).

  As described above, if the dielectric multilayer filter manufacturing method of Patent Document 2 is adopted, a plurality of dielectric multilayer filters 131 capable of efficiently cutting near-infrared rays regardless of the incident position of light are provided once. It can manufacture simply by the manufacturing process. Furthermore, since the lens is made of a photocurable resin, unlike the case where the lens is formed using glass, it is easy to mold the lens surface into a desired shape.

  Here, a camera module to be mounted on a camera-equipped mobile phone, a PDA (Personal Digital Assistant), or the like has been increasingly demanded for miniaturization and thinning in order to achieve miniaturization and thinning of the product itself.

  However, in the solid-state imaging device shown in FIGS. 13 and 14, the members (protective glass 115 and dielectric multilayer filter 131) for protecting the solid-state imaging element are formed larger than the planar size (size) of the solid-state imaging element. I have to. The reason for this will be described below.

  In order to capture an image of a subject using an imaging device, it is necessary to output an electrical signal obtained by converting light from the subject by a solid-state imaging device to a processing unit outside the solid-state imaging device. . Naturally, wiring is necessary for outputting electric signals. As this wiring, the solid-state imaging device and the processing unit are usually connected by a bonding wire. Since the bonding wires are connected so as to protrude outside the solid-state image sensor, the unit case needs to be formed sufficiently larger than the solid-state image sensor. As a result, since the protective glass 115 and the dielectric multilayer filter 131 have to be enlarged, the above-described solid-state imaging device and solid-state imaging device have a structure unsuitable for downsizing.

  Further, in order not to make the bonding wire contact with the protective glass 115 and the dielectric multilayer filter 131, etc., it is necessary to form the unit case sufficiently high, so it is difficult to reduce the thickness of the solid-state imaging device as described above. is there.

  Here, Patent Document 3 discloses a photographing apparatus that can be easily reduced in size and thickness. The structure of the imaging device of Patent Document 3 will be described below with reference to FIG.

  As shown in FIG. 16, the imaging apparatus of Patent Document 3 includes a wiring board 142 in which a plurality of conductor wirings 150 are formed on both sides, an image processing DSP 144 formed on the wiring board 142, and a DSP 144 via a spacer 143. A solid-state imaging device 141 adhered to the sealing substrate, a sealing resin 148 for sealing a part of the wiring board 142 and the side surface of the solid-state imaging device 141, a lens holder 152 fixed on the sealing resin 148, and the solid-state imaging device 141 And a lens 151 that functions as an optical path delimiter that demarcates the optical path to the solid-state imaging device 141. The sensor chip 141 and DSP 144 and the wiring board 142 are electrically connected via the conductor wiring 150 and the bonding wire 149.

  The solid-state imaging device 141 includes a sensor chip 146, a translucent lid 145 disposed so as to face the effective pixel region of the sensor chip 146, and an adhesive portion 147 that bonds the sensor chip 146 and the light transmissive substrate 145. It is configured. A bonding wire 149 for electrically connecting the wiring substrate 142 and the sensor chip 146 is connected to the outside of the bonding portion 147. Further, an adhesive portion 147 is disposed along the effective pixel region on the sensor chip 146. Furthermore, the light-transmitting lid portion 145 and the sensor chip 146 having a plane size smaller than the plane size of the sensor chip 146 are bonded via the bonding portion 147.

  Since the effective pixel region on the sensor chip 146 can be sealed using the light-transmitting lid portion 145 having a small planar size, the light-transmitting lid portion 145 does not interfere with the wired bonding wire 149. Therefore, the translucent lid 145 can be disposed in the vicinity of the sensor chip 146.

That is, a space for avoiding contact between the bonding wire 149 and another member becomes unnecessary. The solid-state imaging device 141 can be reduced in size and thickness as much as it is not necessary to provide the space. As a result, the entire photographing apparatus can be easily reduced in size and thickness.
JP-A-11-97659 (published on April 9, 1999) JP 2005-234038 (published September 2, 2005) JP 2004-296453 (released on October 21, 2004)

  However, when the solid-state imaging devices of Patent Documents 1 and 2 are applied to an imaging device, the following problems occur.

  In Patent Documents 1 and 2, the protective member (115 or 131) on which the lens is formed covers the unit case. If the protective member is not attached so as to be parallel to the solid-state image sensor, the central axis of the light beam incident on the solid-state image sensor and the central axis of the lens do not coincide with each other, and the lens has a large angle (tilted). . The deviation between the two central axes enlarges the aberration of light incident on the solid-state image sensor, and causes distortion and blurring of the formed image. In order to attach the protective member accurately, it is important that the shape of the unit case is formed with high accuracy. However, to increase the shape of the unit case with high accuracy, it is necessary to avoid an increase in cost in the manufacturing process. Can not.

  In addition, in the manufacturing method of the dielectric multilayer filter 131 of Patent Document 2, it is described that after the dielectric multilayer film 133 is formed on one or both surfaces of the light transmissive substrate 134, the resin focusing lens 132 is formed. Yes.

  Normally, the dielectric multilayer film is composed of 40 to 50 multilayer films. When the dielectric multilayer film is formed only on one surface of the light transmissive substrate, the light transmittance is caused by the film stress of the dielectric multilayer film. The substrate is warped. When the resin focusing lens is formed on the light transmissive substrate with warping, the warp of the light transmitting substrate is transmitted to the resin focusing lens, and in particular, the peripheral portion of the resin focusing lens is deformed. If the resin focusing lens is deformed, the incident angle of light cannot be properly corrected. Therefore, the deformation of the resin focusing lens greatly reduces the yield rate of products.

  For example, the film stress can be released (reduced to a negligible level) by dicing the light-transmitting substrate on which the dielectric multilayer film is formed before forming the resin focusing lens. However, if dicing is performed first, it becomes impossible to simplify the manufacturing process and reduce the cost.

  In addition, when the dielectric multilayer film is formed on both surfaces of the light transmissive substrate, the film stress of the dielectric multilayer film formed on both surfaces cancels each other, so even if dicing is performed after the resin focusing lens is formed. Good. However, when a dielectric multilayer film is formed on the surface of the light transmissive substrate facing the solid-state imaging device, the following problems occur.

  The dielectric multilayer film has countless cracks that do not affect the function of reflecting infrared rays. Since the dielectric multilayer film is easily affected by a temperature change, the cracks may expand with a temperature change caused by driving the device after the manufacturing process or mounting. Due to the expansion of the cracks (a plurality of cracks are connected), micro-peeling of the film occurs to such an extent that it hardly affects the function of reflecting infrared rays. If a small piece that has caused micro-peeling of the dielectric multilayer film adheres to the effective pixel region, a stain is formed on the image.

  That is, when the dielectric multilayer film is formed on both surfaces of the light transmissive substrate, the yield rate and long-term reliability of the solid-state imaging device are lowered. Furthermore, if dielectric multilayer films are formed on both surfaces of the light-transmitting substrate, it is a matter of course that miniaturization and thinning of the solid-state imaging device are hindered.

  Here, when the technique described in Patent Document 1 or Patent Document 2 is applied to the solid-state imaging device 141 (see FIG. 16) of Patent Document 3, the work complexity and cost increase due to the production of the unit case, and the minute peeling of the dielectric multilayer film are performed. At the same time, the solid-state imaging device can be reduced in size and thickness.

  The problems of Patent Document 1 and Patent Document 2 can be solved for the following reasons (1) to (3). (1) Since the translucent cover portion only needs to be slightly larger than the size of the effective pixel region, a space for avoiding contact between the bonding wire and another member is not required. (2) A lens is provided on the upper surface. Since the formed translucent lid and the solid-state imaging device are fixed through a very thin adhesive portion, the central axis of the incident light and the central axis of the lens are not greatly inclined, and (3) Since the fragmented translucent lid is used, the lens is not deformed by the film stress of the dielectric multilayer film.

  When a resin lens is applied to the solid-state imaging device 141 of Patent Document 3, the following advantages are obtained when the manufacturing method described with reference to FIG. 15 is adopted. By using the manufacturing method shown in FIG. 15, a reduction in manufacturing cost can be achieved. In addition, since the size of the resin lens can be made equal to that of the translucent lid, the incidence of stray light can be suppressed. After the resin lens is formed on the upper part of the transparent cover part with a large area, it is divided by dicing, so that the warp of the transparent cover part due to film stress, which occurs when a dielectric multilayer film is formed, is suppressed. Can do.

  A solid-state imaging device 141 'to which a resin lens is applied will be described below with reference to FIG. FIG. 17A is a cross-sectional view illustrating a configuration of a solid-state imaging device 141 ′ to which a resin lens is applied and a state of light incident on an end portion of the lens, and FIG. 17B is a cross-sectional view of FIG. It is sectional drawing to which the edge part vicinity of this lens was expanded.

  As shown in FIG. 17A, the solid-state imaging device 141 ′ includes a substrate 142 having an external connection terminal 150 formed in the lower portion, a sensor chip 146 formed on the upper surface of the substrate 142, and an effective pixel region of the sensor chip 146. The translucent lid 145, the sensor chip 146 and the translucent lid 145 that are arranged to face each other, the adhesive layer 147 that bonds the translucent lid 145, a part of the substrate 142, the side wall of the sensor chip 146, and the side wall of the adhesive part are sealed. A sealing resin 148 to be stopped and a resin lens 153 covering the translucent lid 145 are provided. An imaging lens 151 is provided above the resin lens 153.

  The air layer 154 is a sealed space surrounded by the sensor chip 146, the adhesive layer 147, and the translucent lid 145. The substrate 142 and the sensor chip 146 are electrically connected via a wire 149.

  Here, the resin lens 153 has the same surface shape as the translucent lid portion 145, and has almost the same surface shape as the effective pixel region of the sensor chip 146. The side walls of the resin lens 153 and the translucent lid 145 form a flat surface. The reason why the side walls of the resin lens 153 and the translucent lid 145 form a flat surface is that the resin lens 153 and the translucent lid 145 are separated by dicing.

  Since it is manufactured using the above-described method, the solid-state imaging device 141 ′ can achieve reduction in manufacturing cost, suppression of stray light incidence, and suppression of warpage of the translucent lid 145.

  However, since the end portion of the resin lens 153 has a flat side wall, light is reflected on the side wall. Light 170 incident near the end of the resin lens 153 is reflected by the side wall and enters the effective pixel region as stray light.

  The vicinity of the end of the resin lens 153 protrudes slightly outward from directly above the effective pixel region.

  Therefore, as shown in FIG. 17B, the light 170 incident near the end of the resin lens 153 enters the resin lens 153 as refracted light 170a refracted on the convex surface of the resin lens 153. The refracted light 170 a becomes reflected light 170 b reflected on the side wall of the end portion of the resin lens 153 and the side wall of the translucent lid 145 exposed from the sealing resin 148. The reflected light 170b is incident on the effective pixel area as light unnecessary for image formation. As a result, the image quality of the image formed using the solid-state imaging device 141 'is degraded.

  Here, as described above, in the solid-state imaging device 141 ′, a part of the side wall of the translucent lid 145 is exposed from the sealing resin 148. This is to prevent the sealing resin 148 from entering the upper surface of the translucent lid 145.

  When the sensor chip 146 and the translucent lid 145 are sealed with resin, if the sealing resin 148 having an excessive amount of fluidity is filled, the sealing resin 148 easily enters the upper surface of the translucent lid 145. Become. Therefore, in the resin sealing, the fluid sealing resin 148 is filled in a smaller amount than is necessary for sealing the sensor chip 146, the translucent lid 145, and the like.

  Therefore, a part of the side wall of the translucent lid 145 is exposed from the sealing resin 148. In general, a portion of the side wall of the translucent lid 145 having a height of about 50 to 100 μm from the upper surface of the translucent lid 145 is exposed from the sealing resin 148.

  As described above, when the lens 153 is formed in the solid-state imaging device disclosed in Patent Document 3, stray light incident on the effective pixel region increases due to light reflection on the side wall of the translucent lid 145 and the side wall of the end of the lens 153. To do. In particular, in a solid-state imaging device that does not include the sealing resin 148, the stray light incident on the effective pixel region in which the entire side wall of the translucent lid 145 functions as a light reflecting surface further increases.

  The present invention has been made in view of the above problems, and an object of the present invention is to achieve downsizing and thinning using a simple and inexpensive method, and high reliability (environment resistance) and performance. And a manufacturing method thereof.

  Another object of the present invention is to provide a photographing apparatus equipped with a solid-state imaging device that achieves downsizing and thinning using a simple and inexpensive method and has high reliability (environment resistance) and performance. Is to provide.

In order to solve the above-described problem, the solid-state imaging device of the present invention is disposed at least so as to face the effective pixel region and is equivalent to the effective pixel region. A transparent plate having a planar dimension, a part of the solid-state imaging device, and a sealing resin that seals a side wall of the transparent plate; a lens formed on the transparent plate and made of a transparent resin; And at least a part of the lens is in contact with the sealing resin.

In the above configuration, in order to cover the entire effective pixel region, a part of the lens formed on the transparent plate is further in contact with the upper surface of the sealing resin. That is, the lens is formed so that a part of the lens protrudes from the transparent plate and straddles the upper surface of the sealing resin. Therefore, it is not necessary to divide by dicing to form a lens .

Since the lens is not divided by dicing, the end of the lens does not have a side wall that reflects light. As a cross-sectional shape of the lens, for example, it has a substantially arc shape like a normal lens. Therefore, light incident on the vicinity of the end portion of the lens, as described with reference to FIG. 17, not to cause reflection at the side wall of the transparent plate exposed from the end portion and the sealing resin of the lens.

Since the light incident near the end of the lens is not reflected, stray light can be prevented from entering the effective pixel region.

In addition, the opening that allows light to enter the solid-state imaging device by having the above-described configuration is almost the same size as the effective pixel region because it is the same as the planar size of the transparent plate. The lens is also formed on the outer side of the transparent plate (part of the sealing resin), but the light is incident on the lens covering the outside of the transparent plate (outside the effective area of the lens), directly under the lens In a certain sealing resin, the light is absorbed. That is, unnecessary light incident outside the effective area of the lens does not enter the effective pixel area or can be ignored.

  In addition, since the transparent plate for protecting the solid-state image sensor has a planar dimension equivalent to that of the effective pixel region, the solid-state image sensor can be easily downsized. Furthermore, it is not necessary to arrange wiring for outputting an electrical signal converted in the solid-state imaging device between the transparent plate and the effective pixel region of the solid-state imaging device. That is, since the transparent plate and the effective pixel area of the solid-state image sensor can be arranged closer to each other, the solid-state image sensor can be reduced in height (thinned).

Further, as described above, the solid-state imaging device and the transparent plate on which the lens is formed can be disposed at closer positions. Therefore, in order to arrange the solid-state imaging device and the transparent plate in parallel, the solid-state imaging device and the transparent plate may be fixed via a thin member having a uniform thickness. For this reason, the central axis of the light beam incident on the solid-state image sensor and the central axis of the lens can be easily matched.

Moreover, an energy curable resin can be adopted as a material constituting the lens . That is, a method of forming a lens using a mold as shown in FIG. 15 can be used. Therefore, a convex surface of a lens having a desired shape (aspherical lens having power, a lens having a Fresnel shape, a diffractive lens having a fine relief shape, or the like) can be easily formed.

Since a lens having a desired shape can be formed at a desired position, an image with low aberration and high resolution can be formed using a solid-state imaging device.

In the production of the solid-state imaging device of the present invention, it is not possible to form a plurality of lenses on the transparent plate having a large area, making except lens is completed, a plurality of states connected by the sealing resin and the substrate A lens can be formed for the solid-state imaging device. What is necessary is just to divide | segment into each solid-state imaging device after formation of a lens . Therefore, a lens having a desired shape can be easily formed, and a plurality of solid-state imaging devices including the lens can be manufactured in a single manufacturing process.

  From the above, there is an effect that it is possible to provide a solid-state imaging device that achieves miniaturization and thickness reduction and imparts high performance using a simple and inexpensive method.

In order to solve the above-described problem, the solid-state imaging device of the present invention is disposed at least so as to face the effective pixel region and is equivalent to the effective pixel region. A transparent plate having a planar dimension and a lens formed on the transparent plate and made of a transparent resin are provided, and at least a part of the lens is in contact with the side wall of the transparent plate.

In the above structure, part of the lens is in contact with the side wall of the transparent plate. In other words, the side wall of the transparent plate is covered with a lens . When the side surface of the transparent plate is covered with a lens , most of the light incident on the side surface of the transparent plate is not reflected but is transmitted to the lens . That is, since reflection of light incident near the end of the lens is suppressed, stray light incident on the effective pixel region can be reduced.

Furthermore, since the lens is in contact with the upper surface and the side wall of the transparent plate, as compared with the case where the lens is in contact only with the upper surface of the transparent plate, adhesion between the lens and the transparent plate is robust. That is, since the contact area between the lens and the transparent plate is large, the adhesive force between the lens and the transparent plate is improved.

Further, since the lens is in contact with the upper surface and the side wall of the transparent plate, it occurs when the solid-state imaging device according to the lens made of resin as the lens was exposed to high temperature, can suppress the release from the transparent plate of the lens . Exposure of the solid-state imaging device having a lens made of resin in high temperature conditions, because the and the transparent plate made of resin lenses have different thermal expansion coefficients, resin lenses are subjected to thermal stress.

The thermal stress received by the resin lens includes not only a shearing force but also a tensile force. Resin has a strong repulsive force (shrinking force) so as not to be deformed against the tensile force. For this reason, when a resin lens is formed so as to be in contact with the upper surface and side wall of the transparent plate (so as to wrap around from the upper surface of the transparent plate to the side wall), the transparent plate is tightened by the resin lens when exposed to high temperature conditions Receive the power to be able to.

Therefore, the adhesion between the transparent plate and the resin lens is improved. Since the adhesion between the transparent plate and the resin lens is improved, peeling of the lens from the transparent plate, which occurs when a solid-state imaging device including the resin lens is exposed under a high temperature condition, can be suppressed.

  Examples of the high temperature condition include a lead-free solder reflow process in the mounting process of the solid-state imaging device. When lead-free solder reflow processing is used as a method for mounting a solid-state image sensor, the mounting cost of the solid-state image sensor can be reduced.

In addition, the opening through which light can enter the solid-state imaging device has the same size as the effective pixel region because it is the same as the planar size of the transparent plate. That is, unnecessary light incident outside the effective area of the lens does not enter the effective pixel area or can be ignored.

  In addition, since the transparent plate for protecting the solid-state image sensor has a planar dimension equivalent to that of the effective pixel region, the solid-state image sensor can be easily downsized. Furthermore, it is not necessary to arrange wiring for outputting an electrical signal converted in the solid-state imaging device between the transparent plate and the effective pixel region of the solid-state imaging device. That is, since the transparent plate and the effective pixel area of the solid-state image sensor can be arranged closer to each other, the solid-state image sensor can be reduced in height (thinned).

Further, as described above, the solid-state imaging device and the transparent plate on which the lens is formed can be disposed at closer positions. Therefore, in order to arrange the solid-state imaging device and the transparent plate in parallel, the solid-state imaging device and the transparent plate may be fixed via a thin member having a uniform thickness. For this reason, the central axis of the light beam incident on the solid-state image sensor and the central axis of the lens can be easily matched.

Moreover, an energy curable resin can be adopted as a material constituting the lens . That is, a method of forming a lens using a mold as shown in FIG. 15 can be used. For this reason, it is possible to form an image with low aberration and high resolution by using the solid-state imaging device.

In the manufacture of the solid-state imaging device of the present invention, the lens can be formed on a plurality of solid-state imaging devices that are manufactured by removing the lens and are connected by a sealing resin or a substrate. What is necessary is just to divide | segment into each solid-state imaging device after formation of a lens . Therefore, a lens having a desired shape can be easily formed, and a plurality of solid-state imaging devices including the lens can be manufactured in a single manufacturing process.

  As described above, the same effects as those of the above-described solid-state imaging device can be obtained.

Further, in the solid-state imaging device of the present invention, a portion of the said lens, via the adhesion enhancing section for improving the physical adhesion or chemical bonding force between the lens and the sealing resin The surface of the sealing resin is preferably adhered.

The inventors of the present application have found that the following points should be noted when the lens is formed so that a part thereof is in contact with the sealing resin.

A lens made of an organic material has sufficient adhesion to a transparent plate made of an inorganic material, but is made of an organic material and sealed physically and chemically inactive. It does not have a very strong adhesion to resin. Further, the lens and the sealing resin are usually made of materials having different thermal expansion coefficients. Therefore, it should be considered that the lens may peel off at the contact portion with the sealing resin when the temperature condition in which the solid-state imaging device is placed changes.

Examples of the change in temperature condition in which the solid-state imaging device is placed include a heating / cooling process in a manufacturing process and a change in use environment after mounting on a product. For this reason, in order to improve the yield rate and long-term reliability of the solid-state imaging device, it is considered preferable to improve the physical adhesive force or chemical bonding force between the lens and the sealing resin.

  The said structure WHEREIN: The adhesive force improvement part may be the shape which the surface of the sealing resin has, or the structure provided to the surface of the sealing resin. The adhesion improving portion is, for example, minute irregularities on the surface of the sealing resin and / or a functional group.

For example, when the adhesion improving portion is a minute unevenness on the surface of the sealing resin, the contact area between the lens and the surface of the sealing resin increases, and further, the minute unevenness acts as a hook portion by biting into the lens. Therefore, the physical adhesive force between the lens and the sealing resin can be improved.

Ar plasma treatment can be mentioned as a method for forming minute irregularities on the surface of the sealing resin. By subjecting the surface of the sealing resin to Ar plasma treatment, the surface of the resin sealing can be roughened. Here, a release agent is attached to the surface of the sealing resin in order to separate the solid-state imaging device that has been sealed in the resin sealing from the mold. The mold release agent attached to the surface of the sealing resin reduces the adhesive force between the sealing resin and the lens . Since the release agent adhering to the surface of the sealing resin can be removed by the Ar plasma treatment, it contributes to an improvement in the adhesive force between the sealing resin and the lens .

In addition, for example, when the adhesion improving portion is a functional group such as a hydroxyl group, a carbonyl group, or a carboxyl group, the surface of the sealing resin can be modified into a chemically activated state. For this reason, the chemical bonding force between the sealing resin and the lens can be improved via the functional group.

Examples of the method for imparting a functional group such as a hydroxyl group, a carbonyl group, and a carboxyl group to the surface of the sealing resin include corona discharge in the atmosphere, O ₂ plasma treatment, and CH ₄ plasma treatment. By applying corona discharge, O ₂ plasma treatment or CH ₄ plasma treatment in the atmosphere to the surface of the sealing resin, functional groups such as a hydroxyl group, a carbonyl group, and a carboxyl group are imparted to the surface of the sealing resin. If functional groups such as a hydroxyl group, a carbonyl group, and a carboxyl group are added to the surface of the sealing resin, chemical activity can be provided to the surface of the sealing resin.

Incidentally, adhesion enhancing section, minute irregularities on the surface of the sealing resin, and optionally a functional group, the sealing resin and the lens and physical adhesion and chemical bonding force can be improved at the same time .

The adhesion enhancing section as illustrated above, by forming between the lens and the sealing resin, thereby improving the physical adhesion or chemical bonding force between the lens and the sealing resin .

The reason why the lens is easily peeled off from the sealing resin is that, as described above, the thermal expansion coefficients of the lens and the sealing resin are different from each other. Change in the usage environment of the product after the product is mounted on the product (temperature change due to seasonal change). By forming the adhesive force improving portion between the lens and the sealing resin, it is possible to suppress peeling of the lens from the sealing resin after the manufacturing process and the final product.

  From the above, in addition to the above effects, high reliability (environment resistance) and product yield can be improved.

  Moreover, the solid-state image sensor of this invention WHEREIN: The said adhesive force improvement part may be the roughened surface of the said sealing resin.

As described above, if the surface of the sealing resin is roughened, the adhesion between the lens and the sealing resin can be improved.

  Moreover, the solid-state image sensor of this invention WHEREIN: The functional group provided to the surface of the said sealing resin may be sufficient as the said adhesive force improvement part.

Examples of the functional group in the above configuration include a hydroxyl group, a carbonyl group, and a carboxyl group. If a hydroxyl group, a carbonyl group, and a carboxyl group are added to the surface of the sealing resin, the chemical bonding force (reactivity) between the lens formed of various conventionally known transparent resins and the sealing resin can be improved.

  Examples of transparent resins having strong bonding strength with hydroxyl groups, carbonyl groups and carboxyl groups provided on the surface of the sealing resin include modified acrylate resins, methacrylate composite resins, polysiloxane resins, silicone resins, silicone rubbers, and silica. A compounding composite type epoxy resin, a transparent polyimide, etc. can be mentioned.

Furthermore, when a hydroxyl group, a carbonyl group and a carboxyl group are imparted to the surface of the sealing resin, all of the conventionally known various silane coupling agents used for bringing an inorganic substance and an organic substance into close contact are usually composed of an organic substance. It can be used to improve the bonding force between the lens and the sealing resin.

Examples of a preferable combination of a conventionally known silane coupling agent and a lens material include the following two types:
(1) A combination of a modified acrylate resin and a methacrylate composite resin and an amino or methacryloxy silane coupling agent; and (2) a polysiloxane resin, a silicone resin, a silicone rubber, a silica-containing composite epoxy resin, Further, a combination of a transparent polyimide or the like and an amino or epoxy silane coupling agent can be given.

As described above, if a functional group is imparted to the surface of the sealing resin, the adhesion between the lens and the sealing resin can be improved.

In the solid-state imaging device of the present invention, it is preferable that a silane coupling agent is further provided between the transparent plate and the lens .

By providing a silane coupling agent that can improve the bonding force with the lens on the transparent plate, the adhesion between the transparent plate and the lens can be further strengthened.

For example, the silane coupling agent that can improve the transparent plate and the lens includes an epoxy-based or amino-based silane coupling agent.

Originally, the transparent plate and the lens have strong adhesion. Furthermore, peeling of the whole lens is suppressed by improving the adhesive force between the transparent plate and the lens . If, even when the sealing resin and the lens is peeled off, the upper at least a transparent plate may remain covered by the lens.

  Therefore, the production yield of the solid-state image sensor and the reliability of the final product including the solid-state image sensor can be further improved.

In the solid-state imaging device of the present invention, it is preferable that the lens has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C.

If the resin constituting the lens is denatured under the above temperature conditions, the solid-state imaging device cannot be corrected appropriately. However, by having the above configuration, even when the lens is exposed to the above temperature condition, the lens function corrects the light incident on the solid-state image sensor so that the light enters the solid-state image sensor almost perpendicularly. Can be maintained.

Here, when a lens is not formed, the solid-state imaging device is usually mounted on the substrate by melting and solidifying the solder by reflow processing between the external connection terminal and the wiring on the substrate such as an FPC. After the reflow process, an imaging device (camera module) is manufactured by mounting an optical lens on the solid-state imaging device.

  For example, when mounting the solid-state imaging device on a flexible printed circuit (FPC) or the like, a lead-free solder reflow mounting process is performed with a temperature profile as shown in FIG.

  Before starting the heat treatment, the solid-state imaging device is placed on the substrate while aligning the solder and the external connection terminal of the solid-state imaging device. As shown in FIG. 18, before performing the main heating for dissolving the solder on the substrate, preheating is performed to raise the temperature to about 180.degree. Then, temperature is raised to 250 degreeC by this heating. And 250 degreeC which is the peak temperature of a reflow mounting process is maintained. When the solder is sufficiently melted, the heating is finished. The external connection terminal of the solid-state imaging device sinks into the melted solder. If it cools in this state, the electrical connection of a board | substrate and a solid-state imaging device will be completed.

When forming a lens on a transparent plate of a solid-state imaging device, two methods are conceivable as mounting methods using reflow processing.

The first is a method of forming a lens on a transparent plate after the solid-state imaging device is mounted on the substrate. In this method, it is necessary to prepare many types of apparatuses for forming lenses in accordance with the shape and size of the FPC (substrate). That is, since it is necessary to change the shape and size of the FPC in accordance with a device such as a mobile phone or a PDA, it is necessary to prepare an apparatus for forming lenses for only the types of devices to be manufactured. In other words, even in the case of forming the same shape of the lens, it is not possible to form a lens by the same process using the same device, causing an increase in complexity and manufacturing costs of the manufacturing process.

The second is a method of mounting a solid-state imaging device on an FPC or the like by performing a reflow process after forming a lens on a transparent plate.

  However, when a resin that can constitute a lens is exposed to a temperature of 150 ° C. or higher, the resin lens is deformed. For this reason, in a state where the resin lens is formed on the transparent plate, the solid-state imaging device cannot be mounted on the substrate using the reflow process.

  Further, the resin lens and the sealing resin expand and contract by heating and cooling in the reflow mounting process. Since the materials constituting the resin lens and the sealing resin are different, the thermal expansion coefficients are also different. That is, the expansion rate and contraction rate of the resin lens and the sealing resin differ depending on the heating and cooling in the reflow mounting process. Therefore, the resin lens is easily peeled off from the sealing resin.

Here, for example, if an energy curable resin such as a silicone resin having an alkyl group and / or a phenyl group and an organic-inorganic hybrid silicone resin in which a carbon skeleton and a silicone skeleton are hybridized is used, the above-described lens can be used. It is possible to suppress lens deformation and modification under temperature conditions.

More preferable materials for constituting the lens include a modified acrylate resin, a methacrylate composite resin, a polysiloxane resin, a silicone resin, a silicone rubber, a silica-containing composite epoxy resin, and a transparent polyimide. it can.

That is, by configuring the lens from the exemplified materials, the solid-state imaging device can be mounted on the substrate by reflow processing even in a state where the lens is formed on the transparent plate.

  Therefore, it is possible to provide a highly reliable solid-state imaging device using a cheaper and simpler method.

In the solid-state imaging device of the present invention, it is preferable that a part of the transparent plate is exposed from the lens .

Configuration in which a part of the transparent plate is exposed from the lens can be realized by the following method.

For example, when the planar shape of the transparent plate is a square, in the method of forming a lens using a mold as shown in FIG. 15, the flat portion of the mold closely contacts the four corners of the square transparent plate. In this state, the above configuration can be realized by curing the energy curable resin.

In the above example, since the flat portion of the mold is in close contact with the four corners of the square transparent plate, the center axis of the formed lens may be formed to be perpendicular to the flat surface of the transparent plate. Easy. As described above, it seems that the transparent plate and the solid-state imaging device are arranged in parallel.

That is, by having the above configuration, it is easy to form the lens so that the central axis of the lens is perpendicular to the solid-state imaging device.

In the solid-state imaging device of the present invention, the refractive index of the lens with respect to visible light is preferably 1.3 to 1.4.

Usually, in order to improve the light incident efficiency to the solid-state image sensor, an antireflection coating is applied to the light incident surface of the lens . The thermal expansion coefficient of the material for antireflection coating is about 0.1 to 0.01 times that of the resin constituting the lens . For this reason, in the heating / cooling process (particularly, the reflow process) included in the manufacturing process of the solid-state imaging device, the antireflection coating is cracked or peeled off. Since the incident efficiency is reduced at a location where the antireflection coating is cracked or peeled, unevenness occurs in the formed image.

  Examples of the method for performing the antireflection coating include a vacuum deposition method and a sputtering method. For example, when anti-reflection coating is performed after reflow processing, the coating must be applied to the solid-state imaging device mounted on the substrate, so that the size of the coating device is increased, the coating processing is complicated, and the processing time is extended. This leads to an increase in cost. In particular, if the coating method requires vacuum conditions, it is difficult to maintain the degree of vacuum in the coating apparatus.

Here, when the solid-state imaging device according to the present invention has the above-described configuration, reflection of light on the light incident surface of the lens can be suppressed to a level that does not affect the image quality of the formed image. That is, it is not necessary to apply an antireflection coating to improve the incidence efficiency.

  Therefore, there is an effect that the manufacturing process can be simplified and the manufacturing cost can be reduced.

In the solid-state imaging device of the present invention, it is preferable that the lens is formed with an overhang having a flat upper surface that is formed to the outer edge of the sealing resin toward the outside of the effective pixel region. .

For example, the overhang may be formed in a method of forming a lens by using a mold as shown in FIG. 15. In this case, the following method can be cited as a method for forming the overhang.

This is a method of forming a substantially spherical depression for forming a convex surface of a lens in a molding die and a flat depression around the depression, and filling an excessive amount of energy curable resin. The flat dent should just be formed so that the edge part may oppose the outer edge vicinity of sealing resin.

  The mold filled with the energy curable resin is pressed against the transparent plate. Then, a part of the energy curable resin is pushed out from the substantially spherical depression toward the flat depression around the depression. Furthermore, a part of the energy curable resin is pushed out of the mold from the surrounding flat depression.

At this time, bubbles generated when the mold filled with the energy curable resin is brought into contact with the transparent plate are pushed out into the flat depression of the mold using an energy curable resin that does not fit in the substantially spherical depression. be able to. Furthermore, the air bubbles that have been pushed into the flat recess can be pushed out of the mold. The bubbles need only be pushed out from the convex surface of the lens , and need only be pushed out into the flat depression of the mold or the outside of the depression.

Thus, if the lens has an overhanging outward, when the lens is formed using the energy curable resin, bubbles can be prevented from entering the portion constituting the convex surface.

  Here, in order to manufacture an imaging device using a solid-state imaging device, a lens that is an optical path delimiter is arranged in the solid-state imaging device. The center of the lens is disposed so as to face the center of the effective pixel region of the solid-state image sensor. If the center of the lens is not exactly opposite to the center of the effective pixel region, the optical path of light passing through the lens (incident on the solid-state imaging device) is shifted. Since the deviation of the optical path causes distortion and unevenness in the image formed by the photographing apparatus, the correct arrangement of the lenses affects the yield rate of the photographing apparatus.

  The lens is usually attached to the vicinity of the outer edge of the sealing resin in the solid-state imaging device via a member (lens fixing portion) that fixes the lens from its side surface. In order to attach the lens so that the center of the lens and the center of the effective pixel area are accurately opposed to each other, a location (attachment location) for attaching the lens fixing portion in the solid-state imaging device is formed in parallel with the solid-state imaging device. Need to be.

  Here, in the above configuration, the fact that the overhang is formed up to the vicinity of the outer edge of the sealing resin can be said in other words that the overhang is formed so as to reach a part of the attachment portion of the lens fixing portion.

Therefore, in the solid-state imaging device according to the present invention, since the protruding lens is formed up to the vicinity of the outer edge of the sealing resin, it is easy to form the attachment portion of the lens fixing portion in parallel with the solid-state imaging device. Further, it is possible to correct the mounting position of the lens fixing portion so as to be parallel to the solid-state imaging device.

  This is because the upper surface of the attachment location in the solid-state imaging device can be formed using a mold. If the mounting surface of the lens fixing portion in the solid-state imaging device is formed by filling the mold with the energy curable resin, the mounting surface can be easily leveled or parallel to the solid-state imaging device.

Furthermore, the lens and its overhang are integrally formed. Therefore, the contact area between the lens and the sealing resin can be increased. That is, the physical adhesive force between the lens and the sealing resin can be improved. For this reason, deformation of the end portion of the lens and peeling from the sealing resin can be further suppressed.

  From the above, there is an effect that the production yield of the solid-state imaging device with improved reliability (environment resistance) can be further improved.

  Moreover, it is preferable that the imaging device of the present invention includes the solid-state imaging device.

  By having the above-described configuration, it is possible to provide a photographing apparatus that achieves downsizing and thinning using a simple and inexpensive method and that has high reliability (environment resistance) and performance.

In order to solve the above problems, the method for manufacturing a solid-state imaging device according to the present invention includes a step of disposing at least a transparent plate having a planar dimension equivalent to the effective pixel region so as to face the effective pixel region of the solid-state imaging device. When the steps of the side wall of the resin sealing portion and the transparent plate of at least said solid imaging element, said transparent plate, and on a part of the sealing resin, the lens formed of a transparent resin formed The process of including.

In the above configuration, the lens is also formed on a part of the sealing resin. That is that a portion of the lens from the transparent plate so as to protrude, the lens is formed. Therefore, it is not necessary to divide by dicing to form a lens .

Since the lens is not divided by dicing, the end of the lens does not have a side wall that reflects light. As a cross-sectional shape of the lens, for example, it has a substantially arc shape like a normal lens. Therefore, light incident on the vicinity of the end portion of the lens, as described with reference to FIG. 17, not to cause reflection at the side wall of the transparent plate exposed from the end portion and the sealing resin of the lens.

Since the light incident near the end of the lens is not reflected, stray light can be prevented from entering the effective pixel region.

  That is, the same effect as the solid-state imaging device is achieved.

In order to solve the above-described problem, a method for manufacturing a solid-state imaging device according to the present invention includes at least a transparent plate having a planar dimension equivalent to the effective pixel region so as to face the effective pixel region of the solid-state imaging device. A step of fixing to the imaging device, and a step of forming a lens made of a transparent resin on an upper portion of the transparent plate and a part of a side wall of the transparent plate.

In the above configuration, the lens is in contact with a part of the side wall of the transparent plate. That is, a part of the blue side wall of the transparent plate is covered with the lens .

Most of the light incident on the side surface of the transparent plate is not reflected but is transmitted into the lens . That is, since reflection of light incident near the end of the lens is suppressed, stray light incident on the effective pixel region can be reduced.

  That is, the same effect as the solid-state imaging device is achieved.

Further, in the solid-state imaging device of the present invention, the step of forming the lens, the process to fill the energy curable resin having fluidity in a mold; curing the energy-curable resin by the application of and light energy or thermal energy process It is preferable to contain.

By having the said structure, a lens can be formed using the shaping | molding die filled with energy curable resin. Therefore, a convex surface of a lens having a desired shape (aspherical lens having power, a lens having a Fresnel shape, a diffractive lens having a fine relief shape, or the like) can be easily formed.

In the solid-state imaging device of the present invention, a transparent mold is used as the mold, and the treatment for curing the energy curable resin is performed while confirming the position where the lens is to be formed through the transparent mold. It is preferable.

In the above configuration, since the energy curable resin and the mold filled in the mold are transparent, the center of the effective pixel area of the solid-state imaging device can be visually recognized through the mold filled with the energy curable resin. That is, the lens can be formed at a desired position on the transparent plate while confirming the position using a camera or the like. For this reason, the center of the lens can be accurately arranged right above the center of the effective pixel region.

  Therefore, the production yield of the solid-state imaging device can be improved.

In the solid-state imaging device of the present invention, it is preferable that the mold is filled with an energy curable resin exceeding the necessary amount for forming the lens in the process of filling the mold with the energy curable resin.

When an excessive amount of energy curable resin is filled in the mold and the mold is pressed against the transparent plate, a part of the energy curable resin is pushed out of the mold. If air bubbles are included in the energy curable resin, the air bubbles can be excluded to the outside together with the energy curable resin extruded to the outside of the mold. That is, the formation of bubbles in the lens can be suppressed.

  Therefore, the production yield of the solid-state imaging device can be improved.

As described above, according to the present invention, a portion of the lens by the lens is formed in contact with the side walls of the sealing resin or the transparent plate, set the shape of the end portion of the lens freely Or the side wall of the transparent plate can be covered with a lens , so that the conventional problem that stray light (reflected light of light incident near the end of the lens ) enters the effective pixel region can be solved. Therefore, there is an effect that it is possible to provide a solid-state imaging device that achieves downsizing and thinning by using a simple and inexpensive method and imparts high performance.

  Embodiments according to the present invention will be described below with reference to FIGS. In the following description, the same members and components are denoted by the same reference numerals. The names and functions are also the same. Therefore, detailed description thereof will not be repeated.

[Embodiment 1]
A configuration and a forming method of the solid-state imaging device 10 according to an embodiment of the present invention will be described below with reference to FIGS. FIG. 1A is a plan view showing the configuration of the solid-state imaging device 10, and FIG. 1B is a cross-sectional view taken along line AA ′ showing the configuration of the solid-state imaging device 10, and FIG. ) Is a cross-sectional view taken along the line BB ′ showing the configuration of the solid-state imaging device 10. FIG. 2 is a cross-sectional view taken along the line CC ′ of FIG. 1 for explaining one process among the manufacturing processes of the solid-state imaging device 10. 3A is a cross-sectional view showing a state in which light is incident on the end 9a of the lens 9 of the solid-state imaging device 10 in FIG. 1, and FIG. 3B is an end of the lens 9 in FIG. It is sectional drawing to which 9a vicinity was expanded.

As shown in FIG. 1B, a solid-state imaging device 10 according to this embodiment includes a sensor substrate 13 having an external connection terminal 17 formed in the lower portion, and a sensor chip 1 (solid-state imaging device) formed on the sensor substrate 13. ), A glass plate 3 (transparent plate) disposed so as to face the effective pixel region 1a of the sensor chip 1, a spacer 5 for holding the sensor chip 1 and the glass plate 3 in parallel, a part of the sensor substrate 13, and a sensor A part of the chip 1, a sealing resin 7 that seals the side wall of the glass plate 3 and the side wall of the spacer 5, and a resin lens 9 that covers the glass plate 3 are provided.

  The surface of the sealing resin 7 is subjected to Ar plasma treatment. Due to the Ar plasma treatment, minute irregularities (adhesion improving portions) are formed on the surface of the sealing resin 7, and the solid-state imaging device 10 is peeled from the mold after resin sealing from the surface of the sealing resin 7. The mold release agent is removed. The effective pixel area 1 a is formed in an area on the sensor chip 1 sandwiched between the spacers 5. The lens 9 is obtained by filling a mold with a photocurable resin 9 ′ that is cured by irradiation with ultraviolet rays and curing the resin by ultraviolet irradiation.

  A space surrounded by the effective pixel region 1 a, the glass plate 3, and the spacer 5 of the sensor chip 1 forms a sealed air layer 11. The glass plate 3 is exposed to moisture, dust, dust, and the like entering the air layer 11, and damage to the effective pixel region 1a caused by other members or parts of the manufacturing apparatus coming into contact with the effective pixel region 1a in the manufacturing process. Thus, the effective pixel region 1a is protected. The spacer 5 is formed by thermosetting a thermosetting resin sandwiched between the sensor chip 1 and the glass plate. For this reason, the air layer 11 is completely sealed.

  The sensor chip 1 and the sensor substrate 13 are electrically connected by a bonding wire 15. That is, the sensor chip 1 can output an electrical signal to the outside via the bonding wire 15, the sensor substrate 13, and the external connection terminal 1. The bonding wire 15 is also sealed with the sealing resin 7, and the sealing resin 7 prevents contact between the bonding wires 15 and disconnection of the bonding wire 15.

  Here, the bonding wire 15 is connected to the outside of the region of the sensor chip 1 where the spacer 5 is formed. For this reason, if the glass plate 3 has a planar dimension (size) that can cover the effective pixel region 1a, the effective pixel region 1a can be protected.

  Furthermore, since it is not necessary to arrange the bonding wire 15 inside the air layer 11, the height of the air layer 11 (spacer 5) may be such that the glass plate 3 does not contact the effective pixel area 1a. That is, since it is not necessary to arrange the bonding wire 15 inside the air layer 11, the solid-state imaging device 10 can be reduced in size and thickness (reduced in height).

  Since the lens 9 formed on the glass plate 3 is formed in a convex lens shape, the light incident on the lens 9 can be refracted so that the angle of the light approaches a right angle. The farther the position where the light is incident is from the center of the effective pixel region 1a, the farther the angle of the light is from the vertical. Since the effective pixel region 1a recognizes incident light and converts it into an electric signal, the efficiency decreases as the angle of the incident light increases from the right angle. For this reason, the lens 9 needs to cover the entire surface of the effective pixel region 1a in order to increase the light incident efficiency at the outer peripheral portion of the effective pixel region 1a.

  As is apparent from the drawing, the end portion 9a of the lens 9 protrudes from the glass plate 3 and is bonded to a part of the sealing resin 7 (see FIGS. 1A and 3A). ).

  As described above, the glass plate 3 only needs to have a size sufficient to secure a space for bonding with the sensor chip 1 by the spacer 5 and to cover the effective pixel region 1a. In order to reduce the size of the solid-state imaging device 10, the size of the glass plate 3 is almost the same as the size of the effective pixel region 1a. Since there is almost no difference in size between the effective pixel region 1 a and the glass plate 3, if the entire effective pixel region 1 a is covered with the lens 9, the end 9 a of the lens 9 inevitably protrudes from the glass plate 3. That is, the end 9a of the lens 9 and the sealing resin 7 are bonded.

  By adhering the end 9a of the lens 9 and the sealing resin 7, stray light incident on the effective pixel region can be suppressed. The reason for this will be described with reference to FIGS.

  As shown in FIG. 3A, the light emitted from the imaging lens 62 that collects light from the subject includes light 20 that is incident near the end of the lens 9.

  As shown in FIG. 3B, when the light 20 enters the lens 9, the light 20 travels inside the lens 9 as refracted light 20 a refracted on the convex surface of the lens 9.

  A part of the refracted light 20 a reaches the sealing resin 7 directly from the inside of the lens 9. The refracted light 20a that has reached the sealing resin 7 is absorbed by the sealing resin 7 that does not have optical transparency. A part of the refracted light 20a reaches the sealing resin 7 directly from the inside of the lens 9 because the lens 9 does not have a side wall at the end 9a and is formed outside the glass plate 3. Because it is.

  A part of the refracted light 20 a enters the glass plate 3 from the inside of the lens 9. The refracted light 20a incident on the glass plate 3 passes through the side wall of the glass plate 3 and enters the lens 9 again. The refracted light 20 a that has entered the lens 9 again reaches the sealing resin 7. As described above, the refracted light 20 a that has reached the sealing resin 7 is absorbed by the sealing resin 7. The reason why the refracted light 20 a passes through the side wall of the glass plate 3 is that the lens 9 having a refractive index close to that of the glass plate 3 is formed so as to cover the side wall of the glass plate 3. The side wall of the glass plate 3 covered with the lens 9 does not function as a light reflecting surface.

  As described above, since the end 9 a of the lens 9 and the sealing resin 7 are bonded, the light 20 incident on the vicinity of the end 9 a of the lens 9 is reflected from the inside of the lens 9 and the glass plate 3. (Without changing the angle). For this reason, the light 20 is absorbed by the sealing resin 7. That is, the light 20 unnecessary for forming an image incident on the end 9a of the lens 9 does not enter the effective pixel region.

  Therefore, since stray light incident on the effective pixel region is reduced, it is possible to suppress deterioration in the image quality of an image formed using the solid-state imaging device 10.

  As described above, the end 9a of the lens 9 is bonded to a part of the sealing resin 7, but the adhesive force between the lens 9 and the sealing resin 7 is small. This is due to the following two reasons. (1) Since the lens 9 is formed after the sealing resin 7 is formed by compression using a mold, the sealing resin 7 does not have chemical activity when the lens 9 is formed. (2) A release agent is attached to the surface of the sealing resin 7 so that the sealing resin 7 and a mold for forming the sealing resin 7 are easily peeled off after the resin sealing is finished. Furthermore, since the lens 9 and the sealing resin 7 are made of different resins, they have different thermal expansion coefficients.

  Therefore, when the lens 9 is simply formed on the sealing resin 7, the end of the lens 9 is changed by a heating / cooling process in the mounting process of the solid-state imaging device 10 or a change in environmental temperature in which a product incorporating the solid-state imaging device 10 is used. The part 9a is peeled off from the sealing resin 7. When the end portion 9a of the lens 9 is peeled from the sealing resin 7, the lens 9 is deformed.

  Here, as described above, the surface of the sealing resin 7 of the solid-state imaging device 10 according to the present embodiment is roughened (fine unevenness (adhesion improving portion) is formed) by plasma treatment, and the sealing resin 7 The mold release agent on the surface has been removed. For this reason, the wettability of the fluid energy curable resin constituting the lens 9 with respect to the surface of the sealing resin 7 is improved. Furthermore, the contact area between the lens 9 and the sealing resin 7 is increased. Furthermore, the minute unevenness serves as an anchor for the resin constituting the lens 9.

  As described above, in the solid-state imaging device 10 according to the present embodiment, since the minute unevenness is formed on the surface of the sealing resin 7 and the release agent is not attached, the physical relationship between the lens 9 and the sealing resin 7 is achieved. Adhesive strength is improved. Therefore, the solid-state imaging device 10 according to the present embodiment can suppress the peeling of the lens 9 in the heating / cooling process in the manufacturing process and the peeling of the lens 9 due to a change in the usage environment of the mounted product.

  That is, it is possible to provide the solid-state imaging device 10 that achieves downsizing and thinning, and has high reliability (environment resistance) and performance.

In this embodiment, in order to improve the physical adhesive force between the sealing resin 7 and the lens 9, irregularities are formed on the surface of the sealing resin 7 by Ar plasma treatment, and the release agent is formed from the surface of the sealing resin 7. However, the present invention is not limited to this. For example, the surface of the sealing resin 7 may be imparted to the surface of the sealing resin 7 by treating the surface of the sealing resin 7 with corona discharge in the atmosphere, O ₂ plasma, or CH ₄ plasma. . By imparting a functional group such as a hydroxyl group, a carbonyl group, or a carboxyl group to the surface of the sealing resin 7, the chemical bonding force between the sealing resin 7 and the lens 9 can be improved. Further, by simultaneously improving the physical adhesive force and the chemical bonding force between the sealing resin 7 and the lens 9, the peeling of the lens 9 from the sealing resin 7 can be further suppressed.

  Other characteristic points of the solid-state imaging device 10 of the present embodiment will be described below with reference to FIG.

  As shown in FIG. 1A, a solid-state imaging device 10 according to an embodiment of the present magazine includes a sealing resin 7 that covers a part of the side surface and the upper surface of the solid-state imaging device 10, a glass plate 3 surrounded by the sealing resin 7, A resinous lens 9 formed on the glass plate 3 and an effective pixel region 1a on which light transmitted through the lens 9 and the glass plate 3 enters are provided. Around the four corners on the upper surface of the glass plate 3 constitute an exposed portion 3 a exposed from the lens 9, and an end portion end portion 9 a of the lens 9 is bonded to the sealing resin 7.

  In the effective pixel region 1a, one set of opposing sides has a length W1, and the other set of sides has a length W2. On the upper surface of the glass plate 3, one set of opposite sides has a length W3, and the other set of sides has a length W4. The difference between the length W1 and the length W3, or the difference between the length W2 and the length W4 is equal to the width of the spacer 5. That is, the size (W3 × W4) of the upper surface of the glass plate 3 is obtained by adding the size of the upper surface of the spacer 5 to the size (W1 × W2) of the effective pixel region 1a. And the size of the effective pixel region 1a are almost the same.

  Since the size of the upper surface of the glass plate 3 and the size of the effective pixel region 1a are almost the same, when the lens 9 is formed so as to cover the entire effective pixel region 1a, the end 9a of the lens 9 protrudes from the glass plate 3. The lens 9 does not have to cover the entire upper surface of the glass plate 3. As described above, the glass plate 9 has the exposed portion 3 a exposed from the lens 9.

  In the present embodiment, the lens 9 is composed of a photocurable resin 9 ′ that is cured by ultraviolet irradiation. The lens 9 is formed by filling the depression of the mold 19 with the photocurable resin 9 ′ and irradiating the ultraviolet rays with the flat portion of the mold 19 in contact with the glass plate 3 and the sealing resin 7 ( See FIG.

  The lens 9 has a configuration for correcting the angle of light incident on the solid-state imaging device 10 so as to approach a right angle, and is formed so that light transmitted through the center of the lens 9 is incident on the effective pixel region 1a at a right angle. It is necessary to In order to form the lens 9 so that the angle of the incident light can be appropriately corrected, it is necessary to bring the flat portion of the mold 19 (the portion surrounded by the broken line in FIG. 2) into contact with the surface parallel to the effective pixel region 1a. is there.

  The glass plate 3 is bonded to the sensor chip 1 via the spacer 5 so as to face the effective pixel region 1a. Since the glass plate 3 has a parallel plane shape and the spacer 5 has a very thin structure having a uniform thickness, the upper surface of the glass plate 3 is parallel to the effective pixel region 1a.

  Since the lens 9 is formed in a state where the flat portion of the mold 19 is in contact with the upper surface of the glass plate 3 parallel to the effective pixel region 1a, the light transmitted through the center of the lens 9 is accurately transmitted to the effective pixel region 1a. Can be incident at right angles. That is, since the glass plate 3 has the exposed portion 3a from the lens 9, the mounting accuracy of the lens 9 can be increased.

  In FIG. 1C, the area where the end 9a of the lens 9 is bonded to the sealing resin 7 is smaller than in FIG. This is because the shape of the upper surface of the glass plate 3 has a rectangle in which W4 is slightly longer than W3. Similarly, the effective pixel region 1a has a rectangular shape in which W2 is slightly longer than W1. In the present embodiment, the solid-state imaging device 10 in which the effective pixel region 1a (the upper surface of the glass plate 3) has a rectangular shape is described. However, the shape of the effective pixel region 1a (the upper surface of the glass plate 3) is appropriately changed as necessary. do it.

  The main configuration of the solid-state imaging device 10 according to the present embodiment has been described above. Hereinafter, a more preferable configuration of the solid-state imaging device 10 and a configuration that can be employed in the solid-state imaging device 10 will be described.

  In this embodiment, the lens 9 uses a photocurable resin 9 ′ that is cured by irradiation with ultraviolet rays. However, as a resin that constitutes the lens 9, a photocurable resin 9 ′ that is cured by irradiation with light other than ultraviolet rays is used. Further, it may be a thermosetting resin that is cured by application of thermal energy. The resin that constitutes the lens 9 according to the present invention is a resin that is cured by applying energy, and can be appropriately selected from conventionally known resins as long as it is a resin that transmits light after being cured. In this specification, the photocurable resin 9 ′ and the thermosetting resin may be collectively referred to as “energy curable resin” in some cases.

  The resin constituting the lens 9 according to the present invention has a visible light transmittance of 80% or more after being exposed to a temperature condition of −60 ° C. to 270 ° C., and can maintain the shape before the addition of the temperature condition. Those are preferred.

  By having the above-described configuration, the visible light transmittance and shape of the lens 9 are changed with respect to the heating / cooling process in the manufacturing process of the solid-state imaging device 10 and the change in the operating temperature environment of the product on which the solid-state imaging device 10 is mounted. It can be kept in a suitable state. In particular, a reflow process that requires heating to about 270 ° C. can be employed as a mounting method of the solid-state imaging device 10. Since reflow processing, for example, lead-free solder reflow processing, is an inexpensive and simple mounting process, the mounting cost of the solid-state imaging device 10 can be reduced.

  Examples of the resin that satisfies the above conditions include a silicone resin having an alkyl group and / or a phenyl group, and an energy curable resin such as an organic-inorganic hybrid silicone resin in which a carbon skeleton and a silicone skeleton are hybridized.

  It is preferable that the refractive index with respect to visible light which the lens 9 which concerns on this invention has is 1.3-1.4.

  By having the above configuration, it is not necessary to apply an antireflection coating to the light incident surface of the lens 9.

  For example, when a lens having a refractive index of 1.5 with respect to visible light is used, the reflectance of light perpendicularly incident on the lens is 4%. The lens 9 has a configuration for efficiently allowing light to enter the outer peripheral portion of the effective pixel region 1a. When a lens having the above reflectance is used as the lens 9, it is necessary to apply an antireflection coating. The antireflection coating is usually formed on the light incident surface of the lens 9 by vapor deposition or sputtering of an oxide-based inorganic substance. Since an oxide-based inorganic substance has a small linear expansion coefficient, it is likely to be cracked or peeled off by high-temperature treatment such as reflow treatment.

  On the other hand, if the refractive index with respect to visible light of the lens 9 is 1.3 to 1.4, the reflectance of light incident perpendicularly to the lens 9 can be suppressed to about 2%. Since the lens 9 is a lens through which the light that reaches the effective pixel region 1a finally passes, if the reflectance of the lens 9 can be suppressed to about 2%, sufficient light transmittance can be secured. That is, the amount of light incident on the effective pixel region 1a can be maintained to such an extent that image unevenness does not occur. Furthermore, if the light reflectance is reduced, the irregular reflection of light can be suppressed, so that the stray light can be prevented from entering the effective pixel region 1a. That is, it is possible to reliably suppress ghost and flare appearing in the image formed by the solid-state imaging device 10.

  Furthermore, if the refractive index with respect to visible light of the lens 9 is 1.3 to 1.4, it is not necessary to change the shape of the lens 9 extremely in order to compensate for the decrease in the refractive index.

  By having the said structure, the solid-state imaging device 10 which can provide a high quality image can be provided using a simpler method.

  The lens 9 is formed by filling the mold 19 with the energy curable resin 9 ′ and curing the mold 19 in a state where the glass plate 3 and the sealing resin 7 are in contact with each other. For this reason, the lens 9 can be easily formed in a desired shape. The shape of the convex surface of the lens 9 may be a shape that corrects light incident on the lens 9 so that it can be emitted perpendicularly to the effective pixel region 1a, and may be spherical or aspherical. For example, the lens 9 may be formed as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape.

  It is preferable that a silane coupling agent is provided on the glass plate 3.

  The silane coupling agent to be applied to the glass plate 3 is not limited as long as it can improve the chemical adhesive force with the lens 9. From the conventionally known silane coupling agent, the property of the resin constituting the lens 9 is improved. In addition, it may be selected as appropriate.

  As the silane coupling agent that improves the adhesion between the lens 9 and the glass plate 3, an epoxy or amino silane coupling agent is preferable.

  The silane coupling agent may be applied to the glass plate 3 as follows. The silane coupling agent is diluted to about 1% with an organic solvent such as isopropyl alcohol. The upper surface of the glass plate 3 is immersed (dip) in the diluted silane coupling agent. By drying the glass plate 3 dipped with the silane coupling agent, the silane coupling agent can be applied to the glass plate 3. In addition to the method described here, a silane coupling agent can be applied to the glass plate 3 using a conventionally known method.

  Note that a microlens is preferably formed on the effective pixel region 1 a of the sensor chip 1.

  By having the above configuration, it is possible to further correct the angle of light emitted from the lens 9 (the emission angle is corrected) and incident on the effective pixel region 1a by the microlens. Therefore, the light incident on the effective pixel region 1a of the solid-state imaging device 10 can be corrected to a more optimal state.

  When the solid-state imaging device 10 is applied to an imaging device, the design (shape and shape) of the optical system (lens 9, microlens, imaging lens, etc.) of the entire imaging device is also taken into consideration the formation position of the microlens and the like. It is preferable to perform the arrangement.

  Furthermore, an infrared cut filter is preferably formed between the glass plate 3 and the lens 9.

  When the solid-state imaging device 10 is built in a photographing apparatus such as a camera or a video recorder camera, it is necessary to avoid that infrared rays unnecessary for image formation are incident on the sensor chip 1. In order to avoid the incidence of infrared rays on the sensor chip 1, it is necessary to reflect and / or absorb (cut) the infrared rays. Here, description will be given below by taking as an example the formation of a dielectric multilayer film for reflecting infrared rays between the glass plate 3 and the lens 9.

  In the dielectric multilayer film, the range of the wavelength of the reflected light changes according to the incident angle of the light. For this reason, when a dielectric multilayer film is formed on a curved surface (for example, the lens 9), the wavelength of the reflected light is different between the vicinity of the center and the vicinity of the end portion. For this reason, it is preferable to form on the flat glass plate 3. FIG.

  Furthermore, the dielectric multilayer film is formed on the surface of the glass plate 3 for forming the lens 9. This is because, when a dielectric multilayer film is formed on the surface of the glass plate 3 facing the effective pixel region 1a, when the dielectric multilayer film peels off, it adheres to the effective pixel region 1a, thereby degrading the image quality.

  When a dielectric multilayer film is formed on only one surface of the glass plate 3, the glass plate 3 is warped due to the film stress of the dielectric multilayer film. However, after the dielectric multilayer film is formed on the glass plate 3 having a large area, the glass plate 3 is divided into small pieces by dicing, so that the film stress can be released (reduced). For this reason, the warp of the glass plate 3 due to the formation of the dielectric multilayer film does not deteriorate the quality of the image formed by the solid-state imaging device 10.

  An infrared reflective dielectric multilayer film is a multilayer film in which high refractive index layers and low refractive index layers are alternately formed by sputtering or vapor deposition.

Examples of the material constituting the high refractive index layer include TiO ₂ (n = 2.4), Ta ₂ O ₅ (n = 2.1), Nb ₂ O ₅ (n = 2.2), and ZrO _2. (N = 2.05). Examples of the material constituting the low refractive index layer include SiO ₂ (n = 1.46), Al ₂ O ₃ (n = 1.63), and MgF ₂ (n = 1.38). Note that n in parentheses indicates a refractive index with respect to light having a wavelength of 500 nm that a layer formed of a single material has, and the refractive index changes depending on the wavelength of incident light.

  In the dielectric multilayer film, the high refractive index layer and the low refractive index layer are usually formed to have the same optical film thickness. If the design wavelength λ is near the center of the wavelength range of the light to be cut, the optical film thickness nd can be expressed as ¼λ. The high refractive index layer having the optical film thickness nd is represented by 1H, and the low refractive index layer having the optical film thickness nd is represented by 1L.

  Here, when expressed as “(0.5H, 1L, 0.5H) S”, there are two high refractive index layers having a film thickness of 1 / 8λ, and 1 / 4λ between the two layers. It means a state in which one or more sets of the low refractive index layers having a film thickness are formed. Furthermore, “S” is called the number of stacks and represents how many pairs in parentheses are stacked.

  The actually laminated dielectric multilayer film is composed of 2S + 1 layers. As the value of S is increased, the rising characteristic (steepness) that changes from reflection to transmission can be increased. The value of S is selected from the range of 3-20.

  The light having a wavelength that can be cut can be determined from the refractive index of each layer constituting the dielectric multilayer film and the above-described upward characteristics. Usually, the dielectric multilayer film for cutting (reflecting) infrared rays is formed from a laminated structure of 40 to 60 layers.

  The glass plate 3 may be a transparent member having a plane parallel plate shape, and is not limited to glass but may be made of resin or the like.

  The sensor substrate 13 only needs to have a flat plate structure having insulating properties. The entire sensor substrate 13 may be made of an insulating material, or the surface of the sensor substrate 13 may have insulating properties. The material for constituting the sensor substrate 13 can be selected from conventionally known various materials such as ceramic and resin. Moreover, the conventionally well-known various methods can be employ | adopted for the method of providing insulation to the sensor board | substrate 13 surface.

  The spacer 5 may be any material that can hold the sensor chip 1 and the glass plate 3 in parallel. For example, the spacer 5 can be selected from various conventionally known materials such as an adhesive material. The spacer 5 is preferably made of an opaque material so that light does not enter from members other than the glass plate 3.

  What is necessary is just to select as a material which comprises the sealing resin 7 from conventionally well-known various resin. The sealing resin 7 is preferably made of an opaque material so that light does not enter from members other than the glass plate 3. Further, as a method for forming the sealing resin 7, various conventionally known methods may be employed.

[Embodiment 2]
An embodiment of the present invention will be described below with reference to FIG. 4A is a cross-sectional view illustrating a configuration of a solid-state imaging device 31 that is a modified example of FIG. 1, and FIG. 4B is a configuration of a solid-state imaging device 33 that is another modified example of FIG. It is sectional drawing shown.

As shown in FIG. 4A, the solid-state imaging device 31 includes a sensor substrate 13 having an external connection terminal 17 formed in the lower portion, a sensor chip 1 formed on the sensor substrate 13, and an effective pixel region 1a of the sensor chip 1. , A glass plate 3 disposed so as to face each other, a spacer 5 that holds the sensor chip 1 and the glass plate 3 in parallel, a part of the sensor substrate 13, a part of the sensor chip 1, a side wall of the glass plate 3, and the spacer 5 The sealing resin 7 which seals the side wall of this and the resin-made lens 32 which covers the glass plate 3 are provided.

  The surface of the sealing resin 7 is subjected to Ar plasma treatment. Due to the Ar plasma treatment, minute irregularities are formed on the surface of the sealing resin 7, and a release agent for peeling the solid-state imaging device 31 from the mold after resin sealing is formed from the surface of the sealing resin 7. Has been removed. The effective pixel area 1 a is formed in an area on the sensor chip 1 sandwiched between the spacers 5. The lens 32 is obtained by filling a mold with a photocurable resin 9 'that is cured by irradiation with ultraviolet rays and curing the resin by ultraviolet irradiation. An overhang 32 a made of the same resin as the lens 32 is formed on the sealing resin 7 slightly away from the lens 32 on the outer peripheral side.

  In the solid-state imaging device 31, an adhesion improving portion is formed by performing Ar plasma treatment on the surface of the sealing resin 7. For this reason, the sealing resin 7 and the lens 9 are firmly bonded (refer to Embodiment 1 for details).

  The solid-state imaging device 31 is different from the solid-state imaging device 10 of the first embodiment in that an overhang 32a made of the same resin as the lens 32 is formed on the sealing resin 7 slightly away from the lens 32 on the outer peripheral side. It is that.

  The overhang 32 a is formed by curing the energy curable resin 32 ′ filled in the mold 51. That is, it is formed at the same time as the lens 32 (see FIG. 6A for the mold 51 and the energy curable resin 32 ').

  When the mold 51 filled with the energy curable resin 32 ′ is brought into contact with the glass plate 3 in order to form the lens 32, bubbles may be generated at the interface between the glass plate 3 and the energy curable resin 32 ′. When bubbles are mixed in the convex surface of the lens 32, naturally, when the bubbles are irradiated with light, unexpected light diffusion occurs. The diffused light is incident on the effective pixel region 1a as stray light, and the light incident efficiency on the effective pixel region 1a below the bubbles is reduced.

  That is, the lens 9 cannot appropriately correct the angle of the light incident on the effective pixel region 1a, and the bubbles locally reduce the incident efficiency. Therefore, the image quality of the formed image is extremely reduced.

  The overhang 32 a is formed to remove the bubbles from the lens 32. The reason why the overhang 32a is formed will be described below.

  The mold 51 is filled with more energy curable resin 32 ′ than is necessary for forming the lens 32. The mold 51 filled with an excessive amount of the energy curable resin 32 ′ is brought into contact with the glass plate 3. At this time, it is assumed that bubbles are generated at the interface between the energy curable resin 32 ′ and the glass plate 3.

  When the mold 51 is firmly attached to the glass plate 3, the bubbles are pushed out of the mold 51 as an excessive amount of the energy curable resin 32 ′ is pushed out of the mold 51. By curing the energy curable resin 32 ′ in a state where the mold 51 is in close contact with the glass plate 3, the energy curable resin 32 ′ pushed out of the mold 51 is cured in a state where bubbles are included. As described above, the overhang 32a is formed.

  Since the solid-state imaging device 31 according to the present embodiment includes the overhang 32a, bubbles are not mixed into the resin lens 32. Therefore, the production yield of the solid-state imaging device 31 can be improved.

  Next, a modification of the solid-state imaging device 31 will be described with reference to FIG.

As shown in FIG. 4B, the solid-state imaging device 33 includes a sensor substrate 13 having an external connection terminal 17 formed in the lower portion, a sensor chip 1 formed on the sensor substrate 13, and an effective pixel region 1a of the sensor chip 1. , A glass plate 3 disposed so as to face each other, a spacer 5 that holds the sensor chip 1 and the glass plate 3 in parallel, a part of the sensor substrate 13, a part of the sensor chip 1, a side wall of the glass plate 3, and the spacer 5 The sealing resin 7 which seals the side wall of the resin, and the resin lens 34 which covers the glass plate 3 are provided.

  The surface of the sealing resin 7 is subjected to Ar plasma treatment. Due to the Ar plasma treatment, minute irregularities are formed on the surface of the sealing resin 7, and a release agent for peeling the solid-state imaging device 33 from the mold after resin sealing from the surface of the sealing resin 7. Has been removed. The effective pixel area 1 a is formed in an area on the sensor chip 1 sandwiched between the spacers 5. The lens 34 is obtained by filling a mold with a photocurable resin 9 ′ that is cured by irradiation with light such as ultraviolet rays, and curing the resin by ultraviolet irradiation. The lens 34 has a flat plate-like protrusion 34 a extending to the vicinity of the outer periphery of the sealing resin 7.

  The difference between the solid-state imaging device 33 and the solid-state imaging device 31 is that the shape and position of the formed overhang 34a and overhang 32a are different. The protrusion 34a and the protrusion 32a have different shapes and formation positions, but the function of removing bubbles from the convex surfaces of the lens 34 and the lens 32 is the same.

  The overhang 34 a is formed using an energy curable resin 34 ′ filled in the mold 52. The mold 52 has a substantially spherical recess for forming the lens 34 and a flat recess so as to surround the recess (see FIG. 6B). Since the flat depression is formed so as to face the region near the outer periphery of the sealing resin 7, the overhang 34 a covers most of the upper surface of the solid-state imaging device 33.

  The overhang 34a is formed so as to be parallel to the effective pixel region 1a. Since the shape can be formed along the mold 52, the shape of the overhang 34a can be easily flattened, and the flat surface can be parallel to the effective pixel region 1a. Furthermore, the energy curable resin 34 ′ is cured while bringing a part of the flat recess of the mold 52 into contact with the four corners of the glass plate 3, thereby referring to the description in the first embodiment. An overhang 34a (flat bed structure) parallel to the region 1a can be easily formed.

  When the solid-state imaging device 33 is mounted on an imaging device, it is necessary to provide a lens for demarcating the optical path of light from the subject. When installing the lens, care must be taken so that the axis of light passing through the center of the lens is exactly perpendicular to the center of the effective pixel region 1a. Here, if the axis of the light transmitted through the center of the lens is shifted from the center of the effective pixel region 1a, or the axis of the light transmitted through the center of the lens is not exactly orthogonal to the effective pixel region 1a, naturally, the imaging device The image formed by the distortion may be distorted.

  In order to arrange the lens so that the axis of the light passing through the center of the lens is exactly perpendicular to the center of the effective pixel region 1a, the plane parallel to the effective pixel region 1a of the solid-state imaging device 33 is used. It is preferable to form a member for fixing the lens.

  Note that when the mold 52 is filled with an excessive amount of the energy curable resin 34 ′ in order to form the overhang 34 a, it is necessary to suppress the amount to a level that does not hinder the formation of the member for fixing the lens.

  Here, the overhang 34 a extends to the vicinity of the outer periphery of the sealing resin 7. For this reason, the adhesion area between the lens 34 and the sealing resin 7 can be increased by the area of the overhang 34a. That is, the adhesive force between the lens 34 and the sealing resin 7 can be improved.

  Therefore, peeling of the lens 34 caused by the heating / cooling process in the manufacturing process and the change in the use environment of the product can be more reliably suppressed.

  As described above, the overhang 34a extends to the vicinity of the outer periphery of the sealing resin 7 and is formed so as to be parallel to the effective pixel region 1a. As a result, it is possible to accurately assemble an imaging device incorporating the solid-state imaging device 33 by an inexpensive and simple method. Furthermore, the reliability of the product can be increased.

  As described above, the solid-state imaging devices 10, 31, and 33 according to the present invention in which the separation of the resin lens 9 from the sealing resin 7 is suppressed reduce the manufacturing cost, improve the reliability, and reduce the size. In addition, it is possible to achieve a reduction in thickness and solve problems caused by widening the incident light. The problems caused by the widening of the incident light include (1) a decrease in the incident light rate at the outer periphery of the effective pixel region 1a, and (2) color tone at the outer periphery of the effective pixel region 1a when an infrared cut filter is used. It is a change. For this reason, the solid-state imaging devices 10, 31, and 33 that can form high-quality images can be provided.

In addition, when solved by an optical system for mounting the problems in the solid-state imaging device, the design of the optical shape (shape of the convex surface) becomes very difficult at the outer peripheral portion of the lens disposed in the vicinity of the sensor chip (end) . Since the solid-state imaging devices 10, 31 and 33 according to the present invention do not need to solve the above-described problems with an optical system, the degree of freedom in design (shape and arrangement) of the optical system is high.

  Furthermore, since the lens 9 can be formed by a replica method, it is easy to form the optical surface of the lens 9 so as to have a desired function with high accuracy.

[Embodiment 3]
A method for manufacturing the solid-state imaging device 10 according to an embodiment of the present invention will be described below with reference to FIG. FIG. 5 is a cross-sectional view illustrating each step in the method for manufacturing the solid-state imaging device 10.

  As shown in FIG. 5, the process of forming the lens 9 in an incomplete solid-state imaging device (hereinafter simply referred to as a solid-state imaging device) after resin sealing is performed in the order of S41 to S44.

  As preparation for forming the lens 9, the surface of the sealing resin 7 is subjected to Ar plasma treatment to form minute irregularities on the surface of the sealing resin 7, and the release agent is removed from the surface of the sealing resin 7.

  The solid-state imaging device in which the surface of the sealing resin 7 is treated with Ar plasma is vacuum-fixed (vacuum chucking) using a rod 41 of a mounter device (not shown) so that the glass plate 3 faces downward. At the same time, the depression formed to transfer the surface shape of the lens 9 of the transparent mold 19 is filled with a photocurable resin 9 'having fluidity (S41).

  Here, in the present embodiment, as the resin constituting the lens 9, a photocurable resin 9 ′ that is cured by irradiation with ultraviolet rays is described as an example. However, if the resin is an energy curable resin, the solid of the present invention is used. The present invention can be applied to a method for manufacturing an imaging device.

  The shape (planar shape, center position, etc.) of the effective pixel region 1a is imaged using the camera 42 through the transparent mold 19, the photocurable resin 9 ', and the glass plate 3. The captured image of the effective pixel area 1a is subjected to image processing by an image processing apparatus. The center of the transparent mold 19 previously recognized by the image processing apparatus and the center of the effective pixel area 1a subjected to image processing are aligned in the X-axis direction and / or the Y-axis direction (S42).

  Here, the glass plate 3 may be provided with a silane coupling agent before S41 (see Embodiment 1 for the application of the silane coupling agent to the glass plate 3).

  After completion of the alignment, the transparent mold 19 filled with the photocurable resin 9 ′ is fixed in a state where it is in contact with the glass plate 3 and the sealing resin 7. After fixing the transparent mold 19, the UV lamp is turned on and ultraviolet irradiation is performed (S43).

  Here, in S43, the transparent mold 19 is in contact with the sealing resin 7. However, as described in the first embodiment, the flat portion of the transparent mold 19 is in contact with the four corners of the glass plate 3. You may do it. Thereby, the lens 9 can be formed so that the light transmitted through the center of the lens 9 is incident on the center of the effective pixel region 1a.

  The photocurable resin 9 'filled in the transparent mold 19 is cured by the ultraviolet irradiation in S43.

  After the photocurable resin 9 'is sufficiently cured to form the lens 9, the transparent mold 19 is released from the solid-state imaging device 10 (S44).

  By using the manufacturing method according to this embodiment, it is possible to easily form a lens 9 having a complicated shape, such as an aspherical lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape. it can. Furthermore, since the lens 9 can be formed while aligning so that the center of the lens 9 accurately faces the center of the effective pixel region 1a, an image with low aberration and high resolution can be formed. A solid-state imaging device 10 that can be provided can be provided.

  Note that the solid-state imaging devices 31 and 33 described in the second embodiment can be manufactured by modifying a part of the manufacturing method of the solid-state imaging device 10 according to the present embodiment. Modification items from FIG. 5 in the manufacturing method of the solid-state imaging devices 31 and 33 will be described below with reference to FIG. FIG. 6A is a cross-sectional view showing one process for forming the lens 32 and the overhang 32a ′ of the solid-state imaging device 31, and FIG. 6A shows the lens 34 and the overhang 34a ′ of the solid-state imaging device 33. It is sectional drawing which shows one process for forming.

  FIG. 6A shows a state where the alignment of the center of the transparent mold 51 and the effective pixel region 1a is completed, and the transparent mold 51 and the sealing resin 7 are in contact with each other. The transparent mold 51 is formed to be smaller than the surface dimension of the sealing resin 7.

  In the method for manufacturing the solid-state imaging device 31, the transparent mold 51 is filled with an excessive amount of photocurable resin 32 '. For this reason, a part of the photocurable resin 32 ′ filled in the transparent mold 51 protrudes outside the transparent mold 51.

  As described above, when the photocurable resin 32 ′ filled in the transparent mold 51 contacts the glass plate 3, bubbles may be formed at the interface between the photocurable resin 32 ′ and the glass plate 3. .

  However, if the transparent mold 51 is brought into close contact with the sealing resin 7, the excess photocurable resin 32 ′ is pushed out of the transparent mold 51. At this time, the bubbles formed at the interface are pushed out in a state of being enclosed in a part 32a 'of the photocurable resin.

  Therefore, the solid-state imaging device 31 can be manufactured by curing the photocurable resin 32 ′ and a part 32 ′ thereof in this state.

  FIG. 6B shows the same manufacturing process as in FIG. Therefore, a part 34 b ′ of the photocurable resin 34 ′ and 34 a ′ protrudes from the transparent mold 52. For this reason, the said bubble can be extruded from photocurable resin 34 '.

  The difference from FIG. 6A is that the transparent mold 52 is larger than the planar dimension of the sealing resin 7 and that the transparent mold 52 has a substantially spherical depression for transferring the shape of the lens 34. That is, a flat recess is formed on the outside.

  The bottom surface of the flat recess of the transparent mold 52 is formed and aligned so as to be parallel to the effective pixel region 1a.

  In FIG. 6B, the sealing resin 7 and the glass plate 3 are formed flat, but as shown in FIG. 4B, even if the glass plate 3 slightly protrudes. Good. At this time, the photocurable resins 34 ′ and 34 a ′ can be cured while the bottom surface of the flat recess of the transparent mold 52 is in contact with the four corners of the glass plate 3.

  Therefore, when the photocurable resins 34 ′ and 34 a ′ are cured in this state, the solid-state imaging device 33 can be manufactured.

[Embodiment 4]
An embodiment according to the present invention will be described below with reference to FIG. FIG. 7 is a cross-sectional view illustrating the configuration of the imaging device 61 that incorporates the solid-state imaging device 10.

  As illustrated in FIG. 7, the imaging device 61 includes a solid-state imaging device 10, an imaging lens 62 that includes a flat surface and two convex surfaces, and a light shielding unit that is formed with the flat surface of the imaging lens 62 interposed therebetween. 63, and a spacer 64 for adjusting and fixing the distance between the imaging lens 62 and the sensor chip 1 in the optical axis direction.

  The imaging lens 62 is an optical path delimiter that demarcates the optical path of light incident on the solid-state imaging device 10. The light shielding unit 63 is a diaphragm of the imaging lens 62 and suppresses the incidence of stray light among the light incident on the imaging lens 62. The spacer 64 is formed in the vicinity of the outer periphery of the sealing resin 7.

  The external connection terminal 17 provided on the bottom surface of the solid-state imaging device 10 is electrically connected to a conductor wiring formed on a wiring board (not shown). Further, the conductor wiring is electrically connected to an image processing apparatus bonded on the wiring board (not shown). That is, the solid-state imaging device 10 is electrically connected to the image processing device through the conductor wiring.

  For this reason, the light incident from the imaging lens 62 enters the effective pixel region 1 a on the sensor chip 1 via the lens 9, the glass plate 3, and the air layer 11. The light incident on the effective pixel area 1a is converted into an electrical signal and transmitted to the image processing apparatus. The image processing device forms an image based on the transmitted electrical signal.

  Since it has the above configuration, the imaging device 61 has the same functions and operations as the solid-state imaging device 10.

  Note that the imaging device 61 may include the solid-state imaging device 31 or the solid-state imaging device 33 instead of the solid-state imaging device 10. In particular, when the imaging device 61 includes the solid-state imaging device 33, an overhang 34 a is formed between the sealing resin 7 and the spacer 64. For this reason, as described in the second embodiment, the separation of the lens 34 caused by the heating / cooling process in the manufacturing process and the change in the use environment of the product can be more reliably suppressed. Therefore, the production yield and reliability of the imaging device 61 can be further improved.

[Embodiment 5]
An embodiment according to the present invention will be described below with reference to FIG. FIG. 8A is a cross-sectional view showing a configuration of the solid-state imaging device 81 of the present embodiment, and FIG. 8B shows a state in which light is incident on the end portion of the lens 91 of the solid-state imaging device 81. FIG. 8C is a cross-sectional view in which the vicinity of the end of the lens 91 in FIG. 8B is enlarged.

  The solid-state imaging device 81 is common in many respects to the solid-state imaging device 10 of the first embodiment. Among the configurations of the solid-state imaging device 81, configurations having the same numbers as the configurations of the solid-state imaging device 10 have the same names and functions. Therefore, in the present embodiment, the first embodiment may be referred to for the configuration and the function with the same numbers as the configuration of the solid-state imaging device 10.

As shown in FIG. 8A, a solid-state imaging device 81 according to this embodiment includes a sensor substrate 13 having an external connection terminal 17 formed in the lower portion, and a sensor chip 1 (solid-state imaging device) formed on the sensor substrate 13. ), A glass plate 3 (transparent plate) arranged so as to face the effective pixel region 1a of the sensor chip 1, a spacer 5 for holding the sensor chip 1 and the glass plate 3 in parallel, and an upper surface and a side wall of the glass plate 3 A resin lens 91 in contact with the resin. The lens 91 is in contact with all the surfaces of the glass plate 3 excluding the surface facing the effective pixel region 1a via the air layer 11.

  The solid-state imaging device 81 is different from the sensor chip 10 in that it is not sealed with the sealing resin 7 and that the size of the lens 91 is obviously larger than the size of the glass plate 3.

  However, the convex shape of the lens 91 is the same as the convex shape of the lens 9 of Embodiment 1 (see FIG. 1). Therefore, the lens 91 is configured to refract the light incident on the lens 91 so that the angle of the light approaches a right angle, and has the same function as the lens 9.

  As is apparent from the drawing, the end portion 91a of the lens 91 is a surface that faces the effective pixel region 1a with the air layer 11 among the six surfaces of the glass plate 3 (hereinafter simply referred to as “bottom surface”). Are in contact with five surfaces (one upper surface and four side walls).

  Advantages of the lens 91 in contact with one upper surface and four side walls of the glass plate 3 will be described below.

  As shown in FIG. 8C, the light emitted from the imaging lens 62 that collects the light from the subject includes light 20 that enters the vicinity of the end 91 a of the lens 91.

  As shown in FIG. 8B, when the light 20 enters the lens 91, the light 20 travels inside the lens 9 as refracted light 20 a refracted on the convex surface of the lens 91. The refracted light 20a enters the glass plate 3 from the inside of the lens 91.

  A part of the refracted light 20 a incident on the glass plate 3 passes through the side wall of the glass plate 3 and enters the lens 91 again. The refracted light 20 a that has entered the lens 91 again reaches the lower surface of the end 91 a of the lens 91. The refracted light 20a that has reached the lower surface of the end 91a of the lens 91 is refracted toward the outside of the solid-state imaging device 81 and is emitted from the lens 91 as refracted light 20c. For this reason, among the refracted light 20a, the refracted light 20a that reaches the lower surface of the end portion 91a of the lens 91 does not enter the effective pixel region.

  Further, a part of the refracted light 20a incident on the glass plate 3 reaches the side wall of the glass plate 3 in contact with the outside air. The refracted light 20a that has reached the side wall of the glass plate 3 is reflected on the side wall of the glass plate 3 because the difference in refractive index between the glass plate 3 and the outside air is large. The reflected light 20 d reflected on the side wall of the glass plate 3 goes to the inside of the solid-state imaging device 81. However, the reflected light 20d reaches the spacer 5 arranged outside the effective pixel region. That is, the reflected light 20d does not enter the effective pixel region. Furthermore, since the s spacer 5 does not have light transmittance, the reflected light 20 d is absorbed by the spacer 5.

  As described above, since the end portion 91a of the lens 91 is in contact with the side wall of the glass plate 3, the light 20 incident on the vicinity of the end portion 91a of the lens 91 does not enter the effective pixel region. That is, the stray light in which the light 20 unnecessary for forming the image incident on the end portion 91a of the lens 91 enters the effective pixel region is reduced.

  Accordingly, stray light incident on the effective pixel region is reduced, and thus it is possible to suppress a reduction in image quality of an image formed using the solid-state imaging device 81.

  Furthermore, in addition to the advantage that stray light incident on the effective pixel region is reduced, the following advantages obtained by the lens 91 being in contact with one upper surface and four side walls of the glass plate 3 can be given. it can.

  Conventionally, when a solid-state imaging device including a resinous lens is mounted by lead-free solder reflow processing, the glass plate is peeled off due to deformation of the lens. For this reason, generally, an inexpensive lead-free solder reflow process cannot be employed as a mounting method for a solid-state imaging device including a resinous lens.

  However, with the above configuration, it is possible to suppress peeling of the lens from the glass plate, which occurs when an inexpensive lead-free solder reflow process is employed as a mounting method using the solid-state imaging device 81 including a resinous lens.

  When a solid-state imaging device 81 having a resinous lens is mounted by a lead-free solder reflow process (exposed under high temperature conditions), the lens 91 and the glass plate 3 have different thermal expansion coefficients. Therefore, the resin lens 91 is subjected to thermal stress.

  The thermal stress received by the resin lens 91 includes not only a shearing force but also a tensile force. Resin has a strong repulsive force (shrinking force) so as not to be deformed against the tensile force. Therefore, when the resin lens 91 is formed so as to be in contact with the upper surface and the side wall of the glass plate 3 (so as to wrap around from the upper surface of the transparent plate to the side wall), the glass plate 3 becomes a resin when exposed to high temperature conditions. It receives a force that can be tightened by the lens 91 made of the metal.

  Therefore, the adhesion between the glass plate 3 and the resin lens 91 is improved. Since the adhesion (adhesive force) between the glass plate 3 and the resin lens 91 is improved, the glass of the lens 91 generated when the solid-state imaging device 81 including the resin lens 91 is exposed under a high temperature condition. Separation from the plate 3 can be suppressed.

  Since the lens 91 is in contact with one upper surface and four side walls of the glass plate 3, an inexpensive reflow process can be adopted as a mounting method of the solid-state imaging device 81 including the resinous lens 91. Therefore, the mounting cost of the solid-state imaging device 81 can be reduced.

  As a method for further improving the adhesive force between the lens 91 and the glass plate 3, a method of applying a silane coupling agent to the upper surface of the glass plate 3 can be mentioned. See Embodiment 1 for details of the method for applying the silane coupling agent.

  In the present embodiment, the lens 91 (see FIG. 8) is composed of a photocurable resin 91 'that is cured by ultraviolet irradiation as shown in FIG. The lens 91 is formed by filling the depression of the mold 19 ′ with a photocurable resin 91 ′ and irradiating with ultraviolet rays in a state where the flat portion of the mold 19 ′ is in contact with the glass plate 3.

  As described above, the lens 91 is configured to correct the angle of the light incident on the solid-state imaging device 81 so as to approach a right angle, and the light transmitted through the center of the lens 91 is incident on the effective pixel region 1a at a right angle. Need to be formed. In order to form the lens 91 so that the angle of the incident light can be appropriately corrected, the flat portion of the mold 19 ′ is brought into contact with a surface parallel to the effective pixel region 1a (for example, the exposed portion 3a of the glass plate 3). There is a need.

  The glass plate 3 is bonded to the sensor chip 1 via the spacer 5 so as to face the effective pixel region 1a. Since the glass plate 3 has a parallel plane shape and the spacer 5 has a very thin structure having a uniform thickness, the upper surface of the glass plate 3 is parallel to the effective pixel region 1a.

  Since the lens 91 is formed in a state in which the flat portion of the mold 19 ′ is in contact with the exposed portion 3a of the glass plate 3 parallel to the effective pixel region 1a, the light transmitted through the center of the lens 91 is accurately reflected in the effective pixel region. It can be incident at a right angle to 1a. That is, since the glass plate 3 has the exposed portion 3a from the lens 91, the mounting accuracy of the lens 91 can be increased.

  Here, in FIG. 8, the exposed part 3a of the glass plate 3 is not depicted. FIG. 9 is a cross-sectional view of the solid-state imaging device 81 along a diagonal line of the glass plate 3 having a rectangle. FIG. 8 is a solid line along a line parallel to one side of the glass plate 3 having a rectangle. This is because the cross section of the imaging device 81 is taken. That is, the exposed portion 3a of the glass plate 3 is formed near each corner of the rectangle on the upper surface of the glass plate 3, and when the photocurable resin 91 ′ is cured, the flat portion of the mold 19 ′ and the upper surface of the glass plate 3 are Near each corner of the rectangle is in contact.

[Embodiment 6]
A method for manufacturing the solid-state imaging device 81 according to an embodiment of the present invention will be described below with reference to FIG. FIG. 10 is a cross-sectional view illustrating each step in the method for manufacturing the solid-state imaging device 81.

  The manufacturing method according to the present embodiment is not significantly different from the manufacturing method according to the third embodiment described with reference to FIG. The difference between the manufacturing method of the present embodiment and the manufacturing method of the third embodiment is that the transparent mold 19 ′ of FIG. 10 for filling the photocurable resin 91 ′ and the transparent mold 19 of FIG. The size of the depression is different. Specifically, since the diameter of the depression formed to transfer the surface shape of the lens 91 of the transparent mold 19 ′ is larger than that of the transparent mold 19, the entire depression formed in the transparent mold 19 ′ The size is larger than the transparent mold 19.

  As described above, the manufacturing method according to the present embodiment is largely different from the manufacturing method according to the third embodiment in that the shape of the mold to be used is different. For details of each step, refer to Embodiment 3 as appropriate.

  The solid-state imaging device is vacuum-fixed (vacuum chucking) using a rod 41 of a mounter device (not shown) so that the glass plate 3 faces downward. At the same time, a photocurable resin 91 'having fluidity is filled in the depression formed to transfer the surface shape of the lens 91 of the transparent mold 19' (S11).

  The shape (planar shape, center position, etc.) of the effective pixel region 1a is imaged using the camera 42 through the transparent mold 19 ', the photocurable resin 91', and the glass plate 3. The captured image of the effective pixel area 1a is subjected to image processing by an image processing apparatus. The center of the transparent mold 19 ′ previously recognized by the image processing apparatus and the center of the effective pixel area 1 a subjected to image processing are aligned in the X-axis direction and / or the Y-axis direction (S 12).

  After completion of the alignment, the transparent mold 19 ′ filled with the photocurable resin 91 ′ is fixed in a state where it is in contact with the glass plate 3. After fixing the transparent mold 19 ', the UV lamp is turned on and ultraviolet irradiation is performed (S13).

  The photocurable resin 91 ′ filled in the transparent mold 19 ′ is cured by the ultraviolet irradiation in S <b> 13.

  After the photocurable resin 91 'is sufficiently cured to form the lens 91, the transparent mold 19' is released from the solid-state imaging device 10 (S14).

  By using the manufacturing method according to the present embodiment, it is possible to easily form a lens 91 having a complicated shape, such as an aspheric lens having power, a lens having a Fresnel shape, and a diffractive lens having a fine relief shape. it can. Furthermore, since the lens 91 can be formed while aligning so that the center of the lens 91 is exactly opposite to the center of the effective pixel region 1a, an image with low aberration and high resolution can be formed. A solid-state imaging device 81 that can be provided can be provided.

[Embodiment 7]
An embodiment according to the present invention will be described below with reference to FIG. FIG. 11 is a cross-sectional view illustrating the configuration of an imaging device 61a that incorporates a solid-state imaging device 81.

  The photographing apparatus 61a of the present embodiment and the photographing apparatus 61 of the fourth embodiment are common in many respects. The imaging device 61a and the imaging device 61a are greatly different from each other in that the built-in solid-state imaging device is different and the mounting position of the imaging lens 62 is different. The details of the solid-state imaging device 81 incorporated in the imaging device 61a may be referred to the fifth embodiment, and thus description thereof is omitted here. Therefore, the mounting position of the imaging lens 62 in the imaging device 61a will be described below.

  As illustrated in FIG. 11, the imaging device 61 a includes a solid-state imaging device 81, an imaging lens 62 including a flat surface and two convex surfaces, and a light-shielding unit formed with the flat surface of the imaging lens 62 interposed therebetween. 63, and a spacer 64 for adjusting and fixing the distance between the imaging lens 62 and the sensor chip 1 in the optical axis direction.

  The imaging lens 62 is an optical path delimiter that demarcates the optical path of light incident on the solid-state imaging device 81. The light shielding unit 63 is a diaphragm of the imaging lens 62 and suppresses the incidence of stray light among the light incident on the imaging lens 62. The spacer 64 is formed near the outer periphery of the sensor substrate 13 so as not to contact the bonding wire 15.

  The external connection terminal 17 provided on the bottom surface of the solid-state imaging device 81 is electrically connected to a conductor wiring formed on the wiring board (not shown). Further, the conductor wiring is electrically connected to an image processing apparatus bonded on the wiring board (not shown). That is, the solid-state imaging device 81 is electrically connected to the image processing device through the conductor wiring.

  For this reason, the light incident from the imaging lens 62 enters the effective pixel region 1 a on the sensor chip 1 via the lens 91, the glass plate 3, and the air layer 11. The light incident on the effective pixel area 1a is converted into an electrical signal and transmitted to the image processing apparatus. The image processing device forms an image based on the transmitted electrical signal.

  Since it has the above configuration, the imaging device 61 a has the same functions and operations as the solid-state imaging device 81.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

[Other configurations]
Note that the present invention can also be realized with the following configuration.

(First configuration)
At least a solid-state imaging device having an effective pixel region on one surface;
A translucent lid that is disposed to face the effective pixel region at a predetermined interval and has a planar dimension that is equal to or larger than the planar dimension of the effective pixel region and smaller than the planar dimension of the solid-state imaging device;
A non-translucent adhesive layer formed between the effective pixel region and the translucent lid portion and excluding the effective pixel region, and provided so as to surround the effective pixel region;
A non-translucent sealing resin portion formed over the entire region excluding a sealed space formed by the solid-state imaging device, the translucent lid portion, and the adhesive layer;
A solid-state imaging device comprising a lens disposed on the translucent lid,
A solid-state imaging device with a lens , wherein the lens is formed across the translucent lid and the sealing resin.

(Second configuration)
At least a solid-state imaging device having an effective pixel region on one surface;
A translucent lid that is disposed to face the effective pixel region at a predetermined interval and has a planar dimension that is equal to or larger than the planar dimension of the effective pixel region and smaller than the planar dimension of the solid-state imaging device;
An adhesive layer formed between the effective pixel region and the translucent lid and excluding the effective pixel region, and provided to surround the effective pixel region;
A solid-state imaging device and a lens disposed on the object side of the transparent cover,
A solid-state imaging device with a lens , wherein the lens is formed across the translucent lid and the sealing resin.

(Third configuration)
With the lens according to the first or second configuration, the lens is formed of a resin having a transmissivity of 80% or more in the visible light band even after being exposed to a temperature of −60 to 270 ° C. Solid-state imaging device.

(Fourth configuration)
A solid-state imaging device with a lens according to any one of the first to third configurations in which the lens is not formed on a part of the translucent lid.

(Fifth configuration)
A solid-state imaging device with a lens according to any one of the first to fourth configurations, wherein an object side surface of the sealing resin portion has hydrophilicity.

(Sixth configuration)
The lens- equipped solid-state imaging device according to any one of the first to fifth configurations in which the object-side surface of the translucent lid is subjected to silane coupling treatment.

(Seventh configuration)
The said lens is a solid-state imaging device with a lens which concerns on any one structure of the 1st-6th formed with the translucent resin material of refractive index 1.3-1.4 in visible region.

(Eighth configuration)
The solid-state imaging device with a lens according to any one of first to seventh configurations, in which a structure made of a translucent resin formed simultaneously with the lens is formed.

(Ninth configuration)
at least,
Applying hydrophilic treatment to the object side surface of the sealing resin portion;
Filling the cavity part of the translucent mold provided with a cavity part for transferring the shape of the lens with an energy curable resin;
Contacting a part of the translucent mold with a portion of the solid-state imaging device where the lens of the translucent lid is not formed;
A molding step of curing the energy curable resin to form a lens ;
A method for manufacturing a lens- equipped solid-state imaging device according to any one of first to eighth configurations, comprising: a mold release step of removing the translucent mold.

(Tenth configuration)
A wiring board on which conductor wiring is formed, an image processing apparatus bonded to the wiring board and electrically connected to the conductor wiring, a solid-state imaging device with a lens electrically connected to the conductor wiring, and the lens An image pickup apparatus comprising: an optical path demarcating device disposed opposite to the solid-state image pickup device with a lens and demarcating an optical path to the solid-state image pickup device with a lens .

  According to the present invention, it is possible to provide a solid-state imaging device that achieves downsizing and thinning using a simple and inexpensive method and that has high reliability (environment resistance) and performance. The present invention can be applied to all optical devices for forming an image based on the light of the above. In particular, it is effective to apply to a camera module for a mobile phone, a digital camera, and the like. It can be used for the purpose of downsizing, thinning and widening the device.

(A) is a top view which shows the structure of the solid-state imaging device concerning one Embodiment of this invention, (b) is sectional drawing in AA 'of (a), (c) is ( It is sectional drawing in BB 'of a). It is sectional drawing in C-C 'of Fig.1 (a) which shows 1 process for forming the solid-state imaging device of FIG. (A) is sectional drawing which shows a mode that light injects into the edge part of the lens of the solid-state imaging device of FIG. 1, (b) is sectional drawing to which the edge part vicinity of the lens of (a) was expanded. . (A) is sectional drawing which shows the structure of the solid-state imaging device which is a modification of FIG. 1, (b) is sectional drawing which shows the structure of the solid-state imaging device which is another modification of FIG. It is sectional drawing explaining each process in the manufacturing method of the solid-state imaging device of FIG. (A) is sectional drawing which shows the type | mold used for the modification of the manufacturing method of FIG. 5, (b) is sectional drawing which shows the type | mold used for the other modification of the manufacturing method of FIG. It is sectional drawing which shows the structure of the imaging device provided with the solid-state imaging device of FIG. (A) is sectional drawing which shows the structure of the solid-state imaging device which concerns on other embodiment of this invention, (b) shows a mode that light injects into the edge part of the lens of the solid-state imaging device of (a). It is sectional drawing shown, (c) is sectional drawing which expanded the edge part vicinity of the lens of (b). It is sectional drawing which shows 1 process for forming the solid-state imaging device of FIG. It is sectional drawing explaining each process in the manufacturing method of the solid-state imaging device of FIG. It is sectional drawing which shows the structure of the imaging device provided with the solid-state imaging device of FIG. It is sectional drawing explaining the optical path of the light which injects into a solid-state image sensor. It is sectional drawing which shows the structure of the conventional solid-state imaging device. It is sectional drawing which shows the structure of the other conventional solid-state imaging device. It is sectional drawing or a top view explaining each process in the manufacturing method of the conventional solid-state imaging device. It is sectional drawing which shows the structure of the conventional imaging device. It is sectional drawing which shows the structure which applied the lens to the solid-state imaging device of FIG. 16 using the method of FIG. It is a graph which shows the temperature change in a lead-free solder reflow mounting process.

Explanation of symbols

1 Sensor chip (solid-state image sensor)
1a Effective pixel area 3 Glass plate (transparent plate)
5 spacer 7 sealing resin 9 lens <br/> 9 'photocurable resin (energy curable resin)
10 Solid-state imaging device 19 Transparent mold (mold)
19 'Transparent mold (mold)
31 solid-state imaging device 32 lens <br/> 32 'photocurable resin (energy curable resin)
32a overhang 33 solid-state imaging device 34 lens <br/> 34 'photocurable resin (energy curable resin)
34a Overhang 51 Transparent mold (mold)
52 Transparent mold (mold)
61 imaging device 61a imaging device 81 the solid-state imaging device 91 lens <br/> 91 'photocurable resin (energy curable resin)

Claims (16)

at least,
A solid-state imaging device in which an effective pixel region is formed;
A transparent plate disposed so as to face the effective pixel region and having a planar dimension equivalent to the effective pixel region;
A sealing resin for sealing a part of the solid-state imaging device and the side wall of the transparent plate;
A lens formed on the transparent plate and made of a transparent resin;
With
The solid-state imaging device, wherein at least a portion of the lens is in contact with the sealing resin. at least,
A solid-state imaging device in which an effective pixel region is formed;
A transparent plate disposed so as to face the effective pixel region and having a planar dimension equivalent to the effective pixel region;
A lens formed on the transparent plate and made of a transparent resin;
With
At least a part of the lens is in contact with a side wall of the transparent plate. Part of the lens, through the adhesion enhancing section for improving the physical adhesion or chemical bonding force between the lens and the sealing resin, the adhesion part of the sealing resin top The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.   The solid-state imaging device according to claim 3, wherein the adhesion improving portion is a roughened surface of the sealing resin.   The solid-state imaging device according to claim 3, wherein the adhesion improving portion is a functional group imparted to the surface of the sealing resin. The solid-state imaging device according to claim 1, wherein a silane coupling agent is further provided between the transparent plate and the lens . 7. The solid-state imaging device according to claim 1, wherein the lens has a visible light transmittance of 80% or more under a temperature condition of −60 ° C. to 270 ° C. 7. The solid-state imaging device according to claim 1, wherein a part of the transparent plate is exposed from the lens . The solid-state imaging device according to claim 1, wherein a refractive index of the lens with respect to visible light is 1.3 to 1.4. 10. The overhang having a flat upper surface, which is formed on the lens to the outer edge of the sealing resin toward the outside of the effective pixel region. The solid-state imaging device according to any one of the above.   An imaging device comprising the solid-state imaging device according to claim 1. at least,
Disposing a transparent plate having a planar dimension equivalent to the effective pixel area so as to face the effective pixel area of the solid-state imaging device;
A step of resin-sealing at least a part of the solid-state imaging device and a side wall of the transparent plate;
Forming a lens made of a transparent resin on the transparent plate and a part of the sealing resin. A method for producing a solid-state imaging device. at least,
Fixing a transparent plate having a planar dimension equivalent to the effective pixel region to the effective pixel region of the solid-state image sensor to the solid-state image sensor;
Forming a lens made of a transparent resin over an upper portion of the transparent plate and a part of a side wall of the transparent plate. The above process of forming the lens
The solid-state imaging device according to claim 12, comprising: a process of filling a mold with fluid curable resin having fluidity; and a process of curing the energy curable resin by applying light energy or thermal energy. Manufacturing method. 15. The process of using a transparent mold as the mold and curing the energy curable resin is performed while confirming a position where the lens is to be formed through the transparent mold. Manufacturing method of solid-state imaging device. 16. The solid-state imaging device according to claim 14 or 15, wherein, in the process of filling the mold with an energy curable resin, the mold is filled with an energy curable resin that exceeds a necessary amount for forming the lens . Production method.

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